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by MJD200/D
SEMICONDUCTOR TECHNICAL DATA

 



  

NPN/PNP Silicon DPAK For Surface Mount
Applications
. . . designed for low voltage, lowpower, highgain audio amplifier applications. SILICON
CollectorEmitter Sustaining Voltage POWER TRANSISTORS
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc 5 AMPERES
High DC Current Gain hFE = 70 (Min) @ IC = 500 mAdc 25 VOLTS
= 45 (Min) @ IC = 2 Adc 12.5 WATTS
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (1 Suffix)
Lead Formed Version in 16 mm Tape and Reel (T4 Suffix)
Low CollectorEmitter Saturation Voltage
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc

High CurrentGain Bandwidth Product fT = 65 MHz (Min) @ IC = 100 mAdc

Annular Construction for Low Leakage ICBO = 100 nAdc @ Rated VCB CASE 369A13

MAXIMUM RATINGS

Rating Symbol Value Unit

CollectorBase Voltage VCB 40 Vdc

CollectorEmitter Voltage VCEO 25 Vdc

EmitterBase Voltage VEB 8 Vdc

CASE 36907
Collector Current Continuous IC 5 Adc

Peak 10

Base Current IB 1 Adc

Total Device Dissipation @ TC = 25_C PD 12.5 Watts MINIMUM PAD SIZES

Derate above 25_C 0.1 W/_C

RECOMMENDED FOR
Total Device Dissipation @ TA = 25_C* PD 1.4 Watts SURFACE MOUNTED

Derate above 25_C

0.011 W/_C APPLICATIONS

_C
0.190
4.826
Operating and Storage Junction TJ, Tstg 65 to + 150

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

0.165
4.191
_C/W

Thermal Resistance, Junction to Case RJC 10

Thermal Resistance, Junction to Ambient* RJA 89.3

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

0.07
1.8

Characteristic Symbol Min Max Unit

0.118

OFF CHARACTERISTICS

3.0

CollectorEmitter Sustaining Voltage (1) VCEO(sus) 25 Vdc

(IC = 10 mAdc, IB = 0)
0.063

1.6

Collector Cutoff Current ICBO nAdc

(VCB = 40 Vdc, IE = 0) 100

0.243
6.172

inches
(VCB = 40 Vdc, IE = 0, TJ = 125_C) 100 mm

Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) IEBO

* When surface mounted on minimum pad sizes recommended.
100 nAdc
(continued)
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle[2%.
REV 1

Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data


 

ELECTRICAL CHARACTERISTICS continued (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain (1) hFE

(IC = 500 mAdc, VCE = 1 Vdc) 70

(IC = 2 Adc, VCE = 1 Vdc) 45 180

(IC = 5 Adc, VCE = 2 Vdc) 10

CollectorEmitter Saturation Voltage (1) VCE(sat) Vdc

(IC = 500 mAdc, IB = 50 mAdc)

0.3
(IC = 2 Adc, IB = 200 mAdc) 0.75

(IC = 5 Adc, IB = 1 Adc) 1.8

BaseEmitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc) VBE(sat) 2.5 Vdc

BaseEmitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc) VBE(on) 1.6 Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (2) fT 65 MHz

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

Output Capacitance MJD200 Cob 80 pF

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD210 120
[
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
(2) fT = hfe ftest.

TA TC
2.5 25 VCC
+ 30 V
PD, POWER DISSIPATION (WATTS)

2 20 25 s
+11 V RC
0 SCOPE
1.5 15 RB
9 V
1 10 TA (SURFACE MOUNT) 51 D1
tr, tf 10 ns
DUTY CYCLE = 1%
TC
4 V
0.5 5
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
0 0 1N5825 USED ABOVE IB 100 mA FOR PNP TEST CIRCUIT,
25 50 75 100 125 150
MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES
T, TEMPERATURE (C)

Figure 1. Power Derating Figure 2. Switching Time Test Circuit

1K 10K
500 td 5K VCC = 30 V
300 3K ts IC/IB = 10
200 2K IB1 = IB2
TJ = 25C
100 1K
t, TIME (ns)
t, TIME (ns)

50 500
30 tr VCC = 30 V 300
20 200
IC/IB = 10
10 TJ = 25C 100
5 50
3 MJD200 30 MJD200 tf
2 20
MJD210 MJD210
1 10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 3. TurnOn Time Figure 4. TurnOff Time

2 Motorola Bipolar Power Transistor Device Data

  
NPN PNP
MJD200 MJD210

400 400
TJ = 150C

25C TJ = 150C
200 200
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

25C
55C
100 100
80 80 55C
60 60

40 VCE = 1 V 40 VCE = 1 V
VCE = 2 V VCE = 2 V

20 20
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 5. DC Current Gain

2 2

TJ = 25C TJ = 25C
1.6 1.6
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.2 1.2

VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10

0.8

VBE @ VCE = 1 V VBE @ VCE = 1 V

0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 6. On Voltage

+ 2.5 + 2.5
V, TEMPERATURE COEFFICIENTS (mV/C)

V, TEMPERATURE COEFFICIENTS (mV/C)

+2 *APPLIES FOR IC/IB hFE/3 +2 *APPLIES FOR IC/IB hFE/3

+ 1.5 + 1.5 25C to 150C
+1 +1
+ 0.5 VC for VCE(sat) 25C to 150C + 0.5
*VC for VCE(sat)
0 0 55C to 25C
0.5 55C to 25C 0.5
25C to 150C
1 25C to 150C 1
1.5 1.5 VB for VBE 55C to 25C
VB for VBE
2 55C to 25C 2
2.5 2.5
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 7. Temperature Coefficients

Motorola Bipolar Power Transistor Device Data 3

 
1
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.3 0.2
0.2 0.1 P(pk)
RJC(t) = r(t) JC
0.05 RJC = 10C/W MAX
0.1 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN t1
0.05 0.02 READ TIME AT t1 t2
0.01 TJ(pk) TC = P(pk) JC(t)
0.03 DUTY CYCLE, D = t1/t2
0 (SINGLE PULSE)
0.02

0.01
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200
t, TIME (ms)

Figure 8. Thermal Response

10 There are two limitations on the power handling ability of a

5 ms
5 transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

3 down. Safe operating area curves indicate IC VCE limits of

2
TJ = 150C 100 s
1 ms the transistor that must be observed for reliable operation;
1 500 s i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
dc The data of Figure 9 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
BONDING WIRE LIMITED
limits are valid for duty cycles to 10% provided T J(pk)
0.1 THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE) v 150_C. T J(pk) may be calculated from the data in Fig-
SECOND BREAKDOWN LIMITED ure 8. At high case temperatures, thermal limitations will re-
CURVES APPLY BELOW duce the power that can be handled to values less than the
RATED VCEO limitations imposed by second breakdown.
0.01 Case 36905 may be ordered by adding a 1 suffix to the
0.3 1 2 3 5 7 10 20 30
device title (i.e. MJD2001)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 9. Active Region Safe Operating Area

200

TJ = 25C

Cib
C, CAPACITANCE (pF)

100

70

50
Cob

MJD200 (NPN)
30
MJD210 (PNP)

20
0.4 0.6 1 2 4 6 10 20 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Capacitance

4 Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

NOTES:
T SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
PLANE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.033 0.040 0.84 1.01
S F 0.037 0.047 0.94 1.19
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
F J R 0.175 0.215 4.45 5.46
L S 0.020 0.050 0.51 1.27
H U 0.020 0.51
V 0.030 0.050 0.77 1.27
D 2 PL Z 0.138 3.51
G 0.13 (0.005) M T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 369A13
ISSUE W

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
V R E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
A B 0.250 0.265 6.35 6.73
1 2 3 C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
S E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
T G 0.090 BSC 2.29 BSC
SEATING K H 0.034 0.040 0.87 1.01
PLANE
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
J S 0.050 0.090 1.27 2.28
F V 0.030 0.050 0.77 1.27
H
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 36907
ISSUE K

Motorola Bipolar Power Transistor Device Data 5

 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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6 Motorola Bipolar Power Transistor Device Data

*MJD200/D*
MJD200/D