Single-Stage Integrated-
Circuit Amplifiers
1
Outline
VLSI Fabrication Technology
Comparison of the MOSFET and the BJT
IC Biasing Current Sources, Current Mirrors, and Current-Steering
Circuits
High-Frequency Response General Considerations
The Common-Source and Common-Emitter Amplifiers with Active
Loads
High-Frequency Response of the CS and CE Amplifiers
The Common-Gate and Common-Base Amplifiers with Active Loads
The Cascode Amplifier
The CS and CE Amplifiers with Source (Emitter) Degeneration
The Source and Emitter Followers
Some Useful Transistor Pairings
Current-Mirror Circuits with Improved Performance
2
A CMOS inverter
Schematic Layout
3
A CMOS inverter
Cross section
4
A CMOS inverter
Photomasks
(a) Define n-well diffusion (mask #1) (b) Define active regions (mask #2)
Dark-field mask Clear-field mask
Drawn geometries Drawn geometries
are kept as patterns are opened as
negativeimages windows
positiveimages
5
A CMOS inverter
Photomasks
(e) n+ diffusion (mask #4) (f) p+ diffusion (mask #5)
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A CMOS inverter
Photomasks
(g) Contact holes (mask #6)
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Discrete vs. Integrated
Components
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The pictures are copied from [Link] , [Link]
Discrete vs. Integrated
Products
9
The pictures are copied from [Link] , [Link]
Outline
VLSI Fabrication Technology
Comparison of the MOSFET and the BJT
IC Biasing Current Sources, Current Mirrors, and Current-Steering
Circuits
High-Frequency Response General Considerations
The Common-Source and Common-Emitter Amplifiers with Active
Loads
High-Frequency Response of the CS and CE Amplifiers
The Common-Gate and Common-Base Amplifiers with Active Loads
The Cascode Amplifier
The CS and CE Amplifiers with Source (Emitter) Degeneration
The Source and Emitter Followers
Some Useful Transistor Pairings
Current-Mirror Circuits with Improved Performance
10
Typical Values of MOSFET Parameters
0.8m 0.5m 0.25m 0.18m
Parameter NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS
tox (nm) 15 15 9 9 6 6 4 4
Cox (fF/m2) 2.3 2.3 3.8 3.8 5.8 5.8 8.6 8.6
(cm2/Vs) 550 250 500 180 460 160 450 100
Cox (A/V2) 127 58 190 68 267 93 387 86
Vt0 (V) 0.7 -0.7 0.7 -0.8 0.43 -0.62 0.48 -0.45
VDD (V) 5 5 3.3 3.3 2.5 2.5 1.8 1.8
|VA
|(V/m) 25 20 20 10 5 6 5 6
Cov (fF/m) 0.2 0.2 0.4 0.4 0.3 0.3 0.37 0.33
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c.f.: Microelectronic Circuits, 5th ed., Sedra/Smith
Typical Values of IC BJT Paramemters
Standard High-Voltage Process Advanced Low-Voltage Process
Parameter npn Lateral pnp npn Lateral pnp
AE (m2) 500 900 2 2
IS (A) 5 10-15 2 10-15 6 10-18 6 10-18
0 (A/A) 200 50 100 50
VA (V) 130 50 35 30
VCE0 (V) 50 60 8 18
F 0.35ns 30ns 10ps 650ps
Cje0 1pF 0.3pF 5fF 14fF
C0 0.3pF 1pF 5fF 15fF
rx () 200 300 400 200
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c.f.: Gray et al. (2000)
I-V Characteristics (iD vGS v.s. iC vBE)
NMOS npn
Transconductor
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Channel-length modulation v.s. Early effect
NMOS npn
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Low-Frequency Operation
NMOS npn
model
T model
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Low-Frequency Operation
NMOS npn
model
Transconductance gm
I I
gm D gm C
VOV 2 VT
W
g m
n Cox
VOV
L
g m 2
n Cox
W
ID
L 16
Low-Frequency Operation
NMOS npn
model
Input resistance
r
gm
Output resistance ro
VA VA' L VA
ro ro
ID ID IC 17
Low-Frequency Operation
NMOS npn
Intrinsic Gain A0 gmro VA
V
A0
A0 A VT
VOV 2
2VA' L
A0
VOV
VA' 2nCoxWL
A0
ID
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High-Frequency Operation
NMOS npn
Capacitances
C Cde C je
2
C gs WLCox WLov Cox Cde F g m
3
C je 2C je 0
C gd WLovCox
m
VCB
C C0 1
VC 0 19
High-Frequency Operation
NMOS npn
Unity-gain Frequency (Transition Frequency) fT
gm gm
fT
2( C gs C gd )
fT
2( CC )
2
for C gs C gd and C gs WLC ox for C C and C C de
3
1.5 nVOV 2 nVT
fT fT
2L2 2WB 2 20
High-Frequency Operation
Frequency response of a CS amplifier loaded with CL
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High-Frequency Operation
Increasing ID or W/L increases the bandwidth
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