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Solid State Multiple Choice Questions

This document provides information about a solid state exam including: - The exam will take place over 1.5 hours and cover the topic of solid state. - It has 4 sections - multiple choice, multiple response, paragraph and integer answer types. - Section 1 has 10 multiple choice questions worth +3/-1 marks each. - Section 2 has 7 multiple response questions worth +3 marks each. - Section 3 has 2 paragraph questions worth +3/-1 marks each. - Section 4 has 2 integer answer questions worth +4 marks each. - The exam is out of a total of 65 marks.
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100% found this document useful (1 vote)
59 views10 pages

Solid State Multiple Choice Questions

This document provides information about a solid state exam including: - The exam will take place over 1.5 hours and cover the topic of solid state. - It has 4 sections - multiple choice, multiple response, paragraph and integer answer types. - Section 1 has 10 multiple choice questions worth +3/-1 marks each. - Section 2 has 7 multiple response questions worth +3 marks each. - Section 3 has 2 paragraph questions worth +3/-1 marks each. - Section 4 has 2 integer answer questions worth +4 marks each. - The exam is out of a total of 65 marks.
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ANDHERI / BORIVALI / DADAR / CHEMBUR / THANE / MULUND/ NERUL / POWAI

TIME: 1 HRS

TW TEST
TOPIC: SOLID STATE

MARKS: 65

SECTION-I (Single Choice Questions)


This section contains 10multiple choice questions. Each question has 4 choices (A),(B),(C)
and (D) for its answer, out which ONLY ONE is correct.
(+3, - 1)

1.

In a hypothetical solid, C atoms are found to form cubical close-packed lattice. A atoms occupy all
tetrahedral voids and B atoms occupy all octahedral voids.

A and B atoms are of appropriate size, so that there is no distortion in the ccp lattice of C atoms.
Now if a plane as shown in the following figure is cut, then the cross section of this plane will
look like

2.

In an fcc unit cell, atoms are


numbered as shown below.
The atoms not touching each other
are (Atom numbered 3 is face center
of front face)
a. 3 and 4
b. 1 and 3
c. 1 and 2
d. 2 and 4

3.

The lattice parameter of GaAs ( radius if Ga = 1.22 A , As = 1.25 A ) is

a. 5.635 A

b. 2.852 A

c. 5.774 A

d. 4.94 A

4.

In the cubic lattice given below, the three distances between the atoms A-B, A-C,
And A-G are, respectively,
a. a, 2a, 3a
b. a, 3a, 2a
a a
3a
,
c. ,
2 2 2

3a
, 2a
2
In body-centered cubic lattice given below, the three distances AB, AC ,and AA` are
d. a,

5.

a. a, 2a,
b. a,
c.

3a
2

3a
, 2a
2

3a
, 2a, a
2

d. a,

a
3a
,
2 2
0

6.

density of AB2 is 5.2 g cm 3 , the number of molecules present in one unit


7.

8.

9.

10.

A molecule A2 B (Mw = 166.4) occupies triclinic lattice with a = 5 A , b = 8 A , and c = 4 A . If the


cell is

a. 2
b. 3
c. 4
d. 5
Potassium crystallizes with a
a. Face-centered cubic lattice
b. Body-centered cubic lattice
c. Simple cubic lattice
d. Orthorhombic lattice
When molten zinc is cooled to solid state, it assumes hcp structure. Then the number of
neighbours of zinc atom will be
a. 4
b. 6
c. 8
d. 12
In the structure of diamond, carbon atoms appears at
1 1 1
1 1 1
1 1 1
a. 0, 0, 0, and , ,
b. , , , and , ,
2 2 2
4 4 4
2 2 2
1 1 1
3 3 3
c. 0, 0, 0, and , ,
d. 0, 0, 0, and , ,
4 4 4
4 4 4
which of the following figures represents the cross section of an OV?

nearest

SECTION-II (Multiple Choice Questions)


This section contains 7 multiple choice questions. Each question has 4 choices (A), (B), (C)
and (D) for its answer, out which ONE OR MORE is/are correct.
(+3, 0)
11.

12.

An hcp and ccp structure for a given element would be expected to have
a. The same co-ordination number b. The same density
c. The same packing fraction
d. All of these
Following three planes P1 , P2 , P3 in an fcc unit cell are shown in the figure below. Consider the
following statements and choose the correct option/options that follow:

a. P1 contains no three dimensional voids.


b. P2 contains only octahedral voids.
c. P3 contains both octahedral and tetrahedral voids.
13.

14.

15.

16.

d. All of these
Given is the arrangement of atoms in a crystallographic
plane.
Which plane correctly represents (s)
the adjacent drawn structure?
a. Face plane in fcc
b. Body diagonal plane in fcc
c. Face plane in bcc
d. Body diagonal plane in bcc

The density of KBr is 2.75 g cm 3 . The length of the unit cell is 654 pm. Atomic mass of K = 39,
Br = 80. Then what is true about the predicted nature of the solid?
a. The unit cell is fcc
b. Z = 4
c. There are four constituents/unit cells
d. There are 8 ions at corners and 6 at the centers of the faces
What is true about a bcc unit cell?
a. The number of atoms in the unit cell is 2.
b. In addition to an atom at the center of the body, in a unit cell there are 8 atoms at 8
different corners
c. One-eighth of an atom at a corner of the unit cell.
d. None of the above.
If a mixture of LiCl and NaCl is melted and then cooled,
a. A solid solution is formed.
b. Mixture formed is called eutectic mixture.

c. TiO1.8 is non-stoichiometric solid solution of Ti 2O3 and TiO 2 .


d. NeitherLiCl nor NaClseperates
17.

Select the correct statements (s).


a. The non-stoichiometric from of NaCl is yellow and that of KCl is blue-lilac.
b. Solids containing F-centers (Farbe) are paramagnetic.
c. Non-stoichiometric compounds are called Berthollide compounds.
d. Conduction by electrons is called n-type semiconductors.

SECTION-III

(Paragraph Type)

This section contains 2 groups of questions. Each question has 4 choices (A), (B), (C) and (D)
for its answer, out of which ONLY ONE is correct.
(+3, -1)
AX, AY, BX, and BY have rock salt type structure with following internuclear distances:
Salt

Anion-anion

Cation-anion

AX
AY
BX
BY

18.

Distance in A

2.40
1.63
2.66
2.09

1.70
1.15
1.88
1.48

The structure given bellow is of

a. AX
19.

Distance in A

b. AY, BX

c. AY, BX, BY

d. AY, BX, BY, and KCI

Which of the following structure is, respectively, by AX ?

SECTION-IV

(Integer Answer Type)

This section contains 2 questions. The answer to each of the questions is a single digit integer,
ranging from 0 to 9. The correct digit below the question number in the ORS is be bubbled.
(+4, 0)
20.

If a solid A B having ZnS structure is heated so that the ions along two of the axis passing
through the face center particles are lost and bivalent ion (Z) enters here to maintain the electrical
neutrality, so that the new formula unit becomes A x By Cc , Report the value of x + y + c.

21.

A bcc lattice is made up of hollow spheres of B. Spheres of solids A are present in hollow
spheres of B. The radius of A is half of the radius of B. The ratio of total volume of spheres of B
unoccupied by A in a unit cell and volume of unit cell is A

3
. Find
64

the value of A.

ANDHERI / BORIVALI / DADAR / CHEMBUR / THANE / MULUND/ NERUL / POWAI

TOPIC Solid State

MARKS :65
ANSWER KEY

1.c

2.c

3.b

4.a

5.a

6.b

7.b

8.d

9.a

10.a

11.a, c

12.a,b,c,d

13.a,d

14.a,b,c,d

15.a,b,c

16.a,b,c,d

17.a,b,c,d

18.d

19.a

20. 7

21.7

Solid State Solution


1.

2.

3.

c.
From figure, it is clear 4 corners and 2 face centers lie on the shaded plane. Therefore, there
be six C atoms, and atoms (marked A) in TVs do not touch other.
Fig. (a) is not possible; four atom marked C.
Fig (b) is not possible; atoms A in TVs are not shown in figure.
Fig.(c) is possible, since atoms A in TVs are not touching each other.
Fig.(d) is not possible, since atoms A in TVs are touching each other.

c.
In fcc structure, corner atoms do not touch each other (atoms 1 and 2), but every facecenteratom
touches corners. Moreover, every face center atom touches every other
facecenter atom. Inan fcc
unit cell.
a
i. Atoms 3 and 4 are touching each other where center-to-center distance =
2
ii. Atoms 1 and 2 are not touching each other.
a
iii. Atoms 2 and 4 are touching each other where center-to-center distance =
2
b.
0

r
r
i.e., Ga
r
rAs3

1.22 A
0.976

0
1.25 A

From radius ratio, it is clear that cation Ga 3 ion lies in body centered or cubic void,
where

2 r r

3
0

2 1.22 1.25 A 3a a 2.852


4.

5.

will

a
i.

Edge length = AB = AD = BC = CD = a

ii.

AC

AB BC

iii.

AG

AC CG

a.
i.

Edge length = AB = AD = BC = CD = a

ii.

AC 2a

iii.

AG body diagonal 3 a

a 2 a 2 2a

2a 2 a 2 3a

Therefore AA`= AG / 2

3
a
2

6.

b.
Volume of unit cell = a b c 5 10 8 8 10 8 4 10 8
Mass of unit cell

= 1.6 1022 5.2 8.32 10 22 g

Number of molecules in one unit cell =

8.32 1022 g
166.4g mol 1
=3

7.

a.
1

number of A atoms 8 1
8
Formula AB3 .
1
Number of B atoms 6 3

8.

d.

9.

a.
The space lattice of diamond is fcc. The primitive basis
1 1 1
has two identical atoms at
0, 0, 0 and , ,
4 4 4
associated with each point of the fcc lattice as shown in the figure.

10.

a.

11.

(a, c)
The hcp and ccp structures have same CN (12), same packing fraction (0.74), but different
density as the number of atoms as well as the volume of unit cell differ in both.

12.
`

(a, b, c, d)
a.
P1 represents one of the close-packed layer having triangular voids only.
b.

P2 contains location of OVs (edge centers of unit cell).

c.

P3 contains 3 OVs locations (one at body center and two at edge center). Also,
plane P3 contains the body diagonals, hence it contains TVs location (TVs lie at
body diagonal).

13.

(a, d)

Body-centered cubic
Centeral atom touches other
four atoms in the shaded plane

Face-centered cubic
Central atom touches other
four atoms in the shaded plane

Hence, answer is (a) and (d).

14.

(a, b, c, d)

Zeff

a 3 1030 N A
Mw
3

2.75 654 10 30 6 10 23
4
119

15.

(a, b, c)

16.

(a, b, c, d)

17.

20.

(7)
For ZnS structure, Zeff of ZnS 4

(a, b, c, d)

Number of B = 4/unit cell (corner + face center)


Number of A = 4/ unit cell (in alternate TVs)
Number of B ion removed
= 4 (Two from each face center)
1
(per face center share) = 2
2
Number of Br ions left = 4 - 2 = 2/unit cell
Number of Z 2 ions entering in place of B = 1.
[To maintain electrical neutrality, 2B 1Z 2 ]
Formula = A 4 B2 Z1

21.

x y c 4 2 1 7

(7)
Let radius of hollow sphere B = r

Edge length a 4r / 3

Volume of unit cell = a 3 4r / 3

Volume of B unoccupied by A (having radius = r/2)


4 3 4 r 3
In unit cell = 2 r
3 2
3

18.

19.

4
7r 3

2
Volume of B unoccupied by A in unit cell 3
8

3
Volume of unit cell
4r

7 3 7 3

64
64
A7
A

7 3
64

Common questions

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An element with variable oxidation states can greatly impact the band structure of a crystalline solid by altering electronic configurations and creating new energy levels within the band gap. This can shift band positions, modify the effective mass of charge carriers, or introduce mid-gap states, affecting conductivity, band width, and overall semiconducting properties. Variation in oxidation states allows for tunable electronic properties, important in synthesizing materials for specific electronic applications such as sensors, photovoltaics, and transistors .

Eutectic mixtures form when two or more components, which are normally soluble in each other in the liquid state but insoluble in the solid state, are cooled to solidify simultaneously at a specific composition and temperature, known as the eutectic point. These mixtures solidify into intimately mixed microstructures resulting in materials that combine properties of both compounds, often leading to reduced melting points and enhanced mechanical properties. This is particularly significant in metallurgy and materials engineering, where eutectics are used to create soldering materials and cast metals and alloys with optimized melting points and structural integrity .

Voids in fcc unit cells, such as tetrahedral and octahedral voids, significantly impact the lattice's physical properties by allowing the accommodation of different atomic sizes and ionic species. These voids contribute to the overall stability of the structure and are crucial in the formation of various complex crystal frameworks and alloys. Having tetrahedral and octahedral voids can affect the packing efficiency and thus influence mechanical properties and melting points .

Non-stoichiometric compounds, such as Berthollide compounds, have an element's ratio that deviates from simple integers. This non-stoichiometry affects the material's physical properties, including electrical conductivity, magnetism, and reactivity. It requires careful characterization as the traditional stoichiometric rules for predicting properties do not apply, often resulting in unique behaviors and applications, particularly in electronic and magnetic materials .

Heating a ZnS structure solid causing the loss of ions along specific axes can result in structural transformations. The original structure is modified by removing some ions and replacing them with others to maintain electrical neutrality. For instance, removing B ions from the face-centered positions and introducing bivalent ions (Z) results in a formula change to accommodate the new ion's charge and maintain neutrality. The potential new formula unit, as modified, would be expressed as A_xB_yZ, with specific x, y, and z values depending on the ions' specific charges and positions .

The coordination number for both fcc and hcp structures is 12, indicating that the number of nearest neighbors surrounding any atom is the same in both structures. However, their densities differ because they have different unit cell configurations and volumes. The hcp structure has a hexagonal shape while the fcc has a cubic one, affecting the number of atoms per unit cell and, subsequently, the density .

F-centers, or color centers, occur when an anion is missing from the lattice and an electron occupies its site, creating a defect. These electrons can absorb specific wavelengths of light, which causes coloration in the crystal (e.g., NaCl becoming yellow). Additionally, F-centers contribute to the semiconducting properties of the material by providing conduits for electron mobility, leading to enhanced conductivity. This phenomenon is significant in determining the optical and electrical properties of materials .

Understanding both the macroscopic and microscopic structures of materials is crucial because their overall performance and suitability for specific technological applications are deeply rooted in these structural characteristics. Properties such as strength, conductivity, optical characteristics, and magnetic behavior are determined at the atomic and lattice levels. This dual understanding enables the design of materials with tailored properties for specialized uses, such as semiconductors, superconductors, and durable materials in aerospace applications .

Stoichiometric imbalances in ionic crystals, often resulting from defects like vacancies or interstitial ions, can disrupt electrical neutrality unless compensatory changes occur within the lattice. For instance, missing anions can be offset by extra electrons, which maintain neutrality but modify the crystal's electronic structure, often introducing color centers and affecting conductivity. These defects can lead to increased property diversity, such as paramagnetism in solids with F-centers. Correcting these imbalances involves maintaining overall charge balance and can lead to altered structural properties .

In a bcc lattice with hollow spheres of B, placing smaller A spheres within these hollows affects the lattice's total volume occupied by atoms and thus changes the density. Since A spheres take up space that would otherwise be part of the voids, they increase the occupied volume within the unit cell, potentially raising the density, provided that A and B have compatible atomic or ionic sizes. The overall density result will depend on the radii and packing fraction of both A and B within the unit cell .

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