100% found this document useful (1 vote)
173 views9 pages

CMOS Interview Questions and Answers

1. The document discusses 26 interview questions related to CMOS technology. It covers topics like latchup, noise margin, sizing of transistors, delay, power consumption, charge sharing, metastability, and layout techniques. 2. For each question, it provides a concise answer explaining the concept or technique. For example, it explains that NAND gates are preferred over NOR gates for fabrication because electron mobility is higher, resulting in faster operation. 3. Design techniques discussed for optimizing layout include maintaining a uniform cell height, using different metal layers for horizontal and vertical routing, including substrate contacts, and avoiding long poly connections.

Uploaded by

arun
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
100% found this document useful (1 vote)
173 views9 pages

CMOS Interview Questions and Answers

1. The document discusses 26 interview questions related to CMOS technology. It covers topics like latchup, noise margin, sizing of transistors, delay, power consumption, charge sharing, metastability, and layout techniques. 2. For each question, it provides a concise answer explaining the concept or technique. For example, it explains that NAND gates are preferred over NOR gates for fabrication because electron mobility is higher, resulting in faster operation. 3. Design techniques discussed for optimizing layout include maintaining a uniform cell height, using different metal layers for horizontal and vertical routing, including substrate contacts, and avoiding long poly connections.

Uploaded by

arun
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

[Link].

in

CMOSinterviewquestions
6minread original

CMOSinterviewquestions.
1)Whatislatchup?
Latchuppertainstoafailuremechanismwhereinaparasitic
thyristor(suchasaparasiticsiliconcontrolledrectier,orSCR)
isinadvertentlycreatedwithinacircuit,causingahighamount
ofcurrenttocontinuouslyowthroughitonceitisaccidentally
[Link],the
amountofcurrentowproducedbythismechanismcanbe
largeenoughtoresultinpermanentdestructionofthedevice
duetoelectricaloverstress(EOS).
2)WhyisNANDgatepreferredoverNORgatefor
fabrication?
NANDisabeergatefordesignthanNORbecauseatthe
transistorlevelthemobilityofelectronsisnormallythreetimes
thatofholescomparedtoNORandthustheNANDisafaster
gate.
Additionally,thegateleakageinNANDstructuresismuch

lower.Ifyouconsidert_phlandt_plhdelaysyouwillndthat
itismoresymmetricincaseofNAND(thedelayprole),but
forNOR,onedelayismuchhigherthantheother(obviously
t_plhishighersincethehigherresistancepmossareinseries
connectionwhichagainincreasestheresistance).
3)WhatisNoiseMargin?Explaintheproceduretodetermine
NoiseMargin
Theminimumamountofnoisethatcanbeallowedontheinput
stageforwhichtheoutputwillnotbeeected.
4)Explainsizingoftheinverter?
Inordertodrivethedesiredloadcapacitancewehaveto
increasethesize(width)oftheinverterstogetanoptimized
performance.
5)HowdoyousizeNMOSandPMOStransistorstoincrease
thethresholdvoltage?
6)WhatisNoiseMargin?Explaintheproceduretodetermine
NoiseMargin?
Theminimumamountofnoisethatcanbeallowedontheinput
stageforwhichtheoutputwillnotbeeected.
7)Whathappenstodelayifyouincreaseloadcapacitance?

delayincreases.
8)Whathappenstodelayifweincludearesistanceatthe
outputofaCMOScircuit?
Increases.(RCdelay)
9)Whatarethelimitationsinincreasingthepowersupplyto
reducedelay?
Thedelaycanbereducedbyincreasingthepowersupplybutif
wedosotheheatingeectcomesbecauseofexcessivepower,
tocompensatethiswehavetoincreasethediesizewhichisnot
practical.
10)HowdoesResistanceofthemetallinesvarywith
increasingthicknessandincreasinglength?
R=(*l)/A.
11)ForCMOSlogic,givethevarioustechniquesyouknowto
minimizepowerconsumption?
Powerdissipation=CV2f,fromthisminimizetheload
capacitance,dcvoltageandtheoperatingfrequency.
12)WhatisChargeSharing?ExplaintheChargeSharing
problemwhilesamplingdatafromaBus?

IntheseriallyconnectedNMOSlogictheinputcapacitanceof
eachgatesharesthechargewiththeloadcapacitancebywhich
thelogicallevelsdrasticallymismatchedthanthatofthe
[Link]
highcomparedtotheinputcapacitanceofthegates
(approximately10times).
13)Whydowegraduallyincreasethesizeofinvertersin
buerdesign?Whynotgivetheoutputofacircuittoone
largeinverter?
Becauseitcannotdrivetheoutputloadstraightaway,sowe
graduallyincreasethesizetogetanoptimizedperformance.
14)WhatisLatchUp?ExplainLatchUpwithcrosssectionofa
[Link]?
Latchupisaconditioninwhichtheparasiticcomponentsgive
risetotheEstablishmentoflowresistanceconductingpath
betweenVDDandVSSwithDisastrousresults.
15)GivetheexpressionforCMOSswitchingpower
dissipation?
CV2
16)WhatisBodyEect?

IngeneralmultipleMOSdevicesaremadeonacommon
[Link],thesubstratevoltageofalldevicesis
[Link]
thismayresultinanincreaseinsourcetosubstratevoltageas
weproceedverticallyalongtheserieschain(Vsb1=0,Vsb2
0).WhichresultsVth2>Vth1.
17)WhyisthesubstrateinNMOSconnectedtoGroundand
inPMOStoVDD?
wetrytoreversebiasnotthechannelandthesubstratebutwe
trytomaintainthedrain,sourcejunctionsreversebiasedwith
respecttothesubstratesothatwedontlooseourcurrentinto
thesubstrate.
18)WhatisthefundamentaldierencebetweenaMOSFET
andBJT?
InMOSFET,currentowiseitherduetoelectrons(nchannel
MOS)orduetoholes(pchannelMOS)InBJT,weseecurrent
duetoboththecarriers..[Link]
controlleddeviceandMOSFETisavoltagecontrolleddevice.
19)[Link]?
[Link]
isbecausethecurrentinBJTisexponentiallydependenton
inputwhereasinMOSFETitissquarelaw.

20)Whydowegraduallyincreasethesizeofinvertersin
buerdesignwhentryingtodriveahighcapacitiveload?
Whynotgivetheoutputofacircuittoonelargeinverter?
Wecannotuseabiginvertertodrivealargeoutputcapacitance
because,whowilldrivethebiginverter?Thesignalthathasto
drivetheoutputcapwillnowseealargergatecapacitanceof
[Link]
invertercandriveapproximatelyaninverterthats4times
biggerinsize.Sosayweneedtodriveacapof64unitinverter
thenwetrytokeepthesizinglikesay1,4,16,64sothateach
[Link]
primereasonbehindgoingforprogressivesizing.
21)InCMOStechnology,indigitaldesign,whydowedesign
[Link]
[Link]
trytolistallthereasonspossible?
InPMOSthecarriersareholeswhosemobilityisless[aprrox
half]thantheelectrons,[Link]
[Link],nmos
helpsinpullingdowntheoutputtogroundannPMOShelpsin
[Link]
arethesame,thenPMOStakeslongtimetochargeupthe
[Link]

carrierstochargethenodequicklyandovercometheslow
[Link]
falltimesfortheoutputnode.
22)WhyPMOSandNMOSaresizedequallyina
TransmissionGates?
InTransmissionGate,PMOSandNMOSaideachotherrather
[Link]
[Link]
PMOScompetingwhichisthereasonwetrytosizethem
proportionaltotheirmobility.
23)[Link]
whenthePMOSandNMOSareinterchangedwithone
anotherinaninverter?
[Link]
&drainalsoconnectedproperly...[Link]
supposeinputislogic1O/Pwillbedegraded1Similarly
degraded0;
24)AgoodquestiononLayouts.Give5importantDesign
techniquesyouwouldfollowwhendoingaLayoutforDigital
Circuits?
a)Indigitaldesign,decidetheheightofstandardcellsyouwant
[Link]
[Link]

[Link]
importantsincethiswillhelpyouuseplaceroutetooleasily
andalsoincaseyouwanttodomanualconnectionofallthe
blocksitsavesonlotofarea.
b)Useonemetalinonedirectiononly,Thisdoesnotapplyfor
metal1.Sayyouareusingmetal2todohorizontalconnections,
thenusemetal3forverticalconnections,metal4forhorizontal,
metal5verticaletc...
c)Placeasmanysubstratecontactaspossibleintheempty
spacesofthelayout.
d)Donotusepolyoverlongdistancesasithashugeresistances
unlessyouhavenootherchoice.
e)Usengeredtransistorsasandwhenyoufeelnecessary.
f)[Link]
designinBITSlicedmanner.
25)Whatismetastability?When/whyitwilloccur?Dierent
waystoavoidthis?
Metastablestate:Aunknownstateinbetweenthetwological
[Link]/Pcapisnotallowedto
charge/dischargefullytotherequiredlogicallevels.
Oneofthecasesis:Ifthereisasetuptimeviolation,
metastabilitywilloccur,Toavoidthis,aseriesofFFsisused
(normally2or3)whichwillremovetheintermediatestates.

26)[Link]
[Link]
delayofthetwoseriesNMOSinputsAandBwhichone
wouldyouplaceneartotheoutput?
Thelatecomingsignalsaretobeplacedclosertotheoutput
nodeieAshouldgotothenmosthatisclosertotheoutput.

OriginalURL:
hp://[Link]/Index_les/[Link]

You might also like