AOD414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 5.2m (VGS = 10V)
RDS(ON) < 7.0m (VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Top View
D
Bottom View
G
S
G
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
VGS
TC=25C
TC=100C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
TC=25C
TC=100C
Power Dissipation A
TA=70C
ID
66
200
IAR
30
EAR
140
mJ
2.5
1.6
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
50
TJ, TSTG
t 10s
Steady-State
Steady-State
100
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case C
20
IDM
PD
TA=25C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
85
B
Pulsed Drain Current
Power Dissipation B
Maximum
30
RJA
RJC
Typ
14.2
40
0.56
Max
20
50
1.5
Units
C/W
C/W
C/W
[Link]
AOD414
Electrical Characteristics (TJ=25C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250A, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= 20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250A
1.2
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
110
TJ=55C
VGS=10V, ID=20A
TJ=125C
VGS=4.5V, ID=20A
100
nA
2.4
4.2
5.2
7.5
5.6
85
Forward Transconductance
VDS=5V, ID=20A
85
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
6060
VGS=0V, VDS=15V, f=1MHz
1.8
gFS
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
7000
638
pF
pF
355
497
pF
0.45
0.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
96.4
115
nC
Qg(4.5V) Total Gate Charge
46.4
55
nC
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/s
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
0.2
13.6
nC
15.6
nC
15.7
21
ns
14.2
21
ns
55.5
75
ns
14
21
ns
31
38
24
29
ns
nC
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175C may be u sed if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
TC=100C
curve provides a single pulse rating.
T
C by the package current capability.
G. The maximum current rating
is limited
A=25
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 8 : Sep 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
[Link]
AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
50
VDS=5V
4.5V
40
3.5V
125C
30
ID(A)
ID(A)
40
30
VGS=3V
20
20
10
10
0
0
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
7.0
1.5
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.8
Normalized On-Resistance
6.5
5.5
ID=20A
1.4
5.0
VGS=4.5V
VGS=10V
1.2
VGS=10V
4.5
497
1.6
VGS=4.5V
6.0
RDS(ON) (m )
25C
4.0
3.5
3.0
0.8
0
20
40
60
80
100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
12
1.0E+02
1.0E+01
10
1.0E+00
125C
IS (A)
RDS(ON) (m )
ID=20A
TC=100C
1.0E-02
TA=25C
125C
1.0E-01
25C
25C
1.0E-03
-55 to 175
1.0E-04
2
1.0E-05
2
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
[Link]
AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=15V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
7000
6
4
2
6000
5000
4000
3000
Coss
2000
Crss
1000
0
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100s
10ms
10
Power (W)
1ms
0.1s
1s
10s
TJ(Max)=150C
TA=25C
60
40
20
DC
0.1
0.1
TJ(Max)=150C
TA=25C
80
100
30
497
100
RDS(ON)
limited
ID (Amps)
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Z JA Normalized Transient
Thermal Resistance
10
0.1
D=Ton/T
TJ,PK=TA+[Link]
RJA=50C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TC=100C
TA=25C
PD
-55 to 175
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
[Link]
AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25C
100
80
60
tA =
40
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
L ID
BV VDD
20
0
0.00001
80
60
40
20
0
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
25
50
75
100
125
150
175
TCASE (C)
Figure 13: Power De-rating (Note B)
100
497
Current rating ID(A)
80
60
40
20
0
0
25
50
75
100
125
150
TCASE (C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
175
[Link]
AOD414
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+ Vds
VDC
Qgs
Qgd
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
IF
Vds
[Link]