3.155J/6.
152J Lecture 10:
Lithography Part 1
Prof. Martin A. Schmidt
Massachusetts Institute of Technology
10/8/2003
Outline
The Lithographic Process
Basic Process
Definitions
Fundamentals of Exposure
Exposure Systems
Resists
Advanced Lithography
Recommended reading
Plummer, Chapter 5
Other: Campbell, Chapter 7,8,9
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 2
IC Process
An idea
Circuit Design
Process Simulation
Device Simulation
Layout
BOXES
Design Rules
Wafers
Fall 2003 M.A. Schmidt
A file
Mask
Shop
Wafer
Fab
3.155J/6.152J Lecture 10 Slide 3
Wafer Fab - Lithography
Most Common Measure of Complexity
# of Masks, Minimum Feature (examples)
Approximately 50% of the Process Steps
Oxidation
Litho
Anneal
Litho
Etch
Etch
Oxidation/Deposition
Metal Deposition
Litho
Litho
Etch
Etch
Implant
Sinter
Drives Infrastructure
Cleanliness
Vibration
Temperature and Humidity
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 4
Semiconductor Roadmap
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 5
Pattern Transfer Steps
Coat with
photoresist
Expose
Mask
Develop
Etch*
Strip resist
*Wet
Fall 2003 M.A. Schmidt
etch
3.155J/6.152J Lecture 10 Slide 6
Definitions
Metrics
Resolution
Throughtput
Registration (Alignment)
Exposure Systems - UV
Projection - Fraunhofer
Proximity - Fresnel
Contact - Fresnel
Advanced
DUV, E-Beam, X-Ray, Nano-imprint
Resists
Positive/Negative
Contrast
CMTF
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 7
Lithography Systems
Proximity
Contact
Projection
Mask
Wafer
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3.155J/6.152J Lecture 10 Slide 8
Contact/Proximity Printing
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 9
Contact/Proximity Printing
Applies when O < g < W2/O
Minimum resolvable feature = (Og)1/2
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 9
Proximity Printing Limits
Minimum resolvable feature = (Og)1/2
Gap = 20 Pm and Source = 436 nm
3.0 Pm
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 11
Projection Printing
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 12
Image from a Circular Opening
Note limit of d
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3.155J/6.152J Lecture 10 Slide 13
Resolving Features
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3.155J/6.152J Lecture 10 Slide 14
Rayleigh Limit
Rayleigh Criterion: When the
peak of one projection lands on
the first zero of the other.
S. Wolf, Microchip Manufacturing, Lattice Press
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 15
The Rayleigh Criterion
n=1 (air)
R = 1.22Of/d = 1.22Of/n(2fsinD) = 0.61O/nsinD
NA = nsinD Range from 0.16-0.76 )
R = 0.61O/NA = k1O/NA
(practical k1 = 0.6-0.8)
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 16
Modulation Transfer Function (MTF)
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 17
Modulation Transfer Function (MTF)
Intensity
Mask
MTF =
Distance
Intensity
Wafer
Imax - Imin
Imax + Imin
Imax
Imin
Fall 2003 M.A. Schmidt
Distance
3.155J/6.152J Lecture 10 Slide 18
MTF vs Feature Size
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 19
Depth of Focus
O/4 = G - Gcos)
Small ):
O/4 = G)2/2
) = sin ) = d/2f = NA
d
)
Depth of Focus = G = O/2(NA)2
= k2 O/(NA)2
f
Fall 2003 M.A. Schmidt
R = 0.61O/NA = k1O/NA
3.155J/6.152J Lecture 10 Slide 21
Resist Contrast
Dose = Intensity (W/cm-2) x time (s)
Negative
Q0
Qf
Exposure Dose (log scale)
mJ cm-2
Developed Thickness
Developed Thickness
Positive
Qf
Q0
Exposure Dose (log scale)
mJ cm-2
J = 1 / log10(Qf/Q0)
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3.155J/6.152J Lecture 10 Slide 22
Dose
Ideal Exposure Ideal Resist
Resist Thickness
Distance
Distance
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3.155J/6.152J Lecture 10 Slide 23
Dose
Real Exposure Ideal Resist
Qf
Resist Thickness
Distance
Fall 2003 M.A. Schmidt
Increase
Time
3.155J/6.152J Lecture 10 Slide 24
Dose
Real Exposure Real Resist
Qf
Q0
Resist Thickness
Distance
Fall 2003 M.A. Schmidt
Decrease
Contrast
Increase
Time
3.155J/6.152J Lecture 10 Slide 25
Dose
Dose
Decreasing Pitch
Qf
Q0
Distance
Resist Thickness
Resist Thickness
Distance
Distance
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 26
Developed Thickness
Critical Modulation Transfer Function (CMTF)
Q0
Qf
J = 1 / log10(Qf/Q0)
Fall 2003 M.A. Schmidt
CMTF =
Qf Q0
10J 1
= J
Qf + Q0
10 + 1
If J = 3, CMTF = 0.37
If J = 2, CMTF = 0.52
3.155J/6.152J Lecture 10 Slide 28
Effect of Coherence on MTF
CMTF
CMTF
Fall 2003 M.A. Schmidt
3.155J/6.152J Lecture 10 Slide 30