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2nd SEM Electronics 1 - Nov 2011 PDF

Answer to Section_ I lo Time:3 Hours BOARD is compulsory. From each section - rr, ur and rv. Explain the working of transistor as a switch. Doped. Explain the difference between intrinsic and extrinsic semiconductor with energy band diagram. Explain the three regions of operation - saturation, active and cut off region for C.E. Transistor. State the difference between J.F.E.T. And Biporar transistor. Explain briefly the working of opto_

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38 views3 pages

2nd SEM Electronics 1 - Nov 2011 PDF

Answer to Section_ I lo Time:3 Hours BOARD is compulsory. From each section - rr, ur and rv. Explain the working of transistor as a switch. Doped. Explain the difference between intrinsic and extrinsic semiconductor with energy band diagram. Explain the three regions of operation - saturation, active and cut off region for C.E. Transistor. State the difference between J.F.E.T. And Biporar transistor. Explain briefly the working of opto_

Uploaded by

Prasad C M
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

For More Question Papers Visit - [Link].

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Code :9EE-24

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Register
Number

II semester Diproma Examination, Novembe r 20rr


ELECTRICAL & ELECTRONICS ENGII{EERII\G
I

-I

IMax. Marks : 100

Notes.. (1) Answerto Section_ I

lo

Time:3 Hours

g.

BLECTROIUCS

BOARD

is compulsory.

from each section

- rr, ur & rv.

ib

(2) Answer any two full questions

ik

SECTION _

1.. (a) Fill in the blanks


(i) The most commonly used semiconductor material
is
(ii) A crystal diode is used as

5x1:5

(iv)

ed
ia

(iii) The base of the transistor is


The gate of J.F.E.T.

(v) The

biased.

gate is universal gate.

SECTION _

II

(a)

is

Explain the working of Transistor


as a switch.

.p

O)

doped.

Differentiate between conductor,


insulator and semiconductor with
energy
band

diagram.

(b)

(c)

Differentiate between intrinsic and


extrinsic semiconductor.
state the meaning of dooping and
exprain formation of p+1pe and
N-type
semiconductor.

3' (a) Explain the v.I. characteristics of diode with


neat diagram.
(b) List the types of diode and their application.

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'[Turn over

-"1

'l.1

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gnB-24

For the circuit given below find

(i)
(ii)

Output voltage

co
m

(c)

Voltage drop across series resistor

(iii) Current through Zener diode


5 kC)

kcl

4.

ib

lo

10

g.

R5:

(a)

Define alpha & beta and state the relation between


them.

ik

(b)

Mention with sketch the different types of transistor


configuration.

(c)

ia
w

Explain the three regions of operation - saturation,


active and cut off region
for C.E. transistor.

SECTIOI{

(a)

(b)

State the difference between J.F.E.T.


and Biporar transistor.

Explain the necessity of heat sink for power


transistor.

(a)

State the laws ofphoto electric emission.

6'

7.

(b)

Explain with sketch the operation of photo


diode and state one apprication.

(c)

Explain briefly the working of opto_isolator.

(a)
(b)

convert the decimal number 37 to its equivalent


binary.
convert the binary number il000r to its
equivalent

(iii) convert

7
5

List the advantages of linear I.c. over discrete


component circuit.
Define the terms SSI, MSI, LSI and VLSI.

(c) (i)
(ii)

5
3

.p

(c)

Explain with sketch the working of JFET.

ed

s.

- III

decimal.

the decimal number 255 tooctal equivalent.

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5
4
6

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.tr

bnn-zl

'\i

'

SECTION

NAND

(ii)

NoR

(iii)
(iv)

Buffer

g.
3

Explain the circuit operation and general characteristic of RTL and DTL.
Define the following

Propagation delay.
Fan in and fan out

List the advantages of logic gates.

4
3

Explain how to interface TTL and CMOS with LED.

Defineinterfacing.

Realise the basic OR,

AND

and

NOT gates by using only NAND gates.

.p
e

(b)
(c)

di
aw

10. (a)

EXOR

State De Morgan theorem.

(i)
(ii)
(c)

co
m

(i)

lo

). (a)
(b)

Draw the logic diagram with truth table for the following

ib

(c)

State Distributive and Atsorptive laws of Boolean algebra.

ik

8. (a)
(b)

- IV

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