1.
RFbehaviourofPassivecomponents
TheoreticallyaccircuitanalysistellsusthatheresistanceR,capacitanceCandinductanceLis
[Link]
Orasaphasor
1
Andforaninductor
3
Sofor1pFcapacitorand1nHinductorat50Hz
|
=3.18*109
2
50 1
3.14 10
Bothnegligible
However,Thewiresandplatesthatconnectthecomponentswillhave
frequencydependentpartsevenprintedcircuittracks.
Nowletsseewhathappenwhenthefrequencyincreases
[Link]
thecurrentbecomestimevariantthealternatingchargecarrierflowhasamagneticfieldthat
inducesanelectricfield(Faradaysinductionlaw)whosecurrentdensityopposestheinitialcurrent
[Link],r=0,[Link]
currentflowmigratestothesurface,andtheradiusofthiseffectintheconductorincreaseswith
[Link]
thatthecurrentdensityalongthewireaxis,zis
exp
Where
[Link],
knownastheskindepth.
1
Whichdescribesthespatialdropoffincurrentdensityasafunctionoffrequencyf,permittivity
[Link]
and
[Link]
thicknessisusefulforresistancecomputations,howeverthenormalisedresistance,R,canbe
simplifiertothus
[Link],[Link]
(totheconductor)inductanceimpedanceisthus
[Link]
ontheassumptionthat<<aandtherelativepermeabilityoftheconductor
[Link]
illustratestheskindepthwithfrequencyfordifferentconductors.
Figure1Skindepthbehaviourofcopper,cu=64.5X106S/m,AluminiumAl=40X106S/m,gold
Au=48.5X106S/m,andsoldersolder=6.38X106S/m
Theskindepthhasaphysicalmeaninginthatitdenotesthereductionincurrentdensitytoe1or
37%foitsvalueatthesurface.Figure2givestheproportionofcurrentdensityrelativetoa
cylindricalconductorradius.
Figure2Normalisedcurrentdensityvsradiusatdifferentfrequencies
Althoughtheinternalinductancecanbesignificantitistheexternalinductance,Lexresultingfrom
[Link]
cylindricalwireofradiusaandlengthlcanbeapproximatedby
ln
[Link]
Wire(AWG26)hasaradiusof0.2mm.Theinternalinductancefromequation8is
2
And
2.39
10
Andusingequation9tocalculatetheexternalinductanceatablecanbeconstructedshowingthe
rationofinternaltoexternalinduceatdifferentfrequencies
F(GHz)
0.1
2
5
(m)
6.266
1.4
0.886
Lex(nH)
17.1
17.1
17.1
Lin(nH)
0.0617
0.0138
0.00872
Lin/Lex
3.60X103
8.05X104
5.09X104
Resistorsathighfrequency.
Physicalresistorscomeinvariousforms
1)
2)
3)
4)
Carboncomposition
Wirewound
Metalfilm
Thinfilm
Photoinsert.
OfthesethethinfilmchiporsurfacemounteddevicesareusedforRFandMWcircuitsbecauseof
[Link],which
haveinductanceandinternalcapacitancecausedbychargeseparationintheresistormaterial.A
linearnetworkcircuitcanbedrawnthus:
Figure3TopLlaretheleadinductances,[Link]
[Link]
resistancewirewoundtocreatetheresistance
Takingtheequivalentcircuitfortheametalfilmresistorofnominalvalueof2kusingthecircuit
modelinfigure3wherethereare2.5cmofwireconnectionsof0.203mmradiusandthestray
capacitanceandtakingtheconductivityofcoppertobe64.5X106/Sm.Usingequation9
0 := 4 10
0 l
ln 2 l 1
Lex :=
2 a
Lex = 5.2 10
a := 0.203 10
l := 0.05
[Link]<<thanthe
wireradius.
Usingthetopequivalentcircuitinfigure3theimpedancewithfrequencycannowbeplotted
1
1/
Whichresultsinaresponse
Causedby
Ca
Caused
byLex
Figure4Frequencyresponseofthemagnitudeoftheresistorequivalentcircuit.TheDeepnadirat300Mhziscausedby
theseriesresonancebetweenLexandCa.Below2MhztheresistanceisthevalueofR
Soonlyatlowfrequencies,belowabout2Mhztheresistanceisthedesignvaluebutabovethatthe
straycapacitancefirstreducesitsvaluetothatatresonanceandthenincreaseduetothestray
inductance.
Capacitorsathighfrequency.
Chipcapacitorsarewidelyusedinfrequencydependentcircuits,filters,oscillatorsanddecoupling.
ADCthecapacitanceis
[Link]
otherthanairthenthepermittivityoffreespaceismultipliedbyaunitlessfactortherelative
permittivityusually>[Link]
impedanceisexpressedastheparallelcombinationofconductance,GeandsusceptanceC
1
TheconductanceGe=dielectricA/[Link]
ratioofthisconductivityandisconventionallycalledthelosstangent.
tan
tan
[Link]
Figure5Equivalentcircuitofcapacitanceathighfrequency,Liistheleadinductance,RstheleadresistanceandRethe
dielectriclossthatisfrequencydependent
WhereLiistheleadinductanceandRsistheleadresistanceReistheresistancerepresentingthe
dielectriclossRe=1/[Link]
1
1
Foraspecificexample:whatistheresponseofa47pFcapacitorwithdielectricmediumof
aluminiumoxide,Al2O3,whichhasalosstangentto104.Theconnectleadsare1.25cm,0.203mm(
26AWG)andtheconductivityofcopperis64.5X106/Sm.Usingequation9
Plottheresponseofthemodelinfigure5weseetheequivalentcapacitance,liketheresistancehas
resonantfrequency.
Zc( t) := j L + Rs +
1
j C +
Re
Ideal
capacitor
[Link]
withcapacitance.
[Link]
definedasanequivalentseriesresistance,ESR
Type equation here.
0 := 4 10
0 l
ln 2 l 1
Lex :=
2 a
Lex = 2.253 10
a := 0.203 10
l := 0.025
[Link]
account.
l
f 0 cu
Rs :=
2 a cu
Rs = 0.048
0 f
Rs :=
2 a cu
Rs = 0.048
ThelossresistanceinthecapacitorisRe=1/Ge
4
Tan := 1 10
12
Cc := 47 10
Re :=
2 Cc f Tan
Re = 3.386 10
At100Mhz.
Realcapacitorsareconstructedtominimisecontactimpedanceandmaximumcapacitance/volume
Figure7Constructionofaceramicchipcapacitor
Inductorsathighfrequency
[Link]
thoughadjacentwindingofthecoilsarelinkedbycapacitanceandthecoilconductorwillhave
resistancewhichitselfisfrequencydependentduetotheskineffect.
Figure8Physicalcoilwithseriesresistanceandwindingcapacitance
Theimplicationofthismodelisthatatsomefrequencyitwillresonate,[Link]
beforeanequivalentcircuitcanbedefinedbasedontheseobservations
Figure9Equivalentcircuitofarealinductor
AnditsAdmittiane=1/Zdescribedthus
1
Againasinthecapacitorasanexampleacoilisconstructedwith3.5turnsof127umdiameterwire
[Link]
2
L :=
10 r 0 N
9 r + 10 l
[Link]/
Lwire := 2 r N
Rdc :=
Lwire
cu a
Givingavalueof0.034ohms.Itsresponsewouldbeforacoilselfcapacitanceof40pF
Ideal
inductor
Figure10Frequencydependenceofarealinductor