FQP8N80C / FQPF8N80C / FQPF8N80CYDTU

N-Channel QFET MOSFET

800 V, 8.0 A, 1.55

Description

Features

8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,

ID = 4.0 A

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.

Low Gate Charge (Typ. 35 nC)

Low Crss (Typ. 13 pF)
100% Avalanche Tested

D
G
D
S

TO-220

G
D
S

Absolute Maximum Ratings

Symbol
VDSS
ID

TO-220F

FQP8N80C

FQPF8N80C

Unit
V

8*

5.1

5.1 *

32

32 *

800

- Continuous (TC = 100C)

Drain Current

TC = 25C unless otherwise noted.

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

IDM

TO-220F
Y-formed

- Pulsed

(Note 1)

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

17.8
4.5

-55 to +150

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

(Note 3)

30

850

mJ

178
1.43

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds

59
0.48

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case, Max.

RCS

Thermal Resistance, Case-to-Sink Typ, Max.

RJA

Thermal Resistance, Junction-to-Ambient, Max.

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

FQP8N80C
0.89

FQPF8N80C
2.66

Unit
C/W

0.5

--

C/W

62.5

62.5

C/W

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

December 2013

Part Number
FQP8N80C

Top Mark
FQP8N80C

FQPF8N80C

FQPF8N80C

TO-220F

Tube

N/A

N/A

50 units

FQPF8N80CYDTU

FQPF8N80C

TO-220F
(Y-formed)

Tube

N/A

N/A

50 units

Electrical Characteristics
Symbol

Package
TO-220

Packing Method
Tube

Reel Size
N/A

Tape Width
N/A

Quantity
50 units

TC = 25C unless otherwise noted.

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

800

--

--

--

V/C

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/ TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

--

0.5

VDS = 800 V, VGS = 0 V

--

--

10

VDS = 640 V, TC = 125C

--

--

100

IDSS

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

3.0

--

5.0

--

1.29

1.55

--

5.6

--

--

1580

2050

pF

--

135

175

pF

--

13

17

pF

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 4 A

gFS

Forward Transconductance

VDS = 50 V, ID = 4 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 400 V, ID = 8 A,
RG = 25
(Note 4, 5)

VDS = 640 V, ID = 8 A,
VGS = 10 V
(Note 4, 5)

--

40

90

ns

--

110

230

ns

--

65

140

ns

--

70

150

ns

--

35

45

nC

--

10

--

nC

--

14

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

ISM

--

--

32

--

--

1.4

VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/s

--

690

--

ns

--

8.2

--

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 8 A
Drain-Source Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

(Note 4)

Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 8 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Pulse test : pulse-width 300 s, duty cycle 2%.
5. Essentially independent of operating temperature.

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Package Marking and Ordering Information

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :

10

ID, Drain Current [A]

ID, Drain Current [A]

10

10

150 C
o

-55 C

25 C
0

10

Notes :
1. 250 s Pulse Test
2. TC = 25

-1

10

Notes :
1. VDS = 50V
2. 250 s Pulse Test
-1

-1

10

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

3.0

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

10

2.5

VGS = 10V
VGS = 20V

2.0

1.5

10

150

25
Notes :
1. VGS = 0V
2. 250 s Pulse Test

Note : TJ = 25

1.0

-1

12

16

10

20

0.2

0.4

0.6

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

2500

1.4

VDS = 160V

1500

Coss
1000

VDS = 400V

10

VGS, Gate-Source Voltage [V]

Capacitance [pF]

1.2

12

Ciss

Notes :
1. VGS = 0 V
2. f = 1 MHz

Crss

500

1.0

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

2000

0.8

VSD, Source-Drain voltage [V]

VDS = 640V
8

2
Note : ID = 8A

0
-1
10

10

10

Figure 5. Capacitance Characteristics

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

10

20

30

40

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

Figure 6. Gate Charge Characteristics

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

 !   

(Continued)

1.2

3.0

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0
Notes :
1. VGS = 10 V
2. ID = 4.0 A

0.5

0.0
-100

200

100

150

200

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R DS(on)

100 s

ID, Drain Current [A]

10 ms
DC

10

Notes :

-1

10

10 s
100 s

1 ms

Operation in This Area

is Limited by R DS(on)

10

10 s

10

10

1 ms
10 ms

10

DC

Notes :

-1

10

1. TC = 25 C

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

2. TJ = 150 C
3. Single Pulse
-2

-2

10

50

TJ, Junction Temperature [ C]

10

ID, Drain Current [A]

-50

TJ, Junction Temperature [ C]

10

10

10

10

10

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-2. Maximum Safe Operating Area

for FQPF8N80C

Figure 9-1. Maximum Safe Operating Area

for FQP8N80C

10

ID, Drain Current [A]

0
25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current

vs Case Temperature

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Typical Characteristics

ZJC(t), Thermal Response [oC/W]

10

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Typical Characteristics

(Continued)

D = 0 .5
0 .2
10

-1

N o te s :
1 . Z J C ( t) = 0 .7 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)

0 .1
0 .0 5
0 .0 2
0 .0 1

10

s in g le p u l s e

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

ZJC(t), Thermal Response [oC/W]

Figure 11-1. Transient Thermal Response Curve for FQP8N80C

10

D = 0 .5

N o te s :
1 . Z J C (t) = 2 .1 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .2
0 .1
10

0 .0 5

-1

0 .0 2
0 .0 1

10

s in g le p u ls e

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF8N80C

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

200nF

12V

VGS

Same Type
as DUT

50K

Qg

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
IG = const.
3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

VDS
RG

RL

VDS

90%

VDD

VGS

VGS

DUT

V
10V
GS

10%

td(on)

tr

td(off)

t on

t off

tf

Figure 13. Resistive Switching Test Circuit & Waveforms

VDS

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
BVDSS
IAS

ID
RG
V
10V
GS
GS

VDD

ID (t)
VDS (t)

VDD

DUT
tp

Time

tp

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

+
VDS
_

I SD

Driver
RG

Same Type
as DUT

VGS

VGS
( Driver )

I SD
( DUT )

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

DUT

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
[Link]

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
[Link]

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

Mechanical Dimensions

Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Y-Formed
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
[Link]

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

10

[Link]

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
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[Link], under Sales Support.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

2003 Fairchild Semiconductor Corporation

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1

11

[Link]

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET

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