UNISONIC TECHNOLOGIES CO.
, LTD
MJE13001
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
FEATURES
* Collector-base voltage: V(BR)CBO=600V
* Collector current: IC=0.2A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13001L-x-AB3-A -R
MJE13001G-x-AB3-A-R
MJE13001L-x-AB3-F -R
MJE13001G-x-AB3-F-R
MJE13001L-x-T92-B
MJE13001G-x-T92-B
MJE13001L-x-T92-K
MJE13001G-x-T92-K
MJE13001L-x-T92-A-B
MJE13001G-x-T92-A-B
MJE13001L-x-T92-A-K
MJE13001G-x-T92-A-K
[Link]
Copyright 2013 Unisonic Technologies Co., Ltd
Package
SOT-89
SOT-89
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
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QW-R201-055.H
MJE13001
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
RATINGS
UNIT
400
V
600
V
7
V
200
mA
SOT-89
550
Collector Power Dissipation
PC
mW
TO-92
750
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
VCEO
VCBO
VEBO
IC
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
BVCBO
BVCEO
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
BVEBO
VBE
ICBO
ICEO
IEBO
hFE1*
hFE2
VCE(SAT)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
TEST CONDITIONS
IC=100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
IE=100 mA
VCB=600V, IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A
MIN TYP MAX
600
400
7
1.1
100
200
100
VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
10
5
fT
IC=20mA,VCE=20V,f=1MHz
tS
tF
IC=50mA, IB1=-IB2=5mA,
VCC=45V
VBE(SAT)
UNIT
V
V
V
V
A
A
A
70
0.5
1.2
V
V
MHz
1.5
0.3
s
s
CLASSIFICATION OF hFE1*
RANK
A
RANGE 10-15
B
15-20
C
20-25
D
25-30
E
30-35
UNISONIC TECHNOLOGIES CO., LTD
[Link]
F
35-40
G
40-45
H
45-50
I
50-55
J
55-60
K
60-65
L
65-70
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MJE13001
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Capacitance,COB (pF)
Saturation Voltage,VBE(SAT),VCE(SAT)
DC Current Gain,hFE
Collecter Current,IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
[Link]
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