EXPERIMENT NO:
AIM
To plot the characteristics of a pn diode and to find its the cut in voltage and the dynamic
resistance.
COMPONENTS AND EQUIPMENTS REQUIRED.
1. DC supply
2. Diodes
3. Voltmeter
4. Ammeter
5. Rheostat
CIRCUIT DIAGRAM
THEORY:
A diode is the basic electronic component. Its property is that it can conduct only in one
direction. A diode can be made by joining a p type semiconductor and an n type semiconductor.
At the junction point there will be a voltage drop due to the migration of carriers. The voltage at
this barrier is known as barrier potential. Ideally the barrier potential is zero. But in practical
case there will be a drop of 0.7 Volts.
When the P side of diode is connected to the positive of power supply and N region is connected
to the negative of supply, the diode is said to be in forward biased condition. At this condition, if
the applied voltage is greater than the barrier potential of the diode, it starts conduction. After
the diode is arrived in the conduction mode, the drop across it remains at 0.7 V. After the
conduction starts, if the voltage is increased further, current trough it increases linearly with
voltage.
When the supply voltage is reversed the diode is said to be in reverse biased condition. Here
there is no conduction at lower voltage values .If we increase the voltage value further ,it is
observed that at a voltage the current sharply increases due to the breakdown of the P-
N junction. This damages the device. So care is to be taken while connecting diode in a circuit.
The main applications of diode are:
1. As rectifier
2. As clippers
3. In clamping circuits.
PROCEDURE
1. Connect the circuit as given in the circuit diagram
2. Adjust the rheostat to make the voltage across diode is 0 Volts
3. Now vary the rheostat to increase the voltage across diode in steps of 0.1 volts and observe the
corresponding current values.
4. Now take the readings of voltage and current values until voltage remains stationary.
5. Plot the graph
6. Now find the dynamic resistance from graph by taking the ratio of change in voltage to change
in current. Static resistance at any point can be calculated directly by dividing the voltage by
current at that voltage.
7. Now find the cut in voltage from the graph by taking the starting point of conduction.
OBSERVATION COLUMN
V(voltage) I(current)
Forward biasing : A p-n junction is said to be forward biased, if the positive terminal
of the external battery B is connected to p-side and the negative terminal to the n-side
of the p-n junction. Here the forward bias opposes the potential barrier V
B
and so the
depletion layer becomes thin. The majority charge carriers in the P type and N types
are repelled by their respective terminals due to battery B and hence cross the
junction. On crossing the junction, recombination process takes place. For every
electron hole combination, a covalent bond near the +ve terminal of the battery B is
broken and this liberates an electron which enters the +ve terminal of B through
connecting wires. This in turn creates more holes in P-region. At the other end, the
electrons from -ve terminal of B enter n-region to replace electron lost due to
recombination process. Thus a large current will flow to migration of majority carriers
across the p-n junction which is called forward current.
Reverse biasing: A p-n junction is said to be reverse biased if the positive terminal of
the battery B is connected to N-side and the negative terminal to p-side of the p-n
junction. The majority carriers are pulled away from the junction and the depletion
region becomes thick. The resistance becomes high when reverse biased and so there is
no conduction across the junction due to majority carriers. The minority carriers
however cross the junction and they constitute a current that flows in the opposite
direction. This is the reverse current.
GRAPH:
Cut in voltage=
Dynamic forward resistance at 10 mA=
Static forward resistance=
RESULT