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Zener Diode Specifications and Ratings

The document discusses specifications for several electronic components: 1) A Zener diode with maximum ratings including peak reverse voltage up to 40V and maximum average forward rectified current of 1A. It has a typical junction capacitance of 110pF and an operating temperature range of -65 to +125°C. 2) Resistors with resistance values from 0.005KOhm to 50KOhm and tolerances as tight as ±0.01%. They have a temperature coefficient as low as ±20ppm/K and can withstand surges. 3) A 1N914 diode with a maximum repetitive reverse voltage of 100V, average rectified forward current of 200mA,

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Akash Chakrabarty
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18 views7 pages

Zener Diode Specifications and Ratings

The document discusses specifications for several electronic components: 1) A Zener diode with maximum ratings including peak reverse voltage up to 40V and maximum average forward rectified current of 1A. It has a typical junction capacitance of 110pF and an operating temperature range of -65 to +125°C. 2) Resistors with resistance values from 0.005KOhm to 50KOhm and tolerances as tight as ±0.01%. They have a temperature coefficient as low as ±20ppm/K and can withstand surges. 3) A 1N914 diode with a maximum repetitive reverse voltage of 100V, average rectified forward current of 200mA,

Uploaded by

Akash Chakrabarty
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

1

ZENER DIODE



MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Ratings


Symbol IN5817 IN5818


IN5819 UNITS

Maximum Recurrent
Peak Reverse Voltage
V
RRM
20 30 40 Volts
Maximum RMS
Voltage
V
RMS
14 21
28
Volts
Maximum DC
Blocking Voltage
V
DC

20 30 40
Volts
Maximum Average
Forward Rectified
Current
I
O

1.0
Amps
Maximum Average
Forward Rectified
Current

I
FSM

25
Amps
Typical Thermal
Resistance (Note 1)
R
JC

80
C / W
Typical Junction
Capacitance (Note 2)
C
J

110
pF
Storage and
Operating
Temperature Range
T
STG

-65 to +125
C
2




3

RESISTER
0.005KOhm to 50KOhm
High Power: to 4 watts
Tolerance to 0.01%
Low temperature coefficient to 20ppm/K
Superior surge handling capability


ELECTRICAL CHARACTERISTICS

Specification


Value
Tolerances S: 0.01% to 5%
SL:0.1% toC5%
Temperature coefficient S:>100 : 20ppm/k
S:>1 to 100 : 50ppm/k
S: 1200ppm/k
Temperature range

-55 c to +275 c
Dielectric strength S:1000VAC
SL:500VAC
Insulation reistance

>1000 MOhms/Dry
Reel / tape width (mm)

S-1: 12/S-2:16/S-3:24/S-4:24/S-5:32/SL-2:16/SL-
4:24

ENVIRONMENTAL CHARACTERISTICS

Dielectric

0.5% +0.05

Load life
1%+0.05

Storage
0.5%+0.05

Moisture resistance
1%+0.05

Thermal shock
0.5%+0.05
4

RESISTER

STYLE CFR-12 CFR25S CFR-25 CFR50S CFR-50

CFR1WS



CFR100
Power
Rating at
70C
1/6W 1/4W 1/2W 1W 2W 3W




Maximum
Working
Voltage
150V

200V

250V 300V 350V

400V



500V

Maximum
Overload
Voltage
300V 400V 500V

600V 700V 800V



1,000V
Voltage
Proof
300V 400V 500V


700V



1,000V
Resistanc
e Range
1 - 10M & 0 for
E24 series value






Operating
Temp.
Range
-55C to +155C





100K OHM
FEATURES
Power Rating 1/6W, 1/4W, 1/2W, 1W, 2W, 3W
Resistance Tolerance 2%, 5%

ELECTRICAL CHARACTERISTICS
5

ENVIRONMENTAL CHARACTERISTICS


PERFORMANCETEST TESTMETHOD APPRAISE












Short Time Overload

IEC 60115-1 4.13

2.5 times RCWV for 5
Sec.

0.75%+0.05

Temperature
Coefficient




IEC 60115-1 4.7


in V-block for 60 Sec.,
test voltage by type




By type

IEC 60115-1 4.8 -55C to +155C By type
Insulation Resistance IEC 60115-1 4.6 in V-block for 60 Sec. >1,000M
95% Min. coverage
Solderability IEC 60115-1 4.17 2355C for 30.5 Sec.




IPA for 50.5 Min. with No deterioration of
coatings and
Solvent Resistance of
Marking

IEC 60115-1 4.30


Ultrasonic Markings

Robustness of
Terminations

IEC 60115-1 4.16
Direct load for 10 Sec. in
the direction of the
terminal leads


2.5kg (24.5N)





Periodic-pulse
Overload
IEC 60115-1 4.39 4 times RCWV 10,000
cycles (1 Sec. on, 25 Sec.
off)
1.0%+0.05






Damp Heat Steady
State
IEC 60115-1 4.24 402C, 90-95% RH for
56 days, loaded with 0.1
times RCWV


3.0%+0.05
6

DIODE
1N914 diode
Features
Low Current Leakage

Operating Temperature: -55OC to +150OC

Storage Temperature: -55OC to +150OC

Maximum Thermal Resistance; 300OC/W Junction to Ambient

Electrical Characteristics
Maximum Repetitive
Reverse Voltage
VRRM 100V


Average Rectified
Forward Current
IO 200mA


Power Dissipation PD 500mW

Junction Temperature TJ 150OC

Peak Forward Surge
Current
IFSM 1.0A
4.0A
Pulse Width=1.0
second
Pulse Width=1.0
Microsecond
Minimum Breakdown
Voltage
VR 100V
75V
IR=100uA,
IR=5.0uA
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B
VF 1.0V
720mV
TJ = 25OC
IFM = 10mA;
IFM = 20mA;
IFM = 100mA;
IFM = 5.0mA
Maximum Reverse
Current
IR 25nA
5.0uA
50uA
VR=20V, TJ=25OC,
VR=75V, TJ=25OC,
VR=20V, TJ=150OC
Typical Junction
Capacitance
CJ 4.0pF Measured at 1.0MHz,
VR=0V

7

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