FQP13N50 N-Channel QFET MOSFET
November 2013
FQP13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 m Description Features
12.5 A, 500 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 6.25 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
GD S
TO-220
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted.
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQP13N50 500 12.5 7.9 50 30
(Note 2) (Note 1) (Note 1) (Note 3)
Unit V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds
810 12.5 17 4.5 170 1.35 -55 to +150 300
Thermal Characteristics
Symbol RJC RCS Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Max. FQP13N50 0.74 0.5 Unit C/W C/W
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
Package Marking and Ordering Information
Part Number FQP13N50 Top Mark FQP13N50 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.48 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(on) gFS
VDS = VGS, ID = 250 A VGS =10 V, ID =6.25 A VDS = 50 V, ID = 6.25 A
3.0 ---
-0.33 10
5.0 0.43 --
V S
Dynamic Characteristics
Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1800 245 25 2300 320 35 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 13.4 A, VGS = 10 V VDD = 250 V, ID = 13.4 A, RG = 25
(Note 4)
------(Note 4)
40 140 100 85 45 11 22
90 290 210 180 60 ---
ns ns ns ns nC nC nC
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13.4 A, dIF / dt = 100 A/s --------290 2.6 12.5 50 1.4 --A A V ns C ISM VSD trr Qrr
Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 9.3 mH, IAS = 12.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD ! 13.4 A, di/dt ! 200 A/s, VDD ! BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature.
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
Typical Characteristics
ID , Drain Current [A]
ID , Drain Current [A]
10
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150
25 10
0
10
-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
10
10
-1
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4 1.2
RDS(ON) [ ], Drain-Source On-Resistance
1.0 0.8 0.6 0.4 0.2
VGS = 10V VGS = 20V
IDR , Reverse Drain Current [A]
10
10
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0
10
20
30
40
50
10
-1
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = 100V VDS = 250V VDS = 400V
VGS, Gate-Source Voltage [V]
Ciss Coss
Capacitance [pF]
2000 1500 1000 500 0 -1 10
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 13.4 A
10
10
10
15
20
25
30
35
40
45
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm alized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 6.7 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
15 10
2
Figure 8. On-Resistance Variation vs. Temperature
Operation in This Area is Limited by R DS(on)
12
ID, Drain Current [A]
10
1 ms 10 ms DC
ID, Drain Current [A]
100 s
10 s
9
10
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
10
10
10
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
ZJC(t), Thermal Response [oC/W]
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s i n g le p u ls e
$ N o te s : 1 . Z ( J C ( t) = 0 .7 4 % / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ( J C ( t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
IG = const. 3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS RG
V 10V GS
RL VDD
VDS
90%
VGS
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
L VDS ID RG V 10V GS GS
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
I SD ( DUT )
IFM , Body Diode Forward Current di/dt
IRM
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductors online packaging area for the most recent package drawings: [Link]
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]
FQP13N50 N-Channel QFET MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock F-PFS AccuPower FRFET AX-CAP* * SM BitSiC Global Power Resource PowerTrench GreenBridge PowerXS Build it Now TinyBoost Green FPS Programmable Active Droop CorePLUS TinyBuck Green FPS e-Series QFET CorePOWER TinyCalc QS Gmax CROSSVOLT TinyLogic Quiet Series GTO CTL TINYOPTO RapidConfigure IntelliMAX Current Transfer Logic TinyPower ISOPLANAR DEUXPEED TinyPWM Dual Cool Marking Small Speakers Sound Louder TinyWire EcoSPARK Saving our world, 1mW/W/kW at a time and Better TranSiC EfficentMax SignalWise MegaBuck TriFault Detect ESBC SmartMax MICROCOUPLER TRUECURRENT* SMART START MicroFET SerDes Solutions for Your Success MicroPak SPM MicroPak2 Fairchild STEALTH MillerDrive Fairchild Semiconductor UHC SuperFET MotionMax FACT Quiet Series Ultra FRFET SuperSOT-3 mWSaver FACT UniFET SuperSOT-6 OptoHiT FAST VCX SuperSOT-8 OPTOLOGIC FastvCore VisualMax OPTOPLANAR SupreMOS FETBench VoltagePlus SyncFET FPS XS
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, [Link], under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I66
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
[Link]