November 2013

FQP13N50C / FQPF13N50C
N-Channel QFET

MOSFET
500 V, 13 A, 480 m
Description
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

N
-
C
h
a
n
n
e
l

Q
F
E
T

M
O
S
F
E
T
2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
1
These N-Channel enhancement mode power field effect
transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power
factor correction, electronic lamp ballasts based on half
bridge topology.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
13 A, 500 V, R
DS(on)
= 480 m (Max.) @ V
GS
= 10 V,
I
D
= 6.5 A
Low Gate Charge (Typ. 43 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FQP13N50C FQPF13N50C Units
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current - Continuous (T
C
= 25C) 13 13 * A
- Continuous (T
C
= 100C) * 8 8 A
I
DM
Drain Current - Pulsed (Note 1) 52 52 * A
V
GSS
Gate-Source Voltage 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 860 mJ
I
AR
Avalanche Current (Note 1) 13 A
E
AR
Repetitive Avalanche Energy (Note 1) 19.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25C) 195 48 W
- Derate above 25C 1.56 0.39 W/C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 C
Symbol Parameter FQP13N50C FQPF13N50C Units
R
JC
Thermal Resistance, Junction-to-Case, Max. 0.64 2.58 C/W
R
JS
Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W
R
JA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W
Package Marking and Ordering Information
Part Number Top Mark Package Reel Size Tape Width Quantity
F
Q
P
1
3
N
5
0
C

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F
Q
P
F
1
3
N
5
0
C

N
-
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2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
2

1. Repetitive rating : pulse-width limited by maximum junction temperature.

2. L = 6 mH, IAS = 13 A, VDD = 50 V, RG = 25 , starting TJ = 25
o
C.
3. ISD 13 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25
o
C.
4. Essentially independent of operating temperature.
Packing Method
FQP13N50C_F105 FQP13N50C TO-220 N/A N/A 50 units Tube
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
FQPF13N50C_F105 FQPF13N50C TO-220F N/A N/A 50 units Tube
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 A 500 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 A, Referenced to 25C -- 0.5 -- V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V -- -- 1 A
V
DS
= 400 V, T
C
= 125C -- -- 10 A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 A 2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 6.5 A -- 0.39 0.48
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 6.5 A -- 15 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1580 2055 pF
C
oss
Output Capacitance -- 180 235 pF
C
rss
Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250 V, I
D
= 13 A,
R
G
= 25
(Note 4)
-- 25 60 ns
t
r
Turn-On Rise Time -- 100 210 ns
t
d(off)
Turn-Off Delay Time -- 130 270 ns
t
f
Turn-Off Fall Time -- 100 210 ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 13 A,
V
GS
= 10 V
(Note 4)
-- 43 56 nC
Q
gs
Gate-Source Charge -- 7.5 -- nC
Q
gd
Gate-Drain Charge -- 18.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 13 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 13 A,
dI
F
/ dt = 100 A/s
-- 410 -- ns
Q
rr
Reverse Recovery Charge -- 4.5 -- C
F
Q
P
1
3
N
5
0
C

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F
Q
P
F
1
3
N
5
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C

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2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
3
TypicaI Characteristics
10
-1 0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
$Notes ;
1. V
GS
=0V
2. f =1 MHz
C
rss
C
oss
C
iss
C
a
p
a
c
i
t
a
n
c
e

[
p
F
]
10
V
DS
, Drain-Source Voltage [V]
0 0 1 0 3 20 0 4 50
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
$Note: I
D
=13A
V
G
S
,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

[
V
]
Q
G
, Total Gate Charge [nC]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150%
$Notes:
1. V
GS
=0V
2. 250& sPulseTest
25%
I
D
R
,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
SD
, Source-Drain voltage [V]
0 5 10 15 20 25 30 35
0.5
1.0
1.5
V
GS
=20V
V
GS
=10V
$Note: T
J
=25%
R
D
S
(O
N
)

[
'
]
,
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics
10
-1 0
10
1
10
-1
10
0
10
1
V
GS
Top: 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom: : .5V
$Notes:
1. 250& sPulseTest
2. T
C
=25%
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
10
V
DS
, Drain-Source Voltage [V]
2 4 8 10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
$Notes:
1. V
DS
=40V
2. 250& sPulseTest
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
6
V
GS
, Gate-Source Voltage [V]
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

N
-
C
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F
E
T

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2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
4
TypicaI Characteristics (continued)
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
$Notes:
1. V
GS
=10V
2. I
D
=6.5A
R
D
S
(
O
N
)
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
$Notes:
1. V
GS
=0V
2. I
D
=250&A
B
V
D
S
S
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100ms
10s
DC
10ms
1ms
100s
OperationinThis Area
is LimitedbyR
DS(on)
$Notes:
1. T
C
=25
o
C
2. T
J
=150
o
C
3. SinglePulse
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100ms
10 s
DC
10 ms
1 ms
100s
OperationinThisArea
isLimitedbyR
DS(on)
$Notes:
1. T
C
=25
o
C
2. T
J
=150
o
C
3. SinglePulse
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP13N50C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50C
25 50 75 100 125 150
0
2
4
6
8
10
12
14
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [%]
F
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1
3
N
5
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C

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Q
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F
1
3
N
5
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C

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2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
5
TypicaI Characteristics (continued)
Z

J
C
(
t
)
,

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

[
o
C
/
W
]
t
1
, S q u a re W a ve P u l s e D u ra ti o n [s e c]
Figure 11-1. Transient Thermal Response Curve for FQP13N50C
t
1
, S q u a re W a ve P u l s e D u ra ti o n [s e c]
Figure 11-2. Transient Thermal Response Curve for FQPF13N50C
1 0
- 5
1 0
- 4
1 0
- 3
1 0
- 2
1 0
- 1
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
$ N o te s :
1 . Z
( J C
( t) = 0 .6 4 % /W M a x.
2 . D ut y F a cto r , D = t
1
/t
2
3 . T
J M
- T
C
= Z P
D M
*
( J C
( t)
s i n g l e p u l s e
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
1 0
- 5
1 0
- 4
1 0
- 3
1 0
- 2
1 0
- 1
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
$ Notes :
1. Z
( JC
(t) = 2.58 %/W Max.
2. D ut y Factor,
Z
1
D= t /t
2
3. T
JM
- T
C
P =
DM
*
( JC
(t)
s i n g l e p u l s e
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
t
1
P
DM
t
2
t
1
P
DM
t
2
Z

J
C
(
t
)
,

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

[
o
C
/
W
]
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF 12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF 12V
Same Type
as DUT
E
AS
= L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
= L I
AS
2
----
2
1
E
AS
= L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
V
GS
V
GS
I
G
= const.
2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
6
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

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-
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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
-------------------------- D =
Gate Pulse Width
Gate Pulse Period
--------------------------
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

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2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link]
7
2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link] 8
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

N
-
C
h
a
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F
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Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
[Link]
2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link] 9
F
Q
P
1
3
N
5
0
C

/

F
Q
P
F
1
3
N
5
0
C

N
-
C
h
a
n
n
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l

Q
F
E
T

M
O
S
F
E
T
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
[Link]
2003 Fairchild Semiconductor Corporation
FQP13N50C / FQPF13N50C Rev. C0
[Link] 10
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intended to be an exhaustive list of all such trademarks.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower
AX-CAP

*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED

Dual Cool
EcoSPARK

EfficentMax
ESBC
Fairchild

Fairchild Semiconductor

FACT Quiet Series

FACT

FAST

FastvCore
FETBench
FPS
F-PFS
FRFET

Global Power Resource

SM
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Marking Small Speakers Sound Louder
and Better
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
mWSaver

OptoHiT
OPTOLOGIC

OPTOPLANAR

PowerTrench

PowerXS
Programmable Active Droop
QFET

QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM

STEALTH
SuperFET

SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS

SyncFET
Sync-Lock
*
TinyBoost

TinyBuck

TinyCalc
TinyLogic

TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT

*
SerDes
UHC

Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS

Datasheet Identification Product Status Definition

Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
[Link], under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I66
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