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GATE Electronics & Communication Guide

The document is a textbook on GATE Electronics & Communication divided into 3 volumes covering various topics related to electronics and communication engineering. It contains 11 units in each volume discussing topics like networks, electronics devices, analog circuits, digital circuits, signals & systems, control systems, communication systems, electromagnetics, engineering mathematics, verbal and quantitative analysis. Sample chapters are provided at the end with questions and answers related to BJT amplifiers.

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0% found this document useful (0 votes)
38 views32 pages

GATE Electronics & Communication Guide

The document is a textbook on GATE Electronics & Communication divided into 3 volumes covering various topics related to electronics and communication engineering. It contains 11 units in each volume discussing topics like networks, electronics devices, analog circuits, digital circuits, signals & systems, control systems, communication systems, electromagnetics, engineering mathematics, verbal and quantitative analysis. Sample chapters are provided at the end with questions and answers related to BJT amplifiers.

Uploaded by

Ankur Singh
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

GATE Electronics & Communication(3 volumes) by KANODIA

Contents:
VOLUME- 1
UNIT-1 NETWORKS 1. Basic Concepts 2. Graph Theory 3. Method of Analysis 4. Circuit Theorems 5. Basic RL and RC Circuits 6. The RLC Circuits 7. Sinusoidal Steady State Analysis 8. Circuit Analysis in the s Domain 9. Magnetically Coupled Circuits 10. Two Port Network 11. Frequency Response 12. Gate Solved Questions (1996-2013) UNIT-2 ELECTRONICS DEVICES 1. Semiconductor in Equilibrium 2. Semiconductor in Non-Equilibrium 3. PN Junction Diode 4. Bipolar Junction Transistor 5. MOSFET 6. JFET 7. Integrated Circuit 8. Gate Solved Questions(1996-2013) UNIT-3 ANALOG CIRCUITS 1. Diode Circuits 2. BJT Biasing 3. BJT Amplifiers 4. FET Biasing 5. FET Amplifiers 6. Output Stages and Power Amplifiers 7. Op-amp Characteristics and Basic Circuits 8. Op-amp Applications 9. Active Filters 10. Gate Solved Questions

VOLUME- 2
UNIT-4 DIGITAL CIRCUITS 1. Number System and Codes 2. Boolean Algebra and Logic Simplification 3. The K-Map 4. 5. 6. 7. Combinational Circuits Sequential Circuits Logic Families Interfacing to Analog

8. Microprocessor 9. Gate Solved Questions UNIT-5 SIGNALS & SYSTEMS 1. Continuous Time Signals 2. Continuous Time Systems 3. Discrete Time Signals 4. Discrete Time Systems 5. The Laplace Transform 6. The Z Transform 7. Continuous Time Fourier Transform 8. Discrete Time Fourier Transform 9. Continuous Time Fourier Series 10. Discrete Time Fourier Series 11. Sampling and DFT 12. Gate Solved Questions UNIT-6 CONTROL SYSTEMS 1. Transfer Functions 2. Stability 3. Time Response 4. Root-Locus Technique 5. Frequency-Domain Analysis 6. Design of Control Systems 7. State Variable Analysis 8. Gate Solved Questions

VOLUME- 3
UNIT-7 COMMUNICATION SYSTEMS 1. Random Variable 2. Random Process 3. 4. 5. 6. Noise Amplitude Modulation Angle Modulation Digital Transmission

7. Information Theory and Coding 8. Spread Spectrum 9. Gate Solved Questions UNIT-8 ELECTROMAGNETICS 1. Vector Analysis 2. Electrostatics 3. Magnetostatics 4. Maxwell's Equations 5. Electromagnetic Wave Propagation 6. Transmission Lines 7. Waveguides 8. Antennas 9. GATE Solved Questions UNIT-9 ENGINEERING MATHEMATICS 1. Linear Algebra 2. 3. 4. 5. 6. 7. 8. 9. Differential Calculus Integral Calculus Directional Derivatives Differential Equation Complex Variable Probability & Statistics Numerical Methods GATE Solved Questions

UNIT-10 VERBAL ANALYSIS 1. Synonyms 2. Antonyms 3. Agreement 4. Sentence Structure 5. Spellings

6. Sentence Completion 7. Word Analogy 8. Reading Comprehension 9. Verbal Classification 10. Critical Reasoning 11. Verbal Deduction UNIT-11 QUANTITATIVE ANALYSIS 1. Number System 2. Surds, Indices and Logarithm 3. Sequences and Series 4. Average, Mixture and Alligation 5. Ratio, Proportion and Variation 6. Percentage 7. Interest 8. Time, Speed & Distance 9. Time, Work & Wages 10. Data Interpretation 11. Number Series

GATE Electronics & Communication by KANODIA (3 volumes), 7th Edition Sample Chapter

AC 3
BJT AMPLIFIERS
AC 3.1

If the transistor parameter are b = 180 and Early voltage VA = 140 V and it is biased at ICQ = 2 mA, the value of hybrid- p parameter gm , rp and ro are respectively (A) 14 A/V, 2.33 kW , 90 kW (B) 14 A/V, 90 kW , 233 kW (C) 77 mA/V, 2.33 kW , 70 kW (D) 77.2 mA/V, 2.33 kW , 70 kW

Common Data For Q.2-3 :


Consider the circuit shown below. The transistor parameters are b = 120 and VA = 3.

AC 3.2

The hybrid- p parameter values of gm , rp and ro are (A) 24 mA/V, 3, 5 kW (B) 24 mA/V, 5 kW , 3 (C) 48 mA/V, 10 kW , 18.4 kW (D) 48 mA/V, 18.4 kW , 10 kW The small signal voltage gain Av = vo /vs is (A) - 4.38 (B) 4.38 (C) - 1.88 (D) 1.88 The nominal quiescent collector current of a transistor is 1.2 mA. If the range of b for this transistor is 80 # b # 120 and if the quiescent collector current changes by ! 10 percent, the range in value for rp is (A) 1.73 kW < rp < 2.59 kW (B) 1.93 kW < rp < 2.59 kW (C) 1.73 kW < rp < 2.59 kW (D) 1.56 kW < rp < 2.88 kW

AC 3.3

AC 3.4

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AC 76

BJT Amplifiers

AC 3

AC 3.5

Voltage gain Av = vC of the given amplifier circuit is vs

(A) 750 (C) 50


AC 3.6

(B) 150 (D) 100

A transistor with b = 120 is biased with a collector current IC = 1.2 mA. Values of gm , rp and re respectively are, (Vthernal = 25 mV) (A) 48 mA/V, 20.6 W , 2.5 kW (B) 48 mA/V, 2.5 kW , 20.6 W (C) 20.83 mA/V, 20.6 W , 2.5 kW (D) 20.83 mA/V, 2.5 kW , 20.6 W

Common Data For Q.7-8 :

Consider the circuit shown below. The transistor parameter are b = 100 and VA = 3

w
AC 3.7 AC 3.8

n . w w

d o

c . ia

n i o.

If Q -point is in the center of the load line and ICQ = 0.5 mA, the values of RC and VBB are (A) 10 kW , 0.95 V (B) 10 kW , 1.45 V (C) 48 kW , 0.95 V (D) 48 kW , 1.45 V The small signal parameters gm, rp and ro are (A) 38.6 mA/V, 3, 5.18 kW (B) 386 mA/V, 5.18 kW , 3 (C) 19.3 mA/V, 3, 5.18 kW (D) 19.3 mA/V, 5.18 kW , 3 A bipolar amplifier circuit shown below, exhibits the following characteristic

AC 3.9

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AC 3

BJT Amplifiers

AC 77

IC = Is exp b VBE l, VT = 25 mV 2VT If there is no early effect, then voltage gain of the amplifier for a bias current IC = 1 mA is (A) 20 (B) 40 (C) 10 (D) 100
AC 3.10

If a resistor is introduced in the emitter of a common-emitter (CE) amplifier then (A) both input impedance and voltage gain increases (B) input impedances increases and voltage gain decreases (C) input impedances decreases and voltage gain increases (D) both input impedances and voltage gain decreases

Common Data For Q.11-12 :


The transistor is following amplifiers circuits has parameters b = 100 , rp = 2.5 kW

AC 3.11

If input impedances of the two circuits are given as R1 and R2 respectively then (A) R1 = 2.5 kW , R2 = 2.5 kW (B) R1 = 2.5 kW , R2 = 5 kW (C) R1 = 500 kW , R2 = 50 W (D) R1 = 50 W , R2 = 500 W Ratio of voltage gain Av 1 /Av 2 for the two circuits is (A) 2 (B) 0.5 (C) 4 (D) 0.5 Consider the transistor amplifier circuit shown in figure below. Given that b = 100, Vthermal = 25 mV and voltage gain Av = 20 . If the transistor is biased with collector current IC = 1 mA, then value of RC is

AC 3.12

n . w w

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AC 3.13

(A) 3.2 kW (C) 6.4 kW

(B) 23 kW (D) 2.7 kW

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AC 78

BJT Amplifiers

AC 3

AC 3.14

The transistor in BJT amplifier circuit shown below has b = 60 , ro = 20 kW , Vthermal = 26 mV.

The value of output impedance and voltage gain are (A) 1.98 kW , - 238.27 (B) 20 kW , - 238.27 (C) 22.2 kW, - 23.82 (D) 2.2 kW, - 23.82
AC 3.15

Consider an amplifier circuit shown below. Transistor parameters are given as b = 100 and Vthermal = 25 mV.

The input impedance and voltage gain respectively are (A) 0.99 kW , 200 (B) 390 kW , 200 (C) 0.99 kW , - 400 (D) 390 kW , 400
AC 3.16

n . w w

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n i o.

In the following circuit, voltage drop across RC and RE are equal to 20VT and 4VT respectively. What is the gain of circuit. (VT is thermal voltage, assume b is high)

(A) - 0.25 (C) - 5


AC 3.17

(B) - 4 (D) - 1

The parameters of the transistor in the circuit shown below are b = 100 and VA = 100 V.

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AC 3

BJT Amplifiers

AC 79

The small-signal voltage gain Av = vo /vs is (A) 80 (B) - 80 (C) 40 (D) - 40


AC 3.18

In the circuit shown below the Q -point is in the center of the load line. The transistor parameters are b = 150 and VA = 3.

The small-signal voltage gain Av = vo is vs (A) - 16.43 (B) - 9.438 (C) - 5.75 (D) - 3.94

n . w w

d o

c . ia

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Common Data For Q.19-20 :


For the circuit shown below transistor parameters are b = 100, VBE (ON) = 0.7 V, VA = 80 V

AC 3.19

The input impedance is (A) 100 kW (C) 22.2 kW

(B) 25 kW (D) 201 kW

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AC 80

BJT Amplifiers

AC 3

AC 3.20

The small signal voltage gain Av = vo is vs (A) 0.96 (B) 0.99 (C) 1 (D) 0.90

Common Data For Q.21-22 :


In the circuit shown below b = 100 and VA = 3.

AC 3.21

The small signal voltage gain Av = vo is vs (A) - 1.96 (B) - 3.18 (C) - 4.73 (D) - 10.43

AC 3.22

If the total instantaneous E -C voltage is to remain in the range 1 # vEC # 11 V, the maximum undistorted swing in the output voltage is (A) 2.58 V peak to peak (B) 5.16 V peak to peak (C) 1.48 V peak to peak (D) 2.96 V peak to peak In the circuit shown below b = 80 and VA = 3

AC 3.23

n . w w

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The signal voltage gain Av = vo is vs (A) - 166.23 (C) - 61.7

(B) - 47.5 (D) - 114

Common Data For Q.24-25 :


In the circuit shown below transistor has b = 65 and VA = 75 V.

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AC 3

BJT Amplifiers

AC 81

AC 3.24

The transistor parameters rp and ro are (A) 2.14 kW , 82.48 kW (B) 2.14 kW , 95.2 kW (C) 200 kW , 1 kW (D) 214 kW , 952 kW The small signal trans-conductance Gs = io is vs (A) - 303 mA/V (B) - 30.3 mA/V (C) - 11.6 mA/V (D) - 116 mA/V In the following circuit, impedance Rb seen through base of the transistor is

AC 3.25

AC 3.26

w
AC 3.27

n . w w

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n i o.

(A) 100 W (C) 502 W

(B) 9.90 W (D) 900 W

For a transistor, parameters are b = 180 and VA = 150 V, and it is biased at ICQ = 2 mA. if the collector of the transistor is connected to the base terminal, the small signal resistance re = vce /ic of this two-terminal device is (A) 12.88 kW (B) 12.88 W (C) 2.33 kW (D) 2.33 W The Early voltage of a BJT is VA = 75 V. The minimum required collector current, such that the output resistance is at least r o = 200 kW , is (A) 1.67 mA (B) 5 mA (C) 0.375 mA (D) 0.75 mA

AC 3.28

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AC 82

BJT Amplifiers

AC 3

AC 3.29

In the common-base stage of fig. shown below, ICQ = 1 mA and b = 75 . The input resistance is

(A) 45 kW (C) 90 kW

(B) 45 W (D) 90 W

Common Data For Q.30-31 :


Consider the transistor amplifier circuit shown below. The transistor parameters are given as b = 100 , VBE (on) = 0.7 V, VA = 3

AC 3.30

Current gain Ai = io is i1 (A) 0.48 (C) 0.92

AC 3.31

Voltage gain Av = vo is vs (A) 177.1 (C) 50

n . w w

d o

c . ia
(B) 1.00 (D) 0.98 (B) 345.2 (D) 384.6

n i o.

Common Data For Q.32-33 :


Consider the common Base amplifier shown below. The parameters are gm = 2 mS and ro = 250 kW . Find the Thevenin equivalent faced by load resistance RL

AC 3.32

The thevenin voltage vTH is (A) 263vi (C) 346vi

(B) 132vi (D) 498vi

AC 3.33

The thevenin equivalent resistance RTH is (A) 384 kW (B) 697 kW (C) 408 kW (D) 915 kW

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AC 3

BJT Amplifiers

AC 83

Common Data For Q.34-35 :


The common-base amplifier is drawn as a two-port in figure shown below. The parameters are b = 100 , gm = 3 mS, and ro = 800 kW .

AC 3.34

The h -parameter h21 is (A) 2.46 (C) 0.5 The h -parameter h12 is (A) 3.8 # 10-4 (C) 3.8 # 10 4

(B) 0.9 (D) 0.67 (B) 4.83 # 10-3 (D) 4.83 # 103

AC 3.35

AC 3.36

Consider an amplifier circuit shown in figure. If the transistors Q1 and Q2 has parameters gm1, rp1 and gm 2, rp2 respectively, then voltage gain Av is

gm1 rp2 1 + gm 2 rp 2 g r (C) m1 p1 gm 2 rp 2 (A)

n . w w

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gm 2 rp 2 1 + gm 2 rp 2 gm1 rp1 (D) 1 + gm 2 rp 2 (B)

Common Data For Q.38-39 :


In the given Darlington pair circuit of figure shown below, transistor Q1 and Q2 parameters are b1, rp1 and b 2, rp2 respectively,

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AC 84

BJT Amplifiers

AC 3

AC 3.37

The current gain Ai = io of the circuit is i1 (B) b1 + b 2 (A) b1 b 2 (C) b1 + b 2 + b1 b 2 (D) b1 + b 2 - b1 b 2 Input impedance Rin is (A) rp1 + rp2 (C) b1 rp1 + b 2 rp2 (B) rp1 + (1 + b1) rp2 (D) (1 + b1) rp1 + rp2

AC 3.38

AC 3.39

The feedback used in the circuit shown in figure can be classified as

(A) shunt-series feedback (C) series-shunt feedback


AC 3.40

The trans-conductance gm of the transistor shown in figure is 10 mS. The value of the input resistance Rin is

w
(A) 10.0 kW (C) 5.0 kW
AC 3.41

n . w w

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(B) shunt-shunt feedback (D) series-series feedback

n i o.

(B) 8.3 kW (D) 2.5 kW

The transistor parameters of Q1 and Q2 of circuit shown in fig are (gm1, rp1) and (gm1, rp2) respectively.

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AC 3

BJT Amplifiers

AC 85

The Voltage gain Av of the following circuit is (A) gm1 rp1 (B) gm 2 rp1 (C) gm1 rp2 (D) gm 2 rp2
AC 3.42

In the single-stage transistor amplifier circuit shown in Figure, the capacitor CE is removed. Then, the ac small-signal mid-band voltage gain of the amplifier

(A) increase (C) is unaffected

(B) decreases (D) drops to zero

Common Data For Q. 43-44

The transistor in the amplifier circuit shown in Figure is biased at IC = 1 mA Use VT = kT/q = 26 mV, b0 = 200, r b = 0, and r 0 " 3

w
AC 3.43 AC 3.44

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Small-signal mid-band voltage gain vo /vi is (A) - 8 (B) 38.46 (C) - 6.62 (D) - 1 What is the required value of CE for the circuit to have a lower cut-off frequency of 10 Hz (A) 0.15 mF (B) 1.59 mF (C) 5 mF (D) 10 mF
***********

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AC 86

BJT Amplifiers

AC 3

SOLUTIONS
AC 3.1

Option (D) is correct. ICQ = 2m = 77.2 mA/V 0.0259 Vt bV b = 180 = 2.33 kW rp = t = gm 77.2m ICQ ro = VA = 140 = 70 kW 2m ICQ Option (B) is correct. IBQ = 2 - 0.7 = 5.2 m A 250k gm = ICQ = bIB = (120) (5.2m) = 0.642 mA gm = ICQ = 0.624 = 24 mA/V 0.0259 Vt bV b = 120 = 5 kW , ro = 3 rp = t = gm 24m ICQ

AC 3.2

AC 3.3

Option (C) is correct. Av =- gm RC a

AC 3.4

Option (D) is correct.

w
AC 3.5

n . w w
rp =

bRC rp = k rp + RB rp + RB 5k =- (24m) (4k) b =- 1.88 5k + 250k l bVT , ICQ (120) (0.0259) = = 2.88 kW , 1.08m (80) (0.0259) = = 1.56 kW 1.32m

d o

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n i o.

rp (max) rp (min)

Option (B) is correct. By DC analysis of the amplifier circuit IC = IE = 0.5 mA So, vC = 5 - 7.5 # 0.5 = 1.25 V gm = IC = 0.5mA = 20 mA/V VT 25mV Small signal equivalent circuit

(since b is high)

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AC 3

BJT Amplifiers

AC 87

v p =- vi Output voltage vc is given as vC =- gm v p # 7.5 = gm vs # 7.5 Av = vC = gm # 7.5 = 20 # 7.5 = 150 vs


AC 3.6

Option (B) is correct. gm = IC = 12mA = 48 mA/V VT 25mV b 120 rp = = = 2.5 kW gm 48 # 10-3 re = rp = 2500 = 20.6 W 121 (b + 1)

AC 3.7

Option (A) is correct. VECQ = 1 VCC = 5 V 2 & VECQ = 10 - ICQ RC = 5 10 - (0.5 m) RC = 5 RC = 10 kW , I IBQ = CQ = 0.5 = 5 mA 100 b VEB (ON) + IBQ RB = VBB 0.7 + (5m) (50k) = 0.95 V

&
AC 3.8

Option (D) is correct.

AC 3.9

Option (A) is correct. IC = Is exp b VBE l 2VT Transconductance gm = 2IC = IC 2VT 2VBE Output impedance Rout = RC (Since there is no early effect) Equivalent circuit is

n . w w
gm =

ICQ = 0.5 = 19.3 mA/V 0.0259 Vt (100) (0.0259) bV rp = t = = 5.18 kW , ro = 3 0.5m ICQ

d o

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n i o.

Voltage gain is vo = g R = IC RC = (1) (1) = 20 m C vin 2VT (2) (0.025)

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AC 88

BJT Amplifiers

AC 3

AC 3.10

Option (B) is correct. CE amplifier with and without emitter resistance are shown in the following figure

By small signal analysis of the above circuit

Input impedance Rin = rp

n . w w
m

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Input impedance Rin = [rp + (b + 1)] RE So, emitter degeneration increases the input impedance of the CE stage Voltage gain is Av = gm RC (with no emitter resistance) -g Av = 1 m (with emitter resistance) g + RE So, voltage gain decreases.
AC 3.11

Option (B) is correct. For CE configuration given in figure, input impedances calculated in previous question as R1 rp = 2.5 kW R2 = [rp + (1 + b) RE ] = rp + bRE = 2.5 + 100 # 25 = 5 kW (a b >> 1)

AC 3.12

Option (A) is correct. As calculated in previous question Av1 =- gm RC (without emitter resistance)

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AC 3

BJT Amplifiers

AC 89

Av =2

Av 1 Av 2

gm RC [1 + ^ r1 + gm h] RE = 1 + b 1 + gm l R E rp
p

(with emitter resistance)

gm + gm l R E b = 1 + gm c 1 + 1 m R E b Av b So, . 1 + gm R E = 1 + : R E rp Av = 1 + 100 # 25 =2 2.5 # 103 = 1 +b


1 2

(` b = gm rp) (a b >> 1)

AC 3.13

Option (A) is correct. For the given amplifier circuit voltage gain can be calculated as By small signal equivalent circuit

Voltage gain

From the circuit

and

n . w w
Av =

Av = vo = vo : vA vin vA vin

d o

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n i o.

vA = rp + (b + 1) RE vin rp + (b + 1) RE + RB - gm RC vo = vA 1 + b 1 + gm l R E rp rp + (b + 1) RE - gm RC rp : rp + (b + 1) RE + RB rp + (1 + b) RE bRC =rp + (b + 1) RE + RB - RC Av = rp + b + 1 R + RB b c b m E b Av = RB 1 c gm + R E + b m - RC

(a gm rp = b)

or, for b >> 1

RC = Av c 1 + RE + RB m gm b Here, b = 100 , RB = 1 kW , RE = 125 W gm = IC = 1 mA = 1 A/V VT 25 mV 25

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AC 90

BJT Amplifiers

AC 3

So,
AC 3.14

RC = 20 b 25 + 125 + 1000 l = 3.2 kW 100

Option (A) is correct. By DC analysis of the circuit IB = VCC - VBE = 12 - 0.7 = 51.36 mA RB 220kW IE = (b + 1) IB = (60 + 1) (51.36) = 3.13 mA re = VT = 26 mV = 8.31 W IE 3.13 mA From small signal analysis (re -model) Output impedance of the circuit is given as Zo = ro RC = 20 kW 2.2 kW = 1.98 kW Voltage gain Av = -RC ro - 1.98 kW = =- 238.27 re 8.31 W

AC 3.15

Option (C) is correct. Bu DC analysis

IB = VCC - VBE = 10 - 0.7 = 25 A 372 RB IC = bIB = 10 # 25 = 2.5 mA re = VT = 25 mV = 10 W IC 2.5 mA By equivalent re -model of the amplifier

w
AC 3.16

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Input impedance Zi = RB bre = (372 kW) (100 # 10 W) = (372 kW) 1 kW = 0.99 kW Voltage gain Av =- RC =- 4 kW =- 400 re 10 W Option (B) is correct. By small signal analysis of the given circuit, voltage gain

Av =-

RC =- RC =- RC IC 1 V RE IC + VT T RE + gm + R E IC

(b >> 1)

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AC 3

BJT Amplifiers

AC 91

b is large, so IC . IE Av =AC 3.17

RC IC =- - 20VT =- 20 =- 4 5 RE IE + VT 4VT + VT

Option (B) is correct. ICQ = b 100 l (0.35) = 0.347 mA 1001 The small-signal equivalent circuit is as shown below

vp = vo vo vs gm rp ro

w
AC 3.18

n . w w
ro 7k rp 10k Av

rp 10k (vs), 500 + rp 10k =- gm v p (ro 7k) rp 10k =- gm f p (ro 7k) 500 + rp 10k I = CQ = 0.347m = 13.13 mA/V 0.0259 Vt b bV = = t = 100 = 7.6 kW gm 13.13m ICQ b = = 100 = 288 kW 0.347m ICQ = 288 # 7 = 6.83 kW 288 + 7 = 7.6 # 10 = 4.32 kW 7.6 + 10 =- 13.13m b 4.32k l (6.83k) =- 80 500 + 4.32k

d o

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Option (C) is correct. DC Analysis : ICQ = IEQ & & VCEQ = 5 = 10 - ICQ (RC + RE ) 5 = 10 - ICQ (1.2k + 0.2k) ICQ = 3.57 mA IBQ = 3.57 = 23.8 mA 150

AC Analysis :

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AC 92

BJT Amplifiers

AC 3

(0.0259) bVt = (150) = 1.09 kW, ro = 3 3.57m ICQ - (bIb) RC , Av = vo = vs vs rp = vs = Ib rp + (b + 1) RE Ib - (150) (1.2) k - bRC Av = = =- 5.75 rp + (1 + b) RE 1.09k + (151) (0.2k)
AC 3.19

Option (C) is correct. By DC analysis of the circuit

2.5 - 25 # 103 IBQ - 0.7 - 2 # 103 (b + 1) IBQ = 0 2.5 - 25 # 103 IBQ - 0.7 - 2 # 103 (101) IBQ = 0 1.8 - 227 # 103 IBQ = 0 & IBQ = 7.92 mA So, ICQ = bIb = 100 # 7.92 mA = 0.792 mA Small signal ac analysis

n . w w
rp =

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bVT 100 # 0.026 = = 3.28 kW 0.792 ICQ ro = VA = 80 . 100 kW 0.793 ICQ

Rib = rp + (1 + b) (ro RE ) = 3.28 + (101) (100 2) = 201 kW Input impedance Ri = R1 R2 Rib = 50 50 201 = 22.2 kW
AC 3.20

Option (A) is correct. By small signal circuit analysis (1 + b) (ro RE ) Ri Av = vo = vs rp + (1 + b) (ro RE ) b Ri + Rs l (101) (100 2) = : b 22.2 l = 0.962 22.2 + 0.5 3.28 + (101) (100 2)

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AC 3

BJT Amplifiers

AC 93

AC 3.21

Option (A) is correct. DC Analysis : VTH = 50 (12) = 10 V 10 + 50

RTH = 11 50 = 8.33 kW IBQ = 12 - 0.7 - 10 = 11.9 mA 8.33k + (101) 1k ICQ = bIBQ = 1.19 mA, IEQ = 1.2 mA VBCQ = 12 - (1.20) 1 - (1.19) 2 = 8.42 V AC Analysis :

(100) (0.0259) bV rp = t = = 2.18 kW 1.19m ICQ

vo = bIb (2k), vs =- (b + 1) Ib (1k) + Ib (rp)

AC 3.22

Option (B) is correct.

VECQ = 8.42 V, For 1 # vEC # 11 V, 3 vEC = 11 - 8.42 = 2.58 V & Output voltage swing = 5.16 V peak to peak.

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- (100) (2k) - b (2k) =- 1.96 = Av = vo = vs rp + (b + 1) 1k 2.18k + (100) (1k)

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AC 3.23

Option (B) is correct. If VA = 3, small signal voltage gain is brp Av =- gm a rp k . _RC RL i =. (RC RL) rp + Rs rp + Rs RC = 3.71 kW , Rs = 2 kW , RL = 10 kW rp = bVT ICQ

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AC 94

BJT Amplifiers

AC 3

9 - 11 (b + 1) IBQ - 0.7 - 2IBQ = 0 8.3 - (11 # 81) IBQ - 2IBQ = 0 893IBQ = 8.3 & IBQ = 0.00929 mA ICQ = bIBQ = 0.743 mA So, rp = 80 # 0.026 = 2.79 kW 0.743 b 80 Av =(R R ) =(3.71 10) rp + Rs C L (2.79 + 2) =- 80 # 2.85 =- 47.4 4.79

AC 3.24

Option (B) is correct. DC values in the circuit IEQ = 0.80 mA, So, IBQ = IEQ = 0.80 = 0.0121 mA (b + 1) (65 + 1) b ICQ = I = 65 (0.80) = 0.788 mA b + 1 E 66 65 (0.026) bV rp = T = = 2.14 kW 0.788 ICQ ro = VA = 75 = 95.2 kW 0.788 ICQ

AC 3.25

Option (C) is correct. By small signal ac analysis of the amplifier circuit (short all the capacitors)

w
Output current a v p =- vs So,
AC 3.26

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(ro 2.54 kW) (ro 2.54 kW) + 4 kW gm (ro 2.54 kW) Gs = io =vs (ro 2.54 kW) + 4 kW 0 . 788 gm = = 30.3 mA/V 0.026 io =- gm v p (95.2 2.54) Gs = io =- (30.3) =- 11.6 mA/V vs 95.2 2.54 + 4

Option (C) is correct. Input impedance through base is given as

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AC 3

BJT Amplifiers

AC 95

Rb = rp = gm = IC VT So, By DC analysis Rb = rp =

b gm

bVT IC

IE = 10 mA, IC = aIE a = b = 0.955 b+1 (200) (25 mV) = 502 W (9.95 mA)

IC = (0.995)(10 mA) = 9.95 mA So,


AC 3.27

Rb = rp =

Option (B) is correct. Since the B-C junction is not reverse biased, the transistor continues to operate in the forward-active-mode

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AC 3.28

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r = vce = 1 , So rp b 1 l ro gm vce gm gm (100) (0.0259) rp = = 2.33 kW 2m I gm = CQ = 2m = 77.2 mA/V 0.0259 Vt 1 = 12.95 , r = VA = 150 = 75 kW o gm 2m ICQ re = (2.33k) 12.95 (75k) = 12.87 W

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Option (C) is correct. ro = VA ICQ ICQ = VA = 75 = 0.375 mA ro 200k

&
AC 3.29

Option (B) is correct. The circuit is as shown below

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AC 96

BJT Amplifiers

AC 3

rp =

bVt 75 (0.0259) = = 1.94 kW 1m ICQ

vi = Ib (rp + 1.5k), Iin = Ie (b + 1) Ib (r + 1.5k) Rin = Vi = p Ie (b + 1) = 1.94 + 1.5k = 45 W 76


AC 3.30

Option (D) is correct. By DC analysis of the circuit

IEQ = 10 - 0.7 = 0.93 mA (10k) b ICQ = c I = 100 0.93 = 0.921 mA b + 1 m EQ 101 # (100) (0.026) bV rp = T = = 2.82 kW 0.921 ICQ I gm = CQ = 0.921 = 35.42 mA/V 0.026 VT By small signal ac analysis of the circuit

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io = gm v p Apply KCL at emitter i1 = v p + v s + g m v p rp RE i1 = v s + g m v s = v s e 1 + g m o RE rp RE rp Current gain gm (RE rp) g m vs Ai = io = = i1 1 + gm (RE rp) vs e 1 + g m o RE rp = (35.42) (10 kW 2.82 kW) = 0.98 1 + (35.42) (10 kW 2.82 kW)

(a v p = vs)

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AC 3

BJT Amplifiers

AC 97

AC 3.31

Option (A) is correct. From small signal ac-equivalent circuit vC = gm v p RC = gm vs RC Av = vo = gm RC vs = (35.42 mA/ V) (5 kW ) = 177.1 {a v p = vs)

AC 3.32

Option (D) is correct. The equal circuit is shown below

Removing the RL - v p =

vi rp 270 + rp

vTH =- ro gm v p - v p = rp = vTH

AC 3.33

Option (A) is correct. The equivalent small-signal circuit is shown below

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b = 100 = 50 kW gm 2m v 50k (1 + (2 m) (250k)) = i = 498vi 270 + 50k

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vi rp (1 + gm ro) 270 + rp

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Isc = gm v p + v p = 2mv p + v p = 2.004mv p ro 250k v p + v p + g v + vi + v pi = 0 m p rp ro 270 v p + v p + 2mv + vi + v pi = 0 p 270 50k 250k & v p =- 0.647vi , Isc = 1.297 mvi RTH = vTH = 498vi = 384 kW 1.297mvi Isc

AC 3.34

Option (B) is correct. The equivalent small-signal circuit is shown below

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AC 98

BJT Amplifiers

AC 3

b = 100 = 3.33 kW gm 3 m , i = v p + gm v p , h21 = i2 i1 v = 0 2 ro i1 =- v p - v p - v p - gm v p , 3.9k rp ro rp =


2

v p can be neglected ro h21 = i2 = i1


AC 3.35

- gm - gm rp 3.9k = = 0.91 1 + 1 +g rp + 3.9k + gm rp 3.9k m 3.9k rp

Option (A) is correct. v1 =- v p , v1 + v1 + v1 - v 2 = g v m p ro 3.9k rp v1 b 1 + 1 + 1 l - v2 =- gm v1 ro 3.9k rp ro

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AC 3.36

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v1 = v2

1 ro 1 + 1 + 1 +g m 3.9k rp ro 1 k 800 = = 3.8 # 10-4 1 + 1 + 1 + 3m 3.9k 33.3k 800k

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Option (A) is correct. By small signal equivalent circuit analysis,

In the circuit gm1 v p1 + vo = gm 2 v p 2 rp 2 So, v p1 = vin , vo =- v p gm1 # vin + vo =- gm 2 vo rp 2


2

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AC 3

BJT Amplifiers

AC 99

Voltage gain

gm1 vin =-bgm 2 + 1 l vo rp2 g r Av = vo = m1 # p2 vin 1 + gm 2 rp2

AC 3.37

Option (C) is correct. Small signal equivalent circuit of the Darlington-pair

So,

Put v p1

v p1 gm1 v p1 v p2 io and v p2 from io io io i1 io i1

= i 1 rp1 = gm1 rp1 i1 = b1 i1 ...(i) = (i 1 + gm1 v p1) rp2 = (i1 + bi i1) rp2 = gm1 v p1 + gm 2 v p2 eq (i) and (ii) = gm1 rp1 i1 + gm 2 (i1 + b1 i1) rp2 = b1 i + gm 2 (i 1 + b1 i 1) rp2 = b1 + gm 2 rp2 + gm 2 rp2 b1 = b1 + b 2 + b1 b 2

So,
AC 3.38

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(b1 = gm1 rp1) ...(ii)

Ai = io = b1 + b 2 + b1 b 2 i1

Option (B) is correct. From equivalent circuit vs = v p1 + v p2 = i 1 rp1 + i 1 (1 + b1) rp2 Rin = vs = rp1 + (1 + b1) rp2 i1

AC 3.39

Option (B) is correct. The small signal equivalent circuit of given amplifier is shown below. Here the feedback circuit samples the output voltage and produces a feed back current Ifb which is in shunt with input signal. So this is a shunt-shunt feedback configuration.

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AC 100

BJT Amplifiers

AC 3

AC 3.40

Option (D) is correct. The small signal ac equivalent circuit of given amplifier is as following.

Here

Input resistance
AC 3.41

RB = (10 kW < 10 kW) = 5 kW gm = 10 ms 50 a gm rp = b & rp = = 5 kW 10 # 10 - 3 Rin = RB < rp = 5 kW < 5 kW = 2.5 kW

Option (C) is correct. By small signal ac analysis of the circuit

a So,

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vo = v p2 , gm1 v p1 = v p2 rp2

v p1 = vin gm1 vin = v p2 & v p2 = (gm1 rp2) vin rp2 vo = (gm1 rp2) vin Av = vo = gm1 rp 2 vin

AC 3.42

Option (B) is correct. Equivalent hybrid circuit of given transistor amplifier when RE is by passed is shown below.

In the circuit ib = vs hie ...(1)

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AC 3

BJT Amplifiers

AC 101

vo = hfe ib .RC = hfe . vs .RC hie h R Voltage gain Av = vo = fe C vi hie Equivalent hybrid circuit when RE is not bypassed by the capacitor.
1

In the circuit vs = ib hie + (ib + hfe ib) RE vs = ib [hie + (1 + hfe) RE ] v0 = hfe ib .RC from equation (2) and (3) v0 = hfe .RC ...(2) ...(3)

Voltage gain, So

vs hie + (1 + hfe) RE hfe RC Av2 = v0 = vs hie + (1 + hfe) RE Av1 = hie + (1 + hfe) RE = 1 + (1 + hfe) RE hie hie Av2 Av < Av
2

AC 3.43

Option (C) is correct. Small signal circuit is (mid-band frequency range)

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CE " 0 , for mid-band frequencies vo =- gm vp RC In the input loop vi rp RB + rp - gm RC rp vi vo = RB + rp - gm rp RC Av = vo = vi RB + rp vp = (1 mA) gm = IC = = 1 A/V VT (26 mV) 26 b gm rp = b0 & rp = 0 = 200 # 26 = 5.2 kX gm

So, Gain Trans-conductance

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AC 102

BJT Amplifiers

AC 3

So gain
AC 3.44

Av =

- 200 # (1 kW) =- 6.62 (25 kW + 5.2 kW)

Option (B) is correct. Cut off frequency due to CE is obtained as

f0 =

1 2pReq CE

Req " Equivalent resistance seen through capacitor CE

Req = RE < RB + rp = So So,

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CE =

RE (RB + rp) RE + RB + rp 1 (RE + RB + rp) f0 = = 10 Hz (given) 2pRE (RB + rp) CE (0.1 + 25 + 5.2) # 103 = 1.59 mF 2p # 0.1 (25 + 5.2) # 106

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