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Ion Trapping and Quantum Computation

This document summarizes lectures on quantum information processing using trapped ions. Lecture 1 discusses the basics of ion trapping and how ions can encode qubits in their internal states. Two-photon stimulated Raman transitions are used to manipulate the qubits while avoiding spontaneous emission. Lecture 2 covers trapped ion quantum computation, including gate operations and scaling. Lecture 3 discusses sources of decoherence for ion trap qubits, including technical noise, spontaneous emission, and how decoherence limits increase with system size.

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Uttam K Paudel
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0% found this document useful (0 votes)
16 views27 pages

Ion Trapping and Quantum Computation

This document summarizes lectures on quantum information processing using trapped ions. Lecture 1 discusses the basics of ion trapping and how ions can encode qubits in their internal states. Two-photon stimulated Raman transitions are used to manipulate the qubits while avoiding spontaneous emission. Lecture 2 covers trapped ion quantum computation, including gate operations and scaling. Lecture 3 discusses sources of decoherence for ion trap qubits, including technical noise, spontaneous emission, and how decoherence limits increase with system size.

Uploaded by

Uttam K Paudel
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© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Quantum information processing in ion traps II

D. J. Wineland, NIST, Boulder

Part I, Rainer Blatt

Lecture 1: Nuts and bolts Ion trapology Qubits based on ground-state hyperfine levels Two-photon stimulated-Raman transitions * Rabi rates, Stark shifts, spontaneous emission Lecture 2: Quantum computation (QC) and quantum-limited measurement Trapped-ion QC and DiVincenzos criteria Gates Scaling Entanglement-enhanced quantum measurement Lecture 3: Decoherence Memory decoherence Decoherence during operations * technical fluctuations * spontaneous emission * scaling Decoherence and the measurement problem

Ion trapping 101


Earnshaws theorem: In a charge free region, cannot confine a charged particle with static electric fields. Proof: For confinement, must have (2(q)/2xi)trap location < 0 (xi {x,y,z}) But from Laplaces equation: 2 = 0, cannot satisfy confinement condition for all xi. B0

Solution 1: Penning trap: q U0 [2z2 x2 y2] Difficult to accomplish individual ion addressing.
(However, see: Ciaramicoli, Marzoli, Tombesi, PRL 91, 017901 (2003))

U0

Solution 2: RF-Paul trap: = (x2 + y2 + z2)V0cost + U0(x2 + y2 + z2) [ + + = + + = 0] (Laplace)

Special case: linear RF trap


(quadrupole mass filter plugged on-axis With static fields)

~2R

V0 cos Tt Uo Uc
y
x

axis trap z

end view

(Get s and numerically)

Equations of motion (classical treatment adequate)

Mathieu equation (2)

z-motion, qz = 0 (static harmonic well)

x,y motion, Mathieu equation:

plug into (2), find (recursion relation for) C2n

Solution in ith direction (i {x,y}):

1.0 .8 .6 .4 .2 ai 0 -.2 -.4 -.6

static potential strength

unstable

stable

unstable

.2

.4

.6

.8

1.0

pseudo-potential strength

|qi|

Simultaneous solution for x, y, z:

ai Ui,

ax + ay + az =0

1.0 .8 .6 .4 .2 ax 0 -.2 -.4 -.6 -.8 -1.0 -1.2 0

x = T/2 y 0 stable

az

x 0 y = T/2

-1.0 -.8 -.6 -.4 -.2 0 ay .2 .4 .6 .8 1.0

.2

.4

.6

.8

1.0

|q |

0.05 typically, we live here |ai| , qi2 << 1

ax

ay

-0.05

0.1

qi

0.2

secular motion

micromotion

Heuristic approach: pseudo-potential approximation

assume mean ion position changes negligibly in duration 2/T

pseudo-potential from micromotion kinetic energy: agrees with Mathieu equation limit |ai| , qi2 << 1

for linear RF trap,

Digression: Optical dipole traps:

atomic core

L 0

Response of atomic core to laser field is negligible because of heavy mass. For L >> 0 (blue detuning) electron response out of phase with electric force. Electron trapped in ponderomotive (pseudo-potential) laser potential (just like RF trap). Trapping in field minima. Core is attached to electron Dispersion: For L << 0 (red detuning) electron response in phase with electric force. Trapping in field maxima.

outer electron

(some) ion-trap realities

Patch potentials: Static potentials: pushes ions away from trap axis micromotion xsinTt can cause X-tal heating Fluctuating patch fields: causes heating; COM primarily affected Source: unknown! (mobile electrons on oxide layers,.. ??)

axis trap z

EDC

Idealized trap:
control electrodes

RF electrodes

Approximation:
3 1 2 4

200 m

IONS

3' 4' 2' 1'

gold-coated alumina wafers

linear Paul (RF) trap VRF ~ 500 V RF ~ 50 250 MHz

Chris Myatt et al.

0.2 mm

~ 1 cm

For 9Be+, V0 = 500 V, T/2 = 200 MHz, R = 200 m x,y/2 ~ 6 MHz

0.2 mm

Ion Trap QC: Proposal: J. I. Cirac and P. Zoller,


PRL 74, 4091 (1995)

Motion data bus


(e.g., center-of-mass mode)

Laser beam

n=3 n=2 n=1 n=0

Internal-state qubit

Stay in two lowest motional states (motion qubit)

n'

ladder states for selected motional mode


n

2 1 0

single photon need good laser frequency stability memory and gate coherence limited by upper state lifetime (~ seconds)

0 = optical frequency:

0 = RF/microwave frequency

memory coherence limited by upper-state lifetime (>> days) sideband transitions weak at RF 2-photon optical stimulated-Raman transitions frequency stability = RF modulator stability vary sideband coupling (Lamb-Dicke parameter) with k2 k1 gate decoherence: spontaneous-Raman scattering (fundamental limit)

E - E =0

Stimulated-Raman transitions: Simple case: Motion: 1-D harmonic well (frequency M), Internal states: 3-level system

electric dipole transitions

r = red
,1 ,0

G kr , r
G kb , b

e,1 e,0

b = blue

e
e >> >> 0 >> M

0 M

,2 ,1 ,0

r = red
,1 ,0

G kr , r
G kb , b

e,1 e,0

b = blue

0 M

,2 ,1 ,0

zero-point wavefunction spread

(+ rotating wave approximation)

similarly:

Adiabatic elimination:

make ansatz:

r = red
,1 ,0

G kr , r
G kb , b

e,1 e,0

b = blue

0 M

,2 ,1 ,0

Stark shift of from blue laser

Add in other Stark shifts

absorb Stark shifts into wave function amplitudes

near a resonance:

Rabi flopping

(Lamb-Dicke parameter) Be+: P = 1 mW, w0 = 25 m, /2 = 100 GHz, /2 ~ 0.5 MHz

Carrier transitions:

Debye-Waller factor Sideband transitions: n = n 1 (n> = larger of n and n) red sideband (n = n-1): can get from Jaynes-Cummings Hamiltonian from cavity-QED
(see, e.g., Raimond, Brune, Haroche, Rev. Mod. Phys. 73, 565 (01))

Complete picture:
Sum over excited states, typically:

2P 3/2 2P 1/2

2S 1/2

can tune out differential Stark shifts can tune out polarization sensitivity For N ions, consider effects of 3N modes Debye-Waller factors from spectator modes

sideband transitions: interference from two-mode transitions: e.g. np -mr = M

Spontaneous emission:

r = red
,1 ,0

G kr , r

e
b = blue

e,1 e,0

G kb , b

0 M

,2 ,1 ,0

Quantum information processing in ion traps II


D. J. Wineland, NIST, Boulder Lecture 1: Nuts and bolts Ion trapology Qubits based on ground-state hyperfine levels Two-photon stimulated-Raman transitions * Rabi rates, Stark shifts, spontaneous emission Lecture 2: Quantum computation (QC) and quantum-limited measurement Trapped-ion QC and DiVincenzos criteria Gates Scaling Entanglement-enhanced quantum measurement Lecture 3: Decoherence Memory decoherence Decoherence during operations * technical fluctuations * spontaneous emission * scaling Decoherence and the measurement problem

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