Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 4
4.1 (b)
  Eg
n i2  N c N  exp

 
n i2  5  1012  2.5 10
2 25


 kT    1.12 300 
3

 2.912 10 
 T  38
 exp 
 T 
 N cO N O 
3
  Eg
 exp

  300  0.0259T  
 300   By trial and error, T  417.5 K
 kT 
_______________________________________
where N cO and N O are the values at 300 K.
4.4
 200 
(a) Silicon At T  200 K, kT  0.0259 
T (K) kT (eV) n i (cm 3 )  300 
 0.017267 eV
200 0.01727 7.68  10 4
 400 
400 0.03453 2.38  10 12 At T  400 K, kT  0.0259 
 300 
600 0.0518 9.74  10 14
 0.034533 eV
(b) Germanium (c) GaAs ni2 400

7.70 10  10 2
 3.025  1017
T (K) n i (cm 3 ) n i (cm 3 ) n 2
i 200 1.40 10  2 2

200 2.16 10 10

1.38  400 
3
  Eg 
  exp  
400 8.60  10 14
3.28 10 9
 300   0.034533 
 
600 3.82  10 16
5.72  10 12  200 
3
  Eg 
  exp  
_______________________________________  300   0.017267 
 Eg Eg 
4.2  8 exp   
Plot  0.017267 0.034533 
_______________________________________ 
3.025  10 17  8 exp E g 57.9139  28.9578 
or
4.3
 3.025  1017 
  Eg  E g 28.9561  ln   38.1714

(a) n  N c N  exp
2
i

  8 
 kT  or E g  1.318 eV
3

5 10   2.8 10 1.04 10  300

11 2 19 T 

19

Now
 
3

 exp 
 1.12 
 7.70 10  10 2  400 
 N co N o  
 0.0259T 300   300 
3   1.318 
 2.912  10 
 T   exp 
2.5 10 23 38
  0.034533 
300  
  1.12300  5.929 10 21  N co N o 2.370 2.658 10 17  
 exp  
 0.0259T  
6
so N co N o  9.41 10 cm 37

By trial and error, T  367.5 K _______________________________________

 Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.5 (b)
  1.10    E F  E  
exp  g  1  f F   E  E exp  
ni B   kT    0.20   kT 
  exp 
n i  A   0.90   kT     E  E  
exp   E  E exp 
root korte hobe  kT  kT 
 
For T  200 K, kT  0.017267 eV    E F  E  
For T  300 K, kT  0.0259 eV  exp  
 kT 
For T  400 K, kT  0.034533 eV
Let E  E  x
(a) For T  200 K, x
Then g  1  f F   x exp 
n i B    0.20  6  kT 
 exp   9.325  10
n i  A  0. 017267  To find the maximum value
(b) For T  300 K, d g  1  f F  d    x 
  x exp   0
n i B    0.20  4 dx dx   kT 
 exp   4.43 10
n i  A  0.0259  Same as part (a). Maximum occurs at
(c) For T  400 K, kT
x
n i B    0.20  3 2
 exp   3.05  10
n i  A  0.034533  or
_______________________________________ kT
E  E 
2
4.6 _______________________________________
  E  E F  
(a) g c f F  E  E c exp   4.7
 kT     E1  E c  
  E  E c   n E 1 
E1  E c exp 
kT 
 E  E c exp    
kT 
  n E 2    E 2  E c  
  E c  E F   E 2  E c exp  
 exp   kT 
kT 
  where
Let E  E c  x kT
E1  E c  4kT and E 2  E c 
x 2
Then g c f F  x exp  Then
 kT 
To find the maximum value: n E 1  4kT    E1  E 2  
 exp  
d  g c f F  1 1 / 2 x n E 2  kT  kT 
 x exp 
dx 2  kT  2
x   1 

1 1/ 2
 x exp 0  2 2 exp   4    2 2 exp 3.5
kT  kT    2 
which yields or
1 x1/ 2 kT n E 1 
 x  0.0854
2x 1/ 2
kT 2 n E 2 
The maximum value occurs at _______________________________________
kT
E  Ec  4.8
2
Plot
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.9 4.13
Plot Let g c E   K  constant
_______________________________________ Then

4.10 no  g c E  f F E dE
3  m *p  Ec
E Fi  E midgap  kT ln * 
4  mn  
1
 
Silicon: m  0.56m o , m  1.08m o
* *
K  
E c 1  exp
E  EF 
dE
p n
 kT 
E Fi  E midgap  0.0128 eV  
  E  E F  

Germanium: m *p  0.37 m o , m n*  0.55m o
E Fi  E midgap  0.0077 eV
 K exp 
Ec  kT dE

Let
Gallium Arsenide: m *p  0.48m o ,
E  Ec
m n*  0.067m o  so that dE  kT  d
kT
E Fi  E midgap  0.0382 eV We can write
_______________________________________ E  E F  E c  E F   E  E c 
so that
4.11   E  E F     E c  E F  
1 N  exp    exp    exp  
E Fi  E midgap  kT  ln  

 kT   kT 
2  Nc  The integral can then be written as
  E c  E F  

 
kT  ln 1.04 1019
19
1
  0.4952kT   exp  d

2  2.8 10


n o  K  kT  exp 
 kT 0

which becomes
T (K) kT (eV) ( E Fi  E midgap )(eV)   E c  E F  
n o  K  kT  exp  
200 0.01727  0.0086  kT 
400 0.03453  0.0171 _______________________________________
600 0.0518  0.0257
4.14
Let g c E   C1 E  E c  for E  E c
_______________________________________
Then

4.12
no  g c E  f F E dE
3  m *p 
(a) E Fi  E midgap  kT ln *  Ec
4  mn 
  
E  E c 
3
 0.0259 ln
 0.70 
 C1   E  EF 
dE
 Ec 1  exp 
4  1.21   kT 
 10.63 meV
 E  E F  


3  0.75   C1  E  E  exp  dE
(b) E Fi  E midgap  0.0259 ln
C
 Ec  kT 
4  0.080 
Let
 43.47 meV
_______________________________________ E  Ec
 so that dE  kT  d
kT
We can write
E  E F  E  E c   E c  E F 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then The ionization energy is

  E c  E F    m*  o 
2
0.067
n o  C1 exp   E     13.6   13.6
 kT     13.12
 mo  s 
 E  E c  


 exp 
or
  E  E
Ec
c
 kT  dE

E  0.0053 eV
_______________________________________
or
  E c  E F   4.17
n o  C1 exp  
 kT  N 
(a) E c  E F  kT ln c 

 no


  kT  exp kT d  2.8  10 19 
0  0.0259 ln 

 7  10
15
We find that 

  0.2148 eV
  exp  d  exp     1  1 (b) E F  E  E g  E c  E F 
0
0
So  1.12  0.2148  0.90518 eV
  E c  E F     E F  E   
n o  C1 kT  exp  (c) p o  N  exp 
2
 kT 
 kT   
_______________________________________

 1.04 1019 exp  
  0.90518 

 0.0259 
4.15
 6.90 10 3 cm 3
r m 
We have 1 r  o*  (d) Holes
ao m  n 
For germanium, r  16 , m *  0.55m o (e) E F  E Fi  kT ln o 
 ni 
Then
 7 10 15 
 1   0.0259 ln 
r1  16 a o  290.53 10 
 1.5  10 
 0.55 
or  0.338 eV
o _______________________________________
r1  15.4 A
The ionization energy can be written as 4.18
 m *  o 
2 N 
E     13.6 eV (a) E F  E  kT ln  

   po 
 m o  s 
 1.04 10 19 

0.55
13.6  E  0.029 eV  0.0259  ln 

162  2  10
16

_______________________________________  0.162 eV
(b) E c  E F  E g  E F  E 
4.16  1.12  0.162  0.958 eV
r m 
We have 1 r  o* 
ao m 

(c) n o  2.8 1019 exp 
  0.958 

 0.0259 
For gallium arsenide, r  13.1 ,
 2.41 10 3 cm 3
m  0.067m o
*

Then
 1  o
r1  13.1 0.53  104 A
 0.067 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

p  4.21
(d) E Fi  E F  kT ln o   375 
 ni  (a) kT  0.0259   0.032375 eV
 300 
 2  10 16 
 0.0259 ln  3/2
10 
 1.5  10  
n o  2.8 10 19  
 375 

  0.28 
exp  
 0.365 eV  300   0.032375 
_______________________________________  6.86 10 15 cm 3
E F  E  E g  E c  E F   1.12  0.28
4.19
 0.840 eV
N 
(a) E c  E F  kT ln c  3/ 2

 no

 
p o  1.04  10 19  
 375 

  0.840 
exp  
 300   0.032375 
 2.8  10 19 
 0.0259 ln 

 7.84 10 7 cm 3
 2  10
5
 N 
 0.8436 eV (b) E c  E F  kT ln c 

E F  E  E g   E c  E F   no 
 2.8  1019 
 1.12  0.8436  0.0259  ln 
15 
E F  E  0.2764 eV  6.862  10 
 0.2153 eV
   0.27637 
(b) p o  1.04  1019 exp  E F  E  1.12  0.2153  0.9047 eV
 0.0259 
 2.414  1014 cm 3 
p o  1.04  1019 exp  
  0.904668 

(c) p-type  0.0259 
_______________________________________  7.04 10 3 cm 3
_______________________________________
4.20
 375  4.22
(a) kT  0.0259   0.032375 eV
 300  (a) p-type
3/ 2 Eg 1.12
(b) E F  E    0.28 eV

n o  4.7  10 17
  375 
 
  0.28 
exp   4 4
 300   0.032375 
  E F  E   
 1.15  1014 cm 3 p o  N  exp  
 kT 
E F  E  E g  E c  E F   1.42  0.28
 1.14 eV 
 1.04 1019 exp  
  0.28 

3/ 2  0.0259 
  375 
p o  7  10 18      1.14 
exp    2.10  10 14 cm 3
 300   0.032375  E c  E F  E g   E F  E 
 4.99 10 3 cm 3  1.12  0.28  0.84 eV
 4.7 10 17 
(b) E c  E F  0.0259 ln    E c  E F  
14  n o  N c exp  
 1.15  10   kT 
 0.2154 eV
E F  E  E g  E c  E F   1.42  0.2154 
 2.8  1019 exp 
  0.84 

 0.0259 
 1.2046 eV
 2.30 10 5 cm 3

p o  7  1018    1.2046 
exp  
_______________________________________
 0.0259 
 4.42  10 2 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.23 4.25
 E  E Fi   400 
(a) n o  ni exp  F  kT  0.0259   0.034533 eV
 kT   300 

  0.22  3/ 2
 1.5  1010 exp  
 0.0259 

N   1.04 10 19  
 400 

 300 
 7.33  1013 cm 3  1.601 10 19 cm 3
 E  EF  3/ 2
p o  ni exp  Fi
 kT



N c  2.8  10 19  
 400 

 300 
    0.22 
 1.5  1010 exp  
 4.3109 10 19 cm 3
 0.0259 
3
 
n i2  4.3109 10 19 1.601 10 19 
 3.07 10 cm
6
  1.12 
 E  E Fi   exp  
(b) n o  ni exp  F   0.034533 
 kT 
 5.6702  10 24
 
 .22 
 1.8 10 6 exp 
0
  n i  2.381 10 12 cm 3
 0.0259 
N 
 8.80  10 9 cm 3 (a) E F  E  kT ln  

 po 
 E  EF 
p o  ni exp  Fi   1.601 1019 
 kT   0.034533 ln 

 5  10
15

 
 1.8 10 6 exp 
  0.22 
  0.2787 eV
 0.0259 
(b) E c  E F  1.12  0.27873  0.84127 eV
 3.68  10 2 cm 3
_______________________________________ 
(c) n o  4.3109  1019 exp  
  0.84127 

 0.034533 
4.24  1.134 10 9 cm 3
N  (d) Holes
(a) E F  E  kT ln  

 po  p 
(e) E Fi  E F  kT ln o 
 1.04 10 19   ni 
 0.0259  ln 

 5  10
15
  5  10 15 
 0.034533 ln 
12 
 0.1979 eV  2.38110 
(b) E c  E F  E g  E F  E   0.2642 eV
 1.12  0.19788  0.92212 eV _______________________________________

 
(c) n o  2.8 1019 exp 
  0.92212 
 4.26
 0.0259 
 9.66  10 3 cm 3 (a)     0.25 
p o  7  1018 exp  
 0.0259 
(d) Holes
p   4.50  10 14 cm 3
(e) E Fi  E F  kT ln o 
 E c  E F  1.42  0.25  1.17 eV
 ni 
 5 10 15  
n o  4.7  1017 exp  
  1.17 

 0.0259 ln 
10 
 0.0259 
 1.5  10 
 1.13  10 2 cm 3
 0.3294 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) kT  0.034533 eV
3/ 2 
n o  4.3111019 exp  
  0.77175 


N   7 10 18

 400 
 
 0.034533 
 300   8.49  10 9 cm 3
 1.078 10 19 cm 3 _______________________________________
3/2


N c  4.7  10 17
 400 
  4.28
 300  2
3
(a) n o  N c F1 / 2  F 
 7.236  10 cm 17

N  For E F  E c  kT 2 ,
E F  E  kT ln  

 po  E F  E c kT 2
F    0.5
 1.078 10 19  kT kT
 0.034533 ln 
 Then F1 / 2  F   1.0
 4.50  10
14

 0.3482 eV no 
2
2.8 10 1.0
19

E c  E F  1.42  0.3482  1.072 eV 

 3.16  10 19 cm 3
   1.07177 
n o  7.236  1017 exp    2
 0.034533  (b) n o  N c F1 / 2  F 

 2.40 10 4 cm 3
_____________________________________ 
2
4.7 10 1.0
17


4.27  5.30  10 17 cm 3
(a) 
p o  1.04  10 19
   0.25 
exp  
_______________________________________
 0.0259 
4.29
 6.68  10 14 cm 3
2
E c  E F  1.12  0.25  0.870 eV po  N  F1 / 2  F 

   0.870 
n o  2.8 1019 exp    5 10 19 
2
1.04 10 F   
19
 0.0259  1/ 2 F

n o  7.23  10 4 cm 3
So F1 / 2  F   4.26
(b) kT  0.034533 eV
E  E F
3/ 2 We find  F  3.0 

N   1.04 10 19

 400 
  kT
 300  E  E F  3.0 0.0259  0.0777 eV
 1.601 10 19 cm 3 _______________________________________
3/ 2


N c  2.8  10 19

 400 
  4.30
 300  E F  E c 4kT
(a)  F   4
 4.311 10 19 cm 3 kT kT
N  Then F1 / 2  F   6.0
E F  E  kT ln  
 po  2
no  N c F1 / 2  F 
 1.601 10 19
 
 0.034533 ln 

 6.68 10 2
2.8 10 6.0
14
  19

 0.3482 eV 
E c  E F  1.12  0.3482  0.7718 eV  1.90  10 20 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) n o 
2
4.7 10 6.0 17
p E  

4 2m *p  3/ 2
   E F  E  
exp 
 3
kT 
h  
 3.18  1018 cm 3
E  E    E  E  
_______________________________________  kT exp  
kT  kT 
4.31 Define
For the electron concentration E  E
n E   g c E  f F E  x 
kT
The Boltzmann approximation applies, so Then

n E  

4 2m n* 
3/ 2

E  Ec
px   K  x  exp x 
h 3
To find maximum value of pE   p x  , set
  E  E F   dp x 
 exp    0 Using the results from above,
 kT  dx 
or we find the maximum at

n E  

4 2m n* 
3/ 2
  E c  E F  
exp  E  E  kT
1
3
kT  2
h   _______________________________________
E  Ec   E  E c  
 kT exp   4.32
kT  kT 
(a) Silicon: We have
Define
E  Ec   E c  E F  
x n o  N c exp  
 kT 
kT
Then We can write
E c  E F  E c  E d   E d  E F 
nE   nx   K x exp x 
For
To find maximum nE   n x  , set
E c  E d  0.045 eV and E d  E F  3kT eV
dn x  1
 0  K  x 1 / 2 exp x  we can write
dx 2
 
n o  2.8 1019 exp 
  0.045 
 3
 x 1 / 2  1 exp x   0.0259 

 2.8 10  exp 4.737 
19
or
or
1 
0  Kx 1 / 2 exp x   x  n o  2.45  10 17 cm 3
2 
We also have
which yields
  E F  E   
1 E  Ec 1 p o  N  exp  
x   E  E c  kT  kT 
2 kT 2
For the hole concentration Again, we can write
pE   g  E 1  f F E  E F  E   E F  E a    E a  E 
Using the Boltzmann approximation For
E F  E a  3kT and E a  E  0.045 eV
p E  

4 2m *p  3/ 2

E  E Then
h3
  E F  E     
p o  1.04  1019 exp  3 
0.045 
0.0259 
 exp   
 1.04 10  exp 4.737 
 kT  19
or
or
p o  9.12  10 16 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) GaAs: assume E c  E d  0.0058 eV 2

 10 14 
Then no 
10 14
2
 
2
  1.722 10 13
  
2

 
    0.0058 
n o  4.7  1017 exp   3
 1.029 10 14 cm 3
 0.0259 
 4.7  10  exp 3.224
17
po 
1.722 10  13 2
 2.88  1012 cm 3
or 1.029  1014
n o  1.87  1016 cm 3 _______________________________________
Assume E a  E  0.0345 eV 4.35
Then (a) p o  N a  N d  4  1015  10 15
    0.0345 
p o  7  1018 exp   3  3 1015 cm 3
 0.0259 
 7 10  exp 4.332
18
no 
n i2


1.8  10 6 2

 1.08  10  3 cm 3
po 3  1015
or
p o  9.20  10 16 cm 3 (b) n o  N d  3 10 16 cm 3
_______________________________________
po 
1.8 10  6 2
 1.08 10  4 cm 3
3  1016
4.33
(c) n o  p o  n i  1.8  10 6 cm 3
Plot
3
_______________________________________
   375 
(d) n i2  4.7  1017 7.0  10 18   
 300 
4.34
(a) p o  4 15  10 15  3 10 15 cm 3   1.42300  
 exp  
 0.0259375 
no 
1.5 10  10 2
 7.5  10 4 cm 3  ni  7.580  10 8 cm 3
3  1015
(b) n o  N d  3 10 16 cm 3 p o  N a  410 15 cm 3

1.5 10  10 2
3 no 
7.580 10  8 2
 1.44  10 2 cm 3
po   7.5 10 cm3
4 1015
3  10 16
3
(c) n o  p o  n i  1.5  1010 cm 3    450 
(e) n i2  4.7  1017 7.0  10 18   
3  300 
   375 
(d) n i2  2.8 10 19 1.04  10 19      1.42300  
 300   exp  
  1.12300    0.0259450 
 exp    n i  3.853  10 10 cm 3
 0.0259375 
 n i  7.334  10 11 cm 3 n o  N d  10 14 cm 3

p o  N a  410 15 cm 3 po 
3.853 10  10 2
 1.48  10 7 cm 3
7.334 10 
14
11 2 10
no   1.34  10 8 cm 3 _______________________________________
4  1015
3
4.36
 2.8  10 1.04  10 
2 19  450 
19
(e) n i  (a) Ge: n i  2.4 10 13 cm 3
300  
  1.12300   Nd N 
2
 exp   (i) n o    d   n i2
 0.0259450  2  2 
 n i  1.722 10 13 cm 3 2
 2 10 15 

2  10 15
2
  
  2.4  1013
 
2

 2 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

or Then
n o  N d  2 10 15 cm 3 1
f F E  

po 
n i2


2.4  10 
13 2 
1  exp1 
0.245 

no 2 10 15  0.0259 
or
 2.88 10 11 cm 3
f F E   2.87  10 5
(ii) p o  N a  N d  10 16  7 10 15 _______________________________________
 3 1015 cm 3
n2
no  i 
2.4 10 13  2 4.38
(a) N a  N d  p-type
po 3 10 15
(b) Silicon:
 1.92  1011 cm 3 p o  N a  N d  2.5  1013  1 10 13
(b) GaAs: n i  1.8  10 6 cm 3 or
(i) n o  N d  2 10 15 cm p o  1.5  1013 cm 3
1.8 10 6 2 Then
po 
2  1015
 1.62  10 3 cm 3 ni2
no  

1.5 10 10  2

 1.5  10 7 cm 3
(ii) p o  N a  N d  310 15 cm 3 po 1.5 10 13

no 
1.8 10  6 2
 1.08  10  3 cm 3
Germanium:
2
3 1015 N  Nd  N  Nd 
po  a   a   n i2
(c) The result implies that there is only one 2  2 
minority carrier in a volume of 10 3 cm 3 . 2
 1.5 10 13   1.5  10 13 
_______________________________________  
2
 
  2

  2.4  1013
 
2

   
4.37 or
(a) For the donor level
p o  3.26  10 13 cm 3
nd 1
 Then
Nd 1  Ed  E F 
1  exp
2  kT

 no 
ni2


2.4  10 13 
2

 1.76  1013 cm 3
p o 3.264 10 13
1
 Gallium Arsenide:
1  0.20 
1  exp  p o  N a  N d  1.5 10 13 cm 3
2  0.0259 
and
or
nd ni2
no  

1.8  10 6 
2

 0.216 cm 3
 8.85 10  4 po 1.5 10 13
Nd
(b) We have _______________________________________
1
f F E   4.39
 E  EF  (a) N d  N a  n-type
1  exp 
 kT  (b) n o  N d  N a  2  10 15  1.2  10 15
Now
E  E F  E  E c   E c  E F   810 14 cm 3
or
po 
n i2


1.5 10 10 
2

 2.81 10 5 cm 3
E  E F  kT  0.245 no 8  1014
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(c) p o   N a  N a   N d 4.43
Plot
4  10 15
 N a  1.2  10  2  10
15 15
_______________________________________
 N a  4.8  1015 cm 3

no 
1.5 10  10 2
 5.625  10 cm 4 3
4.44
Plot
4 1015 _______________________________________
_______________________________________
4.45
4.40 2
Nd  Na  N  Na 
n2
no  i 
1.5  10 10  2

 1.125  10 15 cm 3
no 
2
  d
 2
  n i2

po 2  10 5
2  1014  1.2  1014
n o  p o  n-type 1.1 1014 
2
_______________________________________
2
 2  10 14  1.2  1014 
4.41     n i2

3  2 
i 
n  1.04  10
2 19
6.0 10  18  250 
  1.110 14
 4  1013   4 10 
2 13 2
 n i2
 300 
  0.66  4.9  10 27  1.6  10 27  n i2
 exp  
 0.0259250 300  so n i  5.74 10 13 cm 3
 1.8936 10 24 n i2 3.3  10 27
po    3  1013 cm 3
 n i  1.376 10 12 cm 3 n o 1.1 1014
_______________________________________
n i2 n2 1
no   i  n o2  n i2
p o 4n o 4 4.46
1 (a) N a  N d  p-type
 n o  ni
2 Majority carriers are holes
So n o  6.88  10 11 cm 3 , p o  N a  N d  3 10 16  1.5  1016
Then p o  2.75  10 12 cm 3  1.5  1016 cm 3
2
Minority carriers are electrons
po 
Na
2
N 
  a   ni2 n2
no  i 

1.5 10 10 2

 1.5  10 4 cm 3
 2  po 1.5  10 16
2
 Na  (b) Boron atoms must be added
 2.752  10  2 
12

  p o  N a  N a  N d

N 
2
5  10 16  N a  3  1016  1.5  10 16
  a   1.8936 10 24
 2  So N a  3.5  1016 cm 3

 N 
7.5735  10 24  2.752  10 12 N a   a  
2

no 
1.5  10  10 2
 4.5  10 3 cm 3
 2  5  10 16

2 _______________________________________
N 
  a   1.8936 10 24
 2 
so that N a  2.064  1012 cm 3
_______________________________________

4.42
Plot
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.47 N 
(a) p o  ni  n-type (b) E F  E Fi  kT ln d 

 ni 
n i2 n2
(b) p o   no  i  Nd 
no po  0.0259 ln 
 1.5  10
10

no 
1.5 10  10 2
 1.125 1016 cm 3 For 10 14 cm 3 , E F  E Fi  0.2280 eV
2  10 4
10 15 cm 3 , E F  E Fi  0.2877 eV
 electrons are majority carriers
p o  210 4 cm 3 10 16 cm 3 , E F  E Fi  0.3473 eV
 holes are minority carriers 10 17 cm 3 , E F  E Fi  0.4070 eV
(c) n o  N d  N a _______________________________________
1.125  1016  N d  7  1015
4.50
so N d  1.825  10 16 cm 3 2
N N 
_______________________________________ (a) n o  d   d   n i2
2  2 
4.48 n o  1.05 N d  1.05 10 15 cm 3
p 
E Fi  E F  kT ln o  1.05 10 15
 0.5  1015 
2

 ni 
For Germanium 
 0.5  1015  2
 n i2
T (K) kT (eV) n i (cm 3 ) so n i2  5.25  10 28
200 0.01727 2.16 10 10 Now
3
400 0.03453 8.60  1014    T 
n i2  2.8 10 19 1.04  10 19   
600 0.0518 3.82  10 16  300 
  1.12 
 exp  
 0.0259T 300 
2
Na N 
po    a   ni2 and 3
2  2 
5.25 10 28

 2.912  10 38

 T 
 
N a  10 15 cm 3  300 
T (K) p o (cm 3 ) E Fi  E F  (eV)   12972.973 
 exp 
T 
200 1.0  1015 0.1855  
By trial and error, T  536.5 K
400 1.49  10 15
0.01898
(b) At T  300 K,
600 3.87  10 16 0.000674
N 
E c  E F  kT ln c 
_______________________________________  no 
 2.8  1019 
4.49 E c  E F  0.0259 ln 15


 10 
N 
(a) E c  E F  kT ln c 
  0.2652 eV
 Nd  At T  536.5 K,
 2.8  10 19   536.5 
 0.0259 ln 
 kT  0.0259   0.046318 eV
 Nd   300 
For 10 14 cm 3 , E c  E F  0.3249 eV 3/ 2

  536.5 
N c  2.8  10 19  
10 15 cm 3 , E c  E F  0.2652 eV  300 
10 16 cm 3 , E c  E F  0.2056 eV  6.696  10 19 cm 3
10 17 cm 3 , E c  E F  0.1459 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

N  Then, T  200 K, E Fi  E F  0.4212 eV

E c  E F  kT ln c 

 no  T  400 K, E Fi  E F  0.2465 eV
 6.696  10 19  T  600 K, E Fi  E F  0.0630 eV
E c  E F  0.046318 ln 15 
 _______________________________________
 1.05  10 
 0.5124 eV 4.52
then E c  E F   0.2472 eV (a)
(c) Closer to the intrinsic energy level. N   Na 
E Fi  E F  kT ln a   0.0259 ln 
_______________________________________ 
 1.8 10
6
 ni  
4.51 For N a  10 14 cm 3 , E Fi  E F  0.4619 eV
p  N a  10 15 cm 3 , E Fi  E F  0.5215 eV
E Fi  E F  kT ln o 
 ni 
16
N a  10 cm 3 , E Fi  E F  0.5811 eV
At T  200 K, kT  0.017267 eV
N a  10 17 cm 3 , E Fi  E F  0.6408 eV
T  400 K, kT  0.034533 eV
(b)
T  600 K, kT  0.0518 eV
N   7.0  1018 
E F  E  kT ln    0.0259 ln 
At T  200 K,   N 
 Na   a 
3

   200 
n i2  2.8  10 19 1.04  10 19    For N a  10 14 cm 3 , E F  E  0.2889 eV
 300  N a  10 15 cm 3 , E F  E  0.2293 eV
  1.12  16
N a  10 cm 3 , E F  E  0.1697 eV
 exp  
 0.017267 
N a  10 17 cm 3 , E F  E  0.1100 eV
 ni  7.638  10 4 cm 3 _______________________________________
At T  400 K,
3 4.53
 2.8  10 1.04  10 
2 19  400  19
n i   m *p 
300   3
(a) E Fi  E midgap  kT ln * 
4  mn 
  1.12   
 exp  
 0.034533  3
 0.0259 ln10
 n i  2.381 1012 cm 3 4
At T  600 K, or
3 E Fi  E midgap  0.0447 eV
n  2.8 10
2
i  19
1.04 10  19  600 
  (b) Impurity atoms to be added so
 300  E midgap  E F  0.45 eV
  1.12  (i) p-type, so add acceptor atoms
 exp  
 0.0518  (ii) E Fi  E F  0.0447  0.45  0.4947 eV
 ni  9.740  1014 cm 3 Then
At T  200 K and T  400 K,  E  EF 
p o  ni exp Fi 
p o  N a  310 15 cm 3  kT 
At T  600 K,
   0.4947 
 10 5 exp 
N N 
2  0.0259 
p o  a   a   ni2 or
2  2 
p o  N a  1.97  10 13 cm 3
2
 3  1015  _______________________________________

3  1015
2
  
  9.740  1014
 
2

 2 
 3.288  1015 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.54 N 
  E c  E F   (b) E F  E Fi  kT ln c 

n o  N d  N a  N c exp    Nd 
 kT 
 2.8  10 19 
so  0.0259 ln   0.1876 eV

 2 10
16


N d  5  1015  2.8  1019 exp 
  0.215 
 (c) For part (a);
 0.0259 
p o  210 16 cm 3
 5  1015  6.95  10 15
or
no 
ni2


1.5 10 10 
2

N d  1.2 10 16 cm 3 po 2  1016

_______________________________________  1.125  10 4 cm 3
For part (b):
4.55
n o  2 10 16 cm 3
(a) Silicon
N  po 
n i2


1.5  1010  2

(i) E c  E F  kT ln c 

 Nd 
no 2  1016
 2.8  10 19   1.125  10 4 cm 3
 0.0259 ln 15 
  0.2188 eV _______________________________________
 6  10 
(ii) E c  E F  0.2188  0.0259  0.1929 eV 4.57
  E c  E F    E  E Fi 
n o  ni exp  F
N d  N c exp   
 kT   kT 


 2.8 1019 exp  
  0.1929 

   .55 
 1.8 10 6 exp 
0

 0.0259   0.0259 
N d  1.631 10 16 cm 3  N d  6 10 15  3.0  10 15 cm 3
Add additional acceptor impurities
 N d  1.031 1016 cm 3 Additional
no  N d  N a
donor atoms
(b) GaAs 3  1015  7  1015  N a
 4.7  10 17   N a  4 10 15 cm 3
(i) E c  E F  0.0259 ln 

 10
15
 _______________________________________
 0.15936 eV
4.58
(ii) E c  E F  0.15936  0.0259  0.13346 eV
p 
(a) E Fi  E F  kT ln o 

N d  4.7 10 17
   0.13346 
exp    ni 
 0.0259 
 3  1015 
 2.718 10 15 cm 3  N d  10 15  0.0259 ln   0.3161 eV

 1.5  10
10

 N d  1.718  1015 cm 3 Additional
n 
donor atoms (b) E F  E Fi  kT ln o 

_______________________________________  ni 
 3  10 16 
4.56  0.0259 ln   0.3758 eV

 1.5  10
10
N  
(a) E Fi  E F  kT ln  
 (c) E F  E Fi
 Na 
 1.04  1019 
 0.0259 ln   0.1620 eV

 2  10
16

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

p  4.60
(d) E Fi  E F  kT ln o  n-type
 ni 
n 
 375   4  10
15
 E F  E Fi  kT ln o 

 0.0259  ln 
  ni 
 300   7.334 10
11

 1.125  10 16 
 0.2786 eV  0.0259 ln   0.3504 eV
 
 1.5  10
10
n  
(e) E F  E Fi  kT ln o  ______________________________________
 ni 
 450   1.029 10 
14
4.61
 0.0259  ln
 300   1.722 10 
13 2
Na N 
po    a   ni2
 0.06945 eV 2  2 
_______________________________________
5  1015
5.08 1015 
4.59 2
N   5  1015 
2
(a) E F  E  kT ln  
     n i2
 po  
 2 
 7.0  10 18 
 0.0259 ln   0.2009 eV
 5.08 10 15
 2.5  1015  2

 3  10
15

 2.5  10  15 2
 n i2
 7.0  10  18
(b) E F  E  0.0259 ln 
4  6.6564 10 30  6.25  10 30  ni2
 1.08  10 
 1.360 eV  ni2  4.064  10 29
 7.0  10 18   Eg 
(c) E F  E  0.0259  ln 6 
 n i2  N c N  exp  
 1.8 10   kT 
 0.7508 eV  350 
kT  0.0259   0.030217 eV
 375   300 
(d) E F  E  0.0259 
 300  2

 
 7.0 10 375 300
18 3/ 2


N c  1.2  10 19  
 350 
  1.633  10 cm
19 3

 ln   300 

 4  1015  2

 0.2526 eV 
N   1.8 10 19  
 350 
  2.45  10 cm
19 3

 300 
 450 
(e) E F  E  0.0259  Now
 300  
4.064  10 29  1.633  1019 2.45  10 19  
 ln 
 18

 7.0  10 450 300 

3/ 2
  Eg 
 exp  
 1.48  10 7   0.030217 
 1.068 eV So
_______________________________________ 
 1.633  10 19 2.45  1019 
E g  0.030217  ln 
 

 4.064  10 29 
 E g  0.6257 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.62
(a) Replace Ga atoms  Silicon acts as a
donor
 
N d  0.05 7  1015  3.5  10 14 cm 3
Replace As atoms  Silicon acts as an
acceptor
 
N a  0.95 7  1015  6.65 10 15 cm 3
(b) N a  N d  p-type
(c) p o  N a  N d  6.65  1015  3.5  1014
 6.3  1015 cm 3

no 
n i2


1.8  10 6
2

 5.14 10  4 cm 3
po 6.3 10 15

p 
(d) E Fi  E F  kT ln o 
 ni 
 6.3  1015 
 0.0259 ln 6 
  0.5692 eV
 1.8  10 
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