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Assignment Module 1 ES201

This document is an assignment for Basic Electronics Engineering covering various topics such as diode characteristics, rectifiers, voltage regulators, and semiconductor physics. It includes questions on calculating diffusion capacitance, reverse saturation current, designing circuits, and comparing different types of diodes. Additionally, it discusses the operation of rectifiers, static and dynamic resistances, and the characteristics of ideal versus practical diodes.

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nayanhandique68
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0 views2 pages

Assignment Module 1 ES201

This document is an assignment for Basic Electronics Engineering covering various topics such as diode characteristics, rectifiers, voltage regulators, and semiconductor physics. It includes questions on calculating diffusion capacitance, reverse saturation current, designing circuits, and comparing different types of diodes. Additionally, it discusses the operation of rectifiers, static and dynamic resistances, and the characteristics of ideal versus practical diodes.

Uploaded by

nayanhandique68
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

DEPARTMENT OF ELECTRNICS & COMMUNICATION ENGINEERING

Assignment

Sub: Basic Electronics Engineering (ES201)


Q.1 (a) How does CD vary with the forward voltage applied? Find the diffusion capacitance of a Si diode with I F
= 12 mA and charge carrier transit time (mean lifetime of holes / charge carriers), τ = 70 ns.

(b) A silicon diode draws 50mA with a forward bias of 0.27 V. The junction is at room temperature of 27°C.
Determine the reverse saturation current of the diode.

Q.2 With the help of a neat circuit diagram explain the operation of a Bridge Rectifier. Mention the advantages
and disadvantages of Center-tapped FWR and Bridge rectifier.

Q.3 Design a voltage regulator using Zener diode to maintain VL at 11V for a load variation (IL) from 0 mA to 150
mA. Determine RS and VZ.

Q.4 Discuss static and dynamic resistances of P-N junction diode. Derive the expression for dynamic resistance of
diode.

Q.5 Determine Vo1 and Vo2 for the given networks:

Q.6 (a) Determine Vo for the given network:

(b) Design a clamper to perform the function indicated in Fig.


(c) Draw the output wave form of given clipper circuit.

(d) Draw the output wave form of given clipper circuit.

(e) Draw the output wave form of given clamper circuit.

Q.7 Derive the expressions for the various parameters associated with half wave and full wave rectifiers.

Q.8 Compare Schottky diode, LED and Solar Cell using suitable diagrams and discuss merits and demerits of each.

Q.9 A full wave rectifier uses a double diode with each element having a constant forward resistance of 500Ω. The
transformer rms secondary voltage from the center tap to each plate is 300V and the load has a resistance of 2.5
KΩ. Determine dc output power, ac input power, rectification efficiency and ripple factor.

Q.10 Explain drift and diffusion currents using suitable diagram and derive the expression for total current in
semiconductor P-N junction diode.

Q.11 (a) Compare the characteristics of an ideal diode and a practical diode. Draw the equivalent circuit models
and their corresponding V–I characteristics for the following diode models:
i. Piecewise-linear approximation equivalent circuit
ii. Simplified equivalent circuit
iii. Ideal diode model

(b) Discuss the Fermi levels of N-type and P-type semiconductors and draw the energy band diagram of a PN
junction diode.

Q.12 Differentiate between drift current and diffusion current. Write the expressions for calculating the total current
flowing through a semiconductor diode.

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