BCR521

NPN Silicon Digital Transistor

3

Switching circuit, inverter, interface circuit,
driver circuit

Built in bias resistor (R1=1k, R2=1k)

C
2
3

R1
1 VPS05161
R2

1 2

B E
EHA07184

Type Marking Pin Configuration Package

BCR521 XVs 1=B 2=E 3=C SOT23

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Input on Voltage Vi(on) 10
DC collector current IC 500 mA
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150

Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance

1 Dec-13-2001
 BCR521

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 50 - - V
IC = 100 µA, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 µA, IE = 0
Collector cutoff current ICBO - - 100 nA
VCB = 40 V, IE = 0
Emitter cutoff current IEBO - - 3.75 mA
VEB = 5 V, IC = 0
DC current gain 1) hFE 20 - - -
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage1) VCEsat - - 0.3 V
IC = 50 mA, IB = 2.5 mA
Input off voltage Vi(off) 0.6 - 1.5
IC = 100 µA, VCE = 5 V
Input on Voltage Vi(on) 1 - 1.8
IC = 10 mA, VCE = 0.3 V
Input resistor R1 0.7 1 1.3 k

Resistor ratio R1 /R2 0.9 1 1.1 -

AC Characteristics
Transition frequency fT - 100 - MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz

1) Pulse test: t < 300
s; D < 2%

2 Dec-13-2001
 BCR521

DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage

VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20

10 3 10 3

mA
10 2
hFE

IC
10 1 10 2

10 0

10 -1 -1 0 1 2 3
10 1
10 10 10 10 mA 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0
IC VCEsat

Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC)

VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 3 10 1

mA

mA
10 2
IC

IC

10 1 10 0

10 0

10 -1 -1 0 1 2
10 -1
10 10 10 V 10 0.0 0.5 1.0 V 2.0
Vi(on) Vi(off)

3 Dec-13-2001
 BCR521

Total power dissipation Ptot = f (TS )

400

mW

300
Ptot

250

200

150

100

50

0
0 20 40 60 80 100 120 °C 150
TS

Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load

Ptotmax / PtotDC = f (tp)

10 3 10 4

K/W -
Ptotmax / PtotDC

10 2 10 3
D=0
RthJS

0.005
0.01
0.02
10 1 10 2
0.05
0.1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
10 0 10 1
0.01
0.005
D=0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

4 Dec-13-2001