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EEE212_Lab_Test_Notes

The document outlines various experiments related to electronic components, including diodes, rectifiers, and BJTs. It provides theoretical explanations, key formulas, procedures, precautions, and common mistakes for each experiment. Additionally, it includes questions and answers to reinforce understanding of the concepts covered.

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0% found this document useful (0 votes)
4 views14 pages

EEE212_Lab_Test_Notes

The document outlines various experiments related to electronic components, including diodes, rectifiers, and BJTs. It provides theoretical explanations, key formulas, procedures, precautions, and common mistakes for each experiment. Additionally, it includes questions and answers to reinforce understanding of the concepts covered.

Uploaded by

aunik3012
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Table of Contents

1. Exp 02 — I-V Characteristics: General-purpose Diode & Zener Diode


2. Exp 03 — Half-Wave & Full-Wave Bridge Rectifier
3. Exp 04 — Clipper & Clamper Circuits
4. Exp 05 — CE/CB BJT Input-Output Characteristics & Biasing
5. Exp 06 — CE BJT Amplifier: Gain, Frequency Response, h-parameters
6. Exp 07 — MOSFET Drain & Transfer Characteristics
7. Exp 08 — 741 Op-Amp: Inverting/Non-Inverting/Differentiator/Integrator/Filter
8. Last-Minute Revision Sheet (All Formulas + Key Points)
Exp 02: Diode & Zener Diode I-V Characteristics
Theory (Simple Explanation)
A diode is a two-terminal device made from a p-n junction. It conducts current in one direction only (like a one-way valve).
When forward biased (p-side +ve, n-side -ve), current flows easily once the voltage crosses the knee/cut-in voltage. When
reverse biased, almost no current flows (only a tiny leakage current in µA/pA range) — the diode acts like an open switch,
until breakdown voltage is reached.
• Cut-in (knee) voltage: Silicon ≈ 0.7 V, Germanium ≈ 0.3 V.
• Forward bias: p-side to +ve terminal, n-side to -ve terminal → diode conducts.
• Reverse bias: diode blocks current (only leakage current flows).
• Zener diode is a specially made diode designed to operate safely in the reverse breakdown region — used as a
voltage regulator.
• In a Zener diode, current enters the cathode and cathode is +ve w.r.t. anode during normal (regulator) operation.

Key Formulas
Static Resistance: R = V / I (forward: R_dc = V_f / I_f , reverse: R_dc = V_r / I_r)

Dynamic Resistance: r = ΔV / ΔI (r_ac = ΔV_f/ΔI_f or ΔV_r/ΔI_r)

Zener relation: ΔV = r_z · ΔI (r_z = incremental / dynamic resistance of Zener, few Ω to tens of
Ω)

Circuit & Procedure


Forward Bias: Diode anode → +ve supply through 1 kΩ resistor; ammeter in series; voltmeter across diode. Vary V from
0→0.6 V in 0.1 V steps, then 0.6→0.76 V in 0.02 V steps; note I each time.
Reverse Bias: Reverse the diode polarity. Vary V from 0→10 V in 1 V steps; note I (µA range).
Zener (reverse): Vary voltage 0→6 V in 1 V steps, then 0.1 V steps till breakdown; note current.
Graph: 4-quadrant graph. +X = V_F, −X = V_R, +Y = I_F, −Y = I_R. Plot forward curve in Quadrant I, reverse curve in
Quadrant III. Find knee voltage and breakdown voltage (V_BR) from the graph.

Precautions / Common Mistakes


• Never exceed diode rated current — always use a series current-limiting resistor (1 kΩ).
• Check polarity of ammeter/voltmeter before switching ON.
• Common mistake: swapping forward/reverse connections for the Zener diode.
• Common mistake: forgetting that reverse current is in µA while forward current is in mA — different scales!
1. The cut-in voltage of a silicon diode is approximately:
A) 0.3 V
B) 0.7 V
C) 1.2 V
D) 5 V
Answer: B) 0.7 V
2. Zener diodes are normally operated in:
A) Forward bias active region
B) Reverse breakdown region
C) Cut-off region
D) Saturation region
Answer: B) Reverse breakdown region
3. Dynamic resistance of a diode is given by:
A) V/I
B) ΔV/ΔI
C) I/V
D) ΔI/ΔV
Answer: B) ΔV/ΔI
4. In reverse bias, diode current is generally measured in:
A) Amperes
B) milliamperes
C) microamperes/picoamperes
D) kiloamperes
Answer: C) microamperes/picoamperes
5. On the I-V graph, the reverse-biased Zener curve is plotted in:
A) Quadrant I
B) Quadrant II
C) Quadrant III
D) Quadrant IV
Answer: C) Quadrant III

Short Q&A
Q: What is knee voltage?
A: The forward voltage at which diode current starts increasing sharply (~0.7V for Si).
Q: Why is a series resistor used in the diode circuit?
A: To limit current and protect the diode from damage.
Q: What is breakdown voltage (V_BR)?
A: The reverse voltage at which current suddenly increases sharply (Zener/avalanche breakdown).

Viva Questions
Q1. Why does a diode conduct only in one direction?
Ans: Because the p-n junction allows majority carrier flow only when forward biased; reverse bias widens depletion
region and blocks current.
Q2. What is the material used for the diode in this lab?
Ans: Silicon (1N4007).
Q3. Why is Zener diode used as voltage regulator?
Ans: Because in breakdown region its voltage stays nearly constant despite current changes.
Q4. What happens if reverse voltage exceeds breakdown in a normal diode? Ans: It gets permanently
damaged (unless it's a Zener, designed for this).

Exp 03: Half-Wave & Full-Wave Bridge Rectifier


Theory (Simple Explanation)
A rectifier converts AC to DC using diodes. Half-wave rectifier uses 1 diode and passes only the positive half-cycle (output
= 0 during negative half). Full-wave bridge rectifier uses 4 diodes and passes both halves, giving a smoother, higher-
average output.
• Half-wave: diode conducts only during + half cycle of AC input.
• Full-wave bridge: On +half cycle D1 & D3 conduct; on −half cycle D2 & D4 conduct — output is always positive.
• A smoothing capacitor across the load reduces ripple (charges on rise, discharges on fall) — makes output more DC-
like.
• Actual peak output = Peak input − 0.7 V (diode drop) for HW; for bridge, 2 diodes conduct at once so drop ≈ 1.4V.

Key Formulas
Half-Wave: V_avg = V_p/π , V_rms = V_p/√2 , V_r(HW) = I/(C·f)

Half-Wave DC output: V_dc = V_p − (1/2)·V_r = V_p − I/(2Cf)

Full-Wave: V_avg = 2V_p/π (no capacitor) ; ripple freq = 2 × input freq

Full-Wave: V_r(FW) = I/(2Cf) , V_dc = V_p − I/(4Cf)

Ripple Factor: r = (V_r/V_dc) × 100% [Typical: HW r ≈ 1.21 (121%), FW r ≈


0.48 (48%)]

Procedure (both circuits)


• Connect circuit (HW: 1 diode + R_L; FW Bridge: 4 diodes + C + R_L).
• Set input = 10 V(p-p), 1 kHz sine wave from function generator.
• Connect multimeter across 1 kΩ load; measure V_AC and V_DC.
• Calculate ripple factor r = V_r/V_dc × 100%.
• Observe input & output waveform on oscilloscope (CH1 = input, CH2 = output).
• Note peak voltage and frequency of both waveforms.

Precautions / Common Mistakes


• Do not exceed diode current rating.
• Check diode orientation carefully in bridge circuit — wrong orientation gives no output or short circuit.
• Common mistake: confusing ripple frequency (FW = 2× input freq, HW = same as input freq).
• Remember output DC voltage of FW is always higher than HW for same input.
1. Ripple frequency of a full-wave rectifier compared to input frequency is:
A) Same
B) Half
C) Double
D) Four times
Answer: C) Double
2. Average DC output voltage of half-wave rectifier is:
A) V_p/π
B) 2V_p/π
C) V_p/2
D) V_p
Answer: A) V_p/π
3. Number of diodes used in a bridge rectifier is:
A) 1
B) 2
C) 2
D) 2
Answer: D)4. Typical ripple factor of full-wave rectifier is about: Error! Bookmark not defined.

A) 1.21
B) 0.48
C) 2.0
D) 0
Answer: B) 0.48
5. Function of the smoothing capacitor is to:
A) Increase ripple
B) Reduce ripple / smooth output
C) Rectify AC
D) Increase frequency
Answer: B) Reduce ripple / smooth output

Viva Questions
Q1. Why is full-wave rectifier preferred over half-wave?
Ans: Higher DC output, lower ripple factor, better efficiency.
Q2. What is ripple factor?
Ans: Ratio of AC ripple component to DC component in rectified output — measures smoothness.
Q3. Why does output peak = input peak − 0.7V in HW rectifier?
Ans: Because of the forward voltage drop across the conducting diode.
Q4. What happens if one diode in the bridge fails (open)? Ans: Circuit behaves
like a half-wave rectifier.
Exp 04: Clipper & Clamper Circuits
Theory (Simple Explanation)
Clipper: Cuts off (clips) part of the input waveform above/below a reference level, without distorting the remaining part.
Used to protect circuits from over-voltage.
• Positive clipper: removes/clips the positive portion of signal.
• Negative clipper: removes/clips the negative portion of signal.
• Biased clipper: clipping level is shifted using a DC battery in series with diode.
• Combination clipper: clips both + and − sides at different levels (uses 2 diodes with 2 DC sources).
Clamper: Shifts the entire waveform up or down to a new DC level WITHOUT changing its shape. Uses a capacitor (in
series with input) + diode + resistor. Also called a 'DC restorer'.
• Positive clamper: shifts waveform upward (adds positive DC level).
• Negative clamper: shifts waveform downward (adds negative DC level).
• Capacitor charges to peak value and holds charge (time constant τ = RC must be large, ≥ 5×period).

Key Points
Clamper time constant: τ = R·C (must be ≫ time period of input signal, so capacitor doesn't
discharge much)

Positive clamper output ranges roughly from 0 to +2V_m (shifted up by V_m)

Negative clamper output ranges roughly from −2V_m to 0 (shifted down by V_m)

Procedure
• Clipper: Build combination clipper circuit (R + D1,D2 with V1,V2 bias). Vary V1 (1–5V) keeping V2 fixed=2V, note
output voltage & current; repeat varying V2 keeping V1 fixed=5V.
• Clamper: Build circuit (C=1µF, R_L=1MΩ or 250Ω, diode, V1 source). Vary V1 (1–5V); note output & capacitor voltage.
• Compare input sine wave (oscilloscope CH1) with output waveform (CH2) to see the shift/clipping.

Precautions / Common Mistakes


• Ensure capacitor value is large enough (per RC time constant rule) or output waveform will distort.
• Common mistake: mixing up clipper and clamper — clipper removes part of signal; clamper shifts DC level only, shape
stays same.
• Check diode direction — determines whether clipper/clamper is positive or negative type.
1. A clamper circuit changes the:
A) Shape of waveform
B) DC level of waveform
C) Frequency of waveform
D) Amplitude only
Answer: B) DC level of waveform
2. A clipper circuit is used to:
A) Shift DC level
B) Remove part of the waveform
C) Amplify signal
D) Rectify AC only
Answer: B) Remove part of the waveform
3. For proper clamping action, time constant RC should be:
A) Very small
B) Equal to input period
C) Much larger than input period
D) Zero
Answer: C) Much larger than input period
4. A clamper circuit essentially consists of a diode, resistor and:
A) Inductor
B) Capacitor
C) Transformer
D) Transistor
Answer: B) Capacitor
5. The half-wave rectifier is an example of a:
A) Clamper
B) Simplest diode clipper
C) Amplifier
D) Filter
Answer: B) Simplest diode clipper

Viva Questions
Q1. Why is clamper also called a DC restorer?
Ans: Because it restores/adds a DC level to an AC signal without changing its shape.
Q2. What is the role of the capacitor in a clamper?
Ans: It stores charge equal to peak input and provides the DC shift.
Q3. Name two applications of clipper circuits.
Ans: Voltage limiting / circuit protection, and waveform shaping (e.g. TV sync separation).
Q4. What is a biased clipper?
Ans: A clipper with a DC voltage source added in series with the diode to set the clipping level away from 0V.

Theory (Simple Explanation)
BJT (Bipolar Junction Transistor) has 2 p-n junctions: emitter-base junction and collector-base junction. For amplifier (active)
operation: emitter junction forward biased, collector junction reverse biased.
Common Emitter (CE): emitter is common to input & output; gives high current and voltage gain, used most in
amplifiers.
• Common Base (CB): base is common; gives high voltage gain but current gain < 1 (α close to 1).
• Input characteristics: I_B vs V_BE (for various V_CE) — looks like a diode curve.
• Output characteristics: I_C vs V_CE (for various I_B) — shows saturation, active and cut-off regions.
• Load line: drawn from I_C(max)=V_S/R_L (on Y-axis) to V_CE=V_S (on X-axis); slope = −1/R_L. • Biasing
types: Fixed bias (simple, but Q-point depends heavily on β — not stable); Voltage-divider (self) bias — most
common, nearly independent of β, very stable.

Key Formulas
I_E = I_C + I_B = [(β+1)/β]·I_C

Common Emitter current gain: β = I_C / I_B (β ≫ 1, typically 50–300)

Common Base current gain: α = β/(β+1) (α close to 1, e.g. 0.98–0.99)

Relation: I_C = α·I_E

Saturation current: I_C(max) = V_S / R_L ; Load line slope = −1/R_L

Procedure
• Connect CE circuit: R_in sets base current I_B (keep V_in fixed so I_B constant).
• Vary V_CE, record V_out (=V_CE) and I_C for R_in = 500 kΩ, then repeat for R_in = 250 kΩ.
• Plot I_C vs V_CE for each I_B → output characteristic family of curves.
• For biasing: connect fixed-bias circuit (R_B=270k, R_C=5.6k, V1=3V, V2=15V); measure V_B, V_E, V_C, V_CE, I_B,
I_E, I_C.
• Calculate β = I_C/I_B from measured values.

Precautions / Common Mistakes


• Never exceed transistor's max V_CE or I_C rating (may damage BC107/2N3904).
• Correctly identify Emitter, Base, Collector pins before wiring — wrong pinout is the most common mistake.
• Keep I_B constant while varying V_CE for output characteristics (don't accidentally change R_in mid-experiment).
• Remember: in saturation region, V_CE ≈ 0 and I_C is max; in cut-off, I_C ≈ 0.
1. In active mode, the emitter-base junction is:
A) Reverse biased
B) Forward biased
C) Unbiased
D) Short circuited
Answer: B) Forward biased
2. Common Emitter current gain β is defined as:
A) I_E/I_B
B) I_C/I_E
C) I_C/I_B
D) I_B/I_C
Answer: C) I_C/I_B
3. The value of α (common base current gain) is:
A) Much greater than 1
B) Close to 1 (but less than 1)
C) Always negative
D) Exactly 0
Answer: B) Close to 1 (but less than 1)
4. Which biasing method is least dependent on β?
A) Fixed bias
B) Voltage divider (self) bias
C) No bias
D) Emitter bias without R_E
Answer: B) Voltage divider (self) bias
5. Slope of the DC load line is:
A) R_L
B) 1/R_L
C) −1/R_L
D) −R_L
Answer: C) −1/R_L

Viva Questions
Q1. Why is fixed bias not used in practice?
Ans: Because Q-point strongly depends on β, which varies with temperature and between transistors — unstable.
Q2. What is Q-point?
Ans: The DC operating (quiescent) point on the load line — set by bias, defines I_C and V_CE with no input signal.
Q3. Why must collector junction be reverse biased in active mode?
Ans: So the collector can efficiently collect carriers injected by the emitter, without opposing/creating extra current.
Q4. Relation between α and β?
Ans: α = β/(β+1), and β = α/(1−α).

Exp 06: CE BJT Amplifier — Gain & Frequency Response


Theory (Simple Explanation)
The CE amplifier gives high voltage & current gain, and the output is 180° out of phase with input. A voltage divider bias
circuit sets the Q-point; coupling capacitors (C1, C2) block DC and pass AC; emitter bypass capacitor (C3) improves gain
at mid/high frequencies.
At low frequencies, coupling/bypass capacitors have high reactance → gain drops (lower cutoff f1).
• At high frequencies, internal transistor capacitances reduce gain → drops after upper cutoff f2.
• Between f1 and f2 is the 'mid-band' region where gain is maximum & flat.

Key Formulas
Voltage Gain: A_v = V_o / V_i

Gain in dB: A_v(dB) = 20·log10(V_o/V_i)

Bandwidth: BW = f2 − f1 (f1 = lower cutoff, f2 = upper cutoff, at −3dB points)

Gain-Bandwidth Product: GBW = Mid-band gain (linear, at 3dB down point) × Bandwidth

Procedure
• Build CE amplifier circuit (BC107, R1=33k, R2=3.3k, R3=1.5k, R4(RE)=330Ω, C1,C2=10µF, C3=100µF, Vcc=12V).
• Apply input 20 mV(p-p), 1 kHz sine from function generator.
• Measure output V_o; calculate gain A_v = V_o/V_i.
• Keep input constant at 20mV(p-p); vary frequency 100Hz → 1MHz; record V_o at each frequency.
• Calculate gain in dB for each frequency; plot Gain(dB) vs frequency on semi-log graph paper. • Identify −3dB points
from graph → these give f1 (lower) and f2 (upper) cutoff frequencies; BW = f2−f1.

Precautions / Common Mistakes


• Keep input amplitude constant (20mV p-p) while sweeping frequency — do NOT let it drift. • Use semi-log graph
(X-axis = log scale frequency, Y-axis = linear dB) — common mistake is using linear-linear graph.
• Common mistake: forgetting the −3dB point corresponds to gain = 0.707 × max gain (or max_dB − 3).

• CE amplifier output is 180° out of phase with input — remember this for phase-related questions.
1. CE amplifier output signal is __ out of phase with input:
A) 0°
B) 90°
C) 180°
D) 270°
Answer: C) 180°
2. Voltage gain in decibels is calculated as:
A) 10log(V_o/V_i)
B) 20log(V_o/V_i)
C) log(V_o/V_i)
D) 20log(V_i/V_o)
Answer: B) 20log(V_o/V_i)
3. Bandwidth of an amplifier is:
A) f1 + f2
B) f1 × f2
C) f2 − f1
D) f2/f1
Answer: C) f2 − f1
4. At the −3dB cutoff frequency, gain falls to what fraction of max value:
A) 0.5
B) 0.707
C) 0.9
D) 0.1
Answer: B) 0.707
5. What type of graph paper is used to plot frequency response?
A) Linear-linear
B) Log-log
C) Semi-log (freq on log axis)
D) Polar graph
Answer: C) Semi-log (freq on log axis)

Viva Questions
Q1. Why does gain drop at low frequencies?
Ans: Reactance of coupling/bypass capacitors increases at low f, blocking more AC signal.
Q2. Why does gain drop at high frequencies?
Ans: Internal (junction/stray) capacitances of the transistor start bypassing signal at high f.
Q3. What is the role of emitter bypass capacitor C3?
Ans: It bypasses AC signal around R_E, preventing gain loss due to emitter degeneration, improving mid-band gain.
Q4. What are h-parameters?
Ans: Hybrid parameters (h_ie, h_fe, h_re, h_oe) that model a transistor as a 2-port network for small-signal AC analysis.
Theory (Simple Explanation)
MOSFET = Metal-Oxide-Semiconductor Field-Effect Transistor. It is a voltage-controlled device (unlike BJT which is
current-controlled). It has 3 terminals: Source, Drain, Gate. Gate is insulated from channel by a thin oxide layer, so gate
current ≈ 0.
Enhancement-type MOSFET is normally OFF; needs V_GS > threshold voltage V_T to start conducting.
• n-channel MOSFET needs positive V_GS (relative to source) to conduct.
• Two regions of operation: Triode/Ohmic region (V_DS small, acts like variable resistor) and Saturation region
(V_DS large, acts like constant current source).
• Condition for triode: (V_GS − V_DS) > V_T. Condition for saturation: (V_GS − V_DS) < V_T.

Key Formulas
Triode region: I_D ≈ μn·Cox·(W/L)·[(V_GS−V_T)·V_DS − (1/2)V_DS²]

Saturation region: I_D = μn·Cox·(W/L)·(V_GS−V_T)²·(1+λV_DS) [λ = 1/V_A]

Transconductance: g_m = ΔI_D / ΔV_GS (at constant V_DS)

Output (drain) resistance: r_o = ΔV_DS / ΔI_D (at constant V_GS)

Procedure
• Build circuit: MOSFET (IRF150 or similar), R1 = 1Ω (sense), V_DD = 20V, V_GS via separate variable supply.
• Set V_GS to a fixed value (e.g., 1.1V, 1.2V, 1.3V, 1.4V, 1.5V — near threshold).
• For each V_GS, vary V_DS and record I_D — repeat for each V_GS value.
• Plot family of I_D vs V_DS curves (one curve per V_GS) → drain characteristics.
• From graph, find V_T (threshold voltage), calculate g_m and r_o.

Precautions / Common Mistakes


• Identify Gate, Drain, Source pins correctly before connecting — wrong pinout can destroy MOSFET.
• Do not exceed max V_DS/V_GS ratings.
• Common mistake: confusing threshold voltage V_T (turns device ON) with cut-in voltage of a diode — different
concepts.
• MOSFET is voltage-controlled, gate draws ~0 current (unlike BJT base current) — common exam trap.
1. MOSFET is a __ controlled device:
A) Current
B) Voltage
C) Power
D) Resistance
Answer: B) Voltage
2. Gate current in an ideal MOSFET is approximately:
A) Very large
B) Equal to drain current
C) Zero (negligible)
D) Equal to source current only
Answer: C) Zero (negligible)
3. Enhancement MOSFET conducts only when:
A) V_GS = 0
B) V_GS < V_T
C) V_GS > V_T (threshold)
D) V_DS = 0
Answer: C) V_GS > V_T (threshold)
4. In saturation region, MOSFET acts approximately like a:
A) Variable resistor
B) Constant current source
C) Short circuit

D) Open circuit
Answer: B) Constant current source
5. Transconductance g_m is defined as:
A) ΔV_DS/ΔI_D
B) ΔI_D/ΔV_GS
C) ΔV_GS/ΔI_D
D) I_D/V_DS
Answer: B) ΔI_D/ΔV_GS

Viva Questions
Q1. What is threshold voltage?
Ans: The minimum gate-source voltage required to create a conducting channel and turn the MOSFET ON.
Q2. Name 2 advantages of MOSFET over BJT.
Ans: Very high input impedance (negligible gate current) and no minority-carrier storage delay → faster switching; also
simpler to fabricate at small sizes.
Q3. Is MOSFET voltage or current controlled?
Ans: Voltage controlled (drain current controlled by gate-source voltage).
Q4. What are the three terminals of MOSFET?
Ans: Source, Gate, Drain (plus body/substrate, often tied to source).
Exp 08: 741 Op-Amp — Amplifiers, Differentiator, Integrator, Filter
Theory (Simple Explanation)
An Op-amp (Operational Amplifier) is a very high-gain DC amplifier (open-loop gain 10⁴–10⁶) with 2 inputs (inverting −, non-
inverting +) and 1 output. Ideal op-amp: infinite input impedance, zero output impedance, infinite gain. External feedback
resistors set the actual (closed-loop) gain.

• Inverting amplifier: input at (−) pin through R_i; feedback R_f from output to (−) pin; (+) pin grounded. Output inverted
(180° shift).
• Non-inverting amplifier: input at (+) pin; R_i grounded, R_f feeds back to (−) pin. Output in phase, gain always > 1.
• Differentiator: output proportional to rate of change (derivative) of input — capacitor at input. • Integrator: output
proportional to the integral (area under curve) of input — capacitor in feedback path.
• Active filters use Op-amp + R + C to pass/block certain frequency ranges with amplification (unlike passive RC filters
which only attenuate).

Key Formulas
Inverting Amp Gain: A_cl = V_o/E_i = −R_f/R_i

Non-Inverting Amp Gain: A_cl = V_o/V_i = 1 + R_f/R_i

Integrator output: V_o(t) = −(1/R1·Cf) ∫V_i(t) dt [condition: T_i > R1·Cf]

Differentiator output: V_o(t) = −Rf·Ci·(dV_i/dt) [condition: Rf·Ci ≥ 10/(π·f_h)]

Gain in dB: A(dB) = 20·log10(V_o/V_i)

Procedure Summary
• Set bias supply to +15V (pin7) and −15V (pin4) for all op-amp circuits. Never exceed ±15V.
• Inverting amp: R_i=10k, R_f=100k → gain = −10. Apply 1V sine at various frequencies (50Hz–500kHz); record V_o
and calculate dB gain.
• Non-inverting amp: R_i=10k, R_f=100k → gain = 11. Input to (+) pin; repeat frequency sweep.
• Integrator: square wave input (500Hz, 5V amplitude) → triangular-ish output.
• Differentiator: triangular wave input (500Hz, 5V amplitude) → square-ish output (spikes at edges).
• Active filters: Sweep frequency, record V_o, plot Gain(dB) vs frequency (semi-log) → find cutoff frequency at −3dB
point.

Precautions / Common Mistakes


• Never exceed ±15V supply on 741 — this destroys the IC.
• Correctly identify pin numbers: Pin2=Inverting input, Pin3=Non-inverting input, Pin6=Output, Pin7=+V, Pin4=−V.
• Common mistake: swapping inverting/non-inverting inputs — completely changes circuit behavior/phase.
• For integrator/differentiator, input waveform TYPE matters (square for integrator input, triangular for differentiator
input) — don't mix up.
1. Closed loop gain of an inverting amplifier is:
A) 1 + R_f/R_i
B) −R_f/R_i
C) R_i/R_f
D) R_f × R_i
Answer: B) −R_f/R_i
2. Closed loop gain of a non-inverting amplifier is always:
A) Less than 1
B) Negative
C) Greater than or equal to 1
D) Zero
Answer: C) Greater than or equal to 1
3. In an ideal op-amp, input impedance is:
A) Zero
B) Very low
C) Infinite
D) Equal to R_f
Answer: C) Infinite
4. Which pin of IC 741 is the inverting input?
A) Pin 2
B) Pin 3
C) Pin 6
D) Pin 7
Answer: A) Pin 2
5. An integrator circuit's output is proportional to the __ of the input:
A) Derivative
B) Integral
C) Square
D) Inverse
Answer: B) Integral
6. A differentiator circuit's output is proportional to the __ of the input:
A) Integral
B) Rate of change (derivative)
C) Amplitude only
D) Frequency squared
Answer: B) Rate of change (derivative)

Viva Questions
Q1. Why is the (−) input called a 'virtual ground' in inverting amplifier?
Ans: Because negative feedback forces V_(−) ≈ V_(+) = 0V (ground), even though no direct ground connection exists
there.
Q2. Why is op-amp gain very high in open loop?
Ans: Because it's designed as a general-purpose high-gain differential amplifier (10⁴–10⁶) meant to be tamed via external
feedback.
Q3. What is virtual short concept?
Ans: In an ideal op-amp with negative feedback, V+ ≈ V− (no current flows into inputs, but voltages are equal).
Q4. Why do we need active filters over passive filters?
Ans: Active filters (with op-amp) can provide gain besides filtering, and don't suffer loading effects/signal loss like passive
RC filters.

Last-Minute Revision Sheet


(Read this 20–30 minutes before the test — only the most critical points)

Exp 02 — Diode/Zener
• Si cut-in ≈ 0.7V, Ge cut-in ≈ 0.3V
• R_dc = V/I (static), r_ac = ΔV/ΔI (dynamic)
• Zener operates in REVERSE breakdown region (voltage regulator)
• Forward current: mA range; Reverse current: µA range

Exp 03 — Rectifiers
• V_avg(HW) = V_p/π ; V_avg(FW) = 2V_p/π
• Ripple factor r = V_r/V_dc × 100% → HW ≈1.21, FW ≈0.48
• FW ripple frequency = 2 × input frequency
• Bridge rectifier uses 4 diodes; HW uses 1 diode

Exp 04 — Clipper/Clamper
• Clipper = removes part of waveform (protection)
• Clamper = shifts DC level, shape unchanged (DC restorer)
• Clamper needs large τ=RC (≫ signal period)
• Half-wave rectifier = simplest diode clipper
Exp 05 — BJT CE/CB
• Active mode: EB junction forward biased, CB junction reverse biased
• β = I_C/I_B (CE gain) ; α = I_C/I_E = β/(β+1) (CB gain)
• I_E = I_C + I_B
• Voltage-divider bias = most stable (β-independent); Fixed bias = least stable

Exp 06 — CE Amplifier
• Output is 180° out of phase with input
• A_v(dB) = 20 log10(V_o/V_i)
• BW = f2 − f1 (upper cutoff − lower cutoff, at −3dB points = 0.707×max gain)
• Plot Gain(dB) vs frequency on SEMI-LOG paper

Exp 07 — MOSFET
• Voltage-controlled device; Gate current ≈ 0
• Conducts only when V_GS > V_T (threshold voltage)
• Triode region: V_DS small (resistor-like); Saturation: V_DS large (current-source-like)
• g_m = ΔI_D/ΔV_GS ; r_o = ΔV_DS/ΔI_D

Exp 08 — 741 Op-Amp


• Inverting gain = −R_f/R_i (180° phase shift)
• Non-inverting gain = 1 + R_f/R_i (always ≥1, in phase)
• Pin2 = Inverting(−), Pin3 = Non-inverting(+), Pin6 = Output, Pin7=+V, Pin4=−V
• Integrator: capacitor in feedback; Differentiator: capacitor at input
• Max supply ±15V — never exceed

General Precautions (apply to ALL experiments)


• Always check circuit connections BEFORE switching ON power supply.
• Never exceed rated voltage/current of diode, BJT, MOSFET, or Op-amp.
• Connect voltmeter/ammeter with correct polarity.
• Identify component pins/terminals correctly before wiring (very common source of errors).
• Use semi-log graph paper whenever plotting Gain(dB) vs Frequency.
• Double check biasing voltage polarity (+15V/−15V for op-amp; V1/V2 for BJT/MOSFET circuits).
Good luck! Revise formulas, know pin diagrams (741 & BJT), and remember the shape of each characteristic curve (diode
I-V, BJT output curves, MOSFET drain curves, rectifier waveforms). You've got this!

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