RESEARCH ARTICLE | OCTOBER 26 2017
Thickness-modulated anisotropic ferromagnetism in Fe-
doped epitaxial HfO2 thin films
Wenlong Liu; Ming Liu; Ruyi Zhang; Rong Ma; Hong Wang
Appl. Phys. Lett. 111, 172404 (2017)
[Link]
View Export
Online Citation
Articles You May Be Interested In
Tailoring the electronic properties of Ca2RuO4 via epitaxial strain
Appl. Phys. Lett. (January 2018)
Large anisotropic room-temperature ferromagnetism in yttrium-doped HfO2 thin film
Appl. Phys. Lett. (May 2024)
Resistive switching effect of HfO2/Nb:SrTiO3 under the influence of nanodefects and varying atmospheric
conditions
03 August 2026 03:07:17
J. Vac. Sci. Technol. B (March 2025)
APPLIED PHYSICS LETTERS 111, 172404 (2017)
Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial
HfO2 thin films
Wenlong Liu,1 Ming Liu,1,a) Ruyi Zhang,1 Rong Ma,1 and Hong Wang1,2,a)
1
School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials,
Xi’an Jiaotong University, Xi’an 710049, China
2
Department of Materials Science and Engineering, Southern University of Science and Technology,
Shenzhen 518055, China
(Received 10 May 2017; accepted 14 October 2017; published online 26 October 2017)
Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were
deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition
(PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by
typical x-ray diffraction (XRD) h–2h scan and reciprocal space mapping (RSM). The results indi-
cate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in
the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase
in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO
thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy
behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization
of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation
magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness.
The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the varia-
tion in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferro-
magnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of
metal-oxide semiconductors with spintronics. Published by AIP Publishing.
[Link]
03 August 2026 03:07:17
Hafnia (HfO2) is known as an insulating oxide that which will make HfO2 thin films more attractive.13 To real-
exhibits outstanding chemical stability, high dielectric con- ize the above-mentioned goals, a large ferromagnetism and
stant (high k), and wide bandgap.1 It is considered to be one a tetragonal or cubic phase structure for HfO2 thin films
of the most promising high-k gate dielectrics to replace SiO2 are indispensable elements. Recently, a lot of experimental
in the application of metal-oxide-semiconductor field effect work has shown that magnetic ions (such as Fe and Ni)
transistors (MOSFETs).2 HfO2 has polymorphic structures, can enhance the ferromagnetism of HfO2 thin films.10,14
including one monoclinic phase, two orthorhombic phases, Meanwhile, anisotropic magnetization is also observed in
one tetragonal phase, and one cubic phase.3 Naturally, the Ni-doped HfO2 thin films.14 However, the relationship
monoclinic phase of HfO2 is the stable phase.4 However, the between the thickness of thin films and anisotropic magneti-
tetragonal and cubic phases are much more important in zation in epitaxial HfO2 thin films (especially in tetragonal
practical applications than the monoclinic phase,5 owing to HfO2 thin films) is still unclear. Thus, tetragonal HfO2 epi-
the tetragonal or cubic phases of HfO2 exhibiting higher k- taxial thin films with large ferromagnetism are required,
values than the monoclinic structure. According to the litera- which will be helpful for understanding the relationship
ture, the cubic/tetragonal phase HfO2 has been realized in Si, between the thickness and anisotropic magnetization of
SiO2/Si, and GeOx/Ge substrates.6–8 At room temperature, HfO2 epitaxial thin films. Therefore, the non-ferromagnetic
the tetragonal and cubic phase of HfO2 can be stabilized by tetragonal NdCaAlO4 (NCAO) substrate is chosen as the
ion substitution with other cation dopants, such as Y3þ or substrate, which possesses a moderate lattice mismatch with
Fe3þ.9,10 HfO2 films (lattice mismatch: 1.88%). Moreover, the con-
In 2004, Venkatesan et al. reported unexpected room-
centration of 5% Fe3þ ions is used for doping to stabilize the
temperature ferromagnetism in undoped monoclinic HfO2
tetragonal phase in HfO2 with larger magnetization.10,15
thin films.11 According to the traditional magnetism theory,
In this work, Fe-doped tetragonal Hf0.95Fe0.05O2 (FHO)
HfO2 should be non-magnetic due to either full or empty d
epitaxial thin films with various thicknesses have been grown
and f shells of Hf4þ and O2 ions.11 The unexpected ferro-
on (001) NCAO substrates by using pulsed laser deposition
magnetic behavior is named as “d0 ferromagnetism (ferro-
(PLD). The anisotropic magnetization with enhanced ferro-
magnetism with no d electrons).”12 So, the combination of
magnetism is observed in the FHO epitaxial thin films.
ferromagnetism with the high k properties should enable the
Meanwhile, the relationship between the film thickness and
integration of metal-oxide semiconductors with spintronics,
anisotropic magnetization of HfO2 epitaxial thin films has
been investigated.
a)
Authors to whom correspondence should be addressed: [Link]@[Link] The FHO thin films were fabricated on (001) single-
and hwang@[Link] crystalline NCAO substrates by using a KrF excimer PLD
0003-6951/2017/111(17)/172404/5/$30.00 111, 172404-1 Published by AIP Publishing.
172404-2 Liu et al. Appl. Phys. Lett. 111, 172404 (2017)
system (k ¼ 248 nm, frequency ¼ 5 Hz, and energy ¼ 650 mJ). {h00} peaks of h–2h XRD indicate the epitaxial growth of
The Fe-doped HfO2 ceramic target was prepared through the the thin films tentatively, including (h00), (0k0), and (00l)
conventional sintering method with Fe2O3 (99.99%) and peaks.18
HfO2 (99.99%) powders as raw materials at a molar ratio of To evaluate the epitaxial nature of the FHO/NCAO(001)
0.05:0.95. The deposition process was conducted in 150 thin films, the in-plane u scans are performed on the
mTorr oxygen, and the substrates were heated up to 680 C. FHO(202) and NCAO(204) peaks for the FHO-60 sample.
After the deposition, the FHO films were then cooled down to As shown in Fig. 1(d), the u scans from 45 to 315 dis-
room temperature at the rate of 30 C/min. The thicknesses of play only four sharp diffraction peaks with an even interval
prepared FHO thin films were 8 nm, 15 nm, 30 nm, and of 90 for both the FHO thin film and the NCAO substrate,
60 nm (marked as FHO-8, FHO-15, FHO-30 and FHO-60, suggesting that the FHO thin film epitaxially grows on the
respectively). The crystal structures and epitaxial nature of NCAO substrate. Meanwhile, the peak positions of the u
the FHO films were characterized by high resolution x-ray scans are 45 apart for the FHO thin film and the NCAO sub-
diffraction (HRXRD) using a PANalytical X’Pert MRD. The strate, indicating that the FHO film has a 45 rotation around the
magnetic properties of the FHO thin films were investigated (00l) direction between the basal plane of the FHO thin film and
by using a vibrating sample magnetometer (VSM). The chem- that of the NCAO substrate (NCAO substrate: a ¼ b ¼ 3.685 Å
ical bonding states of the films were investigated by X-ray and c ¼ 12.12 Å; HfO2 bulk material: a ¼ 5.115 Å). According
photoelectron spectroscopy (XPS, Kratos Ltd., XSAM800). to the relative directions of the FHO thin film and NCAO sub-
Figure 1(a) shows typical h–2h XRD patterns of the strate crystalline axes, the epitaxial relationship between FHO
FHO/NCAO(001) thin films with various thicknesses of 8, and NCAO is derived as [110]FHO//[100]NCAO and (001)FHO//
15, 30, and 60 nm. It is clear that the (00l) peaks from the (001)NCAO.19
FHO film and the NCAO substrate are observed in all the Figure 1(e) shows the x-ray reflectivity (XRR) of the
samples. Moreover, it is worth noting that the weak (h00) FHO-60 thin film. The thickness of the films can be calcu-
[(200) and (400)] peaks are also observed in the FHO-30 and lated by Parratt’s method from the XRR results.20 Then,
FHO-60 thin films and the intensities of (h00) peaks increase the deposition rate of the FHO thin film growth on the
with the increase in the thickness. The normalized 2theta pat- NCAO(001) substrate can be obtained.
terns (2h ¼ 32 –38 ) and rocking curve of the FHO (002) In order to study the strains and the crystallographic
03 August 2026 03:07:17
(the FWHM of all the FHO thin films is in the range of evolution in the FHO thin films with various thicknesses,
0.13–0.20 , and it decreases with the increase in the thick- the FHO(002)//NCAO(004) symmetric and FHO(204)//
ness.) also prove it, as shown in Figs. 1(b) and 1(c). The NCAO(118) and FHO(024)//NCAO ð118Þ asymmetric XRD
results of h–2h XRD patterns indicate that two sets of lattice reciprocal space maps (RSMs) have been measured. Figure
sites with two different crystal orientations [(001) and (100)] 2(a) shows the symmetric RSMs taken from around FHO(002)
in the FHO-30 and FHO-60 thin films exist. Moreover, the reflections of all the FHO films as well as their corresponding
intensity of (100) diffraction increases with the increase in NCAO substrates. It can be seen that the Qz values of the
the thickness, which should have a significant effect on FHO(002) peaks show a minor difference for all the FHO thin
anisotropic magnetization of the FHO thin films. The higher films, indicating that the thickness of FHO films has no
intensity of (100) crystal orientation observed in the thicker remarkable effect on the out-of-plane lattice parameter c
sample should contribute to more relaxed domain configura- [shown in Fig. 2(d)]. Moreover, we note that the intensity
tions.16 A more detailed explanation can be found in Ref. 16. change at about the mid distance (in Qz) between FHO(002)
This kind of phenomenon of (100)/(001)-oriented epitaxial and FHO(200) which appears as a reduction in the halo well
thin films is also observed in the PbTiO3 films, which is visible from sample FHO-15 indicates the presence of FHO
attributed to the in-plane tensile strain.17 In general, the (200) within the background. With the increase in the film
FIG. 1. XRD patterns of the FHO thin
films with various thicknesses. (a) 2h
¼ 10 –80 ; (b) normalized 2theta pat-
terns: 2h ¼ 32 –38 ; (c) Rocking curve
of the FHO(002); (d) u scans of the
FHO-60 thin film; (e) X-ray reflectivity
of the FHO-60 thin film.
172404-3 Liu et al. Appl. Phys. Lett. 111, 172404 (2017)
FIG. 2. The reciprocal space maps
(RSMs) of the FHO thin films with
various thicknesses as well as their
corresponding substrates taken around
(a) FHO(002)//NCAO(004), (b)
FHO(204)//NCAO(118), and (c)
FHO(024)//NCAO ð118Þ reflections;
(d) Calculated lattice parameters (in-
plane and out-of-plane) of the FHO
thin films.
thickness, the more relaxed domain configurations will appear cell volumes are obtained in the FHO-30 and FHO-60 thin
in the films due to strain relaxation.16 Then, the intensity of the films. The change in cell volumes can be ascribed to the oxy-
(100) diffraction direction increases with the increase in the gen vacancies (see below). Moreover, the calculated lattice
thickness, leading to the increase in the FHO(002) peak. This parameters a, b, and c show that all the FHO samples possess a
result is consistent with the analysis of typical h–2h XRD tetragonal phase structure.
patterns. The asymmetric RSMs taken from around the Figures 3(a)–3(d) show the in-plane and out-of-plane
FHO(204)//NCAO(118) and FHO(024)//NCAO ð118Þ reflec- magnetic hysteresis loops (M-H) of the FHO thin films with
tions are shown in Figs. 2(b) and 2(c). It is clear that the Qx various thicknesses. It can be seen from the M-H loops that
and Qy values of both the FHO(204) and FHO(024) peaks all the FHO thin films possess anisotropic magnetization
increase with the increase in the thickness, respectively, sug- behavior which was also observed in undoped and Ni-doped
HfO2 thin films.11,14 As shown, the in-plane saturation mag-
03 August 2026 03:07:17
gesting that both the in-plane lattice parameters a and b
decrease. The out-of-plane and in-plane lattice parameters (a, netization (Ms) is larger than that of the out-of-plane for all
b, c, and cell volume) of FHO thin films with various thick- the FHO thin films. This phenomenon is named d0 ferromag-
nesses are calculated by RSMs and illustrated in Fig. 2(d). netism.14 The highest in-plane and out-of-plane Ms values of
From the tendencies of curves in Fig. 2(d), it is found that the 53.14 and 32.88 emu/cm3 are obtained in the FHO-8 thin
in-plane lattice parameters a and b gradually decrease when film, respectively. Ms as a function of film thickness is
the thickness increases to 15 nm, but they show a minor differ- shown in Fig. 3(e) to characterize their magnetic anisotropy.
ence for FHO-30 and FHO-60 thin films. The results of RSMs It is clear that both the values of in-plane and out-of-plane
imply that the FHO films suffer an in-plane tensile strain and Ms increase with the decrease in the thickness, which sug-
the tensile strain gradually relaxed with the increase in the film gests that the change in in-plane and out-of-plane Ms of the
thickness. Meanwhile, from the calculated lattice parameters a, FHO thin films with various thicknesses is not driven by
b, and c, it is found that the FHO-8 thin film has the largest strain.21 The change in Ms can be ascribed to the defects
cell volume compared to other samples, while similar-sized (such as oxygen vacancy V••O and cation vacancy Fe0Hf or Fe00Hf )
FIG. 3. (a)–(c) In-plane and out-of-
plane magnetic hysteresis loops of the
FHO-8, FHO-15, FHO-30, and FHO-
60 samples, respectively; (d) and (e)
saturation magnetization (Ms) and
coercivity (MC) as a function of film
thickness.
172404-4 Liu et al. Appl. Phys. Lett. 111, 172404 (2017)
and variation of valence of Fe ions.22 The chemical and elec- scan also shows the presence of Al2s (substrate), Ar2p (etch-
tronic states of Fe ions in the FHO thin films are discussed ing), and Ag3d (silver colloid) elements, which come from
in the following. Moreover, the percentage value of the the substrate. Figure 4(b) shows the high-resolution XPS
(Ms-in-plane Ms-out-of-plane)/Ms-in-plane also decreases with spectra of Fe2p for the FHO/NCAO-8 and FHO/NCAO-60
the increase in the thickness, as shown in Fig. 3(e). The per- thin films; one can observe that Fe2p3/2 can be fitted by two
centage values of (Ms-in-plane Ms-out-of-plane)/Ms-in-plane are peaks at binding energies of around 709.2 eV (Fe2O3) and
38.12%, 34.95%, 34.48%, and 22.45% for the FHO-8, FHO- 711.4 eV (Fe3O4) for the FHO/NCAO-8 and 709.3 eV
15, FHO-30, and FHO-60 thin films, respectively, suggesting (Fe2O3) and 711.8 eV (Fe3O4) for the FHO/NCAO-60 sam-
that the anisotropic magnetization of the FHO thin films ple.26,27 The results of high-resolution XPS spectra of Fe2p
slowly weakens as the thickness increases. This result can be show that the Fe2þ state is lesser in the thicker FHO-60 sam-
attributed to the higher intensities of crystal orientations (100) ple than the FHO-8 sample. The more the Fe2þ ions are the
(see XRD analysis) in the thicker FHO thin films. Due to the more the oxygen vacancies will be in FHO thin films, which
strong in-plane anisotropic magnetization of the FHO thin will further enhance the magnetism.28 This result is consis-
films, the higher intensity the (100) orientation, the weaker tent with the above XRD result (the change in cell volumes).
the anisotropic magnetization in the thin films.23 Therefore, At the same time, the ionic superexchange between Fe3þ and
the minimum value of (Ms-in-plane Ms-out-of-plane)/Ms-in-plane Fe2þ can also enhance the magnetism of the thin films.25
is obtained in the FHO-60 sample. Additionally, the ferro- Figure 4(c) shows that the O1s peak is deconvoluted into
magnetic coercivity (MC) as a function of film thickness is three peaks, lower binding (LB) energy, medium binding
shown in Fig. 3(f). For the FHO thin films, MC is also aniso- (MB) energy, and higher binding (HB) energy for the FHO/
tropic and both the in-plane and out-of-plane MC increase NCAO-8 sample. However, for the FHO/NCAO-60 thin film
with the increase in the thickness, which can be attributed to [Fig. 4(c)], the high-resolution XPS spectra of O1s can be fit-
the misfit dislocations at the interface between the FHO thin ted by two peaks, LB and MB. LB, MB, and HB are attrib-
film and the NCAO substrate.24 For the thicker FHO thin uted to the contribution from the crystal lattice oxide ions,29
films, the higher intensity of the (100) crystal direction should oxygen vacancies,30 and surface adsorbed oxygen,31 respec-
have more misfit dislocations, causing more domain wall pin- tively. Therefore, the high-resolution XPS spectra of O1s
ning. Meanwhile, the strain relaxation can also induce the for- also prove that the percentage of the oxygen vacancy con-
03 August 2026 03:07:17
mation of dislocations at the film/substrate interface. centration of the FHO/NCAO-8 sample is higher than that of
It is well known that the chemical and electronic states the FHO/NCAO-60 sample, as calculated by the ratio of
of Fe ions have important effects on the magnetic properties. MB/(LB þ MB þ HB).32
On the one hand, the magnetic moments of Fe2þ and Fe3þ In summary, the FHO epitaxial thin films with various
are different.25 On the other hand, the Fe2þ ions could pro- thicknesses were deposited on (001)-oriented NCAO sub-
mote the production of oxygen vacancies in the samples, strates by using PLD technology. The epitaxial FHO films
which contributes to improving the magnetization. The show excellent crystal quality with a tetragonal phase. All
detailed chemical and electronic states of the FHO/NCAO- the FHO thin films exhibit strong in-plane anisotropic mag-
8 and FHO/NCAO-60 thin films were determined by x-ray netization behavior, and the highest in-plane and out-of-
photoelectron spectroscopy (XPS). Figure 4(a) shows the plane Ms values of 53.14 and 32.88 emu/cm3 have been
XPS survey spectra of the FHO/NCAO-8 and FHO/NCAO- obtained in the FHO-8 thin film, respectively. The aniso-
60 thin films after being etched for 20 s by the Arþ beam, tropic magnetization of the FHO thin films slowly weakens
which clearly shows the presence of Hf (4f, 4d, 4s, 5p and as the thickness increases. Meanwhile, the Ms values of in-
5s), O (1s and KL), Fe (2p and 3p), and C (1s). The wide plane and out-of-plane also decrease with the increase in the
FIG. 4. (a) XPS survey spectra; (b) and
(c) high-resolution Fe2p and O1s XPS
spectra of FHO/NCAO-8 and FHO/
NCAO-60 thin films, respectively,
after the Arþ beam etching for 20 s.
172404-5 Liu et al. Appl. Phys. Lett. 111, 172404 (2017)
13
thickness. The change in the anisotropic magnetization and O. E. Tereshchenko, V. A. Golyashov, S. V. Eremeev, I. Maurin, A. V.
Bakulin, S. E. Kulkova, M. S. Aksenov, V. V. Preobrazhenskii, M. A.
Ms is attributed to the crystal lattice and the variation of
Putyato, B. R. Semyagin et al., Appl. Phys. Lett. 107, 123506 (2015).
valence of Fe ions. 14
N. H. Hong, J. Sakai, N. Poirot, and A. Ruyter, Appl. Phys. Lett. 86,
242505 (2005).
15
This work was supported by the National Natural N. H. Hong, N. Poirot, and J. Sakai, Appl. Phys. Lett 89, 042503 (2006).
16
H. Nakaki, Y. K. Kim, S. Yokoyama, R. Ikariyama, and H. Funakubo,
Science Foundation of China (Nos. 61631166004, 61471290, Appl. Phys. Lett. 91, 112904 (2007).
51390472, and 51202185) and National 973 projects of China 17
T. Nakashima, D. Ichinose, Y. Ehara, T. Shimizu, T. Kobayashi, T.
(Nos. 2015CB654603 and 2015CB654903). It was also Yamada, and H. Funakubo, Appl. Phys. Lett. 110, 122902 (2017).
18
T. Shimizu, K. Katayama, T. Kiguchi, A. Akama, T. J. Konno, and H.
partially supported by the Fundamental Research Funds for
Funakubo, Appl. Phys. Lett. 107, 032910 (2015).
the Central University. 19
Y.-C. Liang and H.-Y. Lee, CrystEngComm 12, 3172–3176 (2010).
20
L. G. Parratt, Phys. Rev. 95, 359–369 (1954).
21
1 Y. J. Yang, M. M. Yang, Z. L. Luo, C. S. Hu, J. Bao, H. L. Huang, S.
Y. Q. Hu, C. H. Wang, H. Dong, R. M. Wallace, K. Cho, W. H. Wang, Zhang, J. W. Wang, P. S. Li, Y. Liu et al., J. Appl. Phys. 115, 173505
and W. C. Wang, ACS Appl. Mater. Interfaces 8, 7595–7600 (2016). (2014).
2
J.-W. Yoon, J. H. Yoon, J.-H. Lee, and C. S. Hwang, Nanoscale 6, 22
C. Martin, A. Maignan, M. Hervieu, C. Autret, and B. Raveau, Phys. Rev.
6668–6678 (2014). B 63, 174402 (2001).
3
Y. Wang, H. Wang, C. Ye, J. Zhang, H. B. Wang, and Y. Jiang, ACS 23
L. Klein, J. S. Dodge, C. H. Ahn, J. W. Reiner, L. Mieville, T. H. Geballe,
Appl. Mater. Interfaces 3, 3813–3818 (2011). M. R. Beasley, and A. Kapitulnik, J. Phys. Condens. Matter 8, 10111
4
M. H. Park, Y. H. Lee, H. J. Kim, Y. J. Kim, T. Moon, K. D. Kim, J. (1996).
M€uller, A. Kersch, U. Schroeder, T. Mikolajick, and C. S. Hwang, Adv. 24
R. Comes, M. Gu, M. Khokhlov, J. Lu, and S. A. Wolf, J. Magn. Magn.
Mater. 27, 1811–1831 (2015). Mater. 324, 524–527 (2012).
5
E. Hildebrandt, J. Kurian, and L. Alff, J. Appl. Phys. 112, 114112 (2012). 25
L. Bocher, E. Popova, M. Nolan, A. Gloter, E. Chikoidze, K. March, B.
6
K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 86, 102906 (2005). Warot-Fonrose, B. Berini, O. Stephan, N. Keller, and Y. Dumont, Phys.
7
S. Dey, K. Tapily, S. Consiglio, R. D. Clark, C. S. Wajda, G. J. Leusink, Rev. Lett. 111, 167202 (2013).
A. R. Woll, and A. C. Diebold, J. Appl. Phys. 120, 125304 (2016). 26
E. Paparazzo, J. Electron Spectrosc. Relat. Phemon. 43, 97 (1987).
8
R. Zhang, P.-C. Huang, N. Taoka, M. Yokoyama, M. Takenaka, and S. 27
G. C. Allen, M. T. Curtis, A. J. Hooper, and P. M. Tucker, J. Chem. Soc.
Takagi, Appl. Phys. Lett. 108, 052903 (2016). Dalton Trans. 0, 1525 (1974).
9 28
Z. D. Dohčević-Mitrović, N. Paunović, B. Matović, P. Osiceanu, R. A. Kania, S. Miga, E. Talik, I. Gruszka, M. Szubka, M. Savinov, J.
Scurtu, S. Askrabić, and M. Radović, Ceram. Int. 41, 6970–6977 (2015). Proklesk, and S. Kamba, J. Eur. Ceram. Soc. 36, 3369–3381 (2016).
10 29
T. S. N. Sales, F. H. M. Cavalcante, B. Bosch-Santos, L. F. D. Pereira, G. S. Bensaid and N. Russo, Catal. Today 176, 417 (2011).
03 August 2026 03:07:17
A. Cabrera-Pasca, R. S. Freitas, R. N. Saxena, and A. W. Carbonari, AIP. 30
F. Ibrahim, J. I. B. Wilson, and P. John, J. Non-Cryst. Solids 191, 200
Adv. 7, 056315 (2017). (1995).
11 31
M. Venkatesan, C. B. Fitzgerald, and J. M. D. Coey, Nature 430, 630 H. Dong, Z. H. Li, X. M. Xu, Z. X. Ding, L. Wu, X. X. Wang, and X. Z.
(2004). Fu, Appl. Catal., B 89, 551 (2009).
12 32
X. Y. Qiu, Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu, Appl. Phys. Lett. S. Chauhan, M. Kumar, S. Chhoker, S. C. Katyal, M. Jewariya, B. N.
89, 242504 (2006). Suma, and G. Kunte, Ceram. Int. 41, 14306–14314 (2015).