PTN30P03

-30V/-30A P-Channel Advanced Power MOSFET

Features
• - 4.5V Logic Level Control BVDSS -30 V
• PDFN3333 SMD Package ID -30 A
Applications RDSON@VGS=-10V 9 mΩ
• High Side Load Switch RDSON@VGS=-5V 13 mΩ
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PDFN3333
Order Information
Product Package Marking Packing
PTN30P03 PDFN3333 PTN30P03 5000PCS/Reel

Absolute Maximum Ratings

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

VGS Gate-Source Voltage ±20 V

V(BR)DSS Drain-Source Breakdown Voltage -30 V

TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 175 °C

IS Diode Continuous Forward Current TC -30 A

Mounted on Large Heat Sink

IDM Pulse Drain Current Tested (Sillicon Limit) TC =25°C -90 A

ID Continuous Drain current @VGS=10V TC =25°C -30 A

PD TA=25°C 3.5 W
Maximum Power Dissipation
Tc =25°C 32 W
EAS Avalanche Energy, Single Pulsed (Note 2) 64 mJ

R JA Thermal Resistance Junction−to−Ambient – Steady State (Note 1) 35 °C/W

Note :
1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [2 oz] including traces).

2. Limited by Tjmax, starting TJ = 25°C, L = 0.5mH, IAS = -16A, VGS =-10V. VDD=-24V Part not recommended for use above
this value.

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PTN30P03
-30V/-30A P-Channel Advanced Power MOSFET
Symbol Parameter Condition Min. Typ. Max. Unit

Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

Drain-Source Breakdown Voltage VGS=0V ID=-250 μA -30 -- -- V

V(BR)DSS
Zero Gate Voltage Drain current(Tc=25℃) VDS=-24V,VGS=0V -- -- -1 μA
IDSS
Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA
IGSS
VDS=VGS,ID=-
VGS(TH) Gate Threshold Voltage -1.0 -- -2.2 V
250μA

Drain-Source On-State Resistance note A VGS=-10V, ID=-15A -- 9 15 mΩ

RDS(ON)
Drain-Source On-State Resistance note A VGS=-4.5V, ID=-10A -- 13 20 mΩ
RDS(ON)
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) note B

Input Capacitance -- 3980 -- pF

Ciss
VDS=-15V,VGS=0V,
Output Capacitance -- 450 -- pF
Coss f=1MHz
Reverse Transfer Capacitance -- 420 -- pF
Crss
Total Gate Charge -- 81 -- nC
Qg
VDS=-15V,ID=-15A,
Gate-Source Charge
Q gs VGS=-10V
-- 12 -- nC

Gate-Drain Charge -- 9.7 -- nC

Qgd
Switching Characteristics note B

Turn-on Delay Time -- -- nS

t d(on) 17
VDD=-15V,
Turn-on Rise Time -- 21 -- nS
tr ID=-15A

Turn-Off Delay Time RG=3 Ω, -- 36 -- nS

t d(off)
VGS=-10V
Turn-Off Fall Time -- 15 -- nS
tf
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)

VSD Forward on voltage IS=-30A,VGS=0V -- -0.80 -1.2 V

Note:
A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%
B:Guranteed by design, not subject to production testing.

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 PTN30P03
-30V/-30A P-Channel Advanced Power MOSFET

Typical Electrical and Thermal Characteristics

ton toff
tr tf
td(on) td(off)

90% 90%

VOUT INVERTED
10% 10%

90%
VIN 50% 50%

10%
PULSE WIDTH

Figure 1 Switching Test Circuit Figure 2 Switching Waveforms

ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V)

Figure 3 Power Dissipation Figure 4 Safe Operation Area
Rdson On-Resistance(mΩ)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance

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 PTN30P03
-30V/-30A P-Channel Advanced Power MOSFET

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(mΩ)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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