Last Date of Submission:12/08/2026 by 12:00 Noon
Assignment: 1
1 a. Draw the basic construction of a p-channel JFET and explain its working.
b. Apply the proper biasing between drain and source and sketch the depletion region for
VGS=0V.
2 a. Determine VDSfor VGS= 0 V and ID= 6 mA using the characteristics of given Fig.
b. Using the results of part (a), calculate the resistance of the JFET for the region ID= 0 to
6 mA for VGS= 0 V.
c. Determine VDSfor VGS= -1 V and ID= 3 mA.
d. Using the results of part (c), calculate the resistance of the JFET for the region ID= 0 to
3 mA for VGS= -1 V.
e. Determine VDSfor VGS= -2 V and ID= 1.5 mA.
f. Using the results of part (e), calculate the resistance of the JFET for the region ID= 0 to
1.5 mA for VGS= -2 V.
g. Defining the result of part (b) as ro, determine the resistance for VGS= -1 V and compare
with the results of part (d).
3 What are the major differences between the collector characteristics of a BJT transistor and
the drain characteristics of a JFET transistor? Compare the units of each axis and the
controlling variable. How does ICreact to increasing levels of IBversus changes in IDto
increasingly negative values of VGS? How does the spacing between steps of IBcompare to
the spacing between steps of VGS? Compare VCsat to VPin defining the nonlinear region at
low levels of output voltage.
4 Given the characteristics of given Fig.:
a. Sketch the transfer characteristics directly from the drain characteristics.
b. Using given Fig. to establish the values of IDSSand VP, sketch the transfer characteristics
using Shockley’s equation.
c. Compare the characteristics of parts (a) and (b). Are there any major differences?
5 A p-channel JFET has device parameters of IDSS= 7.5 mA and VP= 4 V. Sketch the transfer
characteristics
6 Explain in your own words why the application of a positive voltage to the gate of an n-
channel depletion-type MOSFET will result in a drain current exceeding IDSS.
7 Given a depletion-type MOSFET with IDSS = 6 mA and VP = -3 V, determine the drain
current at VGS = -1, 0, 1, and 2 V. Compare the difference in current levels between -1 V
and 0 V with the difference between 1 V and 2 V. In the positive VGS region, does the drain
current increase at a significantly higher rate than for negative values? Does the ID curve
become more and more vertical with increasing positive values of VGS? Is there a linear or
a nonlinear relationship between ID and VGS? Explain.
8 Given the transfer characteristics of Enhancement-
Type MOSFET, determine VTand k and write the
general equation for ID.
9 The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30
mA. Determine VGS at this current level if k = 0.06 * 10-3A>V2 and VT is the maximum
value.
10 Sketch the curve of ID= 0.5 * 10-3(V2GS) and ID= 0.5 * 10-3(VGS- 4)2 for VGSfrom 0 V to 10 V.
Does VT= 4 V have a significant effect on the level of IDfor this region?
11 For the fixed-bias configuration, determine:
a. IDQand VGSQusing a purely mathematical approach.
b. Repeat part (a) using a graphical approach and
compare results.
c. Find VDS, VD, VG, and VSusing the results of part (a).
12 For the self-bias configuration,
a. Sketch the transfer curve for the device.
b. Superimpose the network equation on the same
graph.
c. Determine IDQand VGSQ.
d. Calculate VDS, VD, VG, and VS.
13 For the network, determine:
a. ID.
b. VDS.
c. VD.
d. VS.
14 For the network, determine:
a. VG.
b. IDQand VGSQ.
c. VDand VS.
d. VDSQ.
15 For the network, VD= 12 V. Determine:
a. ID.
b. VSand VDS.
c. VGand VGS.
d. VP
16 Determine VDand VGSfor the given network using
the provided information. Consider VGSQ =0 V
17 For the network, determine:
a. IDQ.
b. VGSQand VDSQ.
c. VDand VS.
d. VDS.