ELECTRONICS
12-PAGE REVIEW NOTES
Based on Electronic Devices and Circuit Theory by Robert L. Boylestad and
Louis Nashelsky
PAGE 1 — SEMICONDUCTOR FUNDAMENTALS
1. Semiconductor Materials
A semiconductor is a material whose electrical conductivity is between that
of a conductor and an insulator. The most commonly used semiconductor
materials are:
Silicon (Si) – most widely used in electronic devices.
Germanium (Ge) – used in some specialized applications.
Gallium Arsenide (GaAs) – used in high-frequency and optoelectronic
applications.
Valence and Conduction Electrons
Valence electrons are electrons involved in atomic bonding.
Conduction electrons are free to move and contribute to electrical current.
When sufficient energy is supplied, electrons can move from the valence
band to the conduction band.
2. Intrinsic Semiconductor
An intrinsic semiconductor is a pure semiconductor without intentional
impurities.
In an intrinsic semiconductor:
Electrons and holes are generated in pairs.
The number of free electrons is approximately equal to the number of holes.
Conductivity increases as temperature increases.
3. Doped Semiconductor
Doping is the process of adding impurities to a semiconductor to increase
and control its conductivity.
N-Type Semiconductor
N-type material is produced by adding donor impurities.
Examples:
Phosphorus
Arsenic
Antimony
In N-type material:
Electrons = majority carriers
Holes = minority carriers
P-Type Semiconductor
P-type material is produced by adding acceptor impurities.
Examples:
Boron
Aluminum
Gallium
In P-type material:
Holes = majority carriers
Electrons = minority carriers
4. PN Junction
A PN junction is formed when P-type and N-type semiconductor materials are
joined.
When the materials meet:
1. Electrons move from the N side toward the P side.
2. Holes move from the P side toward the N side.
3. Recombination occurs near the junction.
4. A depletion region is formed.
5. An internal electric field develops.
Forward Bias
P side → positive
N side → negative
Depletion region becomes narrower.
Current can flow easily.
Reverse Bias
P side → negative
N side → positive
Depletion region becomes wider.
Only a very small current normally flows.
Important Values
For basic analysis:
Silicon diode ≈ 0.7 V
Germanium diode ≈ 0.3 V
PAGE 2 — DIODES AND DIODE CIRCUITS
1. Diode
A diode is a two-terminal semiconductor device that primarily allows current
to flow in one direction.
Terminals:
Anode (A)
Cathode (K)
The cathode is usually identified by a band on the physical diode.
2. Diode Biasing
Forward Bias
A diode is forward biased when:
Anode is more positive than cathode.
The diode conducts current.
For a silicon diode:
VD ≈ 0.7 V
Reverse Bias
A diode is reverse biased when:
Cathode is more positive than anode.
Current is very small under normal operation.
3. Diode Models
Ideal Diode
Forward bias:
Acts like a short circuit.
Voltage across diode = 0 V.
Reverse bias:
Acts like an open circuit.
Current = 0 A.
Practical Diode Model
For a silicon diode:
VD ≈ 0.7 V
For a germanium diode:
VD ≈ 0.3 V
4. Diode Equation
The diode current can be represented by:
ID = IS(e^(VD/nVT) – 1)
Where:
ID = diode current
IS = reverse saturation current
VD = diode voltage
N = ideality factor
VT = thermal voltage
At room temperature:
VT ≈ 25.9 mV
5. Applications of Diodes
Diodes are commonly used for:
Rectification
Switching
Clipping
Clamping
Voltage regulation
Circuit protection
Signal detection
6. Testing a Diode
Using a multimeter’s diode-test function:
Good diode
Forward direction:
Usually gives a forward-voltage reading.
Reverse direction:
Usually shows OL or very high resistance.
Possible shorted diode
Very low reading in both directions.
Possible open diode
OL or very high reading in both directions.
PAGE 3 — RECTIFIERS AND FILTERS
1. Rectification
Rectification is the process of converting an AC signal into a pulsating DC
signal.
Main types:
1. Half-wave rectifier
2. Full-wave center-tapped rectifier
3. Bridge rectifier
2. Half-Wave Rectifier
A half-wave rectifier normally uses one diode.
During the positive half-cycle:
Diode conducts.
Output appears across the load.
During the negative half-cycle:
Diode is reverse biased.
Output is approximately zero.
Average DC Output
For an ideal half-wave rectifier:
VDC = Vm / π
Where:
Vm = peak input voltage.
Characteristics
Simple circuit
One diode
Low efficiency
Large ripple
Ripple frequency = f
3. Full-Wave Rectifier
A full-wave rectifier uses both halves of the AC waveform.
Average DC Output
For an ideal full-wave rectifier:
VDC = 2Vm / π
Characteristics
Uses both half-cycles.
Higher average output than half-wave.
Ripple frequency = 2f.
Easier to filter.
4. Bridge Rectifier
A bridge rectifier uses four diodes.
During each half-cycle:
Two diodes conduct.
Two diodes are reverse biased.
Advantages:
Does not require a center-tapped transformer.
Uses both halves of the input.
Good rectification efficiency.
In a practical bridge:
VOUT ≈ Vpeak – 2VD
For silicon diodes:
VOUT ≈ Vpeak – 1.4 V
5. Capacitor Filter
A capacitor filter reduces ripple.
The capacitor:
1. Charges near the peak voltage.
2. Supplies current to the load as the rectified voltage decreases.
3. Recharges when the next peak arrives.
Approximate ripple voltage:
Vr(pp) ≈ IL / (frC)
Where:
IL = load current
Fr = ripple frequency
C = capacitance
To Reduce Ripple
Increase capacitance.
Increase ripple frequency.
Reduce load current.
PAGE 4 — ZENER DIODES AND VOLTAGE REGULATION
1. Zener Diode
A Zener diode is designed to operate in the reverse-breakdown region.
Its main application is voltage regulation.
When operating properly:
VL ≈ VZ
Where:
VL = load voltage
VZ = Zener voltage
2. Zener Voltage Regulator
A basic Zener regulator consists of:
DC source
Series resistor
Zener diode
Load resistor
The resistor limits current.
Series Current
IR = (VS – VZ) / RS
The current divides between the Zener and the load:
IR = IZ + IL
Therefore:
IZ = IR – IL
3. Zener Power
Zener power is:
PZ = VZIZ
The Zener must not exceed its maximum power rating.
4. Series Resistor Power
Power dissipated by the resistor:
PR = IR²RS
Or:
PR = IR(VS – VZ)
5. Zener Regulation Conditions
The Zener must operate within its specified current range.
If Zener current becomes too low:
Regulation may be lost.
If Zener current becomes too high:
The Zener may be damaged.
6. Other Voltage Regulators
Other types include:
Series-pass regulators
Integrated voltage regulators
Adjustable regulators
Switching regulators
Important Reminder
A Zener diode is normally used in reverse bias for voltage regulation.
PAGE 5 — BIPOLAR JUNCTION TRANSISTORS (BJT)
1. BJT
A Bipolar Junction Transistor is a three-terminal semiconductor device.
Terminals:
Emitter (E)
Base (B)
Collector (C)
Types:
NPN
PNP
BJTs can be used as:
Amplifiers
Electronic switches
Oscillator components
Signal-processing devices
2. BJT Current Relationship
The transistor currents follow:
IE = IC + IB
Current gain:
Β = IC / IB
Therefore:
IC = βIB
Another relationship is:
Α = IC / IE
3. BJT Operating Regions
Cutoff
The transistor is essentially OFF.
Very small collector current.
Used as the OFF state of a switch.
Active Region
The transistor is used for amplification.
Base-emitter junction → forward biased
Collector-base junction → reverse biased
Saturation
The transistor is strongly ON.
Both junctions are forward biased.
Used as the ON state of a switch.
4. BJT Configurations
Common-Emitter (CE)
High voltage gain.
High current gain.
Commonly used for amplification.
Output is normally 180° out of phase with input.
Common-Collector (CC)
Also called an emitter follower.
Voltage gain approximately 1.
High input impedance.
Low output impedance.
Useful as a buffer.
Common-Base (CB)
Low input impedance.
High voltage gain.
Useful for high-frequency applications.
5. Transistor Biasing
Biasing establishes the transistor’s operating point or Q-point.
A proper bias circuit helps maintain stable transistor operation.
For a typical circuit:
VCE = VCC – ICRC – IERE
PAGE 6 — BJT AMPLIFIERS
1. Amplifier
An amplifier increases the amplitude of an electrical signal using energy
supplied by a DC power source.
A properly biased transistor operates in the active region for the expected
signal range.
2. Common-Emitter Amplifier
The common-emitter amplifier is one of the most widely used BJT amplifier
configurations.
Characteristics:
High voltage gain
High current gain
Significant power gain
Output is inverted relative to input
3. Small-Signal Parameters
Transconductance:
Gm = IC / VT
At room temperature:
VT ≈ 25.9 mV
Small-signal emitter resistance:
Re ≈ 25 mV / IE
Where IE is in amperes.
4. Emitter Resistor
An emitter resistor provides negative feedback.
Advantages:
Improves bias stability.
Reduces sensitivity to transistor β.
Improves linearity.
Disadvantage:
Can reduce AC voltage gain.
5. Bypass Capacitor
A capacitor may be connected across the emitter resistor.
Its purpose is to:
Maintain DC bias stabilization.
Reduce AC feedback.
Increase AC voltage gain.
6. Frequency Response
An amplifier does not have the same gain at all frequencies.
Low Frequencies
Gain decreases because of:
Coupling capacitors
Bypass capacitors
Midband
Gain is approximately constant.
High Frequencies
Gain decreases because of:
Internal transistor capacitances
Wiring capacitance
Stray capacitance
Important frequencies:
Lower cutoff frequency = fL
Upper cutoff frequency = fH
Bandwidth:
BW = fH – fL
PAGE 7 — FIELD-EFFECT TRANSISTORS (FET)
1. FET
A Field-Effect Transistor is a voltage-controlled device.
Main terminals:
Gate (G)
Drain (D)
Source (S)
One major characteristic is its very high input impedance.
2. JFET
JFET means Junction Field-Effect Transistor.
Types:
N-channel
P-channel
For an N-channel JFET:
Drain current flows through the channel.
Gate voltage controls the channel conductivity.
3. JFET Shockley Equation
For the appropriate operating region:
ID = IDSS[1 – (VGS/VGS(off))]²
Where:
ID = drain current
IDSS = maximum drain current at VGS = 0
VGS = gate-source voltage
VGS(off) = cutoff voltage
4. MOSFET
MOSFET means Metal-Oxide-Semiconductor Field-Effect Transistor.
The gate is insulated from the channel.
Therefore:
Gate current is extremely small.
Input impedance is very high.
Types include:
Enhancement MOSFET
Normally OFF at VGS = 0.
Requires appropriate gate voltage to conduct.
Depletion MOSFET
Can conduct at VGS = 0.
Gate voltage can reduce or increase channel conduction depending on
polarity.
5. BJT vs FET
BJT FET
Current-controlled Voltage-controlled
Base current required Very small gate current
Lower input impedance Very high input impedance
High transconductance Generally lower gate current
Used extensively in amplification Used extensively in switching and ICs
6. FET Applications
FETs are used in:
Amplifiers
Digital switching
Buffers
Oscillators
Power electronics
Integrated circuits
PAGE 8 — OPERATIONAL AMPLIFIERS
1. Operational Amplifier
An operational amplifier or op-amp is a high-gain differential amplifier.
It has:
Inverting input (−)
Non-inverting input (+)
Output
2. Ideal Op-Amp Characteristics
For an ideal op-amp:
Infinite voltage gain
Infinite input resistance
Zero input current
Zero output resistance
Infinite bandwidth in the ideal model
With negative feedback:
V+ ≈ V−
And:
I+ ≈ I− ≈ 0
3. Inverting Amplifier
The input signal is connected to the inverting terminal through an input
resistor.
Voltage gain:
Av = −Rf / Rin
The negative sign means:
Output is 180° out of phase with input.
4. Non-Inverting Amplifier
The signal is connected to the non-inverting input.
Voltage gain:
Av = 1 + Rf/R1
Characteristics:
Output is in phase with input.
High input impedance.
5. Voltage Follower
A voltage follower has:
Av ≈ 1
It is useful as a buffer.
Advantages:
High input impedance.
Low output impedance.
Prevents loading of the previous circuit.
6. Other Op-Amp Applications
Summing Amplifier
Combines multiple input signals.
Difference Amplifier
Amplifies the difference between two signals.
Comparator
Compares two voltages.
Integrator
Produces an output related to the integral of the input.
Differentiator
Produces an output related to the rate of change of the input.
7. Practical Limitations
Real op-amps have:
Limited bandwidth
Finite slew rate
Input offset voltage
Limited output current
Supply-voltage limitations
PAGE 9 — POWER AMPLIFIERS
1. Power Amplifier
A power amplifier is designed to deliver significant power to a load.
Applications include:
Speakers
Motors
Actuators
RF transmitters
Power-control circuits
Important considerations:
Output power
Efficiency
Distortion
Heat dissipation
2. Class A
The transistor conducts for approximately:
360°
Advantages:
Good linearity
Low distortion
Disadvantages:
Low efficiency
Significant power dissipation
3. Class B
Each transistor conducts for approximately:
180°
Usually uses a push-pull arrangement.
Advantages:
Higher efficiency than Class A.
Disadvantage:
Crossover distortion can occur.
4. Class AB
Conduction is slightly greater than 180°.
Advantages:
Reduced crossover distortion.
Better efficiency than Class A.
Commonly used in audio amplifiers.
5. Class C
The device conducts for less than 180°.
Commonly used in:
RF circuits
Tuned amplifiers
6. Power Equations
Electrical power:
P = VI
For a resistor:
P = V²/R
Or:
P = I²R
Also:
P = VRMS × IRMS
7. Push-Pull Amplifier
A push-pull output stage uses two devices.
One device supplies current during one part of the waveform while the other
supplies current during the opposite part.
8. Thermal Considerations
Power transistors can generate significant heat.
Protection includes:
Heat sinks
Proper ventilation
Thermal protection
Current limiting
Proper device ratings
PAGE 10 — FEEDBACK AND OSCILLATORS
1. Feedback
Feedback occurs when part of the output signal is returned to the input.
Two main types:
Negative feedback
Positive feedback
2. Negative Feedback
Negative feedback opposes the input signal.
Advantages:
Improves stability.
Reduces distortion.
Improves linearity.
Can increase bandwidth.
Makes gain less sensitive to component variations.
Negative feedback is commonly used in amplifiers.
3. Positive Feedback
Positive feedback reinforces the input signal.
It is commonly associated with:
Oscillators
Regenerative circuits
Some switching circuits
4. Oscillators
An oscillator generates a periodic waveform without requiring a periodic
input signal.
It converts DC power into an AC waveform.
Common oscillator types:
RC oscillator
LC oscillator
Crystal oscillator
Relaxation oscillator
5. Barkhausen Criterion
For sustained oscillation:
|Aβ| ≈ 1
And total phase shift should be:
0° or 360°
Where:
A = amplifier gain
Β = feedback factor
If loop gain is too small:
Oscillations die out.
If loop gain is properly maintained:
Sustained oscillations occur.
6. RC Oscillator
RC oscillators use resistors and capacitors to determine the oscillation
frequency.
Commonly used for:
Low-frequency signals
Audio-frequency applications
7. LC Oscillator
LC oscillators use inductors and capacitors.
Commonly used for:
High-frequency applications
RF circuits
8. Crystal Oscillator
Crystal oscillators use the mechanical resonance of a crystal.
Advantages:
High frequency stability
Accurate frequency generation
Applications:
Clocks
Microcontrollers
Communication systems
PAGE 11 — SPECIAL DIODES AND THYRISTOR DEVICES
1. LED
LED means Light-Emitting Diode.
An LED produces light when forward current passes through it.
Common applications:
Indicators
Displays
Lighting
Communication
A resistor is normally used to limit current.
LED Resistor
R = (VS – VF) / IF
Where:
VS = supply voltage
VF = LED forward voltage
IF = desired LED current
2. Photodiode
A photodiode converts light into electrical current.
Commonly operated in reverse bias.
Applications:
Light sensors
Optical communication
Automatic lighting
Measurement systems
3. Solar Cell
A solar cell converts light energy into electrical energy through the
photovoltaic effect.
Multiple solar cells can be connected to increase:
Voltage
Current
Power
4. Varactor Diode
A varactor diode is operated in reverse bias.
It behaves as a voltage-controlled capacitor.
Applications:
Frequency tuning
RF circuits
Voltage-controlled oscillators
Communication systems
5. Schottky Diode
A Schottky diode has:
Low forward voltage
Fast switching speed
Applications:
Power supplies
High-speed switching
Digital circuits
Rectifiers
6. SCR
SCR means Silicon Controlled Rectifier.
Terminals:
Anode
Cathode
Gate
The gate is used to trigger conduction.
Once turned ON, an SCR can remain conducting as long as the current
remains above its holding requirement.
Applications:
Motor control
Power control
Controlled rectifiers
AC/DC conversion
7. TRIAC
A TRIAC is a bidirectional thyristor device.
It can control current in both directions of an AC waveform.
Applications:
AC motor control
Lamp dimmers
Heater control
AC power regulation
8. DIAC
A DIAC is a bidirectional triggering device.
It is commonly used to trigger a TRIAC in AC control circuits.
PAGE 12 — QUICK REVIEW AND FORMULA SHEET
IMPORTANT CONCEPTS
Semiconductor
A material whose conductivity lies between a conductor and an insulator.
P-Type
Majority carrier → holes
Minority carrier → electrons
N-Type
Majority carrier → electrons
Minority carrier → holes
Forward-Biased Diode
Conducts current.
Silicon approximation → 0.7 V
Reverse-Biased Diode
Normally blocks current.
Small leakage current exists.
Rectifier
Converts AC into pulsating DC.
Filter
Reduces ripple in rectifier output.
Zener Diode
Used for voltage regulation when properly reverse biased.
BJT
Three terminals:
Emitter – Base – Collector
FET
Three main terminals:
Gate – Drain – Source
Transistor Regions
Cutoff → OFF
Active → Amplification
Saturation → ON
Op-Amp
With negative feedback:
V+ ≈ V−
I+ ≈ I− ≈ 0
Negative Feedback
Improves:
Stability
Linearity
Bandwidth
Positive Feedback
Used in:
Oscillators
Regenerative circuits
IMPORTANT FORMULAS
BJT
IE = IC + IB
Β = IC / IB
IC = βIB
Α = IC / IE
BJT Voltage
VCE = VCC – ICRC – IERE
Half-Wave Rectifier
VDC ≈ Vm / π
Full-Wave Rectifier
VDC ≈ 2Vm / π
Capacitor Filter
Vr(pp) ≈ IL / (frC)
Zener Regulator
IR = (VS – VZ) / RS
IR = IZ + IL
PZ = VZIZ
Electrical Power
P = VI
P = V²/R
P = I²R
Inverting Op-Amp
Av = −Rf/Rin
Non-Inverting Op-Amp
Av = 1 + Rf/R1
BJT Transconductance
Gm ≈ IC/VT
LED Resistor
R ≈ (VS – VF)/IF
Oscillator
|Aβ| ≈ 1
Total phase shift:
0° or 360°