SDP - Problem Sheet - 1
1. If the density of states related effective masses of electrons
and holes in a certain atom are approximately 1.02m and e
0.75m respectively, and the electron and hole drift
e
mobilities at room temperature are 1150 and 350 cm V s 2 -1 -1
respectively, calculate (i) intrinsic carrier concentration
(ii) intrinsic resistivity, of the given atom.(E = 0.72 eV) g
2. Find the resistance of 2 cm pure silicon crystal. What is the
3
resistance when the crystal is doped with phosphorous if
the doping is 1 part per billion (ppb). Given: Atomic
concentration of Silicon is 5 * 10 cm ; n = 1.45 * 10 cm ; 22 -3
i
10 -3
µ = 1350 cm V s and µ = 450 cm V s .
e
2 -1 -1
h
2 -1 -1
3. (a) A Silicon wafer is doped n-type with 10 atoms cm . 16 -3
Calculate the position of the Fermi level (E ) with respect F
to intrinsic Fermi level (E ) in intrinsic Si. (b) Above Fi
sample is further doped with 8 * 10 boron atoms cm . 18 -3
Calculate the position of the Fermi energy (E ) with F
respect to intrinsic Fermi energy(E ) of Si. (Assume T = Fi
300 K, n = 1.45 * 10 cm ).
i
10 -3
4. A Si sample is doped with 10 phosphorous atoms cm . At 16 -3
300K, calculate the electron and hole concentrations and
the position of Fermi level. Assume the distribution of
states in the conduction band is given by N(E)dE = 8 * 10 20
*(sqrt(E))dE cm . Calculate the number of electrons
-3
between the energy interval 1.9kT and 2.1kT above the
band edge E . C
5. In a Semiconductor sample, donor and acceptor levels are
0.4 eV apart from each other. If 70 percent of the acceptors
are ionized at 300K, evaluate the fraction of ionized
donors.
6. Calculate the density of states per unit volume for a free
electron with energies between 0 and 2 eV.
7. Determine the total number of energy states in silicon
between E and E + 2kT.
c c
8. Determine the probability of a state being occupied by an
electron at E , if the Fermi level lies 0.4 eV below the
c
conduction band energy.
9. Calculate the temperature at which there is a 1 percent
probability that a state 0.25 eV below the Fermi energy
level will not contain an electron. (Given E = 5 eV). F
10. The Fermi energy of copper at T = 300K is 7 eV. The
electrons in copper follow Fermi-Dirac distribution
function. (a) Find the probability of an energy level at 7.15
eV being occupied by an electron. (b) If E is assumed to be F
constant, repeat (a) at T = 1000K. (b) Repeat (a) for
E = 6.85 eV and T = 300K.
11. Calculate the position of Fermi level with respect to the
valence band energy in p-type GaAs at T = 300K. (Let N a
= 4.5 * 10 cm and N = 3.5 * 10 cm )
15 -3
d
14 -3
12. The carrier effective masses in a semiconductor are m = n
*
0.75m and m = 1.6m . Determine the position of the
0 p
*
0
intrinsic Fermi level with respect to the center of the gap at
T = 320K.
13. The intrinsic carrier concentration in silicon is to be no
greater than n = 1 * 10 cm . Assume
i
E = 1.12 eV.
12 -3
g
Determine the maximum temperature allowed for silicon.
14. Fermi level in n-type silicon at T = 300K is 250 meV
below the conduction band and 220 meV below the donor
level. Determine the probability of finding an electron (a)
in the donor level (b) in a state in the conduction band kT
above the conduction band edge.
15. Calculate the position of the Fermi energy level with
respect to intrinsic fermi level for donor concentrations of
N = 10 , 10 , 10 cm , at T = 300K.
d
14 16 18 -3
16. Determine the total number of energy states in GaAs
between E and E – kT at T = 300 K.
v v
17. If E = E , find the probability of a state being occupied at
F C
E = E + kT.
c
18. Four electrons exist in a one-dimensional infinite potential
well of width a = 10 Å. Assuming the free electron mass,
what is the Fermi energy at T = 0K.
19. Plot the function f(αa) = 9 sin αa/αa + cos αa for 0 ≤ αa ≤
6π. Also, given the function f(αa) = cos ka,
indicate the allowed values of αa which will satisfy this
equation.
20. What is the meaning of Fermi-Dirac probability function?
21. Calculate the thermal equilibrium electron and hole
concentration in Silicon at T = 300 K for the case when the
Fermi energy level is 0.22 eV below the conduction band
energy E . c
22. For the above problem, calculate the intrinsic carrier
concentration (E = 1.12 eV). g
23. Calculate the electron concentration using the Fermi-Dirac
integral. (Given η = 2 and F (η ) = 2.3)
F 1/2 F
24. (a) Determine the values of n and p for silicon at T = 300
0 0
K if the Fermi energy is 0.22 eV above the valence band
energy. (b)Assume E = E . Determine p .
F v 0
25. Semiconductor material is doped at N =2*10 cm , N =0,
d
13 -3
a
and the intrinsic carrier concentration is n =2*10 cm . i
13 -3
Assume complete ionisation. Determine the thermal
equilibrium majority and minority carrier concentrations.