Digital IC Design using VLSI Techniques

Course Objectives:
1. To understand the fundamentals of microelectronic fabrication, semiconductor
materials, crystal growth, wafer processing, and cleanroom practices used in VLSI
manufacturing.
2. To analyze lithography, process integration, CMOS fabrication technologies, and
circuit manufacturing techniques employed in modern integrated circuit production.
3. To explore thin-film deposition, epitaxial growth, MEMS fabrication, packaging, and
interconnection technologies for advanced VLSI systems.
4. To develop knowledge of nanoscale device characterization techniques and their
applications in evaluating the structural, electrical, and optical properties of
semiconductor devices.

Unit – 1 9 Hrs
Introduction to Microelectronic Fabrication and Materials - Semiconductor
substrate: Crystal structure, Crystal defects, Crystal growth, Wafer fabrication and basic
properties of Silicon Wafers, Wafer cleaning, and native oxide removal, Substrates beyond
Silicon, Surface reactions, Dopants, Defects in epitaxial growth, Clean Room, and Safety
requirements. Diffusion, Thermal Oxidation, Ion implantation, Etching.

Unit – 2 9 Hrs
Mask Fabrication and Advanced Lithography Techniques - Overview, Optical
lithography, Photoresist, Mask Development, Patterning Strategies, Electron beam
lithography process, EUV Lithography, X-ray lithography, and Other advanced lithography
systems

Process Integration - Contacts and metallization: Junction and oxide isolation, Si on

insulator, Schottky and Ohmic contacts, Multilevel metallization. CMOS technologies:
Device behavior, Basic 3 µm technologies, Device scaling. Circuit Manufacturing: Yield,
Particle control, Design of experiments, computer-integrated manufacturing.

Unit – 3 9 Hrs
Thin-Film Technologies - Physical Vapor Deposition: Evaporation Systems, Sputtering
systems, and state-of-art Systems Chemical Vapor Deposition: CVD system, Advanced CVD
systems: LPCVD, UHCVD, AACVD, and advanced systems Epitaxial Deposition: MOCVD,
MBE, and CBE. Solution-Based Deposition Techniques: Electrodeposition, Spin Casting,
Printing, Layer-by-Layer Deposition, Colloidal Synthesis.
Unit – 4 9 Hrs
Mems Fabrication Techniques - Silicon Pressure Sensors, Micro-Electro-Mechanical
Systems, Micromachining Techniques, Isotropic Etching and Anisotropic Etching, Wafer
Bonding, and LIGA Processes.

Interconnects, Bonding, And Packaging- Metallization, Silicides, CVD Tungsten

Plug Process, Gold Wire Bonding and Other Bonding Technologies, Package Types,
Assembly Techniques, Package Fabrication Technology, Package Design Considerations.

Unit – 5 9 Hrs
Nanoscale Device Characterization Techniques - X-ray diffraction, X-ray
photoelectron Spectroscopy, Spectroscopic Ellipsometry, Field Emission Scanning Electron
Microscope, Transmission Electron Microscope, Atomic Force Microscope, Raman
Spectroscopy, UV-Vis Measurement, Photo-Luminescence, Hall Measurement, Capacitance
Voltage Measurement and Current-voltage measurement.
Text Book:
1. Gandhi, S. K. (2017). VLSI fabrication principles: Silicon and gallium arsenide (2nd
ed.). Wiley India Pvt. Ltd.
2. Sze, S. M., & Nair, K. K. (2019). Semiconductor device fabrication (Indian ed.).
McGraw Hill Education India.
3. Veeraraghavan, S. (2014). Fundamentals of semiconductor fabrication and process
technology. Tata McGraw-Hill Education.
4. Baligar, V. C., & Murthy, C. S. R. (2016). VLSI design and fabrication technology.
Universities Press.

Course Outcomes (CO)

Upon successful completion of the course, students will be able to:
CO1: Explain the principles of semiconductor materials.
CO2: Apply lithography concepts, mask fabrication techniques.
CO3: Analyze CMOS technology scaling, device behavior, metallization, and manufacturing
challenges.
CO4: Evaluate various thin-film deposition and epitaxial growth techniques.
CO5: Demonstrate understanding of MEMS fabrication processes.
CO6: Utilize advanced nanoscale characterization techniques.
 Introduction to Semiconductor Devices and VLSI Technology

Course Learning Objectives:

After completing this course, students will be able to:
1. Understand the fundamentals of semiconductor materials, crystal growth techniques,
wafer fabrication, and cleaning processes used in VLSI technology.
2. Explain the operation and characteristics of semiconductor devices and the fabrication
processes involved in MOS-based integrated circuits.
3. Analyze VLSI design methodologies, MOS logic structures, and memory elements
used in digital integrated circuit design.
4. Design and evaluate CMOS combinational and sequential logic circuits using
appropriate simulation and verification techniques.

Unit 1 09 hrs
Introduction to VLSI Technology and Semiconductor Materials
Overview of VLSI technology and its applications. Semiconductor fundamentals.
Semiconductor materials: Silicon (Si), Binary Compound Semiconductors (GaAs, GaN).
Crystal structures and properties. Growth of bulk silicon single crystals using the Czochralski
(CZ) technique. Doping during crystal growth, distribution of dopants, effective segregation
coefficient. Float Zone (FZ) crystal growth technique. Growth of GaAs single crystals using
the Bridgman–Stockbarger technique.
Unit 2 09 hrs
Wafer Processing and Semiconductor Devices
Wafer fabrication and wafer cleaning technologies. Basic concepts of wafer cleaning, wet
cleaning techniques, dry cleaning techniques. Semiconductor devices: PN junction diode,
Bipolar Junction Transistor (BJT), and Metal Oxide Semiconductor (MOS) devices. Basic
operation and characteristics of semiconductor devices.
Unit 3 09 hrs
Technology and VLSI Fabrication Processes
MOS transistors: Structure, operation, and characteristics. Importance of MOS technology in
VLSI design. Diffusion and ion implantation techniques for doping. Thermal oxidation.
Metallization processes. Packaging fundamentals. Device scaling and integration
considerations in modern VLSI technology.
Unit 4 09 hrs
VLSI Design Methodology and MOS Logic Structures
VLSI design methodologies. Design abstraction levels: Behavioral, Structural, and Dataflow
modeling. Device-level and gate-level design approaches. MOS structures: NMOS, PMOS,
and CMOS. Characteristics of MOS devices including power consumption and device
density. Logic devices using MOS technology: Registers, ROM, and RAM.

Unit 5 09 hrs
CMOS Logic Design and Verification
CMOS inverter and its characteristics. CMOS circuit layout considerations. Introduction to
simulation and verification techniques for devices and circuits. Combinational CMOS logic
design: AND, OR, NOT, NAND, NOR, XOR gates, Half Adder and Full Adder. Sequential
CMOS logic design: Flip-Flops, Counters, and Registers.

Course Outcomes (COs)

Upon successful completion of the course, the student will be able to:
CO1: Explain semiconductor materials, crystal growth methods, doping mechanisms, and
wafer processing techniques used in VLSI fabrication.
CO2: Describe the structure, operation, and characteristics of PN junction diodes, BJTs,
MOS devices, and MOS transistors.
CO3: Apply diffusion, ion implantation, oxidation, metallization, and packaging concepts in
the fabrication of VLSI circuits.
CO4: Analyze VLSI design methodologies, MOS structures (NMOS, PMOS, CMOS), and
memory architectures such as ROM and RAM.
CO5: Design CMOS-based combinational logic circuits including logic gates, half adders,
and full adders.
CO6: Design and evaluate CMOS sequential circuits such as flip-flops, counters, and
registers using simulation and verification techniques.

References Books
1. Ghandhi, S. K. (2008). VLSI fabrication principles: Silicon and gallium arsenide (2nd
ed.). Wiley India Pvt. Ltd.
2. Kang, S. M., & Leblebici, Y. (2015). CMOS digital integrated circuits: Analysis and
design (4th ed.). McGraw-Hill Education.
3. Weste, N. H. E., & Harris, D. (2015). CMOS VLSI design: A circuits and systems
perspective (4th ed.). Pearson Education India.
 4. Neamen, D. A. (2012). Semiconductor physics and devices (4th ed.). McGraw-Hill
Education.

IP, Compliance, and Regulatory Strategy for Electronics

Course Objectives
1. To understand Intellectual Property (IP) rights and their significance in the electronics
industry.
2. To gain knowledge of national and international regulatory frameworks governing
electronic products.
3. To analyze compliance requirements, certification procedures, and quality standards
applicable to electronics manufacturing.
4. To develop strategies for managing IP portfolios, regulatory risks, and product
compliance throughout the product lifecycle.

Unit – 1 (09 Hrs)

Introduction to Intellectual Property in Electronics
Overview of Intellectual Property (IP). Importance of IP in electronics innovation and
product development. Types of IP: Patents, Copyrights, Trademarks, Industrial Designs,
Trade Secrets. Patentability criteria. Patent search and patent filing process. Technology
transfer and licensing agreements. IP infringement and dispute resolution.

Unit – 2 (09 Hrs)

Electronics Standards and Regulatory Frameworks
Introduction to regulatory compliance in electronics. National and international regulatory
bodies. Indian regulatory framework: BIS, WPC, TEC, STQC, MeitY. Global standards and
regulations: IEC, ISO, FCC, CE Marking, UL Standards. Product safety regulations and
conformity assessment procedures.

Unit – 3 (09 Hrs)

Environmental and Sustainability Compliance
Environmental regulations in electronics manufacturing. Restriction of Hazardous Substances
(RoHS). Waste Electrical and Electronic Equipment (WEEE). Registration, Evaluation,
Authorization and Restriction of Chemicals (REACH). Eco-design principles. Green
electronics and sustainable product development. Circular economy concepts in electronics.
Unit – 4 (09 Hrs)
Product Certification, Testing, and Quality Compliance
Product certification requirements. BIS Compulsory Registration Scheme (CRS). EMC/EMI
compliance testing. Safety testing and reliability assessment. Documentation requirements for
certification. Quality management systems: ISO 9001, ISO 14001. Audit preparation and
compliance management systems.

Unit – 5 (09 Hrs)

IP Management and Regulatory Strategy
IP portfolio management. Patent landscaping and freedom-to-operate analysis. Regulatory
risk assessment. Compliance planning during product development. Product recalls and
corrective actions. Global market entry strategies. Case studies on IP disputes, certification
failures, and compliance challenges in electronics industries.

Course Outcomes (COs)

student successful completion of the course, students will be able to:
CO1: Explain the fundamentals of intellectual property rights and their applications in the
electronics industry.
CO2: Describe national and international regulatory frameworks, standards, and certification
requirements applicable to electronic products.
CO3: Apply compliance requirements related to safety, quality, and environmental
regulations in electronics product development.
CO4: Analyze certification processes, testing procedures, and quality management systems
used in electronics industries.
CO5: Evaluate environmental compliance requirements including RoHS, WEEE, and
REACH for sustainable electronics manufacturing.
CO6: Develop IP management and regulatory strategies to support innovation, market
access, and legal compliance in electronics businesses.

Text Books
1. Ganguli, P. (2001). Intellectual property rights: Unleashing the knowledge economy.
Tata McGraw-Hill Publishing Company.
2. Narayanan, P. (2017). Intellectual property law (5th ed.). Eastern Law House.
3. Agarwal, V. K. (2019). Quality control and reliability engineering. Khanna
Publishers.
4. Bhat, V. (2018). Total quality management. Himalaya Publishing House.