SEMICONDUCTOR DIODE CHARACTERISTICS
OBJECTIVE:
Observe forward bias characteristics: To measure the relationship between the forward
voltage(Vf) and forward current (If) and to determine the knee voltage (cut in voltage) at
which the diode begins to conduct significantly.
THEORY:
The V–I characteristics of a diode represent the relationship between the voltage applied
across. the diode and the current flowing through it
When no external voltage is applied, the circuit is effectively open because the potential
barrier at the p–n junction prevents charge carriers from crossing the junction. Therefore, no
current flows through the diode.
When the P-type (anode) is connected to the positive terminal and the N-type (cathode) is
connected to the negative terminal of the supply, the diode is said to be in forward bias. In this
condition, the potential barrier across the junction is reduced. As the forward voltage increases to
a certain level (called the threshold voltage), the potential barrier is eliminated, allowing current
to flow through the diode and the external circuit. The diode is then said to be in the ON state.
The current increases rapidly with a small increase in forward voltage.
When the N-type (cathode) is connected to the positive terminal and the P-type (anode) is
connected to the negative terminal of the supply, the diode is said to be in reverse bias. In this
condition, the potential barrier across the junction increases, which results in a very high junction
resistance. Only a very small current, known as reverse saturation current, flows due to minority
charge carriers. The diode is said to be in the OFF state.
Thus, a p–n junction diode allows current to flow only in one direction and blocks it in
the opposite direction.
APPARATUS/EQUIPMENT:
[Link] Device Range Rating Quantity
1 Regulated power supply voltage 0-30V 1
2 Voltmeter 0-1V or 0-20V 1
3 Ammeter 0-10mA.200mA 1
4 Connecting wires and a breadboard 1
5 Diode Ln4007.OA79 1
6 Resistor 1k 1
CIRCUIT DIAGRAM: FORWARD BIAS
PROCEDURE:
1. The circuit was connected as shown in Figure 1, using a regulated power supply (RPS),
a diode, an ammeter, a voltmeter, and a resistor.
2. The anode (A) and cathode (K) terminals of the diode were identified, and the diode
was connected in the correct orientation.
3. The ammeter was connected in series with the diode and resistor to measure the current
flowing through the circuit.
4. The voltmeter was connected in parallel across the diode to measure the voltage drop
across it.
5. The resistor (1 kΩ) was connected in series to limit the current in the circuit.
6. The power supply was initially set to zero voltage before switching on the circuit.
7. The supply voltage was gradually increased in small steps, and the corresponding
voltage across the diode and current through the circuit were recorded.
8. Care was taken to ensure that the current did not exceed the specified limit of the
ammeter (0–100 mA).
9. The readings of voltage and current were noted for each increment of the supply
voltage.
10. After completing the measurements, the power supply was reduced to zero and the
circuit was switched off.
11. The recorded readings were later used to plot the V-I characteristics of the diode.
Observation and data:
APPLIED VOLTAGE(V) VOLTAGE ACROSS CURRENT THROUGH
DIODE(V) DIODE(A)
0 0 0
0.1 0.1 0
0.2 0.2 0
0.3 0.3 0
0.4 0.4 0.01
0.5 0.5 0.04
0.6 0.6 0.1
0.7 0.7 0.3
0.8 0.7 0.5
0.9 0.7 0.7
1 0.7 0.9
2 0.7 1
3 0.7 1.6
4 0.7 2.4
5 0.7 3.3
6 0.7 3.5
7 0.7 4.3
8 0.7 5
9 0.7 5.6
10 0.7 6.2
11 0.7 7
12 0.7 7.5
13 0.7 8.3
14 0.7 9
15 0.7 10
VIVA QUESTIONS:
1. What is P-N junction diode?
A P–N junction diode is a semiconductor device formed by joining P-type and N-
type materials. It allows current to flow in one direction (forward bias) and blocks it
in the opposite direction (reverse bias).
2. What is doping, and why is it necessary?
Doping is the process of adding impurity atoms to a pure semiconductor to
increase its electrical conductivity.
It is necessary to:
Create charge carriers (electrons or holes)
Control conductivity
3. Difference between P-type and N-type semiconductor materials?
P-type N-type
Doped with trivalent impurities Doped with pentavalent
impurities
Majority carriers: holes Majority carriers: electrons
Minority carriers: electrons Minority carriers: holes
Example: boron Example: Phosphorus
4. What is the diode equation?
5. What is an ideal diode?
An ideal diode is a theoretical device that conducts perfectly in forward
bias (zero resistance), Blocks completely in reverse bias (infinite resistance), and
has no power loss.
6. Define the depletion region of a diode.
The depletion region is the area around the P–N junction where mobile
charge carriers are absent. It acts as a barrier that prevents current flow in
reverse bias.
7. What is transition (space charge) capacitance?
Transition capacitance is the capacitance of a reverse-biased diode caused
by the depletion region acting like an insulator between two conductive
regions. It decreases as reverse voltage increases.
8. Is the V–I relationship of a diode linear or exponential?
The V–I relationship of a diode is exponential, not linear. Current
increases rapidly after the threshold voltage (~0.7 V for silicon).
Theoretical comparison:
Expected Behavior:
A silicon diode typically conducts at about 0.7 V
After this, the current increases rapidly (exponential region)
Observed Behavior:
Current starts increasing noticeably at 0.4–0.5 V
Voltage across the diode becomes nearly constant at 0.7 V
Current increases with applied voltage → matches theory
Graph:
Conclusion:
The experiment was carried out to study the V–I characteristics of a silicon diode under
forward bias conditions. It was observed that the diode allowed negligible current to flow at low
voltages, but began to conduct significantly after the applied voltage reached approximately 0.7
V, which is consistent with theoretical expectations. Beyond this threshold, the current increased
rapidly while the voltage across the diode remained nearly constant. The obtained results closely
followed the expected non-linear behavior of a semiconductor diode, with minor deviations
attributed to experimental errors such as instrument inaccuracies and component tolerances.
Overall, the characteristics of the diode were successfully verified, and the objectives of the
experiment were achieved.