JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP75N80 N-Channel Power MOSFET TO-220-3L
DESCRIPTION
The CJP75N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and
1. GATE
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications. 2. DRAIN
3. SOURCE
FEATURE
Advanced trench process technology
Special designed for convertors and power controls
High density cell design for ultra low RDS(on)
Fully characterized avalanche voltage and current
Fast switching
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source voltage VDS 75
V
Gate-Source Voltage VGS ±20
Continuous Drain Current ID 80
A
Pulsed Drain Current (note1) IDM 320
Power Dissipation (note 2 , Ta=25℃) 2 W
PD
Maximum Power Dissipation (note 3 , Tc=25℃) 170 W
Single Pulsed Avalanche Energy(note4) EAS 580 mJ
Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W
Junction Temperature Tj 150
℃
Storage Temperature Tstg -55 ~+150
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. This test is performed with no heat sink at Ta=25℃
3. This test is performed with infinite heat sink at Tc=25℃
4. EAS condition: Tj=25℃,VDD=37.5V,VGS=10V,L=0.5mH,Rg=25Ω.
E,Jul,2013
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Static characteristics
Drain-source breakdown voltage BVDSS VGS = 0V, ID =250µA 75
V
Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =250µA 2.0 4.0
Zero gate voltage drain current IDSS VDS =75V, VGS =0V 1 µA
Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA
Drain-source on-state resistance (note 1) RDS(on) VGS =10V, ID =40A 10 mΩ
Forward transconductance (note 1) gFS VDS =10V, ID =40A 60 S
Dynamic characteristics (note 2)
Input capacitance Ciss 4400
Output capacitance Coss VDS =25V,VGS =0V,f =1MHz 340 pF
Reverse transfer capacitance Crss 260
Switching characteristics (note 2)
Turn-on delay time td(on) 17.8
Rise time tr VDD=30V, ID=2A,RL=15Ω, 11.8
ns
Turn-off delay time td(off) VGS=10V,RG=2.5Ω 56
Fall Time tf 14.6
Total gate charge Qg 100
Gate-source charge Qgs VDS =30V,VGS =10V,ID =30A 20 nC
Gate-drain charge Qgd 30
Source-Drain Diode characteristics
Diode forward current IS 80
A
Diode pulsed forward current ISM 320
Diode Forward voltage (note 1) VSD VGS =0V, IS=40A 1.2 V
Diode reverse recovery time (note 2) trr 36 ns
IF=75A,di/dt=100A/µs
Diode reverse recovery charge (note 2) Qrr 56 nC
Notes: 1. Pulse Test: Pulse Width≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
E,Jul,2013