Module-1
Dr B Lakshmi
SENSE
Introduction
• Bipolar Junction Transistor (BJT) is composed of two PN junctions
• Current is due to transport of both electrons and holes
• Two types of BJT
• NPN
• PNP
Structure of BJT
Modes of operation
Current flow in npn transistor
Structure of actual transistor
Current-Voltage characteristics
Summary of BJT I-V relationship in active
mode
Collector base reverse current
• ICBO is the reverse current flowing from collector to base with emitter
open circuited
• Usually in the nano amp range
• Its value is dependent on VCB
• Strongly depends on temperature, approximately doubling for every
10o C rise
Graphical representation of transistor
characteristics
BJT in Amplifier Design
• BJT functions as a voltage controlled current source
(VCCS): base emitter voltage vBE controls collector
current iC
• VCCS can serve as a trans conductance amplifier-
whose i/p signal is voltage and o/p signal is current
• Converting trans conductance amplifier to voltage
amplifier is to pass the o/p current thro’ a resistor and
take the voltage across the resistor
Simple BJT amplifier
BJT biasing
Small signal voltage gain
• Gain is negative signifying that the amplifier is
inverting (i.e) 180ο phase shift b/w i/p and o/p
• Gain is proportional to the collector bias current
IC and the load resistance RC
Common Emitter circuit
BJT amplifier circuit
• Small signal i/p resistance b/w base and emitter, looking into the
base is denoted by rπ
• Emitter current and i/p resistance at emitter
Hybrid π model
High Frequency Hybrid π model
• It includes capacitive effects: emitter base
capacitance Cπ (Cde+Cje) and collector base
capacitance Cμ
• Resistor rx is added to model the resistance of the
silicon material of the base region
• rx<<rπ, its effect is negligible at low frequencies
Bode plots of short circuit gain
Variation of fT with Ic
Frequency Response of amplifier
Three Frequency bands
• Coupling capacitors and bypass capacitors are acting as perfect
short circuits at all frequencies
• Internal capacitances act as open circuits at all frequencies
• Gain is almost constant over a wide frequency band called
midband
• Gain falloff in LF band is that though external capacitors are
large, as the frequency is reduced, their impedance increase and
they no longer act as short circuits
• Gain falls off in HF band as a result of internal capacitances, their
impedance decrease at HF, no longer act as open circuits
• Midband is the useful frequency band of the amplifier
Gain =AM/√2
• Amplifier bandwidth or 3-dB bandwidth is defined as
the difference between the lower (fL) and upper or
higher (fH) 3-dB frequencies
BW=fH-fL
fL<<fH
BW= fH
Gain–bandwidth product is defined as
GB=AMBW
Frequency Response of CE amplifier
Coupling and Load capacitors
Small signal equivalent circuit
MOS structure
fig6_2_1
• Shown is the semiconductor substrate with a thin oxide layer and a top
metal contact, also referred to as the gate.
• A second metal layer forms an Ohmic contact to the back of the
semiconductor, also referred to as the bulk.
• The structure shown has a p-type substrate.
• We will refer to this as an n-type MOS capacitor since the inversion
layer contains electrons.
MOSFET
N-channel MOS transistor: VGS > 0 and VDS=0
N-channel MOS transistor: VGS > 0 &VDS > 0
Channel is pinched off near the drain
MOSFET with gate voltage zero
• The gate voltage is equal to zero while the P-type
substrate and the source are grounded
• The drain is connected to a positive voltage
• Since the source and the substrate are at the same
potential there is no current flow in the source-
substrate junction
• The drain-substrate junction is reverse biased and
except for a small negligible reverse leakage current no
current flows in that junction either
• Under these conditions there is no channel formation,
and therefore, no current flow from source to drain.
MOSFET current vs voltage characteristics
MOSFET as Amplifier
Biasing MOSFET for Linear Amplification
Small Signal Voltage Gain
Unity gain Bandwidth
Common source amplifier