Scribd
Upload
3 views6 pages

FET Questions

The document contains a series of questions related to FET circuits and MOSFET analysis, requiring calculations of node voltages, resistor values, and voltage gains. It specifies parameters for various transistors and asks for design considerations under certain conditions. The tasks involve both theoretical and practical aspects of analog electronics, focusing on circuit performance metrics.

Uploaded by

soylehafiz
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
3 views6 pages

FET Questions

The document contains a series of questions related to FET circuits and MOSFET analysis, requiring calculations of node voltages, resistor values, and voltage gains. It specifies parameters for various transistors and asks for design considerations under certain conditions. The tasks involve both theoretical and practical aspects of analog electronics, focusing on circuit performance metrics.

Uploaded by

soylehafiz
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EEE 212 Analog Electronics I

FET Questions

1. In the circuits shown in Fig. P5.55, transistors are characterized by │Vt│=1 V, k’(W/L) = 4 mA/V2,
and λ = 0.
(a) Find the labeled voltages V1 through V7.
(b) In each of the circuits, replace the current source with a resistor. Select the resistor value to
yield a current as close to that of the current source as possible.

2. For each of the circuits in Fig. P5.56, find the labeled node voltages. For all transistors, k’n(W/L)
= 0.5 mA/V2, Vt= 0.8 V, and λ = 0.
The MOSFET in the circuit given below has Vt = 1 V, k’n(W/L) = 1 mA/V2, and VA = 40 V.

(a) (10 points) Find the values of RS and RD, so that VDS is chosen as one-third of VDD power
supply, and the DC power dissipated on RS is limited to 1 mW. Find also the maximum possible
swing at the drain.

(b) (15 points) If terminal Z is grounded, terminal X is connected to a signal source having a
resistance of 1MΩ, find the voltage gain from signal source to Y, input and output resistances with
Y open-circuited.

(c) (10 points) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited.
What is the output resistance of the source follower?

(d) (15 points) If terminal X is grounded, terminal Z is connected to a signal source having a
resistance of 100 Ω, find the voltage gain from signal source to Y, input and output resistances with
Y open-circuited. Ignore early effect for this step.

+12 V

RD
10 MW ꝏ
Y

ꝏ
X ꝏ
Z

Rs

0.5 mA
ꝏ

-12 V
a) Parameters of the MOS transistor in the circuit below are given as VTN=0.24V, k’n(W/L)=2.2
mA/V2, λ=0. Assuming that the transistor is operating in saturation region, design the circuit as
R1+R2=50 kΩ and VGS=0.5V and VDS=2.5V.
b) Find voltage gain, vO/vi, input and output resistances of the amplifier.

You might also like