RF Circuit Design Prof. S.
Levantino
Tutorials on Oscillators
OSC.1 Let us consider the crystal oscillator in figure, where L1 =
Vdd=1.8V
4.4 mH, C1 = 3.6 fF, R1 = 30 Ω, C = 1 pF, R → ∞, Vt = 0.5V, L1=4.4mH
! %
𝐾 = " 𝜇𝐶#$ & & ' = 2 µ𝐴/𝑉 " and Z1 represents the Z Ibias Z1 C1=3.6fF
equivalent impedance of an XTAL. R1=30Ω
C1
a) Derive the expression for Z(ω) as a function of the circuit R C=1pF
parameters. L1
R=1MΩ
b) Evaluate oscillation frequency when the XTAL is C C
R1 VT=0.5V
connected in parallel to the previously evaluated
Kn=2µA/V
impedance.
c) What is the minimum Ibias to guarantee start-up of the oscillation?
𝟐 𝐠
[Sol. a) 𝐙(𝐣𝛚) = 𝐣𝛚𝐂 − 𝛚𝟐𝐦𝐂𝟐 ; b) fosc = 40MHz; c) Ibias = 0.45µA]
OSC.2 Let us consider the oscillator in the figure, where Vdd = Vss
! % #$$
= 1.25V, Vt = 0.5V, 𝐾 = "
𝜇𝐶#$ & & ' = 10 𝑚𝐴/𝑉 " , L =
4nH, C1 = 0.5 pF, C2 = 0.5 pF, R1 = 1 kΩ, R2 = 2 kΩ and Ibias ' (" !"
= 3 mA.
#-.L
a) Making the necessary simplifications, derive the #0
oscillation frequency and check the start-up condition.
!1 (1
b) Assuming full-switching of the differential stage,
)*+IC
evaluate the oscillation amplitude at the output node,
Vout. %#CC
c) Plot Vout and Vx over one period and check the operating
region of the transistors.
[Sol. a) fosc = 3.56 GHz, |LG(fosc)| = gm(R1||R2)/2 = 2.58 > 1; b) |Vout|=1.27V; c) Vout = 1.25V + 1.27V·cos(ωosct),
Vx = 1.27V·cos(ωosct)]
1
OSC.3 Let us consider the circuit in figure, where Vt = 0.5V,
! 3V
"
𝜇𝐶#$ = 0.1mA/V " and 𝛾/𝛼 = 2/3.
a) Evaluate the resonant frequency of the differential load and 1nH 1nH
1pF 6.4Ω
find the values of (𝑊 ⁄𝐿)! and (𝑊 ⁄𝐿)" to obtain: (i)
( ) )⁄(𝑉 ( )
out- out+
differential gain at resonance (𝑉%&' − 𝑉%&' *+ − 𝑉*+ )
equal to 5dB and (ii) a -3dB bandwidth of the gain equal to
270MHz. (W/L)2 (W/L)2
b) Considering both transistor and resistor noise, evaluate the 1mA
output noise voltage spectral density at resonance. in+ in-
c) Is there any limit on the choice of (𝑊 ⁄𝐿)" ? If so, explain
why. (W/L)1 (W/L)1
2mA
[Sol. a) 𝒇𝟎 = 𝟑. 𝟓𝟔GHz, gm1 = 6mS, (𝑾⁄𝑳)𝟏 = 90, gm2 = 2.9mS,
(𝑾⁄𝑳)𝟐 = 𝟒𝟏; b) 𝑺(𝑺𝑺𝑩)
𝑽𝒐𝒖𝒕 (𝒇𝟎 ) = (6.1nV/√Hz) ; c) (𝑾⁄𝑳)𝟐,𝐦𝐚𝐱 = 205, to prevent oscillation.]
2
OSC.4 Let us consider the oscillator in the
figure. Assume infinite ß and VBE,on =
0.7V, VBC,sat = 0.5V for the BJTs.
a) Derive the circuit bias point.
b) Neglecting 𝑅" and 𝑟8 of the BJTs,
evaluate both oscillation frequency and
start-up margin.
c) Assuming full-switching of the
differential pair, evaluate the
oscillation amplitude and provide a
plot of base and collector voltages of
the BJTs over one period. Analyze the operating regions of the BJTs during the oscillation period
and discuss the purpose of C1 and C2.
d) How is the tank resistance modified by a finite value of R2? Size R2 in order to worsen the quality
factor of the resonant network by maximum 10%.
[Sol. a) IC = 1.5mA, VE = 1.3V, VB = 2.0V, VC = 3.3V, gm = 60mS; b) f0 = 4.36 GHz, gmRC1/(C1+C2) = 12.6 > 1; c)
A = 2.4V; the base-collector voltage, VBC, ranges between -2.9V and +0.3V; the BJTs go from cut-off to
forward active region. C1 and C2 help reduce the oscillation amplitude of the base voltage, allowing for a
higher oscillation amplitude before incurring in saturation of the BJTs; d) R2 = 630Ω.]
2
OSC.5 Let Vb = 0.15V, L = 1nH, R = 10Ω, C = 250fF, C1 = 1pF, R1 = Vdd
1kΩ, μCox(W/L)=120mA/V2 (nMOS), μCox(W/L)=56mA/V2
(pMOS) and Vt=0.45V for all transistors. L L
outp R C outn
a) With reference to the circuit in Fig. 1 (let Vdd = 0.55V), after C1 C1
deriving the bias current flowing into the FETs, calculate the R1 R1
frequency of oscillation and the gain margin for the oscillation Vb Vb
start-up (i.e. the loop gain at the oscillation frequency). Fig.1
Vdd
b) With reference to the circuit in Fig. 2 (let Vdd = 1.5V), after
deriving the bias current flowing into the FETs, calculate the L L
outp R C outn
frequency of oscillation and the gain margin for the oscillation
startup. C1 C1
[Sol. a) I = 600 uA, f0=7.114GHz, |LG(jω0)|=3.4; b) I=2mA,
f0=7.114GHz, |LG(jω0)|=5] R1 R1
Fig.2
Vb Vb