“SPUTTERING”
Inorganic Chemistry III
Course Code: CHEM-307
Dr. Sajjad Hussain Sumrra
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Figure Show Sputtering System
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Outline
• History of sputtering
• Definition
• Requirements of sputtering
• Principle of sputtering
• Process of sputtering
• Sputtering yield
• Classification of sputtering
• Comparison
• Conclusion
• References
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History:
• “Spluttering” word was first used by the Sir J.J. Thomson in
literature.
• Observed by the Grove of England in 1852 and it was named
by the Langmuir developed as thin film deposition
technique.
• It may be defined as the bombardment of ions, photons,
electrons to the target material as a result erosion of solid
material.
• Many application of this technique are used now a days. For
example sputtering is used to remove the surface layer from
the red blood cells.
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A typical ring geometry
sputter target here Gold
showing cathode made of
material to be deposited, the
anode.
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Definition
• It a technique in which argon ions are bombarded on target
material such as(Al3+ ,Au3+ ).The displaced molecules of the
target material are then deposited on the substrate.
According to Chemistry:
• “On an atomic level, sputtering is the process in which atoms
are ejected from a target or source material that is to be
deposited on a substrate - such as a silicon wafer, solar panel or
optical device due to the bombardment of high energy particles
on the target.”
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Reason for Sputtering
• The surface of the target is large so there is a
uniform thickness over substrate.
• By controlling the time and pressure the
thickness of film can be adjusted.
• The materials having high melting point can
be sputtered easily by this method.
• Sputtered materials from target have better
adhesion on substrate.
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Requirements for Sputtering
Sputtering gas Argon
Argon flow rate (sccm) 200,350,500
Substrate polycarbonate
Pressure 10 − 1000𝑚𝑡𝑜𝑟𝑟
Coating thickness 400nm
Target aluminum 8
The principle of Sputtering is to
use the argon ion from the
plasma of gaseous discharge
bombard on a target that was
target (cathode), atoms are
ejected from the target and
form a thin film coating on the
substrate (anode). Figure:1Principle(Sputtering) 9
Thermal Vaporization Theory:
It was given by Hippel , Sommermeyer, Towns
in 1926, 1935, 1944.
“ It states that due to the bombardment of
energetic ions on the target it surface becomes
too hot to be vaporized”.
Momentum Transfer Theory:
When the kinetic energy or momentum of
incoming ion is transferred to the target surface
then atoms are ejected.
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• In any collision the
Momentum is conserved.
• Kinetic energy is
Conserved in elastic
Collision. In sputtering
the collision is elastic Elastic or inelastic collision
Because the energy Required for the sputtering is
higher than vibrational and lattice bonding.
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Figure:02 Thin film deposition by Moment transfer
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A negative electrical potential is applied to
the target material which is cathode and to be
sputtered and the positive anode is material on
which sputtered material deposit.
When electric field is applied between the
electrodes free electrons will accelerate and
ultimately collide with the neutral atoms in
gas result in the ionization of neutral atoms to
become positively charged gas ions called 13
PLASMA.
Now the ions carry enough energy to knock out the atoms from
the target material and deposit on the substrate.
When the positively argon ion hitting the substrate ,there are
some left over positive ions that absorb the electrons in lower
energy state and these free electrons will recombine with the
ions it has less voltage .Now the excess voltage is used as light
or glow, so during this process a discharge or glow is created
that is called Plasma Glow.
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Continuous
Figure03 Plasma Glow
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Sputtering yield is defined as the number of atoms
removed from the target surface as the number of
ions strike with it and the yield range from 0.1 to
10.
𝒏𝒖𝒎𝒃𝒆𝒓 𝒐𝒇 𝒆𝒎𝒊𝒕𝒕𝒆𝒅 𝒑𝒂𝒓𝒕𝒊𝒄𝒍𝒆𝒔
Sputtering yield (S)=
𝒏𝒖𝒎𝒃𝒆𝒓 𝒐𝒇 𝒊𝒏𝒄𝒊𝒅𝒆𝒏𝒕 𝒑𝒂𝒓𝒕𝒊𝒍𝒆𝒔
It will depend on following factors:
Angle of incidence of ions
Incident ion energy
Target material
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Binding energy of target material
Mass of atoms or ions
To get the maximum yield
the angle must be 60° to 70°.
If it will 90° then yield will be
zero.
Figure 05 Sputtering yield versus angle of incidence
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Reactive Direct current
sputtering sputtering
Radio
Magnetron
frequency
sputtering
sputtering 18
• In this technique a reactive gas is added
along with the argon plasma gas. A
complex is formed between the reactive
gas and sputter ions that complex will
deposit on the substrate.
• It is very helpful to form a quick thin coating
of desired interest by adding more reactive
gas inside the chamber.
• When we add reactive gas in the chamber
along with the argon gas, we cannot
distinguish. 19
• At first it believe that sputtering is an easy
process to be carried out but later on their
disadvantage showed that by adding reactive gas
in the chamber the behavior of sputtering process
may change. The rate of deposition and the
texture of the film are also changed by adding
reactive gas. For example
• Oxides:𝑺𝒊𝑶𝟐 , 𝑻𝒂𝟐 𝑶𝟓 + (𝑶𝟐 )
• Nitrides:𝑺𝒊𝟑 𝑵𝟒 , 𝑻𝒂𝑵, 𝑻𝒊𝑵 + (𝑵𝟐 + 𝑵𝑯𝟑 )
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• Carbides: WC, TiC, SiC +(CH4.C2H4, C3H8)
Figure 06Reactive Sputtering
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)
• It is frequently easy to use because here we used Direct current
or potential difference between cathode and anode.
• The high DC current ionize the argon ions and they will strike
with the target material. Atoms will be released and move
toward anode to form a thin film of coating.
• Though it is easy to control with the electrically conductive
target material(metal) and low cost in power consumption.
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Figure07 Direct current Sputtering
• In this type an energetic radio wave is used
through an inert gas to create positive ions.
• When the power source is on it will send radio
waves through plasma to ionize the gas
molecules.
• These positive ions when hit with the target
material ,the target material is broken into small
pieces and these fine spray move toward the
cathode and ultimately formed the thin film.
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Figure 08 Radio Frequency sputtering 24
• Direct current sputtering deals with two major
problems:
the deposition rate is slow
Overheating and structural damage result if
the bombardment of electrons toward the
target is extensive.
So magnetron deals with both kind of problems
here we used the magnets behind the cathode
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these magnets will capture the incoming free
electrons in the magnetic field that is above the
target surface so these electrons are not free to
move and deposit on the substrate with the same
rate as does with the diode sputtering.
• The probability of ionizing a gas increase by
the capturing electrons as a result greater the
rate of sputter ion or deposition rate increase.
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Figure09 Magnetron Sputtering 27
Comparison of sputtering techniques
Reactive DC sputtering RF sputtering Magnetron
sputtering sputtering
[Link] this technique Direct voltage is Alternate current Magnets are
a reactive gas like applied. voltage is applied placed behind the
oxygen is added in to the target at target to capture
the chamber. frequency>50Hz. the free electrons.
[Link] reacts with the In this case the Target must not be Ionization of
target to form target must be conductive. electrons increases
another compound conductive. at cathode as a
and form a layer result yield is also
of thin film on increase.
substrate.
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Conclusion
There are many techniques to form a thin film
coating on the surface but according to the
sputtering it is most easy way and productive to
form a thin film coating on metals and alloys.
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References:
• Handbook of Thin Film Deposition (Third Edition) Andrew H.
Simon IBM Microelectronics, Hopewell Junction, NY2012,
Pages 55-88 (5-05-2020 7:54pm)
• Reactive sputter deposition edited by DIEDERIK DEPLA Stijn
Mahieu Chapter:04 Modelling of Reactive sputtering Process,
Page 131-133 (5-05-2020 8:09pm)
• Handbook of Sputter Deposition Technology: Fundamentals
edited by Kiyotaka Wasa, Isaku Kanno, Hidetoshi Kotera - 2012
Pages 65,93-96 at 10:20pm
• Plasma Science and Creation of Wealth- Pages 183
P. I. John-2005
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