Basic Electronics
Tutorial-1
22 january 2025
Problem set
1. Find the concentration of electrons and holes in a sample of germanium that has
a concentration of donor atoms equal to 1015 cm−3 . Is the semiconductor n-type or
p-type? Repeat the same for a silicon sample.(Hint: ni = 2.4 × 1013 cm−3 for Ge
and ni = 1.5 × 1010 cm−3 for Si )
2. Consider silicon at T = 300 K doped with phosphorus at a concentration of Nd =
1016 cm−3 . Hint; material constant(B) = 5.23 × 1015 and KB = 8.617 × 10−5 eV/K
(a) Calculate the intrinsic carrier concentration.
(b) Calculate the thermal equilibrium electron and hole concentrations.
(c) Excess electrons and holes are generated such that δn = δp = 1015 cm−3 .
Determine the total concentration of electrons and holes.
3. An n-type silicon material has a resistivity of ρ = 0.65 Ω · cm. If the electron and
hole mobilities are µn = 1250 cm2 /V-s and µp = 450 cm2 /V-s, respectively,
(a) What is the concentration of donor atoms?
(b) Determine the required electric field to establish a drift current density of
J = 160 A/cm2 .
4. The zero-biased junction capacitance of a silicon pn junction is Cjo = 0.4 pF. The
doping concentrations are Na = 1.5 × 1016 cm−3 and Nd = 4 × 1015 cm−3 .
(a) Find the built in potential and depletion width of the pn [Link] the
junction capacitance at VR = 1 V.
(b) An inductance of 1.50 mH is connected in parallel with the pn junction. Cal-
culate the resonant frequency fo of the circuit for reverse-bias voltages of
VR = 1 V.
5. (a) At what reverse-bias voltage does the reverse-bias current in a silicon pn junc-
tion diode reach 90 percent of its saturation value?
(b) What is the ratio of the current for a forward-bias voltage of 0.2 V to the
current for a reverse-bias voltage of 0.2 V?
6. A silicon pn junction diode has an applied forward-bias voltage of 0.6 V. Determine
the ratio of current at 100◦ C to that at −55◦ C.(consider change temp 10◦ C with
saturation current )
1
7. A pn junction diode is in series with a 1 MΩ resistor and a 2.8 V power supply.
The reverse-saturation current of the diode is Is = 5 × 10−11 A.(note: refer circuit
diagram without values )
(a) Determine the diode current and voltage if the diode is forward biased.
(b) Repeat the same if the diode is reverse biased.
Figure 1: circuit diagram
8. Find I and VO in each circuit shown in Figure, if forward voltage of diode Vγ = 0.7 V
Figure 2: circuit diagram
Note: if any non ideal parameters given in Q.8 then do Q.7 procedure to find Vγ value