PHYS1001-Physics
Model Questions
Unit 5- Semiconductor Devices
1. A light-emitting diode is made of GaAsP having a band gap of 1.9 eV. Determine the wavelength (in
nm) and color of radiation emitted.
2. Rectangular semiconductor sample of thickness carries a current of along its
length. When a magnetic field of is applied perpendicular to the current, a Hall voltage of
is developed across the sample.
i. Calculate the Hall coefficient .
ii. Determine the charge carrier concentration .
iii. Identify whether the semiconductor is n-type or p-type, assuming the Hall voltage is
negative.
3. A semiconductor sample is subjected to a magnetic field of , The current flowing through
the sample is The Hall voltage developed is , The thickness of the sample is
, Calculate the Hall coefficient and the carrier concentration.
4. An LED material has a band gap energy of Calculate the wavelength of the emitted light
and specify its colour in the visible spectrum.
5. In a Hall effect experiment a current of 0.25 A is sent through a metal strip having thickness 0.2 mm and
width 5 mm. The Hall voltage is found to be 0.15 mV when a magnetic field of 0.2 T is applied.
Determine (i) carrier concentration (ii) drift velocity of carriers.
6. What is a solar cell? Explain its working principle based on the photovoltaic effect with
necessary graph (V-I).
7. (a)Define the Hall coefficient (RH) and determine the RH using experimental setup.
(b)Find the color of radiation emitted by an LED having a bandgap of 1.9 eV?
8. a) Explain the development of Hall voltage in a current-carrying conductor placed in a magnetic field.
(2M)
b)Derive an expression for Hall voltage. (3M)
c) Describe the formation of depletion region and barrier potential in P-N junction diode. (3M)
9. a)How does tunnel effect play an important role in tunnel diode and plot V-I characteristics of tunnel
diode. (3M)
b)Explain the construction, working principle and V-I characteristics of Photodiode with suitable
diagram. (5M)
10. Depletion layer forms during the formation of a pn junction. Summarize the effect of bias on the
depletion layer in detail.
11. Interpret the V-I characteristic of p-n junction in detail with necessary diagram.
12. Compare the direct and indirect band gap semiconductors. Which materials are suitable for making
Laser and why?
13. Summarize the construction, working and applications of solar cell.
14. Describe the construction and working of LED. What are the advantages of LED over conventional light
sources?
15. Discuss the construction, working and applications of photodiode with necessary diagrams.
16. GaAs is a direct band semiconductor. If a laser is made up of GaAs, what is the radiation wavelength
and colour of laser light? Is the radiation in the visible region? The band gap of GaAs semiconductor is
1.44 eV.
17. Apply the principle of Hall effect to derive the expression for Hall coefficient in terms of Hall voltage.
Explain how to identify the N-type and P type semiconductors using Hall effect set-up.
18. Describe the difference in the V-I characteristic of a Tunnel Diode compared to a normal diode. Explain
what negative resistance is and account for its physical origin.
Short answer type questions
19. Draw the structure of a P-N junction at equilibrium and label all charge carriers present.
20. Why are direct band gap semiconductors used in the preparation of semiconductor lasers?
21. How is an LED different from a photodiode?
22. Is a tunnel diode a heavily doped or a lightly doped diode? Elucidate the need for it.
23. The Hall coefficient of a certain specimen is -0.0252 m3C-1. Identify the nature of majority charge carrier
and find its concentration.
24. Distinguish between the Zener breakdown and avalanche breakdown mechanisms.
25. Describe any two applications of Hall effect.
26. Explain magnetoresistance.