Extended Abstract
Extended Abstract
Wideband Amplifier
Ruben Miguel Gomes Machado, Student 67710, MEEC IST
Abstract—In System on a Chip integrated circuits, the inte- powering analog and mixed integrated circuits with the aim of
gration of several circuits into only one package leads to noise assessing their power supply noise rejection, more specifically,
that some circuits introduce in the power supply to impact their PSRR and line transient.
the operation of other circuits. Thus, to evaluate the power
supply noise sensitivity, the measurement of PSRR and line Parameter Unit
transient parameters is necessary. Testing and profiling these Bandwith DC a 10M Hz
parameters is accomplished through the use of an amplifier.
Power 150 W
In this work, the project for a wideband amplifier is carried
Output Voltage ±6 V
out. The development of all its building stages is presented:
the architecture choice, simulation, layout of the printed circuit Output Current 25 A
board and the necessary setup for its physical implementation. Gain 1a4 -
The output of this amplifier has a demanding specifications the Input Voltage ±10 V
bandwith, low output impedance and variable gain. It is designed TABLE I
with the purpose of powering analog and mixed integrated W IDEBAND AMPLIFIER SPECIFICATIONS .
circuits, to assess their power supply disturbances rejection.
The wideband amplifier, in addition to amplifying signals and
providing the necessary current to the system in test without This document is structured as follows: section 2 presents
entering in unstable behavior, this is, the amplifier will need available market solutions; section 3 presents the proposed
to adapt to different conditions without compromising neither solution, followed by methodology used for architecture sim-
performance nor reliability. Due to the expected temperature
increase during circuit operation, a cooling system that maintains
ulation and validation; section 4 presents a comparative study
its correctness is taken into consideration. The amplifier is about the existing PCB manufacture and cooling technologies.
then designed using the metal substrate printed circuit board All the steps and decisions taken during the layout process are
technology, designated by Insulated Metal Substrate (IMS). also here detailed; section 5 compares the achieved results with
Index Terms—Amplifier, Stability, PSRR, PCB, IMS the initially set goals, finishing with future work suggestions.
1
fp [Hz] = (2)
2πRO CL
fu
phaseshif t = tan−1 (3)
fp
RG (Ω) Gain
100k 1
3k 2
1.5k 3 Fig. 6. Time simulation without load at 100kHz.
1k 4
TABLE II
G AIN ADJUSTMENT WITH RESISTANCE . Given that the amplifier is to be used to supply analog
and mixed integrated circuits, resistive loads were considered
(RL ), ranging from 1 to 10 Ω and capacitive loads ranging
4
By analyzing Table III, in the open circuit configuration, the In Table V the simulations maximum absolute errors are
mean absolute error is 36mV. By using the architecture with presented. In the configuration without load, the lower absolute
gain equal to 2, a closer waveform to the expected signal is error occurs for unit gain, and one can verify that for higher
obtained at the output. gains the attenuation is much more accentuated than in the
In the circuit with load configuration, the smaller absolute previous approaches. With load the behavior is similar but not
errors occur for the maximum load values, with a maximum so accentuated, with largest error for the minimum load of
error of 118mV for the configuration of smaller capacitive and 0.35V.
resistive loads with gain 4.
As previously described, there are three factores that can Erro Absoluto (V)
W/o RL =1Ω RL =10Ω RL =1Ω RL =10Ω
influence the wideband amplifier operation. By sweeping the
Gain Load CL =1Ω CL =1µF CL =10µF CL =10µF
available gain range for different output loads and applying a
1 0.13 0.016 0.02 0.037 0.024
sine wave signal with 100 kHz frequency the expected circuit 2 1.16 0.016 0.096 0.16 0.092
operation was achieved, in order to analyse the frequency 3 2.12 0.23 0.15 0.25 0.15
range, a higher frequency signal must be applied. 4 3.08 0.35 0.20 0.34 0.19
As such, an input signal with the same amplitude is used, TABLE V
A BSOLUTE ERROR FOR TIME SIMULATIONS FOR F =10MH Z WITH AND
but with at a frequency of 1MHz, as depicted in Figure 8. WITHOUT LOAD .
In Table IV, maximum absolute errors for different loads
and gains are presented. The mean absolute error for the
configuration without load is 63.5mV, slightly higher than in According to specifications, the amplifier must be able to
the 100kHz situation, recording smaller errors for gains 1 and provide a maximum current of 25A. As such, applying the
2 and bigger errors for gains 3 and 4. When capacitive and same input signals as in the previous situations, a current
resistive load are present, one can verify that with the gain source is set at the wideband amplifier’s output, to verify its
increase the voltage output also increasingly differs from the operation behavior.
5
Load
The simulations show that the wideband amplifier, at high
W/o RL =1Ω RL =10Ω RL =1Ω RL =10Ω
frequencies, is bounded by an output current of 2A.
Gain Load CL =1µF CL =1µF CL =10µF CL =10µF
In the following Table VI the maximum absolute errors for 1 101.61 103.55 101.37 102.29 102.21
the 2V signal with 100kHz, 1MHz and 10Mhz signals are 2 143.56 146.69 145.30 144.86 149.92
presented. 3 150.46 156.67 147.77 156.47 153.84
4 155.71 161.09 163.07 158.98 154.94
f (Hz) 100k 1M 10M TABLE VIII
IOU T (A) 1 25 1 25 1 2 S ETTLING TIME ( NS ) AT 5% FOR DIFFERENT GAINS AND LOADS .
Gain 1 0.024 0.44 0.012 0.46 0.14 0.16
Gain 2 0.014 0.048 0.090 0.55 1.18 1.17
Gain 3 0.008 0.44 0.13 0.58 2.13 2.15
Gain 4 0.029 0.43 0.16 0.61 3.09 3.11 Another important characteristic to take into analysis, that
TABLE VI defines the amplifier ability to commute between voltage
T IME SIMULATION ABSOLUTE ERROR . extremes, is the slew-rate. Measuring slew-rate, given by the
maximum voltage change rate by time unit, requires a brusque
As one can check in Table VI, as the output current change in the input voltage to occur so that the highest output
increases, for higher gains, the output voltage attenuation voltage change rate is obtained. As such, considering the
increases, being more drastic for higher frequencies. previous simulation values, Table IX presents the several slew-
The input signal frequency increase also has another conse- rate values obtain for different gains and loads.
quence, consisting on the increasing phase difference between Load
input and output signals. However, this subject is explored W/o RL =1Ω RL =10Ω RL =1Ω RL =10Ω
in more detail in a later subsection, where the wideband Gain Load CL =1µF CL =1µF CL =10µF CL =10µF
amplifiers frequency response is analyzed, more specifically, 1 19.93 19.15 19.71 19.44 18.88
its amplitude and phase. 2 35.78 33.78 35.13 35.15 33.87
2) Line Transient: Similar to the previous subsection, this 3 52.05 48.80 50.91 51.30 49.21
section reports the simulation results for a step input signal 4 68.33 63.79 66.65 67.43 64.52
TABLE IX
with 2V amplitude, depicted in Figure 10. The goal is to S LEW- RATE (V/µS ) FOR DIFFERENT GAINS AND LOADS ..
check the line transient between the applied voltage maxima,
assessing the line transient slew-rate as well as its stabilization
time, at 1 and 5 %, depending on the used load. The settling As one can inspect in the Table IX, for the configuration
time (ts ) is the time it takes for the system response to be without load, the amplifier has the highest slew-rate values,
bounded by a defined margin for the final value. with its maximum for gain 4. However, with load, the same
suffers a decrease, with the lowest value for unit gain and
loads RL =10Ω and CL =10µF.
3) DC Response: This section analyses the amplifier re-
sponse to a DC signal, decpited in Figure 11 to determine
the possible voltage ranges, for input and output, according to
gain and applied load.
Load
Fig. 11. Input DC signal sweep.
W/o RL =1Ω RL =10Ω RL =1Ω RL =10Ω
Gain Load CL =1µF CL =1µF CL =10µF CL =10µF
In the Table X, one can consult the several positive satura-
1 144.12 170.71 162.73 175.63 160.37
tion voltage values for the different load configurations used.
2 208.69 210.30 222.93 220.00 243.56
3 224.19 229.12 226.01 230.83 228.14
4) Frequency Response: In this section, the wideband am-
4 221.88 231.31 240.73 228.50 241.49 plifier frequency domain analysis is presented, with the intent
TABLE VII of verifying stability with resource to the frequency response
S ETTLING TIME ( NS ) AT 1% FOR DIFFERENT GAINS AND LOADS . diagram, by looking for the frequency amplitude and phase
values.
A negative feedback system, like the one depicted in Figure
As one can verify, the final voltage is achieved in less than
12, has a transfer function given by the equation 4.
250ns, considering the 1% margin. For the 5% margin, the
largest settling time is recorded for gain 4, with RL =10Ω and VO A(jω)
CL =1µF, with ts =163.07ns. = (4)
VI 1 + A(jω)β(jω)
6
Load
W/o RL =1Ω RL =10Ω RL =1Ω RL =10Ω
Gain Load CL =1µF CL =1µF CL =10µF CL =10µF
1 13.29 11.23 13.04 11.24 13.04
2 13.29 11.26 13.03 11.27 13.03
3 13.29 11.26 13.03 11.27 13.03
4 13.28 11.26 13.03 11.26 13.03
TABLE X
S ATURATION VOLTAGE FOR THE DIFFERENT GAINS AND LOADS . Fig. 13. Block diagram of a system with interrupted feedback.
1 + A(jω)β(jω) = 0 (5)
1 + |A(jω)β(jω)|e−jφ(ω) = 0 (6)
Gain Phase Margin (o ) Gain Margin (dB) Cooling Technology Heat Flux (W/cm2)
1 11.69 6.26 Air Cooling 36
2 20.58 9.24 Indirect Water or Immersion Cooling 100
3 31.87 11.74 High Performance Conduction Cooling 125
4 38.56 13.68 TABLE XII
TABLE XI C OOLING TECHNIQUES AND THEIR RESPECTIVE MAXIMUM HEAT FLUX
P HASE MARGIN FOR DIFFERENT GAINS IN OPEN LOOP WITHOUT LOAD . REMOVAL .
copper layers, they can be classified as single, double or multi- The High Performance Conduction Cooling technique
layer [18]. Based on the substrate type, they can be classified makes use of materials with high thermal conductivity, pre-
as rigid, flexible or flex-rigid [18]. senting the most satisfying results (125 W/cm2).
A more recent PCB technology, known as Insulated Metal Thus, the IMS PCB technology allows for the best heat
Substrate (IMS), leverages the use of through hole components distribution, and the High Performance Conduction Cooling
technology in pair with the surface-mount device technology. technique is the one presenting best heat dissipation results,
Figure 16 depicts PCB layers using IMS technology . making these the chosen technologies to implement a wide-
band amplifier with correct operation.
B. PCB Project
1) Initial Considerations: The PCB’s layout is the detailed
Fig. 16. Aluminium substrate PCB. presentation of the components placement in the board, where
these are identified by their solder points (footprints), which
Because each THS6012 can dissipate up to 5.8W, energy are interconnected through copper tracks. The interconnections
dissipation as heat is a concern to be taken into consideration quality depends on the decisions taken throughout the layout
in this project. process. For this reason, it is important to follow the recom-
Regard the experimental test comparing temperature over mendations made available by the components manufacturers,
time of two PCB technologies. A glass fiber PCB (FR4), the rules difined by the PCBs manufacturer (in this case,
the most commonly used PCB manufacturing technology, Eurocircuits) and the norms documented in Generic Standard
and a metal substract board (IMS), more specifically, with on Printed Board Design [24].
aluminium substrate. The minimum component interconnections width is deter-
Implementing the same circuit with both technologies, that mined by their respective current, using the expression 9. It is
for this comparison purpose is a high power LED circuit, one not recommended to have 90o interconnections, minimizing
can observe in Figure 17 that the IMS technology is able to inductance effects, and tracks should be always spaced by
set at a lower temperature than the FR4 technology. 0.1mm minimum, limiting capacitive effects, and thus it is
suggested to have ground tracks between different voltage
tracks [24].
1/0.725
1 I
W [mils] = ( ) (9)
H k∆T 0.44
Considering the architecture’s feedbacks, we recommend
placing the feedback tracks with the shortest path possible, to
avoid parasitic inductances [25]. Parasitic inductance caused
by the track is given by expression 10. Copper thickness is
given by H, thickness by W and track length by L. Note that
Fig. 17. Overtime temperature analysis for FR4 and IMS substrates.
parasitic inductance increases with L.
Nevertheless, although the IMS technology enabling a better
heat distribution over the whole substrate area, it is necessary 2L W +H
to apply a thermal energy dissipation method to the PCB to Ind[µH] = 0.0002L ln + 0.2235 + 0.5
(W + H) L
further decrease the system’s temperature. (10)
There are three base methods for heat dissipation: conduc- Copper tracks also contribute as parasitic resistors, which
tion, convecection and radiation [20]. Convection cooling is can be determined using the expression 11. Copper resistivity
the most used method, given its reduced cost and efficiency is represented by ρ and positive temperature change rate
[21]. However, the development of systems of higher complex- is given by ∆T . Thus, one can limit parasitic resistors by
ity renders this method inefficient, and thus demand alternative increasing W .
cooling methods [22]. In Table XII three possible techniques
and their respective maximum heat flux removal are presented L
[23]: Resistance[Ω] = ρ (1 + 3.9 × 10−3 ∆T ) (11)
HW
8
Before proceeding with the layout design, it is necessary Besides the components depicted in Figure 18, 100nF ca-
to quantify the existing currents in the different branches and paciters are considered for decoupling op-amps from the power
the components power dissipation value. Because the current supply and a 50Ω resistor parallel to the wideband amplifier’s
depends from the selected gain and from the load value at the input signal.
amplifier’s output, this analysis considers the extreme case. Tables XIII and XIV list resistors and capacitors, respec-
Imposing the maximum output current of 25A, with an input tively, used in the wideband amplifer’s layout. Table XIII lists
signal of 2V and 1MHz frequency, sweeping the different the chosen resistors and their respective power heat dissipation
wideband amplifier gains, Figure 18 represents the maximum (PF ab ), according to the technical documentation of each
values on the circuit’s branches. manufacturer. In choosing a resistor, a power heat value higher
than the simulated was allowed.
Resistor R (Ω ) PF ab (W)
RX 10 2
RAU X 22 2
RF 1k 750m
R1B 1.5 k 1.5
R1A 2k 63m
R2A 3k 63m
R2B 21 k 63m
RG4 1k 63m
RG3 1.5 k 63m
RG2 3k 63m
RG1 100 k 63m
R50 50 1
TABLE XIII
L IST OF RESISTORS USED FOR THE LAYOUT.
Fig. 18. Circuit configuration with maximum branch currents.
the control voltage must come from the first amplifier stage,
to ensure these provides the same voltage to the inputs of the
follower blocks, this track needs to have low impedance.
The signal track IN , was of maximum width achieved
of 2.4mm, given space limitations. Using expression 11, one
can determine that a parisitic resistence created by the track
between the first and the last follower blocks is of 0.0733 Ω.
Taken into account the current traversing that branch, in the
worst case it results in a voltage drop of 0.029mV, thus being
this the voltage difference between the IN 5 and IN 4 pads.
Figure 22 depicts the first wideband amplifier stage.
Fig. 20. Main PCB layout.
B. Future Work
As future work it would be interesting to carry the following
tasks:
- Manufacture and implement the projected PCBs;
- Test with the resistive and capacitive loads considered
during dimensioning, with the intent of comparing simulation
results with experimental results;
- Project a power supply board for the wideband amplifier
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