Semiconductors

Semiconductors are materials which have conductivity between

conductors (Silver, Copper etc..) and insulators (Diamond, Glass etc...).

Conductors 10−2 − 10−8 Ω𝑚 102 − 108 𝑆/𝑚

Semiconductors 10−5 − 106 Ω𝑚 10−6 − 105 𝑆/𝑚

Insulators 1011 − 1019 Ω𝑚 10−19 − 10−11 𝑆/𝑚

Examples:
• Elemental semiconductors: • Compound semiconductors:
Silicon (𝑆𝑖) , Germanium (𝐺𝑒) 𝐺𝑎𝐴𝑠, 𝐼𝑛𝑃, 𝐶𝑑𝑆, Anthracene, Doped phthalocyanines
Polypyrrole, Polyaniline, Polythiophene
 • 𝑆𝑖 and 𝐺𝑒 are semiconductors in
elemental form and others are
not in elemental form.

Semiconductors
• In an isolated atom, each electron has definite energy as per its quantum state. Also,
electrons in the same quantum state will have the same energy in all isolated atoms.

Energy
𝑛=2
𝐸 = −3.4 𝑒𝑉 −0.85 𝑒𝑉
𝑛=4
−1.51 𝑒𝑉
𝑛=3
𝑛=1
−3.4 𝑒𝑉
𝐸 = −13.6 𝑒𝑉 𝑛=2

−13.6 𝑒𝑉 𝑛=1
𝑛=4 𝑛=3
𝐸 = −1.51 𝑒𝑉
𝐸 = −0.85 𝑒𝑉 Energy of Isolated
Atom
Bohr’s model

• In an isolated atom, discrete energy levels are present.

In a crystal, atoms come close (2 Å to 3 Å), and
the electrons have some new interactions:
• With electrons of neighbouring atoms

• W ith nucleus of neighbouring atoms

 Crystal

3𝑠 Energy Band (1 𝑒𝑉)

Energy

2𝑝 Energy Band

2𝑠 Energy Band
𝑁𝑎11 atom
1𝑠
𝑁𝑎11 atom 𝑁𝑎11 crystal 𝑁𝑎11 = 1𝑠 2 2𝑠 22𝑝6 3𝑠1

• If we take 𝑁 isolated atoms of Na, then all the 𝑁 number of 3𝑠1 electrons will have the same
energy. Therefore, their energy state can be represented by a straight line as shown above.
• But, when these isolated atoms are brought closer in a crystal lattice, no two electrons will
have same energy due to interatomic interactions and hence, an energy band is created.
• Width of energy band is greatest for valence electrons (For Na, it is 3s electrons).

• The Inner 𝑒− nearly remain unaffected by neighbouring atoms.

Assumption: 𝑆𝑖 crystal contains ′𝑁′ atoms of 𝑆𝑖.
• 4 𝑒− in outer orbit of each 𝑆𝑖 atom ⇒ 4𝑁 electrons
in outer orbit of 𝑆𝑖 crystal.

𝑎 in 𝑠-orbital :2 𝑒 .
−
• 𝑒𝑚 −

𝑎 in 𝑝-orbital :6 𝑒 .
−
• 𝑒𝑚 −

Conclusions: 𝑆𝑖14 = 1𝑠2 2𝑠 22𝑝6 3𝑠 23𝑝2

• 8𝑁(2𝑁𝑠 + 6𝑁𝑝) outer energy levels are 𝗍↓ 𝗍 𝗍

available in 𝑆𝑖 crystal. 𝑠 −orbital 𝑝 −orbital
• At Zero Kelvin,

8𝑁 energy levels

4𝑁 are vacant 4𝑁 are filled with 𝑒 −

 Region
Region 𝐵 Region 𝐴
Conduction Region 𝐷

𝐶
Band 4 𝑁 states 6 𝑁 states
0 electrons 𝑙=1
2 𝑁 electrons
Relative energy of electrons

𝑛𝑡ℎ
Gap
2 𝑁 states 𝑠ℎ𝑒𝑙𝑙
𝐸𝑔 𝑙=0
2 𝑁 electrons

4 𝑁 states
4 𝑁 electrons
spacing
Actual

8 𝑁 states
Valance 4 𝑁 electrons
Band
𝑙 =𝑛−2
𝑛 − 1 𝑡ℎ
𝑠ℎ𝑒𝑙𝑙
𝑙=0
Assumed spacing
In region A, as the atoms are in isolated states, therefore,
• 𝑝 orbital → 6𝑁 states → same energy level → 2𝑁 states among them are filled with electrons.
• 𝑠 orbital → 2𝑁 states → same energy level → all of them are filled with electrons.

In region B, the atoms are brought closer than that in region A and the splitting of energy levels
commences. It is noticeable that a gap is formed between two energy bands and electrons can
have energy anywhere in the energy band created.

In region C, the atoms are further brought closer and it is seen that all the energy levels start
intermixing. Some of the 6𝑁 states go below the 2𝑁 states.

In region D, the spacing is taken very close of the order of 2 to 3 Å, and then the 8𝑁 states are
split equally into two energy bands. There is an energy gap (𝐸𝑔) between the Conduction band
and Valence band.

• At 0 𝐾, all the 4𝑁 electrons lie in the energy band having lower energy ( i.e., Valence band )
while the energy band having higher energy ( i.e., Conduction band ) is empty.
 Energy Band

Valence Band (𝑉. 𝐵. ) Energy band containing valence electrons.

• Range of energies possessed by valence electrons in a crystal.

• These 𝑉. 𝐵. electrons do not participate in electrical conductivity.

Energy
Conduction Band (𝐶. 𝐵. )

• The band above valence band is called conduction band.

• Electrons may or may not exist in 𝐶. 𝐵.
• Range of energies possessed by free electrons in a 𝐶. 𝐵.
• 𝐶. 𝐵 electrons are responsible for electrical conductivity.
 Forbidden Energy Gap (FEG)

Energy Gap (𝐸𝑔 )

Electrons in 𝑉. 𝐵 may gain energy and transit to 𝐶. 𝐵. These

electrons cannot be found in the region between 𝑉. 𝐵 & 𝐶. 𝐵. The
energies lying in between 𝑉. 𝐵 & 𝐶. 𝐵 are forbidden (restricted,

Energy
prohibited) for electrons. Thus, there is an Energy Gap 𝐸𝑔 also
known as the Forbidden Energy Gap 𝐹𝐸𝐺. or 𝐹𝐸𝐺

𝐸𝑔 = (𝐶. 𝐵)𝑚 𝑖 𝑛 −(𝑉. 𝐵)𝑚 𝑎 𝑥

𝐸𝑔 = 𝐸𝑐 − 𝐸𝑣

• W hen energy equal to 𝐸𝑔 is provided, the electrons from the

valence band jump into the conduction band leaving behind
the holes in the valence band.
 Insulators Semi-Conductors Conductors

Conduction Band
Conduction Band

Energy
Energy
Conduction Band 𝐹𝐸𝐺 = 0
𝐹𝐸𝐺 > 3 𝑒𝑉 𝐹𝐸𝐺 < 3 𝑒𝑉
Energy

Valence Band

Valence Band Overlap

Valence Band

• 𝑒 − requires high temperature • 𝑒 − requires high temperature • 𝑒 − requires low temperature

to jump from Valance Band to to jump from Valance Band to to jump from Valance Band to
Conduction Band. Conduction Band. Conduction Band.
• No electrical conductivity • Low electrical conductivity • High electrical conductivity
 Carbon, silicon and germanium have energy band gap respectively equal to
T
𝐸𝑔 𝐶 , 𝐸𝑔 𝑆𝑖 𝐸𝑔 𝐺𝑒 .

As the size of the atom increases, the distance between valence electrons and the nucleus increases
which means the influence of the nucleus on electrons will be less, and hence, a small amount of
energy will be required to ionize them.

It implies that larger the size of the atom, lesser will be the energy band gap.
 Intrinsic Semiconductor

A semiconductor that is chemically pure or free from impurities is

known as an intrinsic semiconductor.

Intrinsic
semiconductor
 Intrinsic Semiconductor
• This free electron will generate a vacancy.
This vacancy with effective positive
charge is called hole.
• It is possible that another bonded
electron may try to fill this vacancy while
creating a hole at its present site.
• In this way, the electrons keep on creating
holes as they keep on filling the vacancies
at other sites. This will seem as if the holes
themselves are moving from one site to
another.
+4 Si or Ge • Electrons and holes are the energy/charge
carriers:
Covalent bonds • Current flowing in a semiconductor is due
to both free electrons and holes.
Bonding electrons
Total current = 𝐼𝑒 + 𝐼ℎ
• Si and Ge have four valence electrons each.

• Si and Ge share one of its four valence electrons with

each of its four nearest neighbour atoms. These shared
electron pairs form covalent bond.
 Intrinsic Semiconductor (Si and Ge)

Conduction Band Conduction Band

Electro energy

𝐸𝐶 𝐸𝐶
• Electron movement in 𝐶. 𝐵. gives
𝐸𝑔 𝐸𝑔 electron current( 𝐼𝑒 )

𝐸𝑉 𝐸𝑉

• Hole movement in 𝑉. 𝐵. gives

hole current (𝐼ℎ )

Intrinsic Semiconductor Intrinsic Semiconductor

@𝑇 =0𝐾 @𝑇 > 0𝐾
 Fermi level of Intrinsic Semiconductor

• The highest energy level that an electron can

Conduction Band occupy at the absolute zero temperature is
𝐸𝐶 known as the Fermi Level.
Electro energy

𝐸𝑓
𝐸𝑔
Fermi • In intrinsic semiconductors, the 𝑛ℎ in the
level valence band is equal to the 𝑛𝑒 in the
𝐸𝑉
conduction band. Hence, the probability of
occupation of energy levels in the conduction
band and valence band are equal. Therefore,
the Fermi level for the intrinsic semiconductor
lies in the middle of the band gap.
Intrinsic Semiconductor
@𝑇 > 0𝐾
 Intrinsic Semiconductor

• In the case of intrinsic semiconductors,

the number density of free electrons is
equal to the number density of holes.

+4 +4 +4 𝑛𝑒 = 𝑛 ℎ = 𝑛𝑖
𝑇 > 0𝐾
• Apart from the process of generation of
conduction electrons and holes, a
+4 Site 1 +4 +4 simultaneous process of recombination
occurs in which electrons recombine with
Site 2
the holes. At equilibrium,
0𝐾
+4 +4 +4 Rate of generation =Rate of recombination
 Limitations of Intrinsic Semiconductors

• In intrinsic semiconductors, current is controlled by the temperature and not by the user.

• Magnitude of current is very small at normal temperature.

𝑖 = 𝑛𝑒𝐴𝑣𝑑 Where,
𝑛 = Number of charge carriers per unit volume.
𝑒 = Charge on electrons.
𝐴 = Cross-sectional area of conductor.
𝑣𝑑 = drift velocity.

• 𝑛𝑒 = 𝑛ℎ , hence they have poor efficiency.

𝑛𝑒 = Number of free electrons

𝑛ℎ = Number of holes
Why is carbon not an intrinsic semiconductor although it lies in the same group of periodic table as germanium and
silicon?

The electronic configuration of carbon The electronic configuration

𝐶 : of Silicon 𝑆𝑖 :

28 = 1𝑠2 2𝑠 2 2𝑝 6 3𝑠23𝑝2
𝑆𝑖14
𝐶612 = 1𝑠2 2𝑠 2 2𝑝2

𝐶
𝑆𝑖

Hence, the four valence electrons are closer to nucleus for 𝐶 and away from nucleus for 𝑆𝑖. So, effect of nucleus on
valence electrons is low for 𝑆𝑖 and high for 𝐶.
Energy gap between the conduction band and valence band is least for Ge, followed by Si and highest for C.
 Intrinsic Semiconductor: Conductivity (𝝈)

We know,
𝑉 1 𝑣𝑑
𝐸= Conductivity 𝜎 = Mobility 𝜇 =
𝑙 𝑙 𝜌 𝐸
𝑉 = 𝐸. 𝑙 𝑖 = 𝑛𝑒𝐴𝑣𝑑 𝑅 = 𝜌𝑙/𝐴
𝐴
Now,
− +

𝐼 𝑉 = 𝑖𝑅
𝜌𝑙
+ − 𝐸. 𝑙 = 𝑛𝑒𝐴𝑣𝑑
𝐴
1 𝑣𝑑
= 𝑛𝑒 ⇒ 𝜎 = 𝑛𝑒𝜇
𝑉 𝜌 𝐸

Let, 𝑒 = Charge on the electron, For Semiconductor,

𝑛ℎ = Number density of holes, 𝜎 = 𝜎𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛𝑠 + 𝜎ℎ𝑜𝑙𝑒𝑠 = 𝑛𝑒𝑒𝜇𝑒 + 𝑛ℎ𝑒𝜇ℎ
𝑛𝑒 = Number density of electrons,
𝜇𝑒 = Mobility of electrons, 𝜎 = 𝑒(𝑛𝑒𝜇 𝑒 + 𝑛 ℎ 𝜇 ℎ )
𝜇ℎ = Mobility of holes

• Mobility of electrons are more than holes. (𝜇𝑒 > 𝜇 ℎ)

 Extrinsic Semiconductors

• Extrinsic semiconductors are obtained when a measured and small amount of

chemical impurity is added to the intrinsic semiconductors.

• Extrinsic semiconductors are doped intrinsic semiconductors.

• Doping is a process of replacement of a small number of atoms in the lattice by

atoms of neighbouring columns from the periodic table.

• These doped atoms create energy levels within the band gap and therefore alter
the conductivity.
 Extrinsic Semiconductor

𝑛-type sem iconductors 𝑝-type sem iconductors

Pentavalent atoms Trivalent atoms

• Pentavalent atoms – 5 valence electrons. • Trivalent atoms – 3 valence electrons.

• It is formed when pentavalent atoms are • It is form ed when trivalent atoms are doped
doped into an intrinsic sem iconductor. into an intrinsic semiconductor.
 𝑵 − type Semiconductor
• 5 valence electrons of 𝑃 form 4 covalent bonds with
neighbouring 𝑆𝑖 atoms; hence, one electron becomes extra in
the lattice.
Free electron • The ionisation energy required for the 5𝑡ℎ valence electron is very
low (0.01 𝑒𝑉 for 𝐺𝑒 and 0.05 𝑒𝑉 for 𝑆𝑖) and thus valence electron
goes very easily to conduction band.

+4 +4 +4 • The number of (𝑒 − ℎ) pair generated will be very less, as more

energy is required in breaking a bond and get the pair generated.

• An 𝑛-type semiconductor is electrically neutral, not negatively

+4 +5 +4 charged.
Electrons (doping)
• Charge carriers
+4 +4 +4 Electrons & holes (𝑒 − ℎ pair generation)
• Free electrons are majority charge carriers.
• Holes are minority charge carriers.
• The pentavalent dopant donates one extra electron for
N-type sem iconductor conduction and hence known as donor impurity.
• 𝑛𝑒 ≫ 𝑛ℎ
 Energy Band for 𝑵 − Type Semiconductor

Donor electron
Conduction Band
𝐸𝐶
+4 +4 +4
Donor level
Fermi level
𝐸𝑔 ≈ 0.72 𝑒𝑉 (𝐺𝑒)
+4 +5 +4 𝐸𝑔 ≈ 1.1 𝑒𝑉 (𝑆𝑖)

𝐸𝑉

+4 +4 +4 Valance Band

• Fermi level is present near the conduction band and far away from the valence band.

• Energy level of free electron of pentavalent atom which is called a donor electron is very close to
the conduction band. So, with small amount of energy electrons will go into the conduction band.
• The energy level of the free electron of a pentavalent atom is called the donor level.
 Energy Band for 𝑵 − Type Semiconductor

Conduction Band
+4 +4 +4
𝐺𝑒 = 0.01𝑒𝑉
𝑆𝑖 = 0.05𝑒𝑉

+4 +5 +4
𝐸𝑔 ≈ 0.72 𝑒𝑉(𝐺𝑒)
𝐸𝑔 ≈ 1.1 𝑒𝑉(𝑆𝑖)
+4 +4 +4

• 𝑁 −type semiconductors are electrically

neutral.
• Pentavalent impurity brings one extra electron Valance Band
but also brings one extra proton which makes
the semiconductor neutral.
 𝑷 − type Semiconductor

• Since the dopant is trivalent, it has 1 valence 𝑒−

less than 𝑆𝑖 or 𝐺𝑒 and hence, a hole is generated.

• An electron from a nearby covalent bond m ay

recom bine with a hole and a new hole appears
+4 +4 +4
at the site of electron. This way the movement of
the hole continues.
• Trivalent impurity accepts an electron from
+4 +3 +4 neighbouring atom and hence it is called
acceptor impurity.
Hole Holes (doping)
• Charge carriers
+4 +4 +4
Electrons & holes (𝑒 − ℎ pair
generation)
• Holes are m ajority charge carriers.
• Free electrons are m inority charge carriers.
P -type sem iconductor
• 𝑛ℎ ≫ 𝑛𝑒
 Energy Band 𝑷 − Type Semiconductor

Conduction Band
+4 +4 +4

𝐸𝑔 ≈ 0.72 𝑒𝑉(𝐺𝑒)
+4 +3 +4 𝐸𝑔 ≈ 1.1 𝑒𝑉(𝑆𝑖)
Fermi level
Hole Acceptor level

+4 +4 +4
Valance Band

• Fermi level lies above the valence band, and it is closer to the valence band.
• The energy level of the holes created by trivalent atom is called the acceptor level.
• Acceptor level is very close to the valence band. With a small amount of energy, a bonded
electron can fill the vacant space created due to a trivalent atom which leads to improved
conductivity.
 Energy Band 𝑷 − Type Semiconductor

Conduction Band
+4 +4 +4

+4 +3 +4

𝐸𝑔 ≈ 0.72 𝑒𝑉(𝐺𝑒)
Hole 𝐸𝑔 ≈ 1.1 𝑒𝑉(𝑆𝑖)
+4 +4 +4

𝐺𝑒 = 0.01𝑒𝑉
• 𝑃 −type semiconductors are electrically neutral. 𝑆𝑖 = 0.05𝑒𝑉

• Trivalent impurity is short of one valence

electron, but it is also short of one proton which Valance Band
makes the semiconductor neutral.
 Relation between Electron Concentration and
Hole Concentration

• For an intrinsic semiconductor, the electron concentration and hole

concentration are equal.

𝑛𝑖 → Electron concentration / Hole concentration of an intrinsic semiconductor

• For an extrinsic sem iconductor,

𝑛𝑒 → Number of free electrons per unit volume (Electron concentration)

𝑛ℎ → Number of holes per unit volume (Hole concentration)

• The electron and hole concentration in a semiconductor in thermal equilibrium

is given by,

𝑛 𝑒 𝑛 ℎ = 𝑛2
 Drift Speed, Mobility and Drift Current

Drift Speed: The average speed attained by charge

Drift Speed: 𝐸 carriers (electrons here) in a conductor in a direction
𝑟5 opposite to the electric field is:
𝑟3
𝑟4 𝑒𝑟𝐸
𝑟2 𝑟6 𝑣𝑑 = −
𝑚
𝑟1 𝑟8 𝑟7

𝐴 𝐵 𝐵′ Mobility:The value of the drift speed per unit of electric

field strength. So, the faster the particle moves at a
𝑙
Drift Current: given electric field strength, the larger the mobility.
Electron (𝑒 − ) 𝐸 𝑣𝑑 𝑒𝑟
𝜇= = 𝜇h < 𝜇e
𝐴 𝐸 𝑚
0 𝑉
𝑣𝑑

Drift Current: is due to the motion of charge carriers

due to the force exerted on them by an electric field:
𝐼
− + 𝐼 = 𝑛𝑒𝐴𝑣 𝑑 𝐽 = = 𝑛𝑒𝑣 𝑑
𝐴
 Mobility of electrons in a semiconductor is defined as the ratio of their drift
velocity to the applied electric field. If for an n-type semiconductor, the density
2
𝑚
T of electrons is 1019 𝑚 −3 and their m obility is 1.6 𝑉.𝑠
then the resistivity of the
semiconductor (contribution of holes is ignored) is close to

Given: 𝑛𝑒 = 1019 𝑚−3; 𝜇𝑒 = 1.6 𝑚3/𝑉𝑠

Current density,
𝐼 𝜎 → Conductivity
𝐽 = 𝜎𝐸 also, 𝐽= = 𝑛𝑒𝑣𝑑
𝐴
𝜌 → Resistivity
𝑣𝑑
𝜎𝐸 = 𝑛𝑒𝑣𝑑 ⇒ 𝜎 = 𝑛𝑒 = 𝑛𝑒𝜇
𝐸

𝜎 = 𝑒(𝑛𝑒𝜇 𝑒 + 𝑛 ℎ 𝜇 ℎ )

𝜎 = 𝑒𝑛𝑒𝜇 𝑒 (contribution of holes is ignored)

1 1
𝜌= = Ω𝑚
𝜎 (1.6 × 10−19)(1019)(1.6)
1
𝜌= ≈ 0.4 Ω𝑚
2.56
 𝑷 − 𝑵 Junction

• The holes on 𝑝 side diffuse towards the 𝑛 side. While the

electrons on 𝑛 side diffuse towards 𝑝 side.
Potential Barrier

Electric Field
𝑒− 𝑒− 𝑒− 𝑒− • Diffusion current is due to the movement of these majority
𝑒− − + charge carriers.
− + 𝑒− 𝑒−
𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒−
𝑒− − + 𝑒− 𝑒− 𝑒− • The direction of diffusion current is from 𝑝 side to 𝑛 side.
𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒−
0.1 𝜇𝑚
• Accumulation of positive charge on 𝑛 side Accumulation of
Depletion negative charge on 𝑝 side.
p-type region n-type • This region at the junction is called the depletion region.

Diffusion current
 𝑷 − 𝑵 Junction
• This accumulation of negative and positive charges at the
junction creates an electric field whose direction is from 𝑛
Diffusion current type to 𝑝 type semiconductor. This electric field restricts the
movement of the majority of charge carriers.

Potential Barrier • The electric field creates a sort of potential barrier and any
charge carrier either hole or electron has to overcome this
Electric Field barrier to diffuse to the other side of junction.
𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒−
− + 𝑒− 𝑒− • The magnitude of diffusion current decreases but, it never
𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒− becomes zero, as there will be few majority charge carriers
which will have enough energy to move to the other side.
𝑒− − + 𝑒− 𝑒− 𝑒−
𝑒− − + 𝑒− 𝑒− 𝑒 − 𝑒− • The electric field will help the minority charge carriers
(i.e., the electrons for 𝑝 type and holes for 𝑛 type
0.1 𝜇𝑚 semiconductor) to move to the other side of the
Depletion junction.
p-type region n-type
• The current generated due to the movement of minority
Drift current charge carriers is called the drift current.

• The direction of drift current is from 𝑛 side to 𝑝 side.

 𝑷 − 𝑵 Junction

After Depletion region form ed,

Initially, Diffusion current
decreases
Only Diffusion current
𝑒− 𝑒− − + 𝑒− 𝑒 − 𝑒 −

𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒− − + 𝑒− 𝑒−
+ 𝑒− 𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒 − 𝑒 −
− 𝑒−
+ 𝑒− − + 𝑒− 𝑒− 𝑒−
𝑒− 𝑒− − 𝑒− 𝑒− 𝑒− 𝑒−
− +
𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒− 𝑒− 𝑒− 𝑒− 𝑒−
− +
𝑒− 𝑒 − 𝑒− 𝑒− 𝑒−
p-type Depletion
n-type
region
p-type Depletion
n-type
region Drift current
increases
 𝑷 − 𝑵 Junction (at Steady State)

In equilibrium,
PN junction
Metallic 𝒆− 𝒆− − + 𝒆− 𝒆− 𝒆− Metallic
contact contact
− + 𝒆− 𝒆−

𝒆− − + 𝒆− 𝒆− 𝒆− 𝒆−
𝒆− Diffusion current = Drift current
− +
𝒆− 𝒆− 𝒆− 𝒆−
− +
𝒆− 𝒆− 𝒆− 𝒆− 𝒆−
1 𝜇𝑚

Depletion
region

• To use the PN junction in practical circuit, metallic contacts are made at two ends,
as shown in figure, and the complete set up is known PN junction diode.
• On changing the polarity of an external battery connected to the diode, the behavior
of the diode changes completely.
 Diode

• Diode is a two-terminal electronic component that conducts electricity primarily in

one direction.

• Diode offers high resistance to flow of current in one direction and low resistance to
the flow in opposite direction.

• A diode is basically a junction created by doping both pentavalent atoms and trivalent
atoms together in an intrinsic semiconductor.

• Majority charge carriers diffuse from either sides due to the concentration gradient
and as a result, when equilibrium is reached, a 𝑝-𝑛 junction (Diode) is formed.

o p-n Junction Diode

p-type n-type o Photo Diode
o Zener Diode
Diode o Light Emitting Diode (LED)
 Diode

A semiconductor diode is basically a p-n junction with metallic contacts provided at the
ends for the application of an external voltage which can alter the barrier potential.

• The direction of arrow indicates the Anode Cathode

conventional direction of current.

• The equilibrium barrier potential can be

altered by applying an external voltage 𝑉
across the diode. p-type n-type

• Offers low resistance in one direction and

high resistance in the other.
 DIODE IN FORWARD BIAS

p-n junction forward bias condition: Positive terminal of the battery is connected to the p-
side and the negative terminal to the n-side of p-n junction.

𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒−
− + 𝑒− 𝑒−
𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒−
𝑒− − +
𝑒− 𝑒− 𝑒−
− +
𝑒− 𝑒− 𝑒− 𝑒− 𝑒−

p-type n-type p-type n-type

+ −

𝑉
 DIODE IN FORWARD BIAS

Potential Barrier Potential Barrier

𝑉𝑜− 𝑉

p-n junction p-n junction-forward bias

• The external potential difference applied by the battery reduces the potential barrier
inside the 𝑝-𝑛 junction as both are opposite in polarity to each other.

• As a result, the electric field decreases and hence, the depletion region shrinks. Due
to this, more and more majority charge carriers can cross the depletion region and
thus, the diffusion current increases.

• The net current flows from the 𝑝-side to the 𝑛-side.

Diffusion current ≫ Drift current

 FORWARD BIAS 𝐼 − 𝑉 CHARACTERISTICS

• Initially, on increasing the voltage,the 𝐼(𝑚𝐴)

increment in current is almost negligible.
But, after a certain value of voltage called
the threshold voltage or cut-in voltage,
even for a small increase in voltage,the
current increases drastically. 100

• It is because at cut-in voltage, the potential 80

barrier becomes zero and now most of the 60 Forward Bias
charge carriers can diffuse to the other side.
40

20

∆𝐼 1 𝑅𝐹 = Forward bias 𝑉
Slope = = 0.2 0.4 0.6 0.8 1.0
∆𝑉 𝑅𝐹 resistance
Cut in voltage
𝑅𝐹 ≈ 10 Ω to 100 Ω
 DIODE IN REVERSE BIAS

P-n junction reverse bias condition: Positive terminal of the battery is connected to
the n − side and the negative terminal to the p − side of p-n junction

𝑒− 𝑒− − + 𝑒 − 𝑒− 𝑒−
− + 𝑒− 𝑒−
𝑒− 𝑒− − + 𝑒− 𝑒− 𝑒− 𝑒−
𝑒− − +
𝑒− 𝑒− 𝑒−
− +
𝑒− 𝑒− 𝑒− 𝑒− 𝑒−

p-type n-type
 DIODE IN REVERSE BIAS

Potential Barrier

Potential Barrier

𝑉𝑜+ 𝑉
𝑉𝑜

p-n junction p-n junction-reverse bias

• The external potential difference applied by the battery increases the potential barrier
inside the p − n junction.

• As a result, the electric field increases and depletion region expands. The magnitude
of diffusion current is still very low. But, even if the electric field supports the migration
of the minority charge carriers, the drift current is almost constant.

• This is due to very less concentration of the minority charge carriers. Also, the
magnitude of current in reverse bias is very low (of the order of 𝜇𝐴).
 𝑰 − 𝑽 Characteristics

• Initially, with increase in voltage, the current is very low and is almost constant.
• At breakdown voltage, the current increases sharply due to the avalanche effect.

Avalanche effect:
With increase in voltage, the electric field also
increases due to which the velocity of the free
∆𝐼
electrons becomes very high.
Breakdown ∆𝑉
This high velocity electron knocks off a bonded Voltage
electron and then these two free electrons will
knock off another two bonded electrons and so
the process will go on which results in sharp
increase in the current.

Slope = ∆𝐼
=
1 𝑅𝑅 = Reverse bias resistance
∆𝑉 𝑅𝑅 𝐼(𝜇𝐴)
𝑅𝑅 ≈ 106 Ω
 𝑰 − 𝑽 Characteristics

𝐼(𝑚𝐴)
Semiconductors do not follow Ohm’s law.
100
80
Dynamic resistance:
60
40 Forward Bias
Δ𝑉
𝑟𝑑 = 20
Δ𝐼 100 80 60 40 20
𝑉(𝑉) 𝑉(𝑉)
0.2 0.4 0.6 0.8 1.0
Breakdown
Voltage Reverse Bias 10
For forward bias, the dynamic resistance is 20
low whereas for reverse bias, the dynamic 30
resistance is very high. 40
50
Diode is conducting in forward bias and non-
60
conducting in reverse bias.
𝐼(𝜇𝐴)
 T In the following figure, the diodes which are forward biased is/are:

For forward biasing of diode, p-type of

diode
should be at higher potential than n-type.

Hence, options (𝑎) and (𝑐) are in forward

bias.
 Avalanche breakdown

• Avalanche breakdown happens only if the diode is connected in

reverse bias. As we increase the reverse bias voltage, the strength of
the electric field in depletion region increases. Due to this high
electric field, the velocity and hence the kinetic energy of minority
electrons also increases. These highly energized electrons knockout
the valence electrons from the atoms through collisions. By this
way, a large no. of free electrons is generated, and this gives rise to
large amount of current.

• Therefore, the avalanche breakdown is due to collision of minority

charge carriers
 Zener Diode

Zener diode is a heavily doped semiconductor diode that is designed to operate in

the reverse bias condition.

p n

Anode Cathode
− +

Zener Diode Circuit Symbol Clarence M elvin Zener

 Zener Effect

• In Zener diode, impurity (doping) is high on both sides. The depletion layer is also
very thin.

• Due to high doping, the concentration of majority charge carriers is very large.

• Hence, a small depletion region will be enough to generate high electric field
which can stop the diffusion current.

• Increase in reverse bias voltage causes a high electric field in the depletion region,
and this high electric field detaches the valence electrons from the neutral atoms
in the depletion region.

• Therefore, a large no. of free electrons are generated. This gives rise to large
amount of current.

• This explains the phenomenon of increment in current at Zener voltage in breakdown

region.
 𝑰 − 𝑽 Characteristics of Zener Diode

• Works in the breakdown region of

𝐼(𝑚𝐴) reverse bias.
Reverse Bias
• In breakdown region, the current keeps
on increasing while the voltage remains
constant.

(𝑉𝑧) • The voltage at which this phenomenon

𝑉(𝑉) 𝑉(𝑉) happens is known as Zener voltage (𝑉𝑍 ).

• In normal diodes similar phenomenon

takes place but,there the mechanism
is avalanche breakdown in which free
Avalanche Zener electrons knock off bonded electrons.
Breakdown Breakdown

𝐼(𝜇𝐴) • The emission of electrons from the host

atoms due to the high electric field (of the
order of 106 𝑉Τ𝑚 ) is known as internal field
emission or field ionization.
 Zener Diode

𝑖𝑛

Forward Bias Reverse Bias

𝑎𝑐𝑡𝑠 𝑎𝑠 𝑎𝑐𝑡𝑠 𝑎𝑠

Simple Diode Voltage

Regulator

The primary objective of the Zener diode as a voltage regulator is to maintain a

constant voltage.
 The current flowing through
the Zener diode will change.

• Any increase or decrease in the input voltage results in increase or decrease of the voltage
drop across 𝑅 without any change in voltage across the Zener diode.
 • For Zener diode to act as a voltage regulator, it must be operated in Breakdown
region.
𝐼 = 𝐼𝑍 + 𝐼𝐿

• The series resistance protects the zener diode from damage due to high current
flow.

• For good voltage regulation, 𝐼𝑍 ≫ 𝐼𝐿 so that the Zener diode operates in required region.
• 𝐼𝑍 should be below safe maximum current.
 5.6 𝑉
T 𝐼𝑧

Solution: 200 Ω

9 − 5.6 3.4 𝐼𝑧
The current(𝐼𝑅 ) through 200 Ω resistor is: = 𝐴
200 200
9𝑉 800 Ω

3.4 5.6
The current 𝐼𝑧 through the Zener is: 𝐼𝑅 − 𝐼𝐿 = − 𝐴
200 800

= 10 𝑚𝐴
 The figure represents a voltage regulator circuit using a Zener diode. The breakdown
voltage of the Zener diode is 6 𝑉 and the load resistance is 𝑅𝐿 = 4 𝐾Ω. The series
T
T resistance of the circuit is 𝑅𝑖 = 1 𝐾Ω. If the battery voltage 𝑉𝐵 varies from 8 𝑉 to 16 𝑉,
what are the minimum and maximum values of the current through Zener diode ?

6𝑉
Solution:
𝑅𝑖
𝐼𝑧 𝐼𝑅𝐿
For voltage 𝑉𝐵 = 8 𝑉 𝐼𝑅
6 6 𝑉𝐵 − 6 8 − 6 𝑉𝐵 𝑅𝐿
𝐼𝑅 𝐿 = = 𝑚𝐴 𝐼𝑅𝑖 = = 𝑚𝐴 = 2 𝑚𝐴
𝑅𝐿 4 𝑅𝑖 1
6
𝐼𝑍(𝑚𝑖𝑛) = 2 − 𝑚𝐴 = 0.5 𝑚𝐴
4 0𝑉

For voltage 𝑉𝐵 = 16 𝑉
6 6 𝑉𝐵 − 6 16 − 6
𝐼𝑅𝐿 = = 𝑚𝐴 𝐼𝑅𝑖 = = 𝑚𝐴 = 10 𝑚𝐴
𝑅𝐿 4 𝑅𝑖 1
6
𝐼𝑍(𝑚𝑎𝑥) = 10 − 𝑚𝐴 = 8.5 𝑚𝐴
4
 RECTIFIER

• A rectifier is a device that converts alternating current (AC), which periodically reverses
direction, to direct current (DC).

HALF WAVE RECTIFIER

FULL WAVE RECTIFIER

FULL WAVE BRIDGE RECTIFIER

 HALF WAVE RECTIFIER

• The diode restricts the current in one direction while allows the current in other
direction, thereby, converts the alternating current into direct current.

Primary winding Secondary winding

𝑖𝑆
AC 𝜀𝑃 𝑁𝑃 𝑁𝑆 𝜀𝑆
supply

Input - 220 𝑉 (AC) Out put - 6 − 9 𝑉 ( DC)

 HALF WAVE RECTIFIER

𝑁𝑃 𝑁𝑆 𝑆1
𝑖𝑃

𝜀𝑃 𝜀𝑆 𝑅𝐿
𝑆2

• During the positive half cycle of the input AC, the diode will be in forward bias, and it
will allow the current to flow. Therefore, output voltage will be non-zero.

• During the negative half cycle of the input AC, the diode will be in reverse bias, and
it will restrict the flow of current. Therefore, the output voltage will be zero in this
case.

• The diode allows only positive half cycle of the input. It is known as “Half wave rectifier”.
 FULL WAVE RECTIFIER

𝑁𝑃 𝑁𝑆 𝑆1
𝑖𝑃 𝑖𝑆
𝐷1
𝑅𝐿
𝜀𝑃 𝐶
Center
Tap(C.T) 𝐷2
𝑆2

• The central tapped transformer with two diodes are used in Full wave rectifier.
 FULL WAVE RECTIFIER
𝜀𝑃

𝜋 2𝜋 3𝜋

𝜀𝑆
𝐷1 𝐷2

• During the positive half cycle of the input AC, the diode 𝐷1 is forward biased and
the diode 𝐷2 is reverse biased. At this situation, point 𝐶 is at higher potential than
the center tap, the output voltage is also positive.

• During the negative half cycle of the input AC, the diode 𝐷1 is reverse biased and
the diode 𝐷2 is forward biased. In this case also the point 𝐶 is at higher potential
than the center tap, therefore, the output voltage is positive even though the
input voltage is negative.
 INPUT vs OUTPUT

Half wave rectifier Full wave rectifier

Input
Input
𝜀𝑃
𝜀𝑃

𝜋 2𝜋 3𝜋
𝜋 2𝜋 3𝜋

𝜀𝑆 Output 𝜀𝑆 Output
 FULL WAVE BRIDGE RECTIFIER

𝑁𝑃 𝑁𝑆 𝑆1 +
𝑖𝑃 𝑖𝑆 𝐷2 𝐷1

𝜀𝑃 𝐷3
𝑆2 − 𝐷4 𝜀𝑆 𝑅𝐿

• Uses four or more diodes in a bridge circuit configuration to convert

alternating current to a direct current.
 FULL WAVE BRIDGE RECTIFIER
𝜀𝑃
𝑁𝑃 𝑁𝑆 𝑆1 +
𝑖𝑃 𝑖𝑆 𝐷2 𝐷1
𝜋 2𝜋 3𝜋
𝜀𝑃 𝐷3
𝑆2 − 𝜀𝑆
𝐷4 𝜀𝑆 𝑅𝐿

• During the positive half cycle of the input AC, the diodes 𝐷1 and 𝐷4 are forward biased
and the diodes 𝐷2 and 𝐷3 are reverse biased. The output voltage is positive.
 FULL WAVE BRIDGE RECTIFIER

𝜀𝑃
𝑁𝑃 𝑁𝑆

𝑖𝑃 𝑖𝑆 𝐷2 𝐷1
𝜋 2𝜋 3𝜋
𝜀𝑃 𝐷3
𝜀𝑆
𝑆2 + 𝐷4 𝜀𝑆

𝑅𝐿

• During the negative half cycle of the input AC, the diodes 𝐷1 and 𝐷4 are reverse biased,
and the diodes 𝐷2 and 𝐷3 are forward biased. The output voltage across the load is
again positive, even though the input voltage is negative.
 FULL WAVE BRIDGE RECTIFIER

𝜀𝑃

𝜋 2𝜋 3𝜋

𝜀𝑆
Capacitor filter is used to filter out the ac ripples and give pure dc voltage.

Rectifier
𝑅𝐿
 𝜀𝑖𝑛𝑝𝑢𝑡
𝐴 − 𝐵: Capacitor gets charged.

𝐵: 𝑉𝑐𝑎𝑝𝑎𝑐𝑖𝑡𝑜𝑟 = (𝜀 𝑜𝑢𝑡𝑝𝑢𝑡 ) 𝑚𝑎𝑥

+ + +
𝐵 − 𝐶: Capacitor gets discharged
via 𝑅𝐿 . 𝑇 𝑇 3𝑇 2𝑇
2 − 2
−
DC output
𝜀 𝑜𝑢𝑡𝑝𝑢𝑡
𝐵
• Due to the discharging, there is a
slight decrease in the capacitor
voltage but in the next half cycle
as the rectifier output voltage 𝐴
increases, it again start charging 𝐶
and hence, the voltage across the
load remains almost constant.
Output
 SPECIAL PURPOSE p-n JUNCTION DIODES

Opto-electronic Junction Devices

• Optoelectronic junction devices are p-n junction devices in which carriers

are generated by photons.

Photo-Diode

LED

Solar Cell
PHOTODIODE

W hen a photodiode is illuminated by

light (photons) of sufficient energy, new
electron-hole pairs are generated from
the atoms in the depletion region.

Due to the electric field of the junction, the

electrons and holes are swept across the
depletion region before they can recombine.

Holes move towards p- side and electrons

move towards n-side.

Therefore,the direction of current will be

from n-side to p-side inside the diode.
 PHOTODIODE

• A photodiode is always used in reverse bias to

prevent the recombination of electron-hole
pair.
𝜇𝐴
• Thus, the change in the Photocurrent with
the change in the intensity of Light can be
measured.
 𝐼(𝑚𝐴)
• Higher the intensity, higher will be
the no. of incident photons, higher
the no. of 𝑒-ℎ pair generated and
hence, higher will be the current.

𝐼3 > 𝐼2 > 𝐼1 𝑉(𝑉) 𝐼1 𝑉(𝑉)

𝐼2
𝐼3

𝐼(𝜇𝐴)
 With increasing biasing voltage of a photodiode, the photocurrent magnitude:
T

𝐼(𝑚𝐴)
On increasing the biasing voltage of photodiode,
the magnitude of photocurrent first increases
and then attains a saturation

𝑉(𝑉) 𝑉(𝑉)

𝐼3

𝐼(𝜇𝐴)
 p-type n-type

• An LED is a heavily doped 𝑝-𝑛 junction which operates under forward bias.
• When the diode is forward biased, the majority charge carrier on 𝑝-side i.e., holes diffuse
towards 𝑛-side while the majority charge carrier on 𝑛-side i.e., electrons diffuse towards 𝑝-
side

• Because of the high concentration of majority charge carriers, on 𝑝-side, the diffused
electrons recombine with holes and on 𝑛-side, the diffused holes recombine with electrons.
On recombination energy is released in the form of electromagnetic radiation(light).
 Conduction band
When Energy 𝐸𝑔 is supplied, 𝑒−

𝐸𝑔 = ℎ𝜈 ⇒ 𝐸𝑔 𝖺 𝜈
The 𝑒 − in the valence band takes up the
energy and jumps to the conduction band
and an electron-hole pair is generated.

Valence band
On recombination of electron-hole pair
(i.e., when an electron in the conduction
band jumps back to the valence band) 𝐸𝑔 = ℎ𝜈
an energy equal to the forbidden gap ⇒ 𝐸𝑔 𝖺 𝜈
energy (𝐸𝑔 ) is released as EM Radiation.
• In 𝑆𝑖, 𝐺𝑒 semiconductors, Infra-red radiation are
emitted during recombination, so we can’t see
it.
• The semiconductor used for fabrication of visible LEDs must at least have a band
gap of 1.8 𝑒𝑉 (spectral range of visible light is from about 0.4 µ𝑚 to 0.7 µ𝑚, i.e., from
about 1.8 𝑒𝑉 to 3 𝑒𝑉)

Examples ; Conduction band

𝑒−
Aluminium Gallium Arsenide (𝐴𝑙𝐺𝑎𝐴𝑠)
Gallium Phosphide (𝐺𝑎𝑃) 𝐸𝑔 = ℎ𝜈 ⇒ 𝐸𝑔 𝖺 𝜈

Valence band
 Infra red

Amber

Green

White
Yello
•

Blue
Red
Forward Intensity of emitted light is determined

w
current by the forward current conducted by the
𝐼(𝑚𝐴) junction.
50

40
• Safe value of forward current is around
30 5 𝑚𝐴 for usual LED and go up to 30 𝑚𝐴 for
20 LED providing high brightness output.

10

1 2 3 4 5 𝑉
Advantages of LED(s):

• Low Operational Voltage and Power Consumption

• Instant On-Off switching without warm-up time

• The bandwidth of emitted light is nearly monochromatic.

• Long Life and negligible wear and tear

 Front Grid Front Grid Contact
n-type Silicon
Contact
(~0.3 𝜇𝑚) n-type

p-n
junction p-type
p-type Silicon Back Grid Contact
(300 𝜇𝑚)

• Back contact, below p-type 𝑆𝑖 wafer: Metallic.

• Front contact, above n-type 𝑆𝑖 wafer: Metallic grid, occupies ~15 % of cell area so that light
can be incident on the cell from the top.

• Due to the sunlight, electron-hole pairs are generated from the neutral atom at the
depletion region and because of the presence of electric field in the depletion region, the
electron hole pair get separated.
 n-type Front Grid
• The separated electron-hole pairs are collected by Contact
the front grid contact and the metallic back
contact.
• Thus, they give rise to potential difference between
front grid contact and metallic back contact.
• When an external load is connected to the cell,
currents begins to flow through the load. p-type
Metallic Back
Contact
Material Selection for solar cell fabrication:

• Band-gap in the range of 1.0 𝑒𝑉 to 1.8 𝑒𝑉.

• High solar radiation absorption capability.

• Good electrical conductivity.
• Ease of availability and cost.
 When the solar cell is not connected to
the external circuit When the ends of the solar cell are connected only by a
wire

• The accumulation of charges at both • The current begins to flow from 𝑛-side to 𝑝-side
ends ( i.e.,holes on 𝑝-side and electrons inside the 𝑝-𝑛 junction or 𝑝-side to 𝑛-side in the
on 𝑛-side ) will reach a maximum value external circuit. This current has a maximum value as
at some point of time and this is called there is no resistance in the external circuit called
saturation. At saturation, the voltage the short circuit current 𝐼𝑆𝐶 . Since the current is
has a maximum value called the open from 𝑛-side to 𝑝-side inside the 𝑝-𝑛 junction, it is
circuit voltage (𝑉𝑂𝐶 ). taken as negative.
 𝐼

Open Circuit
Voltage

𝑉𝑜𝑐
𝑉(𝑉) 𝑉(𝑉)

𝐼𝑠𝑐
Short Circuit
Current

𝐼
• Maximum number of photons available in 𝐼(𝑚𝐴)
sunlight have approximately 1.5 𝑒𝑉 energy.

• That means, if we use semiconductor

materials with band gap ~1.5 𝑒𝑉 or less,then

Irradiance(Intensity)
we will get the maximum energy from
sunlight.

Silicon 1.11

Solar
𝑆𝑖

Cupric oxide 𝐶𝑢𝑂 1.20

ℎ𝜈(𝑒𝑉)
Gallium arsenide 𝐺𝑎𝐴𝑠 1.43

Indium phosphide 𝐼𝑛𝑃 1.35

• Transistors were designed in 1947 by J. Bardeen, William B. Shockley &
W. H. Brattain of Bell Telephone Lab, USA.
• Transistors are basically combination of two diodes or two junctions.

𝑝 𝑛 + 𝑛 𝑝 = 𝑝 𝑛 𝑝

𝑝 − 𝑛 diode 𝑛 − 𝑝 diode 𝑝−𝑛−𝑝

Transistor

𝑛 𝑝 + 𝑝 𝑛 = 𝑛 𝑝 𝑛

𝑛 − 𝑝 diode 𝑝 − 𝑛 diode 𝑛−𝑝−𝑛

Transistor
 𝑛−𝑝−𝑛 𝑝−𝑛−𝑝
Transistor Transistor

• A thin layer of p-type semiconductor • A thin layer of n-type semiconductor

is sandwiched between two n-type is sandwiched between two p-type
semiconductors. semiconductors.

Base Base
𝑒 𝑒 𝑒 ℎ ℎ ℎ
𝑒 𝑒 𝑒 𝑒 ℎ 𝑒 ℎ
ℎ ℎ
𝑒 𝑒 𝑒 ℎ
𝑒 𝑒 ℎ
𝑒 ℎ 𝑒 𝑒 𝑒 ℎ ℎ
𝑒 𝑒 𝑒 ℎ ℎ ℎ
ℎ 𝑒 ℎ 𝑒 ℎ
𝑒 𝑒 𝑒 𝑒 𝑒 ℎ

Emitter Collector Emitter Collector

 Base Base
ℎ ℎ
𝑒 𝑒 𝑒 ℎ ℎ ℎ
𝑒 𝑒 𝑒 𝑒 𝑒 ℎ
ℎ ℎ
𝑒 𝑒 𝑒 𝑒 𝑒 ℎ ℎ
ℎ ℎ
𝑒 ℎ 𝑒 ℎ 𝑒
𝑒 𝑒 𝑒 ℎ
𝑒 ℎ
𝑒 𝑒 ℎ 𝑒 ℎ ℎ ℎ 𝑒 ℎ
𝑒 𝑒 𝑒 𝑒 𝑒 𝑒 ℎ

Emitter Collector Emitter Collector

All three segments of a transistor have different thicknesses and doping levels:

Emitter Moderate High

Base Thin Low

Collector Large Moderate

 Base
𝑒 𝑒 Emitter
Collector
𝑒 𝑒
𝑒 ℎ 𝑒 𝑒
𝑒 𝑒 𝑒
𝑒
𝑒 ℎ 𝑒 𝑒
𝑒 𝑒 𝑒
𝑒
ℎ 𝑒
𝑒 𝑒 𝑒 𝑒 𝑒

Emitter Collector
𝑛-𝑝-𝑛 transistor Base

Base
ℎ ℎ ℎ
ℎ
ℎ 𝑒
ℎ
ℎ
Emitter Collector
ℎ
𝑒 ℎ ℎ
ℎ ℎ ℎ
ℎ 𝑒 ℎ
ℎ

Emitter Collector
𝑝-𝑛-𝑝 transistor Base

• The arrow on the emitter line shows direction of current through emitter base junction.
 𝑛 − 𝑝 − 𝑛 transistor 𝑝 − 𝑛 − 𝑝 transistor

Emitter Collector Emitter Collector

Forward Reverse Forward Reverse

biased Base Biased biased Base Biased

• In normal operation, the emitter-base junction is forward- Active state of

biased, and the collector-base junction is reverse-biased. the transistor
 • Emitter-base junction → forward biased → Thin

Emitter Base ← 𝐸
• Collector-base junction → reverse biased → Thick
𝑒 Collector
𝑒 𝑒 𝑒 𝑒 𝑒 𝑒 𝑒

𝑒 𝑒 𝑒 𝑒
ℎ
𝑒 𝑒 𝑒 • Due to heavily doped emitter, 𝑒 − are easily injected to
𝑛 𝑝 base.
𝑒 𝑒 𝑒 𝑒 𝑒 𝑒 𝑛 𝑒
ℎ
𝑒 𝑒 𝑒 𝑒 𝑒 𝑒 𝑒

𝑒 𝑒 𝑒 𝑒
ℎ
𝑒 𝑒 𝑒 • Most of the injected electrons can easily pass the base-
𝑒 collector junction as the direction of the electric field
𝐼𝐸 𝐼𝐶 supports the motion of injected electrons, and the rest
𝑒
of the electrons come out of the base terminal.
𝑉𝐸𝐸
𝑉𝐶𝐶
𝐼𝐵 • 𝐼𝐸 → Emitter current (Coming out of the emitter)

• 𝐼𝐵 → Base current (Going into the base)

𝑛-𝑝-𝑛 transistor in common-base mode
• 𝐼𝐶 → Collector current (Going into the collector)
• Using Kirchhoff's law, 𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

• The physical design of a transistor is such that

𝐼𝐵 ≪ 𝐼𝐸 . Typically 𝐼𝐵 is 1~5% of 𝐼𝐸 .

• 𝛼 & 𝛽 parameters for transistors are defined as,

𝐼𝐶 𝐼𝐶 𝐼𝐸
𝛼= 𝛽= Current gain (𝛽) 𝐼𝐶
𝐼𝐸 𝐼𝐵

𝛼 ≅ 0.95 𝑡𝑜 0.99
𝑉𝐸𝐸
𝛼 𝐼𝐵 𝑉𝐶𝐶
𝛽=
1−𝛼
• Current gain (𝛽)

𝐼𝐶
𝛽= 𝛽 ≅ 50 𝑡𝑜 200
𝐼𝐵
𝐼𝐸 𝐼𝐶
• From the relation 𝐼𝐶 = 𝛽𝐼𝐵, we get 𝐼𝐶 which is 50 to 200 times
higher than 𝐼𝐵 . So, a transistor can also be used as an
amplifier.
𝑉𝐸𝐸
𝐼𝐵 𝑉𝐶𝐶
• For DC Current • For AC Current
𝐼𝐶 = 𝛽𝐷𝐶 𝐼𝐵 ∆𝐼𝐶 = 𝛽𝐴𝐶 ∆𝐼𝐵
It refers to change in current.

• In general, it is seen experimentally that:

𝛽𝐴𝐶 = 𝛽𝐷𝐶 = 𝛽
 5.488 𝑚𝐴
5.60 𝑚𝐴. (𝛽)
T

Given: 𝐼𝐶 = 5.488 𝑚𝐴, 𝐼𝐸 = 5.60 𝑚𝐴

To find: 𝛽
Solution: 𝐼𝐵 = 𝐼𝐸 − 𝐼𝑐
𝐼𝐵 = 5.60 − 5.488 = 0.112 𝑚𝐴

𝐼𝐶 5.488
𝛽= =
𝐼𝐵 0.112

𝛽 = 49
 A transistor can be configured in 3 different ways:

𝐶 𝐶
𝐶 𝐸
𝐵 𝐵

𝐵
𝐸 𝐸
𝑉2
𝑉1 𝑉2
𝑉1
𝑉1
𝑉2

Common emitter Common base Common collector

• All three are 𝑛-𝑝-𝑛 transistors.

• 𝑉2 > 𝑉1 ⇒ 𝐸-𝐵 Junction in forward bias and 𝐶-𝐵 Junction in reverse bias.

• The transistor is most widely used in common emitter configuration.

 • The 𝐵𝐸 junction is forward biased with the
help of 𝑉𝐵𝐵.

𝐼𝐶 • 𝑉𝐶𝐶 > 𝑉𝐵𝐵 → 𝐶𝐵 junction is reverse biased.

𝐼𝐵 𝐶 • 𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶

𝐵 𝑅𝐶 • 𝑉𝐵𝐸 → Potential difference b/w Forward bias

the base and the emitter. Voltage
𝑅𝐵 𝐸 𝑉𝐶𝐸
𝑉𝐶𝐶 • 𝑉𝐶𝐸 → Potential difference b/w
𝑉𝐵𝐸 𝐼𝐸 the collector and the emitter.
𝑉𝐵𝐵
• 𝑉𝐶𝐸 is only providing the reverse bias voltage so
that 𝐶𝐵 junction becomes reversed biased. 𝑉𝐶𝐸
Common-emitter mode in 𝑛-𝑝-𝑛 itself is not the reverse bias voltage.
transistor
• Higher the value of 𝑉𝐶𝐸, higher is the reverse bias
voltage b/w the collector and the base.
• Input characteristics: Variation of 𝐼𝐵 with 𝑉𝐵𝐸 𝐼𝐶
keeping 𝑉𝐶𝐸 fixed.
Here, 𝐶
𝐼𝐵
𝑉𝐵𝐸 :Base-Emitter voltage.
𝐼𝐵 : Input current. 𝐵 𝑅𝐶

𝑅𝐵 𝐸 𝑉𝐶𝐸
𝑉𝐶𝐶
𝑉𝐵𝐸 𝐼𝐸
• Output characteristics: Variation of 𝐼𝑐 with 𝑉𝐶𝐸 𝑉𝐵𝐵
keeping 𝐼𝐵 fixed.
Here,
𝑉𝐶𝐸 :Collector-Emitter voltage.
𝐼𝐶 : Output current.
 𝑉𝐵𝐸
𝐼𝐵 (𝑖𝑛 𝜇𝐴) 𝑉𝐶𝐸 = 10 𝑉
100
<Barrier Potential of >Barrier Potential of 𝑉𝐶𝐸 = 15 𝑉
𝐵𝐸 junction 𝐵𝐸 junction 80
60
𝐼𝐵 is small 𝐼𝐵 starts growing gradually, and
the curve looks similar 40
to that of a forward bias 𝑝-𝑛
20
junction.
0.2 0.4 0.6 0.8 1.0 𝑉𝐵𝐸 (𝑖𝑛 𝑉)

• With increases of 𝑉𝐶𝐸 base current (𝐼𝐵) decreases.

• For output characteristics, 𝐼𝐵 is fixed and dependence of 𝐼𝐶 on 𝑉𝐶𝐸 is studied .

𝐼𝐶
𝐼𝐶
(𝑖𝑛 𝑚𝐴)
𝐶
8 𝐼𝐵

6 𝐵 𝑅𝐶

4 𝑅𝐵 𝐸 𝑉𝐶𝐸
𝑉𝐶𝐶
Base current (𝐼𝐵)
2 𝑉𝐵𝐸 𝐼𝐸
10 𝜇𝐴 𝑉𝐵𝐵

2 4 6 8 10 12 14 16 𝑉𝐶𝐸 (𝑖𝑛 𝑉)
• W hen 𝑉𝐶𝐸 Increases the 𝐼𝐶
increases. strength of electric Increases.
field.

• Since the concentration of electrons is limited at the

emitter, it can provide electrons up to a certain limit.
Therefore,the 𝐼𝐶 can’t increase indefinitely with the
𝐼𝐶
increase of 𝑉𝐶𝐸 rather the 𝐼𝐶 will reach a constant (𝑖𝑛 𝑚𝐴)
value. Base current (𝐼𝐵)
8 50 𝜇𝐴

6 40 𝜇𝐴
• Since 𝐼𝐶 = 𝛽𝐼𝐵, 𝐼𝐶 increases with increase in 𝐼𝐵. 30 𝜇𝐴
4
20 𝜇𝐴
2 10 𝜇𝐴

2 4 6 8 10 12 14 16 𝑉𝐶𝐸 (𝑖𝑛 𝑉)
• Input resistance 𝑟𝑖

∆𝑉𝐵𝐸 𝐼𝐶
𝑟𝑖 =
∆𝐼𝐵 𝐶
𝑉 𝐶𝐸
𝐼𝐵

• Output resistance 𝑟𝑜 𝐵 𝑅𝐶
𝑅𝐵 𝐸 𝑉𝐶𝐸
∆𝑉𝐶𝐸 𝑉𝐶𝐶
𝑟𝑜 =
∆𝐼𝐶 𝑉𝐵𝐸
𝐼𝐵 𝑉𝐵𝐵

• Current amplification factor (𝛽)

∆𝐼𝐶 𝐼
• Input and output resistances are dynamic
𝛽𝑎𝑐 = 𝛽𝑑 = 𝐶 resistance because the voltage and current
∆𝐼𝐵 𝐼𝐵
𝑉 𝐶𝐸 do not follow linear relation in case transistor.
 The output characteristics of a transistor is shown in figure. Find the value of 𝛽𝑎𝑐
T when 𝑉𝐶𝐸 = 10 𝑉 and 𝐼𝐶 = 4.0 𝑚𝐴.

𝐼𝐶 (𝑚𝐴)
Given:𝑉𝐶𝐸 = 10 𝑉 and 𝐼𝐶 = 4.0 𝑚𝐴 Base current (𝐼𝐵 )
60 𝜇𝐴
8
To find:𝛽 𝑎 50 𝜇𝐴

Solution: 6
40 𝜇𝐴
∆𝐼𝐶 4 30 𝜇𝐴
𝛽𝑎 =
∆𝐼𝐵 20 𝜇𝐴
𝑉 𝐶𝐸
2 10 𝜇𝐴

4.5 − 3 𝑚𝐴 2 4 6 8 10 12 14 𝑉𝐶𝐸 (𝑉)

𝛽𝑎 =
(30 − 20)𝜇𝐴
𝑉 𝐶𝐸

𝛽𝑎𝑐 = 150
 Inthe circuit shown in the figure, the input voltage 𝑉𝑖 = 20 𝑉, 𝑉𝐵𝐸 = 0 𝑉 and 𝑉𝐶𝐸 = 0 𝑉.
T Then find the values of 𝐼𝐵 , 𝐼𝐶 and 𝛽.

Given: 𝑉𝑖 = 20 𝑉, 𝑉𝐵𝐸 = 0 𝑉 and 𝑉𝐶𝐸 = 0 𝑉

To Find: 𝐼𝐵 , 𝐼𝐶 and 𝛽

Solution: Collector current is calculated as:

20 − 0
𝐼𝐶 = = 5 × 10−3 𝐴
4 × 103

𝐼𝐶 = 5 𝑚𝐴

We know that input voltage is given by:

𝑉𝑖 = 𝑉𝐵𝐸 + 𝐼𝐵𝑅𝐵

𝑉𝑖 = 0 + 𝐼𝐵 𝑅𝐵

20 = 0 + 𝐼𝐵 × 500 × 103
−3
20 𝛽 = 𝐼𝐶 = 5 × 10 = 125
𝐼𝐵 40 × 10 −6
𝐼𝐵 = = 40 𝜇𝐴
500 × 103
 𝑉𝑖 = Input voltage.
𝐼𝐶
𝑉𝑂 = Output voltage which is b/w
collector and emitter.
𝐼𝐵 𝐶
𝑅𝐵
𝐵 𝑅𝐶
Applying Kirchhoff’s Voltage Law in loop 2 𝑉𝑜
1 & 2: 𝐸
𝑉𝑖 𝑉𝐵𝐵 1 𝑉𝐶𝐶
𝐼𝐸
𝑉𝐵𝐵 = 𝑉𝑖 = 𝐼𝐵𝑅𝐵 + 𝑉𝐵𝐸

𝑉𝐶𝐸 = 𝑉𝑜 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
 𝑉𝑜
Active
region

Cut off
• 𝑉𝐵𝐵 = 𝑉𝑖 = 𝐼𝐵𝑅𝐵 + 𝑉𝐵𝐸 region Saturation
region
• 𝑉𝐶𝐸 = 𝑉𝑜 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶

𝑉𝑖
• W hen 𝑉𝑖 is low, 𝑉𝑜 is high.

• When 𝑉𝑖 is high, 𝑉𝑜 is low.

Cut-Off Low Low 0 0 𝑉𝐶𝐶

Active ↓

High Low
Saturated High High High
(Saturated) ~ Zero
• Transistor can be operated as a switch. 𝐼𝐶 𝑖
𝐶
• Let 𝑉𝑖 = 0 − 1 𝑉 → Low Input 𝑅𝐵
𝐼𝐵 𝑖

𝐵 𝑅𝐶
𝑉𝑖 > 5 𝑉 → High Input
𝐸
𝑉𝑖 𝑉𝐵𝐵 𝑉𝐶𝐶
• Cut off region → Transistor 𝑂𝐹𝐹 𝐼𝐸
• Saturation region → Transistor 𝑂𝑁

𝑉𝑜 Active
region
W hen 𝑉𝑖 < 1 𝑉,
the transistor No current through
goes to the cut- the transistor (𝐼𝐶 = 0)
Cut off
off region. region Saturation
region
Output (𝑉𝑂 ) = 𝑉𝐶𝐶 Transistor
Bulb glows Transistor
𝑂𝐹𝐹
𝑂𝑁
𝑉𝑖
0 1 5
 𝐼𝐶
• Cut off region → Transistor 𝑂𝐹𝐹 𝐶 𝑖
𝐼𝐵 𝑖
𝑅𝐵
• Saturation region → Transistor 𝑂𝑁
𝐵 𝑅𝐶
W hen 𝑉𝑖 > 5 𝑉, the 𝐸
transistor goes to the Current flows through 𝑉𝑖 𝑉𝐶𝐶
𝑉𝐵𝐵
saturation region. the transistor (𝐼𝐶 ≠ 0) 𝐼𝐸

Bulb doesn’t Active

Output (𝑉𝑂 ) ≅ 0 𝑉𝑜
glow region

Cut off
• Voltages are designed in such a way that region Saturation
the transistor does not remain in an region
Transistor
active state. Transistor
𝑂𝐹𝐹
𝑂𝑁
𝑉𝑖
0 1 5
 𝑉𝑜 Active 𝐼𝐶
region
𝐼𝐵 𝐶
𝑅𝐵
Cut off 𝐵 𝑅𝐶
region Saturation
region 𝐸
𝑉𝑖 𝑉𝐵𝐵 𝑉𝐶𝐶
𝐼𝐸
𝑉𝑖

Transistor Bulb

Cut-Off Saturation Cut-Off Saturation

Switch-Off Switch-On Glow Not Glow

 Amplification is a process of electronically increasing power of a signal.

• Transistors are used to amplify signals.

 Amplifier

Output without Amplification Output with Amplification

• An amplifier increases the amplitude of the

• A microphone converts a sound signal into an
electrical signal produced by the mic keeping
electrical signal which goes to the speaker.
the nature of the signal (waveform) the same.
The speaker replicates that electrical signal
and by vibrating, it produces the sound back.
• This means the audio that the mic receives will
• W ithout an amplifier, the strength of the remain the same after amplification, but its
electrical signal that the speaker receives is loudness will increase.
the same as that of the mic. Hence, the
loudness of the sound will not increase. • Hence, the sound produced by the speaker will
be much louder than the original sound.
 𝐼𝐶

𝐼𝐵 𝐶
𝑅𝐵
𝐵 𝑅𝐶
𝑉𝑜
𝐸
𝑉𝑖 𝑉𝐶𝐶
𝑉𝐵𝐵 𝐼𝐸

• We know that, ∆𝐼𝐶

Current gain in 𝐶𝐸 mode: 𝛽𝑎 = ⇒ ∆𝐼𝐶 = 𝛽∆𝐼𝐵
∆𝐼𝐵

• This property is used to amplify weak signals by supplying them at base junction
and getting an amplified output at collector junction.
 𝐼𝐶 • Transistor to be used as an amplifier, should be
operated in the mid of the active region.
𝐼𝐵 𝐶
𝑅𝐵
𝐵 𝑅𝐶 • The voltage can be greater or lower than the
𝑉𝑜 mean [Link] a transistor is operated at a
𝐸
𝑉𝑖 𝑉𝐶𝐶 point close to the saturated region, there may
𝑉𝐵𝐵 𝐼𝐸 be a chance that the voltage can go to the
saturated region; in that case, the output
voltage will be zero.

𝑉𝑜 Active
region Voltage gain of an amplifier,
Δ𝑉𝑜
Cut off
𝐴𝑉 =
Δ𝑉𝑖
region ∆𝑉𝑜 Saturation
region
• Δ𝑉𝑜 and Δ𝑉𝑖 are out of phase.
∆𝑉𝑖

𝑉𝑖
 Applying Kirchhoff’s law for loop 1

𝑉𝐵𝐵 = 𝐼𝐵𝑅𝐵 + 𝑉𝐵𝐸

𝐼𝐶 𝑉𝑖 = 𝐼𝐵𝑅𝐵 + 𝑉𝐵𝐸 [𝑉𝐵𝐵 = 𝑉𝑖]

𝐼𝐵 𝐶
𝑅𝐵 ∆𝑉𝑖 = ∆𝐼𝐵𝑅𝐵 + ∆𝑉𝐵𝐸
𝐵 𝑅𝐶
𝑉𝑜 ∆𝑉𝐵𝐸
𝐸 ∆𝑉𝑖 = ∆𝐼𝐵𝑅𝐵 + ∆𝐼𝐵𝑟𝑖 ∴ 𝑟 =
𝑉 1 𝑉𝐶𝐶 ∆𝐼𝐵
𝑉𝐵𝐵 𝐼𝐸
∆𝑉𝑖 = ∆𝐼𝐵 𝑅𝐵 + 𝑟𝑖 … (1)

• Since 𝑟𝑖 keeps on changing as we change the voltage across 𝐵𝐸 junction, it is known as

dynamic resistance of 𝐵𝐸 junction.
 Applying Kirchhoff’s law for loop 2
𝐼𝐶
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 ⇒ 𝑉𝑂 = 𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
𝐼𝐵 𝐶
𝑅𝐵
𝑅𝐶 ∆𝑉0 = −∆𝐼𝐶 𝑅𝐶 … (2)
𝐵
𝑉𝑜
𝐸 Voltage gain of an amplifier,
𝑉𝑖 1 𝑉𝐶𝐶
2
𝑉𝐵𝐵 𝐼𝐸 Δ𝑉𝑜 −∆𝐼𝐶 𝑅𝐶 𝑅𝐶
𝐴𝑉 = = = −𝛽𝑎𝑐
Δ𝑉𝑖 ∆𝐼𝐵 𝑅𝐵 + 𝑟𝑖 𝑅𝐵 + 𝑟
𝑖
• 𝑟𝑖 can be neglected as compared to 𝑅𝐵 .

Voltage gain of an amplifier(𝐴𝑣 ): Power gain / Power Amplification (𝐴𝑝):

𝑅𝐶 𝑅𝐶
𝐴𝑣 = −𝛽 𝐴𝑝 = 𝛽 × 𝐴𝑣 = −𝛽2
𝑅𝐵 𝑅𝐵

• The negative sign represents that output voltage is opposite in phase with respect to input
voltage.
 Feedback is a network which takes sample of output signal (which may be
voltage or current) and feeds back to the input.

• Due to external disturbances, the input signal keeps on fluctuating and

thereby, affecting the output.

• To maintain the accurate output, some of the output is taken and fed back to
the input signal as an error signal so that the damping can be compensated.
Oscillators are electronic circuits that generate a continuous
periodic waveform at a precise frequency.

Antenna

1
𝑓=
2𝜋√𝐿𝐶
 Damped Signal Undamped Signal

• The oscillation whose amplitude • The oscillation whose amplitude

decreases gradually with time. remain constant.

• Oscillation does not continue • There are no power losses. Hence

for a longer time. oscillation can move for a long time.
 Damped
Signal

Combination of
resistors

• The current flowing in the circuit encounters resistance, due to which the energy is dissipated
in the form of heat. Hence, the magnitude of the signal keep on decreasing and we get a
damped oscillation.
Construction:

• 𝑛-𝑝-𝑛 transistor in 𝐶𝐸 mode, such that, 1 𝑇1 Mutual inductance

(Coupling through
Base-Emitter junction: Forward biased. magnetic field)
Base-Collector junction: Reverse biased.
C 2
• 𝐿-𝐶 circuit is connected on the output
𝑁 Out put

+
𝑃
side. 𝑇2′
B 𝑁 3
• 𝑇1 inductor is connected on the input
side. E 𝑇2
C
L
• Inductors 𝑇1 and 𝑇2 are mutually 𝑉𝐵𝐵 𝑉𝐶𝐶 4
coupled by winding them on a soft + − Soft iron core
iron core. The output is extracted from
the inductor 𝑇2′ . 𝑆1
 1 𝑇1 𝐼𝐶

C 2
𝑁 Out p ut
+

𝑃
B 𝑁 3 𝑇2′ 𝑡
E 𝑇2 𝐼𝐸
C
L
𝑉𝐵𝐵 𝑉𝐶𝐶 4
+ −
𝑆1
𝑡

• By this way, the collector current oscillates b/w a maximum (i.e., the saturation value)
and zero value. Therefore, we get an output that has a constant amplitude.
 1 𝑇1

C 2
• Feedback is accomplished by inductive 𝑁 Out put
coupling from one coil winding (𝑇1 ) to

+
𝑃
another coil winding (𝑇2 ). 𝑇2′
B 𝑁 3

• Transistor state keeps changing between E

C
𝑇2
cut-off and saturation region.
L
𝑉𝐵𝐵 𝑉𝐶𝐶 4
+ −
𝑆1
 Analog signal Digital signal

• Continuous value of voltage • Only discrete value of voltages

or current ( 0 → 0 𝑉, 1 → 5 𝑉)

𝑉 𝑉
1
𝑡
0
𝑡

• In amplifiers, oscillators etc. • Digital watches, computers,

robots etc.

• In Digital Electronics, we deal with two (binary) levels of voltages, i.e. Digital signals.
 Binary System:A system with 2 states only 0 𝑜𝑟 1.

𝑂𝑁 𝑂𝐹𝐹

TRUE FALSE

1 0

• A binary number system uses only two digits 0 and 1. Each binary digit is called a bit.

• The base of binary number system is 2, instead of 10 which is the base in decimal
number system.
• A logic gate is a digital circuit that follows certain logical relationship
between input and output voltages.

• Logic gates are made of different combinations of diodes or transistors.

Logic Gates

𝑁𝑂𝑇 𝑂𝑅 𝐴𝑁𝐷 𝑁𝐴𝑁𝐷 𝑁𝑂𝑅

 𝑵𝑶𝑻 Gate 𝑶𝑹 Gate 𝑨𝑵𝑫 Gate
𝐴 𝐴
𝐴 𝑌 = 𝐴ҧ 𝑌 =𝐴+𝐵 𝑌 = 𝐴. 𝐵
𝐵 𝐵

𝑌 = 𝐴 𝑂𝑅 𝐵 𝑌 = 𝐴 𝐴𝑁𝐷 𝐵
𝑌 = 𝑁𝑂𝑇 𝐴
𝑌 =𝐴+𝐵 𝑌 =𝐴∙𝐵
𝑌 = 𝐴ҧ
Truth Table: Truth Table:

Truth Table: 𝐴 𝐵 𝑌 𝐴 𝐵 𝑌

0 0 0 0 0 0
𝐴 𝑌
0 1 1 0 1 0
0 1
1 0 1 1 0 0
1 0 1
1 1 1 1 1
 𝑵𝑨𝑵𝑫 Gate 𝑵𝑶𝑹 Gate
𝐴 𝐴
𝑌 = 𝐴. 𝐵 𝑌 =𝐴+𝐵
𝐵 𝐵

𝑌 = 𝐴. 𝐵 𝑌 =𝐴+𝐵

Truth Table: Truth Table:

𝐴 𝐵 𝐴. 𝐵 𝑌 𝐴 𝐵 𝐴+𝐵 𝑌

0 0 0 1 0 0 0 1

0 1 0 1 0 1 1 0

1 0 0 1 1 0 1 0
1 1 1 0 1 1 1 0
𝑁𝑂𝑅 gate 𝑁𝐴𝑁𝐷 gate
 OR Laws: 𝐴+0 =𝐴 𝐴+1=1 𝐴+𝐴=𝐴 𝐴 + 𝐴ҧ =
1

AND Laws: 𝐴∙0=0 𝐴∙1=𝐴 𝐴∙𝐴=𝐴 𝐴 ∙ 𝐴ҧ =

0

Compliment Laws: 𝐴Ӗ =
𝐴

Commutative property: Associative property: Distributive property:

𝐴+𝐵 =𝐵+𝐴 𝐴∙ 𝐵∙𝐶 = 𝐴∙𝐵 ∙𝐶 𝐴∙ 𝐵+𝐶 = 𝐴∙𝐵+𝐴∙𝐶

𝐴∙𝐵 =𝐵∙𝐴 𝐴+ 𝐵 +𝐶 = 𝐴+𝐵 +𝐶 𝐴+𝐵 ∙ 𝐶 +𝐷 = 𝐴∙𝐶 +𝐴∙𝐷+𝐵∙𝐶+𝐵∙𝐷

First theorem:

The compliment of the sum of two variables is equal to the product of the
compliment of each variable.

𝐴 + 𝐵 = 𝐴ҧ. 𝐵ത

Second theorem:

The complement of the product of two variables is corresponding to the sum of the
complement of each variable.

ത
𝐴 ∙ 𝐵 = 𝐴ҧ + 𝐵
T

𝑌 = 𝐴. 𝐵 + 𝐵 . (𝐴. (𝐴. 𝐵))

Applying De-Morgan’s Theorem,

𝑌 = (𝐴. 𝐵 + 𝐵) + (𝐴. 𝐴. 𝐵 )

𝑌 = ((𝐴. 𝐵). 𝐵ത) + (𝐴. (𝐴. 𝐵))

𝑌 = (𝐴. 𝐵. 𝐵ത) + (𝐴. (𝐴ҧ (∵ 𝐵. 𝐵ത= 0)

+ 𝐵ത)
𝑌 = 𝐴. 𝐴ҧ +
ത
𝐴. 𝐵

𝑌 = 𝐴. 𝐵ത
𝐴 𝐴 𝐴+𝐵
𝐵 𝐴
𝐵 𝑌 = 𝐴 + 𝐵 ∙ (𝐴 ∙ 𝐵) 𝑌
𝐴 𝐵

𝐵 (𝐴 ∙ 𝐵) 𝑌 = 𝐴 + 𝐵 . 𝐴. 𝐵 = 𝐴 ∙ 𝐵ത+ 𝐵 ∙
𝐴ҧ
Truth Table:

𝑌 = 𝐴 + 𝐵 ∙ (𝐴 ∙ 𝐵) 𝐴 𝐵 𝑌
𝑌 = 𝐴 + 𝐵 ∙ (𝐴ҧ + 𝐵ത)
0 0 0
𝑌 = 𝐴 ∙ 𝐴ҧ + 𝐴 ∙ 𝐵ത+ 𝐵 ∙ 𝐴ҧ +
ത
𝐵∙𝐵 0 1 1
𝑌 = 𝐴 ∙ 𝐵ത+ 𝐵 ∙ 𝐴ҧ
1 0 1
Conclusion: If both inputs are same, output is low. 1 1 0
 𝐴 𝑁𝑂𝑅
𝐴 𝐴+𝐵
𝐴
𝐵 𝑌
𝐵
𝐵
𝐴 𝑌=𝐴+𝐵+𝐴∙𝐵
𝑂𝑅
𝐴∙𝐵 𝑌 = (𝐴 ∙ 𝐵) + (𝐴 + 𝐵)
𝐵
𝐴𝑁𝐷
Truth Table:

𝑌 = (𝐴 ∙ 𝐵) + (𝐴 + 𝐵) 𝐴 𝐵 𝑌
Using De-Morgan’s Theorem, 0 0 1
𝑌 = 𝐴 ∙ 𝐵 + (𝐴ҧ. 𝐵ത) 0 1 0

1 0 0
Conclusion: If both inputs are same, output is high 1 1 1
 The logic circuit shown below has the input waveforms ‘𝐴’ and ‘𝐵’ as shown.
T Pick out the correct output waveform.

𝑌 = 𝐴ҧ
+ത𝐵
𝑌 = 𝐴∙𝐵 ∵ 𝐴 ∙ 𝐵 = 𝐴ҧ
+ത𝐵
𝑌=𝐴∙𝐵

Truth Table:
1 1 1
Input 𝐴
0 0 0 0

Input 𝐵 1 1 1 1
0 0 0

1 1
𝑌 0 0 0 0 0