SiT9120

Standard Frequency Differential Oscillator

Features Applications
 31 standard frequencies from 25 MHz to 212.5 MHz  10GB Ethernet, SONET, SATA, SAS, Fibre Channel,
 LVPECL and LVDS output signaling types PCI-Express
 0.6 ps RMS phase jitter (random) over 12 kHz  Telecom, networking, instrumentation, storage, server
to 20 MHz bandwidth
 Frequency stability as low as ±10 ppm
 Industrial and extended commercial temperature ranges
 Industry-standard packages: 3.2 x 2.5, 5.0 x 3.2 and
7.0 x 5.0 mm x mm
 For any other frequencies between 1 to 625 MHz,
refer to SiT9121 and SiT9122 datasheet

Electrical Characteristics
Table 1. Electrical Characteristics
Parameters Symbol Min. Typ. Max. Unit Condition
LVPECL and LVDS, Common Electrical Characteristics
Supply Voltage Vdd 2.97 3.3 3.63 V
2.25 2.5 2.75 V
2.25 – 3.63 V Termination schemes in Figures 1 and 2 - XX ordering code
Output Frequency Range f 25 – 212.5 MHz See list of standard frequencies
Frequency Stability F_stab -10 – +10 ppm Inclusive of initial tolerance, operating temperature,
-20 – +20 ppm rated power supply voltage, and load variations

-25 – +25 ppm

-50 – +50 ppm
First Year Aging F_aging1 -2 – +2 ppm 25°C
10-year Aging F_aging10 -5 – +5 ppm 25°C
Operating Temperature Range T_use -40 – +85 °C Industrial
-20 – +70 °C Extended Commercial
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high
2 – – MΩ Pin 1, ST logic low
Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value.
Resume Time T_resume – 6 10 ms In Standby mode, measured from the time ST pin crosses
50% threshold.
Duty Cycle DC 45 – 55 % Contact SiTime for tighter duty cycle
LVPECL, DC and AC Characteristics
Current Consumption Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Output Disable Leakage Current I_leak – – 1 A OE = Low
Standby Current I_std – – 100 A ST = Low, for all Vdds
Maximum Output Current I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT-
Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1(a)
Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1(a)
Output Differential Voltage Swing V_Swing 1.2 1.6 2.0 V See Figure 1(b)
Rise/Fall Time Tr, Tf – 300 500 ps 20% to 80%, see Figure 1(a)
OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds

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SiT9120 Standard Frequency Differential Oscillator

Table 1. Electrical Characteristics (continued)

Parameter Symbol Min. Typ. Max. Unit Condition
LVDS, DC and AC Characteristics
Current Consumption Idd – 47 55 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Differential Output Voltage VOD 250 350 450 mV See Figure 2
Output Disable Leakage Current I_leak – – 1 A OE = Low
Standby Current I_std – – 100 A ST = Low, for all Vdds
VOD Magnitude Change VOD – – 50 mV See Figure 2
Offset Voltage VOS 1.125 1.2 1.375 V See Figure 2
VOS Magnitude Change VOS – – 50 mV See Figure 2
Rise/Fall Time Tr, Tf – 495 600 ps 20% to 80%, see Figure 2
OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies,
T_oe = 100ns + 3 period
RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds

Table 2. Pin Description

Pin Map Functionality
Top View
NC NA No Connect; Leave it floating or connect to GND
for better heat dissipation
H or Open: specified frequency output NC/OE/ST 1 6 VDD
1 OE Input
L: output is high impedance
H or Open: specified frequency output NC 2 5 OUT-
ST Input
L: Device goes to sleep mode. Supply current reduces to I_std.
No Connect; Leave it floating or connect to GND for better heat
2 NC NA GND 3 4 OUT+
dissipation
3 GND Power VDD Power Supply Ground
4 OUT+ Output Oscillator output
Figure 1. Pin Assignments
5 OUT- Output Complementary oscillator output
6 VDD Power Power supply voltage

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Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge (HBM) – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C

[1]
Table 4. Thermal Consideration
Package JA, 4 Layer Board (°C/W) JC, Bottom (°C/W)
7050, 6-pin 142 27
5032, 6-pin 97 20
3225, 6-pin 109 20

Note:
1. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.

Table 5. Maximum Operating Junction Temperature[2]

Max Operating Temperature (ambient) Maximum Operating Junction Temperature

70°C 90°C
85°C 105°C

Note:
2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter Condition/Test Method

Mechanical Shock MIL-STD-883F, Method 2002

Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C

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Waveform Diagrams

OUT-

80% 80%

20% 20% VOH

OUT+

VOL
Tr Tf

GND

Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)

V_ Swing

0V
t

Figure 1(b). LVPECL Voltage Levels Across Differential Pair

OUT-

80% 80%

VOD

20% 20%

OUT+
VOS

Tr Tf

GND

Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)

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SiT9120 Standard Frequency Differential Oscillator

Termination Diagrams
LVPECL
VDD

OUT+ Z0 = 50  D+

LVPECL Driver Receiver Device

OUT- Z0 = 50  D-

50  50 

VTT = VDD – 2.0 V

Figure 3. LVPECL Typical Termination

VDD VDD= 3.3V => R1 = 100 to 150 

VDD= 2.5V => R1 = 75 
100 nF
OUT+ Z0 = 50  D+

LVPECL Driver Receiver Device

100 nF
OUT- Z0 = 50  D-

R1 R1
50  50 

VTT

Figure 4. LVPECL AC Coupled Termination

VDD = 3.3V => R1 = R3 = 133  and

R2 = R4 = 82 
VDD
VDD = 2.5V => R1 = R3 = 250  and
R2 = R4 = 62.5 

VDD R1 R3

OUT+ Z0 = 50  D+

LVPECL Driver Receiver Device

OUT- Z0 = 50  D-

R2 R4

Figure 5. LVPECL with Thevenin Typical Termination

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Termination Diagrams (continued)

LVDS
VDD

OUT+ Z0 = 50  D+

LVDS Driver 100  Receiver Device

OUT- Z0 = 50  D-

Figure 6. LVDS Single Termination (Load Terminated)

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SiT9120 Standard Frequency Differential Oscillator

Dimensions and Patterns

[4]
Package Size – Dimensions (Unit: mm)[3] Recommended Land Pattern (Unit: mm)

3.2 x 2.5 x 0.75 mm

2.25
3.2±0.05 2.20
#6 #5 #4 #4 #5 #6

2.5±0.05

0.9

1.6
YXXXX
YXXXX

0.7

1.00
#1 #2 #3 #3 #2 #1
0.6
0.65 1.05
0.75±0.05

5.0 x 3.2 x 0.75 mm

5.0±0.10 2.54
#6 #5 #4 #4 #5 #6
3.2±0.10

1.20

YXXXX
YXXXX 0.90

#1 #2 #3 #3 #2 #1
0.64

0.75±0.05

7.0 x 5.0x 0.90 mm

7.0±0.10 5.08
5.08
#6 #5 #4 #4 #5 #6
5.0±0.10
2.60

1.10

3.80

YXXXX
YXXXX
#1 #2 #3 #3 #2 #1 1.60
1.40
1.60
0.90 ±0.10

Notes:
3. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
4. A capacitor of value 0.1 F between Vdd and GND is recommended.

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SiT9120 Standard Frequency Differential Oscillator

Ordering Information

SiT9120AC-1C2-33E125.000000T

Packaging:
Part Family “T”, “Y”, “X”, “D”, “E”, or “G”
“SiT9120” Refer to table below for
packing method
Leave Blank for Bulk
Revision Letter
“A” is the revision of Silicon Frequency
See Supported Frequency list
below
Temperature Range
“I” Industrial, -40 to 85°C Feature Pin
“C” Extended Commercial, -20 to 70°C “N” for No Connect
“E” for Output Enable
“S” for Standby
Signalling Type
“1” = LVPECL Voltage Supply
“2” = LVDS “25” for 2.5V ±10%
“33” for 3.3V ±10%
“XX” for 2.25V to 3.63V
Package Size
“B” 3.2 x 2.5 mm x mm Frequency Stability
“C” 5.0 x 3.2 mm x mm
“F” for ±10 ppm
“D” 7.0 x 5.0 mm x mm
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm

Table 7. List of Supported Frequencies

25.000000 MHz 50.000000 MHz 74.175824 MHz 74.250000 MHz 75.000000 MHz 98.304000 MHz 100.000000 MHz 106.250000 MHz
125.000000 MHz 133.000000 MHz 133.300000 MHz 133.330000 MHz 133.333000 MHz 133.333300 MHz 133.333330 MHz 133.333333 MHz
148.351648 MHz 148.500000 MHz 150.000000 MHz 155.520000 MHz 156.250000 MHz 161.132800 MHz 166.000000 MHz 166.600000 MHz
166.660000 MHz 166.666000 MHz 166.666600 MHz 166.666660 MHz 166.666666 MHz 200.000000 MHz 212.500000 MHz

Table 8. Ordering Codes for Supported Tape & Reel Packing Method
8 mm T&R 8 mm T&R 8 mm T&R 12 mm T&R 12 mm T&R 12 mm T&R 16 mm T&R 16 mm T&R 16 mm T&R
Device Size
(3ku) (1ku) (250u) (3ku) (1ku) (250u) (3ku) (1ku) (250u)
7.0 x 5.0 mm – – – – – – T Y X
5.0 x 3.2 mm – – – T Y X – – –
3.2 x 2.5 mm D E G T Y X – – –

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Table 9. Revision History

Revisions Release Date Change Summary
1.01 02/20/2013 Original
1.02 11/23/2013 Added input specifications, LVPECL/LVDS waveforms, packaging T&R options
1.03 02/06/2014 Added 8mm T&R option
1.04 03/03/2014 Added ±10 ppm
1.05 07/23/2014 Include Thermal Consideration Table
1.06 10/03/2014 Modified Thermal Consideration values
1.07 01/09/2017 Included Maximum Operating Junction Temperature Table
Added Thermal Consideration Notes to Table
Updated logo and company address, other page layout changes
1.08 06/25/2019 Added No Connect feature to Pin 1

SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2013-2019. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.

Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.

CRITICAL USE EXCLUSION POLICY

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
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prohibited.

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Silicon MEMS Outperforms Quartz

Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

Rev 1.08 Page 10 of 13 [Link]

Silicon MEMS Outperforms Quartz

Best Reliability Best Electro Magnetic Susceptibility (EMS)

Silicon is inherently more reliable than quartz. Unlike quartz SiTime’s oscillators in plastic packages are up to 54 times
suppliers, SiTime has in-house MEMS and analog CMOS more immune to external electromagnetic fields than quartz
expertise, which allows SiTime to develop the most reliable oscillators as shown in Figure 3.
products. Figure 1 shows a comparison with quartz
technology. Why is SiTime Best in Class:

Why is SiTime Best in Class:  Internal differential architecture for best common
mode noise rejection
 SiTime’s MEMS resonators are vacuum sealed  Electrostatically driven MEMS resonator is more
using an advanced EpiSeal™ process, which immune to EMS
eliminates foreign particles and improves long
term aging and reliability
 World-class MEMS and CMOS design expertise

Reliability (Million Hours)

SiTime 1,140

IDT 38

KYCA EPSN TXC CW SLAB SiTime

EPSN 28
Figure 3. Electro Magnetic Susceptibility (EMS)[3]

Best Power Supply Noise Rejection

Figure 1. Reliability Comparison[1]
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure 4.
Best Aging
Unlike quartz, MEMS oscillators have excellent long Why is SiTime Best in Class:
term aging performance which is why every new SiTime
 On-chip regulators and internal differential
product specifies 10-year aging. A comparison is shown
in Figure 2. architecture for common mode noise rejection
 MEMS resonator is paired with advanced analog
Why is SiTime Best in Class: CMOS IC
 SiTime’s MEMS resonators are vacuum sealed
using an advanced EpiSeal™ process, which SiTime EPSN KYCA
eliminates foreign particles and improves long term
aging and reliability
 Inherently better immunity of electrostatically driven
MEMS resonator
MEMS vs. Quartz Aging
SiTimeMEMS
EpiSeal Oscillator
Oscillator QuartzOscillator
Quartz Oscillator
10

8
8
Aging (
PPM)

4
3
3.5 Figure 4. Power Supply Noise Rejection[4]
2 1.5

0
1-Year 10-Year

Figure 2. Aging Comparison[2]

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Silicon MEMS Outperforms Quartz

Best Vibration Robustness Best Shock Robustness

High-vibration environments are all around us. All SiTime’s oscillators can withstand at least 50,000 g shock.
electronics, from handheld devices to enterprise servers They all maintain their electrical performance in operation
and storage systems are subject to vibration. Figure 5 during shock events. A comparison with quartz devices is
shows a comparison of vibration robustness. shown in Figure 6.
Why is SiTime Best in Class: Why is SiTime Best in Class:
 The moving mass of SiTime’s MEMS resonators is  The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz up to 3000 times smaller than quartz
 Center-anchored MEMS resonator is the most  Center-anchored MEMS resonator is the most
robust design robust design

TXC
TXC EPS CW KYCA
KYCA SLAB EpiSeal
SiTime MEMS
100.0
Vibration Sensitivity (ppb/g)

10.0

1.0

0.1

0.0
10 100 1000
Vibration Frequency (Hz) KYCA EPSN TXC CW SLAB SiTime

Figure 5. Vibration Robustness[5] Figure 6. Shock Robustness[6]

Figure labels:
 TXC = TXC
 Epson = EPSN
 Connor Winfield = CW
 Kyocera = KYCA
 SiLabs = SLAB
 SiTime = EpiSeal MEMS

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Silicon MEMS Outperforms Quartz

Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
 According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
 Field strength: 3V/m
 Radiated signal modulation: AM 1 kHz at 80% depth
 Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
 Antenna polarization: Vertical
 DUT position: Center aligned to antenna
Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL
EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW
rd
TXC TXC BB-156.250MBE-T Quartz, 3 Overtone
rd
CW Conner Winfield P123-156.25M Quartz, 3 Overtone
KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW
SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL

4. 50 mV pk-pk Sinusoidal voltage.

Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL
NDK NDK NZ2523SB-25.6M Quartz
KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz
EPSN Epson SG-310SCF-25M0-MB3 Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
 MIL-STD-883F Method 2002
 Condition A: half sine wave shock pulse, 500-g, 1ms
 Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@[Link].

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