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Basic Electronics Notes 1 10

The document discusses the principles and characteristics of PN junction diodes, including forward and reverse bias conditions. It explains how N-type and P-type semiconductors are formed and their roles in diode functionality. Additionally, it covers the Zener diode's operation in reverse breakdown conditions and its applications in voltage regulation.

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ganesha.hs
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6 views10 pages

Basic Electronics Notes 1 10

The document discusses the principles and characteristics of PN junction diodes, including forward and reverse bias conditions. It explains how N-type and P-type semiconductors are formed and their roles in diode functionality. Additionally, it covers the Zener diode's operation in reverse breakdown conditions and its applications in voltage regulation.

Uploaded by

ganesha.hs
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
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Thus, & favge numbey of ree CLeckyony axe fprmed hich ig commonly caltedt af an Avalaanct G5 pee electrons This Leads 40 breakdown of the | junction leading to, Very Large yeveyse current+ the Neoverse voltage ak tahich the. juncien breakdown " peeuxS '§ Known as Breakdown voltage (Yep). @® How N-type and P-type semicenduckors: ave ormed. P) Nolype Semi tonductars @The semiconductors which are obtained by ited cing Pentavalent impurity akoms CX -gvoup elements) ave Called N-type Semiconduckers « * When a pentavalent impurity (P, $b, As; BI) Is added to pare Semiconductor it displaces some of the Akos G4 Shown in figure below- Gy () 4) =O O=Ol Cg ( s@) SOE Or > Free electron C) a ey SQ OL OF — —_— : (*) aS © yen ae hen (an antimony’ sb) abom AS, aided as... iF bo pure semicondactoy (St), euk of S valenco alectyons a | u atectyons” form covalent bonds with Y- si Shorts \ tre St eledton is an extra olecrom and ig Loosel | pounded with antimony atom, acls as free electyon j | a nkeer donation ek one eloctyon, impurity (gb) peterhal é posite positively charged Yon and is Knowh 8 a donor ion and do not Contribute to the conduction of qanvene > J Free electrons oe 0° O55 Holes oer oe O}= immobile donay ions 2 Semconductoy N- kyp' / majority cavriers > electives Minow by Covviers 2 eles _ ype Snicooduttors 2 Semitonductors hic alent ‘rnpurity obomes CBE type Sermicondiuctors- When o tivatent impurity ( a) Tn, miconductor sit ‘displaces He Some eb the Sh ee obtained by intreducing “group elements) are called aL, B).is added pay @ Se A From biqure when @ Boron (B) atom ts added t a pure someonduckoy (Si) y 3--valance elections off ‘ ghbouring Boren forms 3 - Cv alent bonds by ie nei St atoms. However, the fourth Covalent bond ty Incomplete. A Vatoncy 7 which exicls lo the Incorplete covalent bond constitutes a hele : ‘ ¥ Now the boron atom seeks its surrounding abomy, So ay to acapive the UM electron to complete Coucdont bond» So it accepts one election from, thermally generated charge cavvierS- So ib wilt become negative Acceptor ton after yecelving electron and do act Gontvibute £0 Conduction of Current - O° e: 0.07 ee | MORCMS) | P-type Semitonducoy ( Hapa igistile Minority > elector) @® Whak are digharent types of diode. Explain with diagrams: a 4) eo Janckion diode - é ] p-n junction diode is formed by boo blocks ok Setni conductor material j one Of p- hype somicondudey, and other off M- type comiconductoy- Tn po Yegion “Mhe hole} ave roajority charge carriers and aeckons axe minority Coviers , udhevecs in n- region ) } te dlecKo axe majority cayvievs and holes are prinori kyrconrignssnsee ola ckyons frera he in si, dive aces the juoction and bit the eee de Sirmlarly the hola ek prside Aifjuse ~ ye junckico and vecembine with Galeckrons in n-side ylence othe Yogicn chee fo Pore . fugaeen = p-side: acqpires 8 Negative charge and vegien chee yo, junckion. con nside acquives positive charge re ror OF 00 |OO1O" OO O° 2 Or/O0/©®\ o OO Oro OO}@ @| @ GO} e Si aa ae 0 popehan layev je N | Zener Diode | Zener A f Zeney diode is o PO junction dovice Hat is ed to operate in Yoverse breakdaon Yagion+ heavily doped than fhe ordinary “e-? junction TD genes piode Symbol ek 2enex vee picde + otk f: Practical equivalent eivuuit + otf wo ; Vee i : 2 Wy ! \ H | ) Dikbeventiake Totrin sic and Eat iasic Sernicon ductor, Nr is a pure Sonrcorducter| ) Te 1S ewe formed by | adding trivalent \o”) eer: nae impurity to pure Semiterd, aD Yole and elakion ave 2) No- Of holes ave more ih eqpal p-type and No-oh elekrors are. = more ig D-type 3) Ferri cana, level Lies 3) Ferm araeges Yovel Bed Neay bolueen valence bard and the Velence band 'o P-type tonduchen band and Sey neav Conductien | band in o-kype - SD what ts 2eney diede- Explain how zener Diede is wed aha yequlatoy. A) ® ener viode is o heavily doped p-o junction Aicde , duigned to conduc even in veverse bias usithouk damaging Ure pon jundion. heavily dopey Vary thin chepletion layer * Dusing fprmard iat 2oner diode acls as normal p-n junckion dicde- * During everse bies ) once the applied Yeverse : Voltage 16 greaker thon predotined Voltage ( 2eney Breakdos) i | Nz poner diode stor conducting by Maintsining | G (onstant Nolkage (V2) acrew { ey — yoltage vagublatoy : Vezve. Te” for ee 2 Voz V2 C 2enoy breakdown vol terge) Tp > Yevovsc curyent s Tya2> dene Gavvent Tr. > load cayrent ovding to Ket © : | fp2Boate and ote inpué voltage vache stl get TitF2)+¥al ‘ D We Sted Rs = Remax + Rmig , ame md z = Vetmax) —Vo oa RL Cmax) = - F_Lcmin) + Fa Cmax) Fucmin) n RiCmin) = Yo ae Ne bini Va Bcd Tea Temas) lain V-E charackevistis of Poo juction diode dence Chavackeris tis. 5 diode 1K temperature cepa yet chavackeristua of PP junction be explained undey three Casy ) reve biwed Condition 2) Forward wiewed Gon dabion + 3) Reverse biked condition: Tr Anis. care, No “etternal voltage ig applied to the (Pon junction diode 5 and thevefora, the aleckiony dliyuse to the p-Side and simattoneouy holes | Aihuse kousards the N-side through the Jueckronyand Bon combine with each they» Due to this an siete Checdbyic fad is genevated by tase charge Carvieys, — The oleic field opposes furer ditgution of charged Caxrieys go that there ig no movement in the Middle Vegi on- 2) Forward Bisued Condition 4 same as Vt oncwer. 3) Reverse Bioued condition . | Nod dhataderisics of Lov orton Diode ae cstverke Fouad eS) Bias Z| 3 voltage Forucd Ww) vollage

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