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Module 4.3std

The document discusses the behavior of the Fermi level in relation to metal work functions and its impact on charge carriers in electronic materials. It highlights how interface states at the metal-semiconductor junction can trap charge carriers and affect the Fermi level within the silicon bandgap. This information is relevant for understanding contact resistivity in electronic devices.

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3 views45 pages

Module 4.3std

The document discusses the behavior of the Fermi level in relation to metal work functions and its impact on charge carriers in electronic materials. It highlights how interface states at the metal-semiconductor junction can trap charge carriers and affect the Fermi level within the silicon bandgap. This information is relevant for understanding contact resistivity in electronic devices.

Uploaded by

abilash.01.doctor
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Electronic Materials and Devices

(BECE201L)
Module 4
Dr. Prashanth Kumar
Associate Professor, SENSE
This makes sense because when the metal Fermi level moves downward (larger work
function), it is closer to the valence band → easier for holes, harder for electrons.
contact resistivity

At the metal–semiconductor interface, interface states trap charge carriers and "pin"
the Fermi level near a fixed energy within the bandgap of Si.

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