CAMBRIDGE INSTITUTE OF TECHNOLOGY NORTH CAMPUS
Off International Airport Road, Kundana, Bengaluru – 562110
DEPARTMENT OF PHYSICS
QUANTUM PHYSICS & APPLICATIONS
QUESTION BANK
MODULE 1
1. State and Explain Heisenberg Uncertainty Principal. Explain broadening of spectral lines.
2. Describe wave function and their properties and Explain Bohr’s Complementarity principal.
3. Setup 1D time independent Schrodinger wave equation and hence give the equation in 3D
4. Using the Schrodinger wave equation for a particle in 1D infinite potential well, obtain the
eigen function and energy eigen values. Explain the role of higher dimensions.
5. Discuss the equations and solutions for a particle in 1D finite potential well and explain the
concept of the barrier penetration.
MODULE 2
1. Explain Mathissen’s rule of resistivity.
2. List the failures of CFET and give the assumptions of QFET.
3. Explain Density of states and Fermi factor. Describe the variation of Fermi factor with energy
and temperature.
4. Derive an expression for electron concentration in conductors.
5. Derive an expression for electron concentration in intrinsic semiconductors.
6. Show that the Fermi level lies at the centre of the band gap in case of an intrinsic
semiconductor with the relevant equations.
(Or)
Derive an expression for Fermi level in intrinsic semiconductors.
7. What is Hall effect? Derive an expression for hall coefficient and list its applications.
CAMBRIDGE INSTITUTE OF TECHNOLOGY NORTH CAMPUS
Off International Airport Road, Kundana, Bengaluru – 562110
DEPARTMENT OF PHYSICS
MODULE 3
1. Explain the concept of critical temperature, critical field and persistant current.
2. Dercribe Meissner effect with suitable equation and diagram.
3. Describe critical current with Silsbee’s effect with suitable diagram.
(Or)
Derive an expression for a cylindrical wire using Ampere’s law.
4. Explain the zero resistance of a superconductor using the BCS theory with the concept of
phonons, electron-phonon interaction, formation of cooper pairs and their energy gap.
5. Explain Type I and Type II superconductors using the M-H characteristics. Discuss formation
of votex state and upper critical field.
6. Using the concept of Cooper pair tunneling process and retro reflection at the N-S interface,
explain the Andreev reflection with necessary diagrams.
7. Explain the formation of the Josephson junction and hence describe DC & AC Josephson
effect with suitable diagrams.
8. Give a qualitative account of DC & RF SQUIDs with necessary diagrams. List their
applications.
MODULE 4
1. Derive an expression for energy density in terms of Einstein A and B coefficients.
2. Describe the principle, construction and working of semiconductor diode laser with a
schematic and relevant energy level diagram.
3. Describe how Electro-Optic modulators use Pockel’s and Kerr Effect for phase modulation
with the relevant diagram.
4. Describe the construction and working of Single Photon Avalanche Diode with a neat
diagram. (SPAD)
5. Describe the construction and working of Superconducting Nanowire Single photon diode
(SNSPD) with neat diagram.
CAMBRIDGE INSTITUTE OF TECHNOLOGY NORTH CAMPUS
Off International Airport Road, Kundana, Bengaluru – 562110
DEPARTMENT OF PHYSICS
6. Derive an expression for acceptance angle and numerical aperture with a neat diagram.
7. What is meant by attenuation? Mention its equation and also explain the factors affecting the
losses with relevant diagrams.
8. Describe the principle and working of Mach-Zehnder interferometer with a neat labeled
diagram.
MODULE 5
1. Explain Moore’s law and list the limitations of VLSI
2. Distinguish between Classical and Quantum Computation.
3. With a neat labeled diagram, explain the representation of Qubit using Bloch Sphere. Discuss
different cases.
4. Explain harmonic oscillator and its need for anharmonicity along with a relevant diagram.
5. Mention the matrix representation of |0〉 and |1〉 states and apply the identity operator to show
there is no change in state.
6. State Pauli’s Matrices and apply them on |0〉 and |1〉
7. Explain the operation of Pauli Gates (X Y Z), Phase gate (S, T), Hadamard Gate (H) on |0〉
and |1〉 states with the relevant circuit symbols, matrix representation and the truth table.
( Each 5 marks).
8. Explain the action of CNOT gate on |0〉 and |1〉 states with the relevant circuit symbols,
matrix representation and the truth table.
Prepared by:
Department of Physics
CITNC