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Chapter4 Memory Notes

Chapter 4 discusses computer memory hierarchy, classification, and types, detailing the organization and access methods of various memory types such as RAM, cache, ROM, and external storage. It also covers RAID configurations for data redundancy and performance, as well as optical and magnetic storage options. Key formulas and facts related to memory organization and performance are provided for quick reference.

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0% found this document useful (0 votes)
3 views8 pages

Chapter4 Memory Notes

Chapter 4 discusses computer memory hierarchy, classification, and types, detailing the organization and access methods of various memory types such as RAM, cache, ROM, and external storage. It also covers RAID configurations for data redundancy and performance, as well as optical and magnetic storage options. Key formulas and facts related to memory organization and performance are provided for quick reference.

Uploaded by

zelalembetelhem7
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

Chapter 4 — Memory | Study Notes

Chapter 4: Memory
Complete Study Notes

1. Memory Hierarchy
Computer memory is arranged in layers — fastest and smallest at the top, slowest and largest at the
bottom.

Levels (top to bottom)


• Processor Registers — inside the CPU; fastest; holds data being used right now
• Cache (L1, L2, L3) — small, fast; copies of recently used RAM data
• Main Memory (RAM) — large working memory; volatile; directly accessible by CPU
• External Storage — hard disks, SSDs, optical, tape; non-volatile; huge capacity

Key Relationships
• Faster access time = greater cost per bit
• Greater capacity = smaller cost per bit
• Greater capacity = slower access time

Why the Hierarchy Works — Locality of Reference


• Temporal locality — if a location is accessed, it will likely be accessed again soon (e.g. loops)
• Spatial/Positional locality — nearby memory locations are also likely to be accessed soon
(e.g. arrays)

2. Memory Classification Characteristics


1. Location
• Internal — registers, cache, RAM (directly accessible by CPU)
• External — hard disks, CD/DVD, tape (accessed via I/O controller)
2. Capacity
• Internal memory measured in bytes or words (1 word = 8/16/32/64 bits)
• Address space formula: N = 2ᴬ, where N = address space size, A = address length in bits
• Disks use blocks or clusters as addressable units
3. Access Methods
• Sequential — must read from beginning in order (e.g. magnetic tape)
• Direct — go near the location, then search (e.g. disk drives)
• Random — any location accessed directly in constant time (e.g. RAM)
• Associative — locate data by comparing content, not address (e.g. cache)
4. Performance
• Access time (latency) — time from address presented to data available
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Chapter 4 — Memory | Study Notes
• Memory cycle time — access time + recovery time before next access
• Transfer rate — bits per second moved into/out of memory
5. Physical Types
• Semiconductor RAM (DRAM/SRAM), Magnetic Disk & Tape, Optical (CD/DVD), Flash
6. Physical Characteristics
• Volatile — data lost when power removed (RAM)
• Non-volatile — data retained without power (disk, flash, ROM)
• Non-erasable — cannot be changed (ROM)
7. Organization
• The physical arrangement of bits to form words; a key design issue for RAM

3. Cache Memory
Cache sits between the CPU and main memory. It holds copies of recently used data from RAM so the
CPU gets near-instant access instead of waiting for slow RAM.

Cache Hit vs Miss


• Hit — requested word is found in cache; returned immediately (fast)
• Miss — word not in cache; entire block is fetched from RAM into cache, then returned

Cache Address Types


• Logical/Virtual cache — stores data by virtual address; CPU accesses directly without MMU
• Physical cache — stores data by physical (real RAM) address; MMU translates first

Cache Size Trade-off


• Larger cache = more expensive
• Larger cache = faster, up to a point — then slows because searching takes longer

Mapping Functions — How blocks map to cache lines

A. Direct Mapping
Each memory block maps to exactly one cache line.
Formula: i = j mod m (i = cache line, j = block number, m = total cache lines)

24-bit address breakdown:


• 2 bits = Word (which word within the block)
• 14 bits = Line number (which cache line to check)
• 8 bits = Tag (which block from all those that share this line)

Advantage: Simple and inexpensive


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Chapter 4 — Memory | Study Notes
Disadvantage: Two blocks sharing the same line will keep evicting each other (thrashing)

B. Associative Mapping
Any memory block can load into any cache line. No fixed assignment.
Address = 2-bit word + 22-bit tag (no line field — any line is possible)

• All tags are checked simultaneously (parallel hardware comparators)


• Very flexible, highest hit rate
• Expensive and complex — impractical for large caches

C. Set Associative Mapping (Best Balance)


Cache is divided into v sets, each containing k lines. m = v × k
Formula: i = j mod v (block maps to one set, but any line within that set)

• Most common: 2-way set associative (k=2 lines per set)


• 24-bit address: 9-bit tag + 13-bit set number + 2-bit word
• Significantly better hit rate than direct mapping, less hardware than full associative

Replacement Algorithms (when cache is full)


• LRU (Least Recently Used) — evict the block unused for the longest time [most effective]
• FIFO (First In First Out) — evict the oldest block in cache
• LFU (Least Frequently Used) — evict the block accessed fewest times
• Random — evict a random block [simple, surprisingly effective]

Write Policies
• Write Through — every cache write also immediately writes to RAM. RAM always current.
Generates heavy bus traffic.
• Write Back — writes only go to cache; RAM updated only when the modified block is evicted
(UPDATE bit). Less traffic, but RAM can be temporarily stale.

Line Size
• Optimal range: 8 to 64 bytes
• Larger blocks exploit spatial locality but reduce number of cached blocks

Multilevel Caches
• L1 cache — smallest, fastest, on-chip (per core)
• L2 cache — larger, slightly slower, on-chip
• L3 cache — largest, shared among all cores, still on-chip in modern CPUs

Unified vs Split Caches


• Unified — one cache for both instructions and data; auto-balances; simpler

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Chapter 4 — Memory | Study Notes
• Split — separate instruction cache (I-cache) and data cache (D-cache) at L1; eliminates
contention between fetch and execution units

4. Internal Memory — Semiconductor RAM


All Memory Cells Share These Properties
• Two stable states representing 0 and 1
• Can be written to (at least once)
• Can be read

DRAM — Dynamic RAM


• Stores each bit as charge in a capacitor (1 = charged, 0 = uncharged)
• Capacitors leak — must be periodically refreshed
• Simple (1 transistor + 1 capacitor per bit) — very dense and cheap
• Used for: Main memory

SRAM — Static RAM


• Stores each bit using flip-flop logic circuits
• Holds data as long as power is supplied — no refresh needed
• Faster than DRAM
• More complex (4–6 transistors per bit) — less dense, more expensive
• Used for: Cache memory

SRAM vs DRAM Summary


• Both are volatile (data lost on power off)
• DRAM: denser, cheaper, slower (needs refresh) → main memory
• SRAM: faster, more expensive, no refresh → cache

5. Read-Only Memory (ROM) Types


ROM is non-volatile — retains data without power. Data is written at manufacture and cannot normally
be changed.

ROM — Read-Only Memory


• Data permanently wired in during chip fabrication
• Cannot be altered (would require destroying the chip)
• Problems: high fixed cost; any single wrong bit ruins the batch

PROM — Programmable ROM

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Chapter 4 — Memory | Study Notes
• Written once electrically by the user after manufacture (using a PROM programmer device)
• Non-volatile; more flexible than ROM

EPROM — Erasable Programmable ROM


• Erased by exposing chip to UV light (up to 20 minutes) through a quartz window
• Then reprogrammed electrically
• Can be erased and reprogrammed many times
• More expensive than PROM

EEPROM — Electrically Erasable Programmable ROM


• Erased and written electrically — no UV light needed
• Can update individual bytes without erasing the whole chip
• Writes are slower (hundreds of microseconds per byte)
• More expensive and less dense than EPROM

Flash Memory
• Between EPROM and EEPROM in cost and functionality
• Electrically erased — entire chip or individual blocks (not individual bytes)
• Erases in seconds (much faster than EPROM's UV method)
• Same density as EPROM
• Used in: USB drives, SD cards, SSDs

6. External Memory — Magnetic Disk


A disk is a circular platter of non-magnetic substrate (aluminum or glass) coated with magnetizable
material. Data is stored as magnetic regions.

Data Organization on Disk


• Tracks — concentric rings on the platter surface (thousands per surface)
• Sectors — tracks divided into sectors, typically 512 bytes each
• Intertrack gaps — separate adjacent tracks to prevent read errors
• Intersector gaps — separate adjacent sectors

CAV — Constant Angular Velocity


• Disk spins at fixed RPM
• Outer tracks have longer physical length — bits are spaced farther apart to compensate
• Disadvantage: outer tracks store same amount of data as inner tracks — space is wasted

Disk Access Time Components


• Seek time — time for head to move to the correct track
• Rotational latency — wait for the right sector to spin under the head

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Chapter 4 — Memory | Study Notes
• Transfer time — time to actually read/write the data

7. RAID — Redundant Array of Independent Disks


RAID uses multiple disks to improve performance and/or reliability. Parity data allows recovery if a disk
fails.

RAID 0 — Striping
• Minimum 2 disks
• Data is striped (spread evenly) across all disks — reads/writes happen in parallel
• Excellent performance
• No redundancy — if one disk fails, ALL data is lost
• Use only for non-critical data

RAID 1 — Mirroring
• Minimum 2 disks
• Every block is written identically to both disks
• Excellent redundancy — if one disk fails, the other has a perfect copy
• Good performance; costs 50% of total disk space

RAID 5 — Striping with Distributed Parity


• Minimum 3 disks
• Data is striped; parity is distributed across all disks (no single parity disk bottleneck)
• Can survive failure of any one disk
• Best cost-effective balance of performance and redundancy
• Ideal for read-heavy databases; write performance is lower (parity must be recalculated)

RAID 10 — Stripe of Mirrors (RAID 1+0)


• Minimum 4 disks
• Mirrors pairs of disks, then stripes across the mirror pairs
• Excellent redundancy AND excellent performance
• Best option for mission-critical applications (e.g. databases) if cost allows
• Costs 50% of total disk space

8. Optical Memory
CD-ROM
• Non-erasable; stores ~700 MB
• Data recorded as microscopic pits on polycarbonate using a laser

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Chapter 4 — Memory | Study Notes
• Pits vs lands (flat areas) read by a low-power laser + photosensor
• Read-only — cannot be changed after manufacture

CD-R (Write-Once)
• Written once with a laser; can then be read many times
• Compatible with standard CD-ROM drives
• Ideal for permanent archival storage

CD-RW (Rewritable)
• Uses phase change material — laser switches it between two reflectivity states
• Can be written and overwritten repeatedly

DVD
• Greater capacity than CD: up to 4.7 GB (single layer), 8.5 GB (dual layer), 17 GB (double-sided)
• Bits packed more closely using a red laser (shorter wavelength)
• Available read-only, write-once, and rewritable versions

Blu-ray
• Uses blue-violet laser (shorter wavelength than DVD) — smaller pits, higher density
• Single layer: 25 GB
• Versions: BD-ROM (read-only), BD-R (write-once), BD-RE (rewritable)

9. Magnetic Tape & Flash as External Storage


Magnetic Tape
• Oldest secondary memory type
• Flexible polyester tape coated with magnetizable material
• Sequential access only — must read from beginning
• Lowest cost, slowest speed in the memory hierarchy
• Used for: offline backups, archival storage

Flash Memory (External)


• Used in SD cards (SD, mini-SD, micro-SD), USB drives
• Non-volatile — retains data without power
• USB flash drives connect via USB interface
• Memory cards used in: cameras, phones, MP3 players

Quick Reference — Key Formulas & Facts


• Address space: N = 2ᴬ (N = locations, A = address bits)
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Chapter 4 — Memory | Study Notes
• Direct mapping: i = j mod m (cache line = block number mod cache size)
• Set associative: i = j mod v (set = block number mod number of sets)
• Memory blocks: M = 2ⁿ / K (n = address bits, K = words per block)
• Optimal cache line size: 8 to 64 bytes
• DRAM refresh needed; SRAM does not need refresh
• RAID 0 = best speed, no redundancy
• RAID 1 = best redundancy, 50% storage cost
• RAID 5 = best cost-effective balance
• RAID 10 = best overall, 50% storage cost
• Flash: no byte-level erasure (whole block or chip)
• EEPROM: byte-level erasure possible

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