SiT9121

1-220 MHz High Performance Differential Oscillator

The Smart Timing Choice
The Smart Timing Choice

Features Applications
 Any frequency between 1 MHz and 220 MHz accurate to 6 decimal  10GB Ethernet, SONET, SATA, SAS, Fibre Channel,
places PCI-Express
 LVPECL and LVDS output signaling types  Telecom, networking, instrumentation, storage, servers
 0.6ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth
 Frequency stability as low as ±10 ppm
 Industrial and extended commercial temperature ranges
 Industry-standard packages: 3.2x2.5, 5.0x3.2 and 7.0x5.0 mmxmm
 For frequencies higher than 220 MHz, refer to SiT9122 datasheet

Electrical Characteristics
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
LVPECL and LVDS, Common Electrical Characteristics
Supply Voltage Vdd 2.97 3.3 3.63 V
2.25 2.5 2.75 V
2.25 – 3.63 V Termination schemes in Figures 1 and 2 - XX ordering code
1.71 1.8 1.89 V Only for LVDS output
Output Frequency Range f 1 – 220 MHz
Frequency Stability F_stab -10 – +10 ppm
-20 – +20 ppm Inclusive of initial tolerance, operating temperature, rated power
-25 – +25 ppm supply voltage, and load variations
-50 – +50 ppm
First Year Aging F_aging1 -2 – +2 ppm 25°C
10-year Aging F_aging10 -5 – +5 ppm 25°C
Operating Temperature Range T_use -40 – +85 °C Industrial
-20 – +70 °C Extended Commercial
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high
2 – – MΩ Pin 1, ST logic low
Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value.

Resume Time T_resume – 6 10 ms In Standby mode, measured from the time ST pin crosses
50% threshold.
Duty Cycle DC 45 – 55 % Contact SiTime for tighter duty cycle
LVPECL, DC and AC Characteristics
Current Consumption Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Output Disable Leakage Current I_leak – – 1 A OE = Low
Standby Current I_std – – 100 A ST = Low, for all Vdds
Maximum Output Current I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT-
Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1(a)
Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1(a)
Output Differential Voltage Swing V_Swing 1.2 1.6 2.0 V See Figure 1(b)
Rise/Fall Time Tr, Tf – 300 700 ps 20% to 80%, see Figure 1(a)
OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
LVDS, DC and AC Characteristics
Current Consumption Idd – 47 55 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Differential Output Voltage VOD 250 350 450 mV See Figure 2

SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 [Link]

Rev. 1.06 Revised October 20, 2014

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Electrical Characteristics (continued)

Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
LVDS, DC and AC Characteristics (continued)
Output Disable Leakage Current I_leak – – 1 A OE = Low
Standby Current I_std – – 100 A ST = Low, for all Vdds
VOD Magnitude Change VOD – – 50 mV See Figure 2
Offset Voltage VOS 1.125 1.2 1.375 V See Figure 2
VOS Magnitude Change VOS – – 50 mV See Figure 2
Rise/Fall Time Tr, Tf – 495 700 ps 20% to 80%, see Figure 2
OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V
– 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds

Pin Description
Pin Map Functionality
H or Open: specified frequency output
OE Input
L: output is high impedance Top View
1 H or Open: specified frequency output
ST Input L: Device goes to sleep mode. Supply current reduces to OE/ST 1 6 VDD
I_std.
No Connect; Leave it floating or connect to GND for better NC 2 5 OUT-
2 NC NA
heat dissipation
3 GND Power VDD Power Supply Ground
GND 3 4 OUT+
4 OUT+ Output Oscillator output
5 OUT- Output Complementary oscillator output
6 VDD Power Power supply voltage

Absolute Maximum
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge (HBM) – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C

Thermal Consideration
JA, 4 Layer Board JC, Bottom
Package (°C/W) (°C/W)
7050, 6-pin 142 27
5032, 6-pin 97 20
3225, 6-pin 109 20

Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C

Rev. 1.06 Page 2 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Waveform Diagrams

OUT-

80% 80%

20% 20% VOH

OUT+

VOL
Tr Tf

GND

Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)

V _ S w in g

0 V
t

Figure 1(b). LVPECL Voltage Levels Across Differential Pair

OUT-

80% 80%

VOD

20% 20%

OUT+
VOS

Tr Tf

GND

Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)

Rev. 1.06 Page 3 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Termination Diagrams
LVPECL:

VDD

OUT+ Z 0 = 50  D+

L V P E C L D rive r Receiver Device

OUT- Z0 = 5 0  D-

50  50 

V T T = V D D – 2.0 V

Figure 3. LVPECL Typical Termination

VDD VDD= 3.3V => R1 = 100 to 150 

VDD= 2.5V => R1 = 75 
100 nF
OUT+ Z0 = 50  D+

LVPECL Driver Receiver Device

100 nF
OUT- Z0 = 50  D-

R1 R1
50  50 

VTT
Figure 4. LVPECL AC Coupled Termination

VDD = 3.3V => R1 = R3 = 133  and

R2 = R4 = 82 
VDD
VDD = 2.5V => R1 = R3 = 250  and
R2 = R4 = 62.5 

VDD R1 R3

OUT+ Z0 = 50  D+

LVPECL Driver Receiver Device

OUT- Z0 = 50  D-

R2 R4

Figure 5. LVPECL with Thevenin Typical Termination

Rev. 1.06 Page 4 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

LVDS:

VDD

OUT+ Z0 = 50  D+

LVDS Driver 100  Receiver Device

OUT- Z0 = 50  D-

Figure 6. LVDS Single Termination (Load Terminated)

Rev. 1.06 Page 5 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Dimensions and Patterns

Package Size – Dimensions (Unit: mm)[1] Recommended Land Pattern (Unit: mm)[2]
3.2 x 2.5x 0.75 mm

3.2±0.05 2.20 2 .2 5
#6 #5 #4 #4 #5 #6
2.5±0.05

0.9
YXXXX

1.6
0.7

1.00
#1 #2 #3 #3 #2 #1
0.6

0.75±0.05 0 .6 5 1 .0 5

5.0 x 3.2 x 0.75 mm

#6 #5 #4 #4 #5 #6
1.20

YXXXX

#1 #2 #3 #3 #2 #1

0.75±0.05

7.0 x 5.0x 0.90 mm

7.0±0.10 5.08
5.08
#6 #5 #4 #4 #5 #6
5.0±0.10

2.60

1.10

YXXXX
3.80

#1 #2 #3 #3 #2 #1
1.60

1.40
0.90 ±0.10

1.60

Notes:
1. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
2. A capacitor of value 0.1 F between Vdd and GND is recommended.

Rev. 1.06 Page 6 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Ordering Information

SiT9121AC -1C2-33E125.000000T
Packaging:
Part Family “T”, “Y”, “X”, “D”, “E” or “G”
Refer to table below for packing
“SiT9121” method
Leave Blank for Bulk

Revision Letter Frequency

“A” is the revision of Silicon
1.000000 MHz to 220.000000 MHz

Temperature Range Feature Pin

“I” Industrial, -40 to 85°C “E” for Output Enable
“C” Extended Commercial, -20 to 70°C “S” for Standby

Voltage Supply
Signalling Type “18” for 1.8V ±5% (only LVDS)
“1” = LVPECL “25” for 2.5V ±10%
“2” = LVDS “33” for 3.3V ±10%
“XX” for 2.25V to 3.63V

Package Size Frequency Stability

“B” 3.2 x 2.5 mm x mm “F” for ±10 ppm
“C” 5.0 x 3.2 mm x mm “1” for ±20 ppm
“D” 7.0 x 5.0 mm x mm
“2” for ±25 ppm
“3” for ±50 ppm

Ordering Codes for Supported Tape & Reel Packing Method

8 mm T&R 8 mm T&R 8 mm T&R 12 mm T&R 12 mm T&R 12 mm T&R 16 mm T&R 16 mm T&R 16 mm T&R
Device Size (3ku) (1ku) (250u) (3ku) (1ku) (250u) (3ku) (1ku) (250u)
7.0 x 5.0 mm – – – – – – T Y X
5.0 x 3.2 mm – – – T Y X – – –
3.2 x 2.5 mm D E G T Y X – – –

Frequencies Not Supported

Range 1: From 209.000001 MHz to 210.999999 MHz

Rev. 1.06 Page 7 of 8 [Link]

SiT9121
1-220 MHz High Performance Differential Oscillator
The Smart Timing Choice
The Smart Timing Choice

Revision History
Version Release Date Change Summary
1.01 2/20/13 Original
1.02 12/3/13 Added input specifications, LVPECL/LVDS waveforms, packaging T&R options
1.03 2/6/14 Added 8mm T&R option and ±10 ppm
1.04 4/8/14 Included 1.8V option for LVDS output only
1.05 7/30/14 Included Thermal Consideration table
1.06 10/20/14 Modified Thermal Consideration values. Preliminary removed from the title

© SiTime Corporation 2014. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.

Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.

CRITICAL USE EXCLUSION POLICY

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.

Rev. 1.06 Page 8 of 8 [Link]

 The Smart Timing Choice
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Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 [Link]
 The Smart Timing Choice
The Smart Timing Choice

Silicon MEMS Outperforms Quartz

SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 [Link]
Silicon MEMS Outperforms Quartz Rev. 1.1 Revised October 5, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice

Best Reliability Best Electro Magnetic Susceptibility (EMS)

Silicon is inherently more reliable than quartz. Unlike quartz SiTime’s oscillators in plastic packages are up to 54 times
suppliers, SiTime has in-house MEMS and analog CMOS more immune to external electromagnetic fields than quartz
expertise, which allows SiTime to develop the most reliable oscillators as shown in Figure 3.
products. Figure 1 shows a comparison with quartz
technology. Why is SiTime Best in Class:
• Internal differential architecture for best common mode
Why is SiTime Best in Class: noise rejection
• SiTime’s MEMS resonators are vacuum sealed using an • Electrostatically driven MEMS resonator is more immune
advanced EpiSeal™ process, which eliminates foreign par- to EMS
ticles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise

SiTime vs Quartz
Mean Time Between Failure (Million Hours)
Electro Magnetic Susceptibility (EMS)
- 30

500 - 39 - 40
SiTime - 40 - 42 - 43
- 45

Average Spurs (dB)

IDT (Fox) 38 - 50
SiTime
20X Better SiTime
Epson 28 - 60
54X Better

- 70 - 73
TXC 16
- 80
Pericom 14
- 90
0 200 400 600 Kyocera Epson TXC CW SiLabs SiTime

Figure 1. Reliability Comparison[1] Figure 3. Electro Magnetic Susceptibility (EMS)[3]

Best Aging Best Power Supply Noise Rejection

Unlike quartz, MEMS oscillators have excellent long term SiTime’s MEMS oscillators are more resilient against noise on
aging performance which is why every new SiTime product the power supply. A comparison is shown in Figure 4.
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
• SiTime’s MEMS resonators are vacuum sealed using an common mode noise rejection
advanced EpiSeal process, which eliminates foreign parti- • Best analog CMOS design expertise
cles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator

Power Supply Noise Rejection

Additive Integrated Phase Jitter per mVp-p

SiTime MEMS vs. Quartz Aging

SiTIme NDK Epson Kyocera
SiTime MEMS Oscillator Quartz Oscillator 5.0
10
Injected Noise (ps/mv)

8.0 4.0
8
SiTime
Aging (±PPM)

3.0
6 2X Better

2.0
4 3.5
3.0 SiTime
SiTime
1.0 3X Better
2 1.5
0.0
0 10 100 1,000 10,000
1-Year 10-Year Power Supply Noise Frequency (kHz)

Figure 2. Aging Comparison[2] Figure 4. Power Supply Noise Rejection[4]

Silicon MEMS Outperforms Quartz Rev. 1.1 [Link]

Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice

Best Vibration Robustness Best Shock Robustness

High-vibration environments are all around us. All electronics, SiTime’s oscillators can withstand at least 50,000 g shock.
from handheld devices to enterprise servers and storage They all maintain their electrical performance in operation
systems are subject to vibration. Figure 5 shows a comparison during shock events. A comparison with quartz devices is
of vibration robustness. shown in Figure 6.

Why is SiTime Best in Class: Why is SiTime Best in Class:

• The moving mass of SiTime’s MEMS resonators is up to • The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz 3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust • Center-anchored MEMS resonator is the most robust
design design

Vibration Sensitivity vs. Frequency Differential XO Shock Robustness - 500 g

16
SiTime TXC Epson Connor Winfield Kyocera SiLabs

Peak Frequency Deviation (PPM)

14.3
100.00 14
Vibration Sensitivity (ppb/g)

12.6
12

10.00 10

8
SiTime
6 Up to 25x
1.00 SiTime Better
Up to 30x 3.9
4 2.9
Better 2.5
2
0.6
0.10
10 100 1000 0
Vibration Frequency (Hz) Kyocera Epson TXC CW SiLabs SiTime

Figure 5. Vibration Robustness[5] Figure 6. Shock Robustness[6]

Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@[Link].

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If “Other,” please specify:

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If “Yes”, please specify (what and where):

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5. Do you have additional recommendations for this document?

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SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form
below to productsupport@[Link].

1. Does the Electrical Characteristics table provide complete information? Yes No

If No, what parameters are missing?

_________________________________________________________________________________________________

2. Is the organization of this document easy to follow? Yes No

If “No,” please suggest improvements that we can make:

_________________________________________________________________________________________________

3. Is there any application specific information that you would like to see in this document? (Check all that apply)

EMI Termination recommendations Shock and vibration performance Other

If “Other,” please specify:

_________________________________________________________________________________________________

4. Are there any errors in this document? Yes No

If “Yes”, please specify (what and where):

_________________________________________________________________________________________________

5. Do you have additional recommendations for this document?

_________________________________________________________________________________________________

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