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Sensor

The document describes the OPB703 to OPB705 reflective object sensors, which feature phototransistor outputs, high sensitivity, and low-cost plastic housing. These sensors are designed for various applications including assembly line automation and machine safety, and are available with different lens options for enhanced performance. Technical specifications, electrical characteristics, and ordering information are provided for multiple sensor variants.

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Riasat Shah
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© All Rights Reserved
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0% found this document useful (0 votes)
5 views12 pages

Sensor

The document describes the OPB703 to OPB705 reflective object sensors, which feature phototransistor outputs, high sensitivity, and low-cost plastic housing. These sensors are designed for various applications including assembly line automation and machine safety, and are available with different lens options for enhanced performance. Technical specifications, electrical characteristics, and ordering information are provided for multiple sensor variants.

Uploaded by

Riasat Shah
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Reflective Object Sensor

OPB703 through OPB705, OPB&03WZ


through OPB705WZ, OPB701Wz through
OPB70HWZ
Features:
• Phototransistor output
• High sensitivity WZ
• Low-cost plastic housing Version
• Available with lenses for dust protection and ambient light filtration
• Focused for maximum sensitivity

Description:
The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emi ng Diode (LED) and a NPN silicon Phototransistor,
mounted side-by-side on converging op cal axes in a black plas c housing and are designed for PCBoard moun ng. The
OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote moun ng u lizing interconnect wires of UL
approved 26 AWG, 24” (61.0cm) minimum length, stripped and nned.
The OPB70AWZ consists of an Infrared (890nm) Light Emi ng Diode (LED) and a NPN silicon Photodarlington, mounted side-by-
side on converging op cal axes in a black plas c housing and is designed for remote moun ng u lizing interconnect wires of UL
approved 26 AWG, 24” (61.0cm) minimum length, stripped and nned.
The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emi ng Diode (LED) and a NPN silicon Phototransistor
or Rbe Phototransistor, mounted side-by-side on converging op cal axes in a black plas c housing and are designed for remote
moun ng u lizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and nned.
Various lens op ons are available: No lens for the (OPB703, OPB703WZ), blue window for dust protec on for the (OPB704,
OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolu on for the (OPB705, OPB705WZ, OPB70AWZ,
OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protec on for dirty environments.
The phototransistor responds to illumina on from the emi er when a reflec ve object passes within the field of view centered
typically at 0.15” (3.8 mm).
Custom electrical, wire, cabling and Ordering InformaƟon
connectors are available. Contact Part LED Peak Detector OpƟcal Cover Lead or Wire
your local representa ve or OPTEK
OPB703 0.160" Leads
for more informa on. None
OPB703WZ 24" / 26 AWG Wire

Applications: OPB704 0.160" Leads


• Non-contact reflective object OPB704WZ 24" / 26 AWG Wire
sensor OPB70HWZ Transistor
Blue
24” / 26 AWG Wire
• Assembly line automation Window
• Machine automation OPB704G 890 nm 0.160" Leads
• Machine safety OPB704GWZ 24" / 26 AWG Wire
• End of travel sensor
OPB705 0.160" Leads
• Door sensor
• Mark Detection OPB705WZ Aperture
• Office Equipment OPB70AWZ Darlington
OPB70BWZ Rbe Transistor Blue Window
OPB70CWZ Rbe Transistor 24" / 26 AWG Wire
Aperture
OPB70DWZ Transistor
640 nm
OPB70EWZ Rbe Transistor
Clear Window
RoHS OPB70FWZ Transistor

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 1


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

OPB703, OPB704, OPB705

OP- B703, OP-


1 4

2 3

OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ

An- Collector
Anode Collector Anode Collector

Cath- Cathode Emitter


Cathode Emitter Emitter

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 2


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

OPB704G

OPB704GWZ

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 3


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

Absolute Maximum RaƟngs (TA=25°C unless otherwise noted)


Storage Temperature Range -40°C to +80° C
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C(1)
Input Diode
Forward DC Current 40 mA
Reverse DC Voltage 2V
Power Dissipa on 100 mW(2)
Output Photodetector
Collector-Emi er Voltage
Phototransistor 30 V
Photodarlington 15 V
Emi er-Collector Voltage 5V
Collector DC Current 25 mA
Power Dissipa on 100 mW(2)

Notes:
(1) RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 4


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

Electrical CharacterisƟcs (TA = 25° C unless otherwise noted)


(OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS


Input Diode (See OP265 for addi onal informa on — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for addi onal informa on — for reference only)
V(BR)CEO Collector-Emi er Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emi er-Collector Breakdown Voltage 5 - - V IEC = 100µA
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled
On-State Collector Current
OPB70HWZ 0.60 - 3.5
IC(ON) OPB703, OPB703WZ 0.30 - 2.5 VCE = 5 V, IF = 40mA , d = 0.15” (4)(6)
OPB704, OPB704WZ 0.20 - 2.5 mA

OPB704G, OPB704GWZ 0.50 - 6.0 VCE = 5 V, IF = 40mA , d = 0.20” (4)(6)

Crosstalk
ICX OPB703, OPB703WZ - - 20
µA VCE = 5 V, IF = 40mA(5)
OPB704, OPB704WZ, OPB70HWZ - - 20

Notes:
(1) RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.
(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ,
and OPB70FWZ derate linearly 1.82 mW/° C above 25° C.
(4) The distance from the assembly face to the reflec ve surface is d.
(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference: Eastman Kodak, Cata-
log # E 152 7795.
(7) All parameters tested using pulse techniques.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 5


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

Electrical CharacterisƟcs (TA = 25° C unless otherwise noted)


(OPB70AWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for addi onal informa on — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output PhotoDarlington (See OP535 for addi onal informa on — for reference only)
V(BR)CEO Collector-Emi er Breakdown Voltage 15 - - V ICE = 1.0 mA, EE =0
V(BR)ECO Emi er-Collector Breakdown Voltage 5 - - V IEC = 100µA, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled

IC(ON) On-State Collector Current 5.0 - 26.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)

V(SAT) Satura on Voltage - - 1.15 V IC = 400 µA, IF = 40mA , d = 0.15” (1)(3)

ICX Crosstalk - - 25 µA VCE = 5 V, IF = 40mA(2)

Notes:
(1) The distance from the assembly face to the reflec ve surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference: Eastman Kodak,
Catalog # E 152 7795.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 6


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ
Electrical CharacterisƟcs (TA = 25° C unless otherwise noted)
(OPB70BWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for addi onal informa on — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP705 for addi onal informa on — for reference only)
V(BR)CEO Collector-Emi er Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emi er-Collector Breakdown Voltage 0.4 - - V IEC = 100µA
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0
Coupled
On-State Collector Current
IC(ON) 0.50 - 3.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)
OPB70BWZ
Crosstalk
ICX - - 5 µA VCE = 5 V, IF = 40mA(2)
OPB70BWZ
Notes:
(1) The distance from the assembly face to the reflec ve surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference: Eastman Kodak, Cata-
log # E 152 7795.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 7


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

Electrical CharacterisƟcs (TA = 25° C unless otherwise noted)


(OPB70CWZ and OPB70EWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS


Input Diode (See OVLAS6CB8 for addi onal informa on — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for addi onal informa on — for reference only)
V(BR)CEO Collector-Emi er Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emi er-Collector Breakdown Voltage 0.4 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0

Coupled

On-State Collector Cur- OPB70CWZ .10 - 1.0


IC(ON) mA VCE = 5 V, IF = 40mA , d = 0.15” (21(3)
rent OPB70EWZ .25 - 2.5

V(SAT) Satura on Voltage - - 0.4 V IC = 100 µA, IF = 40mA , d = 0.15” (1)(3)

ICX Crosstalk - - 2 µA VCE = 5 V, IF = 40mA(2)

Notes:
(1) The distance from the assembly face to the reflec ve surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference: Eastman Kodak,
Catalog # E 152 7795.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 8


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

Electrical CharacterisƟcs (TA = 25° C unless otherwise noted)


(OPB70DWZ and OPB70FWZ)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS


Input Diode (See OVLAS6CB8 for addi onal informa on — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for addi onal informa on — for reference only)
V(BR)CEO Collector-Emi er Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emi er-Collector Breakdown Voltage 5.0 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0

Coupled

On-State Collector Cur- OPB70DWZ .10 - 1.5


IC(ON) mA VCE = 5 V, IF = 40mA , d = 0.15” (1)(3)
rent OPB70FWZ .25 - 3.5

V(SAT) Satura on Voltage - - 0.4 V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (1)(3)

ICX Crosstalk - - 5.0 µA VCE = 5 V, IF = 40mA(2)

Notes:
(1) The distance from the assembly face to the reflec ve surface is d.
(2) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference: Eastman Kodak,
Catalog # E 152 7795.

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 9


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

OPB703 - Output vs Distance OPB704 - Output vs Distance


1.8 1.8
Normalized at IF = 40 mA Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90% Distance = 0.15" & Kodak 90%
1.6 1.6

1.4 1.4
Kodak 90% Kodak 90%
Kodak 19% Kodak 19%
1.2 Avery 1.2 Copier Paper

Normalized Output
Normalized Output

Corporate Avery Label


Retro Reflective Retro Reflective
1.0 1.0

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0.0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (inches) Distance (inches)

OPB705 - Output vs Distance Forward Voltage vs Forward Current vs Temp


1.6
1.8
Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90% Normalized Forward Current at 20 mA and 20° C
1.6

1.4
1.4
Kodak 90%
Kodak 19%
Typical Forward Voltage

1.2 Copier Paper


Normalized Output

Avery Labels 1.2


Retro Reflective
1.0

0.8
1.0

0.6 -40° C
-20° C
0° C
0.4
0.8 20° C
40° C
0.2 60° C
80° C

0.0 0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40
Distance (inches) Forward Current (mA)

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 10


Reflective Object Sensor
OPB703 through OPB705, OPB&03WZ
through OPB705WZ, OPB701Wz through
OPB70HWZ

General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
[Link] | [Link]
considered accurate at time of going to print.

© TT electronics plc Issue F 06/2016 Page 11


Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

TT Electronics:
OPB703WZ OPB705WZ OPB704 OPB703 OPB70EWZ OPB70HWZ OPB70BWZ OPB70CWZ OPB70DWZ
OPB70FWZ OPB704G OPB704GWZ

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