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Data Sheet

The document provides specifications for a PNP silicon transistor (H9012) manufactured by Shantou Huashan Electronic Devices Co., Ltd., designed for use as a 1W output amplifier in portable radios. It includes absolute maximum ratings, electrical characteristics, and hFE classification details. Key parameters include a collector current of -500mA and various voltage ratings for collector-base, collector-emitter, and emitter-base configurations.

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4 views2 pages

Data Sheet

The document provides specifications for a PNP silicon transistor (H9012) manufactured by Shantou Huashan Electronic Devices Co., Ltd., designed for use as a 1W output amplifier in portable radios. It includes absolute maximum ratings, electrical characteristics, and hFE classification details. Key parameters include a collector current of -500mA and various voltage ratings for collector-base, collector-emitter, and emitter-base configurations.

Uploaded by

abidou2011
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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P N P S I L I C O N T RAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.


H9012
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………625mW
1―Emitter，E
VCBO——Collector-Base Voltage………………………………-40V 2―Base，B
3―Collector，C
VCEO——Collector-Emitter Voltage……………………………-20V

V EBO ——Emitter-Base Voltage………………………………-5V

I C ——Collector Current……………………………………-500mA

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO Collector Cut-off Current -100 nA VCB=-25V, IE=0
IEBO Emitter Cut-off Current -100 nA VEB=-3V, IC=0
HFE(1) DC Current Gain 78 246 VCE=-1V, IC=-50mA
HFE(2) 40 VCE=-1V, IC=-500mA
VCE(sat) Collector- Emitter Saturation Voltage -600 mV IC=-500mA, IB=-50mA
VBE(sat) Base-Emitter Saturation Voltage -1.2 V IC=-500mA, IB=-50mA
VBE(ON) Base-Emitter On Voltage -600 -730 mV VCE=-1V, IC=-10mA
BVCBO Collector-Base Breakdown Voltage -40 V IC=-100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage -20 V IC=-1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage -5 V IE=-100μA，IC=0

█ hFE Classification

E F G H I

78—112 96—135 112—166 144—202 176—246


P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H9012

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