Spec. No.

: C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 1/9

P-Channel Enhancement Mode Power MOSFET

MTP4435AQ8 BVDSS
ID@ VGS=-10V, TA=25°C
-30V
-12.3A
RDSON @VGS=-10V, ID=-8A 12.3mΩ(typ.)
RDSON @VGS=-4.5V, ID=-5A 17.5mΩ(typ.)

Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package

Equivalent Circuit Outline

MTP4435AQ8 SOP-8

G：Gate
S：Source
D：Drain

Ordering Information
Device Package Shipping
SOP-8
MTP4435AQ8-0-T3-G 2500 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 2/9

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±25
Continuous Drain Current @ TA=25°C, VGS=-10V -12.3
ID
Continuous Drain Current @ TA=70°C, VGS=-10V -9.8
A
Pulsed Drain Current IDM -50 *1
Avalanche Current IAS -12.3
Avalanche Energy @ L=1mH, ID=-12.3A, VDD=-15V EAS 75.6
mJ
Repetitive Avalanche Energy @ L=0.05mH EAR 2.5 *2
TA=25℃ 3.1 *3
Total Power Dissipation PD W
TA=70℃ 2 *3
Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C

Thermal Data
Parameter Symbol Value Unit
Thermal Resistance, Junction-to-case, max Rth,j-c 20
°C/W
Thermal Resistance, Junction-to-ambient, max Rth,j-a 40 *3
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions
Static
BVDSS -30 - - VGS=0V, ID=-250μA
V
VGS(th) -1 - -2.5 VDS=VGS, ID=-250μA
IGSS - - ±100 nA VGS=±25V, VDS=0V
IDSS - - -1 VDS=-24V, VGS=0V
μA
IDSS - - -10 VDS=-24V, VGS=0V, Tj=125°C
- 12.3 16 VGS=-10V, ID=-8A
RDS(ON) *1 mΩ
- 17.5 23 VGS=-4.5V, ID=-5A
GFS *1 - 19.7 - S VDS=-5V, ID=-10A
Dynamic
Ciss - 1552 -
Coss - 188 - pF VDS=-15V, VGS=0, f=1MHz
Crss - 170 -

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 3/9

Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions
td(ON) *1, 2 - 10.2 -
tr *1, 2 - 18.6 - VDD=-15V, ID=-1A,
ns
td(OFF) *1, 2 - 69.8 - VGS=-10V, RG=2.7Ω
tf *1, 2 - 17.2 -
Qg (VGS=10V) *1, 2 - 32.9 -
Qg (VGS=4.5V) *1, 2 - 16.3 -
nC VDS=-15V, ID=-10A, VGS=-10V
Qgs *1, 2 - 5.1 -
Qgd *1, 2 - 7.1 -
Rg - 6.6 - Ω f=1MHz
Source-Drain Diode
IS *1 - - -3
A
ISM *3 - - -12
VSD *1 - -0.78 -1.2 V IS=-3A, VGS=0V
trr - 12.3 - ns
IF=-3A, dIF/dt=100A/μs
Qrr - 6.3 - nC
Note : *[Link] Test : Pulse Width ≤300μs, Duty Cycle≤2%
*[Link] of operating temperature
*[Link] width limited by maximum junction temperature.

Recommended Soldering Footprint

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 4/9

Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50 1.4
-10V, -9V, -8V, -7V,-6V, -5V

-BVDSS, Normalized Drain-Source

40 1.2

Breakdown Voltage
-I D, Drain Current (A)

-4V

30 1

20 -3.5V 0.8

10 -3V 0.6 ID=-250μA,

VGS=0V
VGS=-2.5V
0 0.4
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150 175
-VDS, Drain-Source Voltage(V) Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current Source Drain Current vs Source-Drain Voltage
1000 1.2
R DS(on) , Static Drain-Source On-State

VGS=0V
-VSD, Source-Drain Voltage(V)

VGS=-4V
1 Tj=25°C
-4.5V
-5V
Resistance(mΩ)

100
-10V 0.8

0.6
10 Tj=150°C
0.4

1 0.2
0.01 0.1 1 10 0 4 8 12 16 20
-ID, Drain Current(A) -IS, Source Drain Current(A)

Static Drain-Source On-State Resistance vs Gate-Source Drain-Source On-State Resistance vs Junction Tempearture
Voltage
200 2
R DS(on) , Normalized Static Drain-Source

VGS=-10V, ID=-8A
180 1.8
R DS(on) , Static Drain-Source On-

160 ID=-8A
State Resistance(mΩ)

1.6
On-State Resistance

140
1.4
120
100 1.2
80 1
60
0.8
40
0.6 RDS(ON) @Tj=25°C : 12.3 mΩ typ.
20
0 0.4
0 2 4 6 8 10 -75 -50 -25 0 25 50 75 100 125 150 175
-VGS, Gate-Source Voltage(V) Tj, Junction Temperature(°C)

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 5/9

Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000 1.4

-VGS(th) , normliz Threshold Voltage

1.2
ID=-1mA
Capacitance---(pF)

Ciss
1

1000
0.8
C oss

0.6 ID=-250μA
Crss

100 0.4
0.1 1 10 100 -75 -50 -25 0 25 50 75 100 125 150 175
-VDS, Drain-Source Voltage(V) Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current Gate Charge Characteristics

100 10
GFS, Forward Transfer Admittance(S)

8
-VGS, Gate-Source Voltage(V)

VDS=-10V
10
VDS=-5V
6
1
4 VDS=-15V
VDS=-5V
0.1 Pulsed
2
TA=25°C
ID=-10A

0.01 0
0.001 0.01 0.1 1 10 100 0 8 16 24 32 40
-ID, Drain Current(A) Qg, Total Gate Charge(nC)

Maximum Safe Operating Area Maximum Drain Current vs Junction Temperature

100 16
100μs
14
-I D, Maximum Drain Current(A)

1ms
10 12
-I D, Drain Current(A)

10ms
10
100ms
1 8
1s 6

0.1 DC 4
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse TA=25°C, VGS=-10V, RθJA=40°C/W
2

0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150 175
-ID, Drain-Source Voltage(V) Tj, Junction Temperature(°C)

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 6/9

Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation Typical Transfer Characteristics
300 50
TJ(MAX) =150°C 45 VDS=5V
250
Peak Transient Power (W)

TA=25°C 40
RθJA=40°C/W

-I D, Drain Current (A)

200 35
30
150 25
20
100
15

50 10
5
0 0
0.0001 0.001 0.01 0.1 1 10 100 1000 0 2 4 6 8
Pulse Width(s) -VGS, Gate-Source Voltage(V)

Transient Thermal Response Curves

1

D=0.5
r(t), Normalized Effective Transient

0.2
1.RθJA(t)=r(t)*RθJA
0.1 0.1
[Link] Factor, D=t1/t2
Thermal Resistance

[Link]-TA=PDM*RθJA(t)
0.05 4.RθJA=40°C/W

0.02
0.01
0.01

Single Pulse

0.001
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t1, Square Wave Pulse Duration(s)

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 8/9

Recommended wave soldering condition

Product Peak Temperature Soldering Time
Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly

Average ramp-up rate
3°C/second max. 3°C/second max.
(Tsmax to Tp)
Preheat
−Temperature Min(TS min) 100°C 150°C
−Temperature Max(TS max) 150°C 200°C
−Time(ts min to ts max) 60-120 seconds 60-180 seconds
Time maintained above:
−Temperature (TL) 183°C 217°C
− Time (tL) 60-150 seconds 60-150 seconds
Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds 20-40 seconds
temperature(tp)
Ramp down rate 6°C/second max. 6°C/second max.
Time 25 °C to peak temperature 6 minutes max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.

MTP4435AQ8 CYStek Product Specification

 Spec. No. : C107Q8
CYStech Electronics Corp. Issued Date : 2015.08.14
Revised Date : 2015.12.15
Page No. : 9/9

SOP-8 Dimension

Marking:

Device Name
4435A
Year Code : Last digit
of Christian year

Month Code : A, B, C,
D, E, F, G, H, J, K, L,
and M represent Jan
thru Dec
Production Lot Serial number:
Rolling from 01 each month

8-Lead SOP-8 Plastic Package

CYStek Package Code: Q8

*: Typical
Inches Millimeters Inches Millimeters
DIM DIM
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.1850 0.2007 4.70 5.10 G 0.0531 0.0689 1.35 1.75
B 0.1496 0.1575 3.80 4.00 H 0.1889 0.2007 4.80 5.10
C 0.2283 0.2441 5.80 6.20 I 0.0019 0.0098 0.05 0.25
D 0.0500* 1.27 * J 0.0157 0.0500 0.40 1.27
E 0.0130 0.0201 0.33 0.51 K 0.0067 0.0098 0.17 0.25
F 0.1472 0.1527 3.74 3.88 L 0.0531 0.0610 1.35 1.55
Notes: [Link] dimension: millimeters.
[Link] lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
[Link] there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTP4435AQ8 CYStek Product Specification