LEVEL 1: REMEMBER (1–2 Marks Questions) (Recall facts, definitions)
1. Define semiconductor. What is band gap?
2. Differentiate between conductor, semiconductor, and insulator.
3. Define intrinsic semiconductor. What is doping?
4. Name two elemental semiconductors. What are compound semiconductors? Give one example.
5. Define Fermi level.
6. What is density of states?
7. Define drift current.
8. What is diffusion current?
9. What is Hall Effect?
1. Explain why semiconductors have a negative temperature coefficient.
2. Describe band formation in solids.
3. Explain intrinsic semiconductor behavior at T = 0 K and T > 0 K.
4. Explain Fermi-Dirac distribution function.
5. Differentiate between n-type and p-type semiconductors.
6. Explain the concept of carrier concentration.
7. Why is silicon preferred over germanium?
8. Explain drift and diffusion mechanisms.
9. Explain how doping changes conductivity.
10. Explain the role of impurities in semiconductors.
1. Calculate conductivity of a semiconductor given: n = 10¹⁶ cm⁻³, μ = 1350 cm²/Vs, p = 10¹⁴ cm⁻³,
μ = 480 cm²/Vs.
2. Find resistivity if conductivity is 5 (Ω·m)⁻¹.
3. Calculate intrinsic carrier concentration at room temperature (conceptual-based).
4. Determine drift current density for given electric field and mobility.
5. Calculate electron concentration using: n=N c e − kT E C −E F .
6. Find Fermi level position for an n-type semiconductor (conceptual calculation).
7. Calculate Hall coefficient given carrier concentration.
1. Analyze variation of Fermi level with temperature in intrinsic semiconductor.
2. Compare intrinsic vs extrinsic semiconductors based on carrier concentration.
3. Analyze carrier transport mechanisms in semiconductors.
4. Explain energy band diagram for n-type semiconductor.
5. Analyze effect of doping concentration on conductivity.
6. Explain temperature regions (freeze-out, extrinsic, intrinsic).
1. Evaluate why intrinsic semiconductors are not useful in devices.
2. Justify the importance of compound semiconductors in optoelectronics.
3. Compare drift vs diffusion current and justify their importance.
4. Evaluate the significance of Hall Effect in semiconductor characterization.
5. Compare silicon and GaAs for high-speed devices.
1. Design a semiconductor-based device using intrinsic and extrinsic materials.
2. Develop a detailed explanation of carrier transport including drift and diffusion.
3. Create a diagram explaining band theory and classification of solids.
4. Propose a method to determine carrier concentration experimentally using Hall Effect.
5. Design a temperature-dependent conductivity experiment for semiconductors.
1. Calculate the Hall coefficient for a semiconductor having carrier concentration n=8×10 21 m −3 .
2. Find the carrier concentration if the Hall coefficient is R H =5×10 −4 m 3 /C.
3. Determine the Hall coefficient for a material with n=2×10 22 m −3 .
4. A semiconductor has Hall coefficient 2.5×10 −4 m 3 /C. Find the carrier concentration.
5. A sample carries current I=3A in a magnetic field B=0.4T. If thickness t=1mm and carrier
concentration n=5×10 22 m −3 , calculate Hall voltage.
6. Find Hall voltage when: I=2A, B=0.3T, n=1×10 22 m −3 , t=0.5mm
7. A semiconductor has conductivity σ=150(Ωm) −1 and Hall coefficient R H =4×10 −4 m 3 /C. Find
mobility.
8. Find Hall coefficient if mobility is 0.02m 2 /Vs and conductivity is 100(Ωm) −1 .
9. A sample produces Hall voltage of 3mV when: I=5A, B=0.2T, thickness t=0.4mm Find carrier
concentration.
10. If Hall coefficient is negative and equal to −6×10 −4 m 3 /C, find: (a) Type of semiconductor (b)
Carrier concentration
11. A semiconductor slab has: V H =1.5mV, I=4A, B=0.25T, t=0.6mm Find carrier concentration.
12. Calculate Hall voltage if: R H =3×10 −4 m 3 /C Current density J=10 5 A/m 2 Magnetic field
B=0.5T