Notes Module 1
Notes Module 1
Signal Modelling
David Johns
University of Toronto
[Link]@[Link]
Small Signal Analysis
Large Signal Analysis
− Uses non-linear large signal equations to find DC operating point
Small Signal Analysis
− Linearize the non-linear behavior and look at variations in the
voltage/current values from their bias values
One transistor amp
5V
1V
IR
1mA
n2 0V
3V
n1
1V
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Small Signal Analysis
DC bias voltage (no signal on Mic)
VDC,n1 [V] IDC,R [mA]
3 3
1 1
t [s] t [s]
VDC,n2 [V]
3
1
t [s]
With a sinusoidal signal on Mic
Vn1 [V] IR [mA]
3 3
1 1
t [s] t [s]
Vn2 [V]
3
1
t [s]
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Small Signal Analysis
Small signal voltage
vn1 [V] iR [mA]
1 1
−1 t [s] −1 t [s]
vn2 [V]
1
t [s]
−1
vn1 = Vn1 − VDC,n1
In general: v = V − VDC
The small-signal voltage is the difference between the actual
signal, V , and the dc bias voltage, VDC
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Small Signal Analysis
Independent voltage/current sources do not change their values
due to input signal
− Except for the independent input signal ...
− All independent sources are set to zero
To find small signal models
− Find derivatives dID /dVGS and dID /dVDS at the DC operating point
for each transistor
− In other words, linearize the large signal models in each of the
regions of operation.
∂ID
gm ≡ (1)
∂VGS
∂ID −1
rds ≡ (2)
∂VDS
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Models vs ID Plots
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Model: Cutoff Region
Since ID = 0 ...
G D
G vgs
VGS
S S
NMOS - cutoff small-signal model - cutoff
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Model: Triode Region
G D
G vgs rds
VGS
S S
NMOS - triode small-signal model - triode
2 ′
ID = 0.5µn Cox (W /L)Vov (1 + λn VDS )
D
G D
G vgs gm vgs ro
VGS
S S
NMOS - active small-signal model - active
′ ) term
For gm , ignore the small (1 + λn VDS
3 different (but equivalent) ways of finding gm .
Gives insight when designing for a value of gm .
For example, if a designer keeps Vov constant (which is a
common practice), then gm is proportional to ID
Active region is where the transistor is most commonly used in an
analog circuit
− Results in gain in the circuit
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Model: Active Region
Alternative model
D
D
is
G ro
G
is rs
VGS
rs = 1/gm
S
S
NMOS - active small-signal T-model - active
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λ is a Function of Channel Length
λ is given for a transistor with a given channel length
However, λ is inversely proportional to channel length
Define new parameter, λ′ , where λ′ ≡ λL
− Units of λ′ are [m/V]
λ′
λ= (6)
L
L
ro = (7)
λ ′ ID
ro → ∞ as L increases
− A large ro makes the transistor more ideal in terms of output
impedance
− However, a longer channel length generally results in lower speed
and higher power dissipation
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Example 1
Find the small signal gain vo /vi for the circuit shown below.
Vtn = 0.3V
VDD = 2V µn Cox = 240µA/V2
W = 4µm
L = 200nm
RD λ′n = 50nm/V
1kΩ
vi vo
VG M1
0.6V
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Example 1
First we find the dc operating point...
Set the small-signal, vi = 0
− since nothing is changing while we
VDD find the dc operating point
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Example 1 - Small Signal Circuit
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Example 2
Find the small signal gain vo /vi , Rin , Rout for the circuit shown
below.
Vtn = 0.3V
VDD = 2V µn Cox = 240µA/V2
W = 10µm
L = 200nm
RS λ′n = 50nm/V
M1 C (large value)
vi 1kΩ Rin vo
Rout RL
500µA
1kΩ
VSS = −2V
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Example 2
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Example 2
Rin
vg = Rin +RS vi
Rin → ∞ since gate current is zero
Small signal circuit
vg = vi
RS
vg is Resistor divider between vg and vo
ro
Rin rs
vi
is vo = (R R||rL ||ro
o )+rs
vg
L
vo
rs = 1/gm Rout RL ||ro
RL vo /vi = = 0.7549V/V
(RL ||ro )+rs
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Example 3
Find the small signal gain vo /vi for the circuit shown below.
VDD = 2V
Vtp = −0.3V
I1 µp Cox = 120µA/V2
∞ W = 10µm
500µA
L = 200nm
R2 λ′p = 0m/V
1kΩ
RS ∞
M1 ∞
vi 1kΩ vo
Rin RG RD Rout RL
10kΩ 3kΩ 10kΩ
VSS = −2V
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Example 3
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Example 3
R2
RS
Rin
M1 vg = Rin +RS vi
vi Rin vo
RG RDRout RL
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Example 3
Small signal circuit with T-model for M1
R2
RS is rs
vg
is
vi
Rin RG vo
Rout
RD RL
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Example 3
For Rout , set vi = 0 which results in is = 0 so ...
Rout = RD = 3kΩ
For vo /vi , first find vg /vi which is
vg /vi = RG /(RG + RS ) = 0.9091V/V
Now find, vo /vg ...
vo = −is (RD ||RL )
is = vg /(rs + RS )
vo /vg = −(RD ||RL )/(rs + RS ) = −1.639V/V
Combining with vg /vi ...
vo vo vg
= = −1.49V/V
vi vg vi
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Topics Covered
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