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Notes Module 1

The document provides an overview of small signal modeling for MOSFETs, detailing the differences between small signal and large signal analysis. It discusses the small signal parameters, including transconductance (gm) and output resistance (ro), in various operational regions (cutoff, triode, and active). Additionally, it includes examples demonstrating the calculation of small signal gain and other parameters in specific circuits.

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0% found this document useful (0 votes)
4 views26 pages

Notes Module 1

The document provides an overview of small signal modeling for MOSFETs, detailing the differences between small signal and large signal analysis. It discusses the small signal parameters, including transconductance (gm) and output resistance (ro), in various operational regions (cutoff, triode, and active). Additionally, it includes examples demonstrating the calculation of small signal gain and other parameters in specific circuits.

Uploaded by

voxono5581
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Mosfet Small

Signal Modelling

David Johns

University of Toronto
[Link]@[Link]
Small Signal Analysis
Large Signal Analysis
− Uses non-linear large signal equations to find DC operating point
Small Signal Analysis
− Linearize the non-linear behavior and look at variations in the
voltage/current values from their bias values
One transistor amp
5V
1V
IR
1mA
n2 0V
3V
n1
1V

2/26
Small Signal Analysis
DC bias voltage (no signal on Mic)
VDC,n1 [V] IDC,R [mA]
3 3
1 1
t [s] t [s]
VDC,n2 [V]
3
1
t [s]
With a sinusoidal signal on Mic
Vn1 [V] IR [mA]
3 3
1 1
t [s] t [s]
Vn2 [V]
3
1
t [s]
3/26
Small Signal Analysis
Small signal voltage
vn1 [V] iR [mA]
1 1

−1 t [s] −1 t [s]
vn2 [V]
1
t [s]
−1
vn1 = Vn1 − VDC,n1
In general: v = V − VDC
The small-signal voltage is the difference between the actual
signal, V , and the dc bias voltage, VDC

4/26
Small Signal Analysis
Independent voltage/current sources do not change their values
due to input signal
− Except for the independent input signal ...
− All independent sources are set to zero
To find small signal models
− Find derivatives dID /dVGS and dID /dVDS at the DC operating point
for each transistor
− In other words, linearize the large signal models in each of the
regions of operation.
∂ID
gm ≡ (1)
∂VGS
∂ID −1
 
rds ≡ (2)
∂VDS

5/26
Models vs ID Plots

Cutoff: ID = 0 so all derivatives = 0


Triode: rds in triode region
Active: ro and gm in active region
(ro is rds in active region)

6/26
Model: Cutoff Region

Since ID = 0 ...

G D
G vgs
VGS

S S
NMOS - cutoff small-signal model - cutoff

Open circuit at all nodes

7/26
Model: Triode Region

ID = µn Cox (W /L)(Vov − 0.5VDS )VDS


D

G D
G vgs rds
VGS

S S
NMOS - triode small-signal model - triode

Looks like a resistor between Drain/Source for small VDS


rds = (µn Cox (W /L)Vov )−1 (3)

Becomes more accurate for small VDS


8/26
Model: Active Region

2 ′
ID = 0.5µn Cox (W /L)Vov (1 + λn VDS )
D

G D
G vgs gm vgs ro
VGS
S S
NMOS - active small-signal model - active

Looks like a resistor and dependent current source between


Drain/Source
ro = (λn ID )−1 (4)
gm = µn Cox (W /L)Vov
gm = 2ID /Vov (5)
p
gm = 2µn Cox (W /L)ID
9/26
Model: Active Region

′ ) term
For gm , ignore the small (1 + λn VDS
3 different (but equivalent) ways of finding gm .
Gives insight when designing for a value of gm .
For example, if a designer keeps Vov constant (which is a
common practice), then gm is proportional to ID
Active region is where the transistor is most commonly used in an
analog circuit
− Results in gain in the circuit

10/26
Model: Active Region
Alternative model
D
D

is
G ro
G
is rs
VGS
rs = 1/gm
S
S
NMOS - active small-signal T-model - active

− Equivalent to other active model


− Gate current zero since current source is forced to equal the current
through resistor rs
− This model useful when resistors are in the source lead to ground.
Makes some analysis easier.
11/26
PMOS Transistors

Small signal model


− The SAME models are used for PMOS as for NMOS
− There are NO SIGN CHANGES
(except that |λp | should be used to keep ro positive)

12/26
λ is a Function of Channel Length
λ is given for a transistor with a given channel length
However, λ is inversely proportional to channel length
Define new parameter, λ′ , where λ′ ≡ λL
− Units of λ′ are [m/V]

λ′
λ= (6)
L

L
ro = (7)
λ ′ ID

ro → ∞ as L increases
− A large ro makes the transistor more ideal in terms of output
impedance
− However, a longer channel length generally results in lower speed
and higher power dissipation
13/26
Example 1

Find the small signal gain vo /vi for the circuit shown below.

Vtn = 0.3V
VDD = 2V µn Cox = 240µA/V2
W = 4µm
L = 200nm
RD λ′n = 50nm/V
1kΩ
vi vo
VG M1
0.6V

14/26
Example 1
First we find the dc operating point...
Set the small-signal, vi = 0
− since nothing is changing while we
VDD find the dc operating point

RD Vov = VGS − Vtn = 0.3V


vi 2 = 216µA
ID = 0.5µn Cox (W /L)Vov
vo
VG M1
VD = VDD − ID RD = 1.784V
− VDS > Vov so M1 is in active region
Small signal parameters ...
gm = 2ID /Vov = 1.44mA/V
ro = L/(λ′n ID ) = 18.52kΩ

15/26
Example 1 - Small Signal Circuit

Small signal circuit


Independent sources have been set
to zero
RD vo = −gm vgs (RD ||ro )
vo vgs = vi

vi vgs gm vgs ro vo /vi = −gm (RD ||ro )


vo /vi = −1.366V/V
So a change in vi by 10mV would
result in a −13.66mV change in vo

16/26
Example 2
Find the small signal gain vo /vi , Rin , Rout for the circuit shown
below.
Vtn = 0.3V
VDD = 2V µn Cox = 240µA/V2
W = 10µm
L = 200nm
RS λ′n = 50nm/V

M1 C (large value)
vi 1kΩ Rin vo
Rout RL
500µA
1kΩ

VSS = −2V

Capacitor is a ”large value”


− an open circuit for dc bias analysis
− a short circuit for small signal analysis
(assumes vi is an ac signal, cap impedance can be ignored) 17/26
Example 2
First we find the dc operating point...
vi = 0 and ID = 500µA
2
ID = µn Cox (W /L)Vov
VDD
RS Vov = 0.2887V
M1 C VS = −0.5887V
vi vo
RL VDS > Vov so M1 is in active region
500µA

Small signal values ...


VSS
gm = 2ID /Vov = 3.464mA/V
rs = 1/gm = 288.7Ω
ro = L/(λ′n ID ) = 8kΩ

18/26
Example 2

Small signal circuit


All independent sources set to zero
RS
including current source
M1
vi Rin vo Also short capacitor C for small
Rout RL signal analysis
Now substitute the T-model for M1

19/26
Example 2
 
Rin
vg = Rin +RS vi
Rin → ∞ since gate current is zero
Small signal circuit
vg = vi
RS
vg is Resistor divider between vg and vo
ro  
Rin rs
vi
is vo = (R R||rL ||ro
o )+rs
vg
L
vo
rs = 1/gm Rout RL ||ro
RL vo /vi = = 0.7549V/V
(RL ||ro )+rs

To find Rout , set all independent


sources to zero
− set vi = 0 so vg = 0
Rout = rs ||ro = 278.6Ω

20/26
Example 3
Find the small signal gain vo /vi for the circuit shown below.
VDD = 2V
Vtp = −0.3V
I1 µp Cox = 120µA/V2
∞ W = 10µm
500µA
L = 200nm
R2 λ′p = 0m/V
1kΩ
RS ∞
M1 ∞
vi 1kΩ vo
Rin RG RD Rout RL
10kΩ 3kΩ 10kΩ

VSS = −2V

Caps have value of ∞ showing they are large values

21/26
Example 3

For dc analysis, we set vi = 0 and find ...


ID = 500µA
vov = 0.4082V
VS = 0.7082V
VD = −0.5V so VSD = 1.2082V
Since VSD > Vov , M1 in active region
gm = 2ID /Vov = 2.449mA/V
rs = 1/gm = 408.2Ω
ro = L/(|λ′p |ID ) → ∞ since λp = 0

22/26
Example 3

Small signal circuit

R2
RS
 
Rin
M1 vg = Rin +RS vi
vi Rin vo
RG RDRout RL

23/26
Example 3
Small signal circuit with T-model for M1

R2

RS is rs
vg

is
vi
Rin RG vo
Rout
RD RL

Since the gate current is zero, Rin = RG

24/26
Example 3
For Rout , set vi = 0 which results in is = 0 so ...
Rout = RD = 3kΩ
For vo /vi , first find vg /vi which is
vg /vi = RG /(RG + RS ) = 0.9091V/V
Now find, vo /vg ...
vo = −is (RD ||RL )
is = vg /(rs + RS )
vo /vg = −(RD ||RL )/(rs + RS ) = −1.639V/V
Combining with vg /vi ...
vo vo vg
= = −1.49V/V
vi vg vi

25/26
Topics Covered

What is small-signal analysis?


Small-signal models (cutoff/triode/active regions)
− Transconductance, gm
− Finite output impedance, ro
− Standard model and T-model
Small-signal analysis examples

26/26

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