Transistor

2SC2671(F)
Silicon NPN epitaxial planer type

For UHF band low-noise amplification

Unit: mm

5.0±0.2 4.0±0.2

■ Features

5.1±0.2
● Low noise figure NF.
● High gain.
● High transition frequency fT.

13.5±0.5
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit +0.2 +0.2
0.45 –0.1 0.45 –0.1
Collector to base voltage VCBO 15 V 1.27 1.27
Collector to emitter voltage VCER* 14 V

2.3±0.2
Emitter to base voltage VEBO 2 V
1 2 3
1:Base
Collector current IC 80 mA
2:Emitter
Collector power dissipation PC 600 mW 2.54±0.15
3:Collector
JEDEC:TO–92
Junction temperature Tj 150 ˚C EIAJ:SC–43A
Storage temperature Tstg –55 ~ +150 ˚C
*REB = 1kΩ

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA
Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA
Forward current transfer ratio hFE VCE = 8V, IC = 40mA 50 150 300
Transition frequency fT* VCE = 8V, IC = 40mA, f = 800MHz 3.5 5.5 GHz
Collector output capacitance Cob* VCB = 10V, IE = 0, f = 1MHz 0.8 1.5 pF
Foward transfer gain | S21e |2 VCE = 8V, IC = 40mA, f = 800MHz 9 12 dB
Maximum unilateral power gain GUM* VCE = 8V, IC = 40mA, f = 800MHz 10 13 15 dB
Noise figure NF* VCE = 8V, IC = 40mA, f = 800MHz 2.0 3.2 dB
VCE = 8V, IC = 40mA, f1 = 200MHz
Second inter modulation distortion IM2* 50 60 dB
f2 = 500MHz, VO = 100dBµ/75Ω
VCE = 8V, IC = 40mA, f1 = 600MHz
Third inter modulation distortion IM3* 75 86 dB
f2 = 500MHz, VO = 100dBµ/75Ω
*LTPD = 10%

1
Transistor 2SC2671(F)

PC — Ta IC — VCE IC — VBE
1.0 60 120
IB=400µA Ta=25˚C VCE=8V
Collector power dissipation PC (W)

350µA
50 100
0.8

Collector current IC (mA)

Collector current IC (mA)

300µA
25˚C
40 250µA 80
Ta=75˚C –25˚C
0.6
200µA
30 60
150µA
0.4
20 40
100µA

0.2
10 50µA 20

0 0 0
0 40 80 120 160 200 240 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — I E
100 600 12
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=8V VCB=8V

f=800MHz
Forward current transfer ratio hFE

30 Ta=25˚C

Transition frequency fT (MHz)

500 10

10

400 8
3
Ta=75˚C
1 300 6

0.3 25˚C
200 4
Ta=75˚C, 25˚C, –25˚C
0.1 –25˚C

100 2
0.03

0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob — VCB GUM — IC NF — IC

2.4 24 12
Maximum unilateral power gain GUM (dB)

IE=0 VCE=8V VCE=8V

Collector output capacitance Cob (pF)

f=1MHz f=800MHz (Rg=50Ω)

Ta=25˚C Ta=25˚C f=800MHz
2.0 20 10
Ta=25˚C
Noise figure NF (dB)

1.6 16 8

1.2 12 6

0.8 8 4

0.4 4 2

0 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA)

2
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