Metal 5 They have etsemely loue JeS IStividy
Cxtemey hith Conohuctívity.
-2 -3
Seionoduc-teys hye esisivit o
SemiCoructs :
Concuctvity intesedaje betuween
Metqls gnd insylyoos.
-6
Jnsulg ts They hav hijh esistivity o
lo ue Conohvetivity
I9
S= lo - Lo
Tyle of SeiCondyctes’
Jn tesn of State
O Elemets SemiConducteo_i SeMiCon dy cty Such as
Silicon and gesmanium, e qVeailable in the
hetyal Sate,
Cds, GaAs, Cdse: Inf,
dhd othey met| qbe used to oke these ScMj Conduct
Enesy band : EneTy tanl is q Collecion of two
Shegs levels Valente band qnd Conduction band
Yalehce bane Va lahe bac is qh ehesy banc thet
inculoles the Valence electons eh ry devel,
Condyctin bandl-reset qoe the Valence bahd
whee electOns qae Conduct to Psodyce Sield,
Enerty bana p :’The ehey bo gap s the minimyy
eheDt deuseol to Shíft electo n
faom the Valence bond to Conehyctíon
band (E),
bend
Conduction band
Conducon band Condyctioy
-Valente
Valehe bqnd bond
Valence bqnd
SUiConductor Conchctor (Metal)
R a-3.0 eV
73ev
# Fesmí ehety (af):> At abso late zeo
enoty fassess ed
ter fe tue,it is the a xímym fo ssible
by foee elehens in a a mgtesil (e Ok)
SermjConchucs ae claHfed tnto two gouPs
based
’
an the Roty
I is Ru Sericondu ctx
oth ho ig mifcaut do fant
SPe cies, heMy= h;
Mee den siies ofe
hy densitics of helc.
on(entbatio
0ntise Cmier
intisic
(i/ Cxtmnsic Semi tonducto8 :> etojnsic Semicon dect sefers
to a fyre SeMi Concyetey
oity qm
qn infurity.
tht has been olo fed
3
Seriondc-or
tyle of extosic
Thee qe two
(4-3KST
a) h-yle semioy du ctuy
log.
Noe
WoTe Both tye of SeiCodchcts h the S4me
electical Boferties.
doPin oidh Sí oo ne
(P-3R T 3169 )
OTivalet imfurty
TYalet mean the elemt whobe Valency is 3.
Boron(s), Alyminium (AL), halli(en indivr ( )
MaJority cier -- holes
Minority Caier- electon.
NeTE ís rainly
Jn e 4yPe Sei onchcy. Conetivtychasgd
to holes, whicy qe Posihvely
due to
(2)The Inrty ís called actelteg nat,
(h
Pesrtqvalet
Pentavalet mean the elemeut whose Valenty ís s
femtavalet element qe occurs in ga0uP-s
hame- Phosfhovus (P), croGemic(As), awtinony (sb)
and bisMuth (0í)
f (si)
" Masonty Chare Caiers: electon (Sa 1 )
crries iy holks (se es)
" Minoity Chage
Conductivity is many de
NoTE 0Jn N-tye sericonduectrs cíers.
to electons, hich is ncgative Chre
N-R
called donos Ímuiy
The imuity ís
eN JuncHion A P-N Sunctoy is a semi
qrYangment in which
onut tor
hyle qnd
Ptyle Semicondvttrs a in close
Conta ct.
-Metdle Contuct
MeBallic
Contect Depletion loyey
Qefleion egion : eto Concentatem toaohet
" hole ftuse fom p Side to %sicle
"electo n difuse fory h-sid to si
These e dnd holes coMbihe qnd fon a loye called
stegion.
De Pletion tayes y DePletion regfon,
" Mobile Ghorge Caríer ane hot Peseat in depletion e ion.
Qaeletlon e 0n cojdth ís in rider of lg edexs.
The Poteirlla) bqieo is the loteil ce thet ha
develofed, qcaoss the deplketion Jegioi,
d
Biasing:’ No biasing:if N 3 diode
(af anfsr att) bqtrry thon
leove mConnectd to the
mconnected to
i4 is Caled un biasing
NO
)Ford biasi wheM Rside is onnectedd to
Posiie tesmingl qhd N-sile
hegjve
is Conne cted to
tesninal of batHey,
flointesm .
’ In his Cument CePosiive (e
h- neg4tive
roll
Reyerse bíos
5- Positve ( e ) 3 )
A and dye to inosty Cari
Cusent i 9untt of
Fogoard bíqs
L(HA)
STevexse bias
rode as RectHics :> A Jectiey ís a device tht
t and Voltqge into crect
Cuoe
Converts altemtire
Cnmeat and voltage.
TPe
)nlf oure Sectífiex > Piode Conchet
Dng Posie hlf Cy cle
Dio denot conduet
dide
Lod
Load
0, s on duet/closcd
Duriny Positia talf ycle
do ho+ tonhct/of.
Qursg regaive half ycle :> 0,&
mot Conedet/
do- opey
0, 8
Optoelectohics devices -
OPtoelect¡nfcs devîces gae
Semieondety diode in thich the
Phota,Photnac
nee by
Ca xle's q
Erithi Diode (1en) Anode cathode
flows ough te
Shits Iigut who cyret
eJectoy nd hoes reombjne, releqsing enrg>
p dand osange
ALhata
InheN bhe, treen and white
hals ed and intael
" A ha As td and Jntqsed
oith no sN p time.
AdVartge :-Quick action
2 Nearly Monoch OMatíc.
9Fast QN-OFF Sjtchiny Capqbilit.
(2) Photocliode : oork in veverse bias,
T4 ComVest ligt enesgy into electric
, cahode ensty.
Tt is abo ysed to Photo-oletecto
G Photo Vo lie cell Clso KnDLOy as Solar Cell
iv Fogund bias.
H oavest Sumligkt doecty
ito electicity.