ELECTRONICS DEVICES AND CIRCUITS
Course Code: CECE40202 Credit Units: 03
Course Objective:
1. To give the students a solid background of solid-state devices.
2. To apply the inculcated knowledge for developing simple electronic circuits.
3. To use BJT and MOSFET in different configurations and study their parameters under various biasing schemes
4. To simulate the circuits using EDA tools and verify their theoretical output with hard-wired circuitry results
Course Outcome:
1. Understand the semiconductor physics of the intrinsic and extrinsic materials
2. Comprehend the characteristics of the various P-N junction diode and special diodes.
3. Able to analyze the diode with different DC and AC models.
4. Construct electronic circuits using the PN junction diode for various applications.
5. Comprehend the impact of terminal voltages over the current using the BJT and MOSFET devices characteristics.
6. Design and analysis of BJT and MOSFET in different configurations and study their parameters with various biasing
schemes for suitable applications.
7. Analyze the current–voltage characteristics of various semiconductor devices and their digital logic implementations.
Course Contents:
Module I: BASICS
Crystal structure, Fermi level, Energy-band diagram, Intrinsic and extrinsic semiconductor, Carrier
concentration, Scattering and drift of electrons and holes, Drift current, Diffusion mechanism, Generation,
Recombination and Injection of carriers, Transient response, and Basic governing equations in semiconductor.
Module II:
DIODES: Physical description of p-n junction, Transport equations, Current-Voltage characteristics,
Temperature dependence, Tunneling current, Small signal ac analysis, Diode equation, Diode resistance, Diode
capacitance: Transition and diffusion capacitance, Ideal diode, DC Analysis – Small Signals and Large signal
models of PN junction diode and AC equivalent circuit. Zener diode: Break down mechanism, Characteristics,
Specifications. Poisson and continuity equations.
APPLICATIONS: Rectifier circuits, Clipper and Clamper circuits, Voltage regulator, Light Emitting Diode
(LED), Laser diode, Avalanche diode, Schottky diode, Photo diode, Tunnel diode, Varactor diode, Gunn diode,
PIN diode, and Vacuum diode.
Module III:
BIPOLAR JUNCTION TRANSISTORS (BJT): Construction, Types: NPN and PNP, Current components,
Transistor characteristics, Transistor circuit configuration: Common Base (CB), Common Emitter (CE), and
Common Collector (CC) Configuration, Early Effect, Ebers-Moll Model, Maximum Voltage Ratings.
APPLICATIONS: Amplifier (Class A, B, AB, and C) and Switch.
Module IV:
Field Effect Transistor (FET): Introduction, Construction, Operation, V-I Characteristics, Transfer
Characteristics, Drain Characteristics, Small-Signal Model.
Metal Oxide Semiconductor Field Effect Transistor (MOSFET): Introduction, Construction, Operation and
characteristics, Depletion MOSFET, Enhancement MOSFET. Configurations: Common Source, Common Gate,
and Common Drain. NMOS, PMOS, CMOS, and MOS Capacitor.
APPLICATION: Inverter and Source follower.
Module V: TRANSISTOR BIASING AND THERMAL STABILIZATION
Concept of operating point, Thermal runway, Bias stability, Stability factor, Fixed bias, Collector – to – base
bias, Voltage divider bias, Bias compensation.
APPLICATION: Thermistor and Sensistor.
Examination Scheme:
Components A CT S/V/Q HA EE
Weightage (%) 5 10 8 7 70
CT: Class Test, HA: Home Assignment, S/V/Q: Seminar/Viva/Quiz, EE: End Semester Examination; Att:
Attendance
Text & References:
Text:
Integrated Electronics: Analog & Digital Circuit Systems – Jacob Millman & Halkias, TMH. Electronic Devices
& Circuits – Allen Mottershead, PHI.
References:
Semiconductor Devices and Circuits, Alok K. Dutta, Oxford University Press.
Electronic Devices and Circuit Theory – Boylestad & Nashelsky, 8th Ed. PHI.
Electronic Devices & Circuit Analysis – K. Lal Kishore, BS Publications